SM8S15CA-Q1

SM8S10(C)A-Q 1 THRU SM8S4 3(C)A-Q 1 Surface Mount Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Chip produced by chemical method • Junction passivated by high temperature resistant insulating adhesive • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in Bi-directional polarity only • Low leakage current DO-218AB • Low forward voltage drop • High surge capability • Meets ISO16750-2 surge specification (varied by test condition) LF maximum peak of 245 °C • AEC-Q101 qualified PRIMARY CHARACTERISTICS VBR 11.1 V to 52.8 V VWM 10 V to 43 V PPPM (10 x 1000 μs) 6600 W PPPM (10 x 10 000 μs) 5200 W TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. PD 8W TJ max. 175 °C Polarity Unfi-dfirectfional/Bi-directional Package DO-218AB MECHANICAL DATA Case: DO-218AB Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated J-STD-002 and JESD 22-B102 leads, solderable Polarity: heatsink is anode MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation SYMBOL with 10/1000 μs waveform with 10/10 000 μs waveform Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) Peak pulse current with 10/1000 μs waveform Operating junction and storage temperature range VALUE UNIT 6600 PPPM W 5200 PD 8.0 W IPPM (1) See next table A TJ, TSTG -55 to +175 °C Note (1) Non-repetitive current pulse derated above T = 25 °C A http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 1 Document ID Issued Date AS-1080018 2018/03/08 Revised Date 2023/05/12 Revision Page. C 3 per SM8S10(C)A-Q 1 THRU SM8S4 3(C)A-Q 1 Surface Mount Transient Voltage Suppressors ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) BREAKDOWN VOLTAGE VBR (V) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM REVERSE LEAKAGE AT VWM TJ = 175 °C ID (μA) MAX. PEAK PULSE CURRENT AT 10/1000 μs WAVEFORM (A) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) TYPICAL TEMP. COEFFICIENT OF VBR (1) T (%/°C) MIN. NOM. MAX. TEST CURRENT IT (mA) SM8S10(C)A-Q1 11.1 11.7 12.3 5.0 10.0 10 150 388 17.0 0.069 SM8S11(C)A-Q1 12.2 12.9 13.5 5.0 11.0 10 150 363 18.2 0.072 SM8S12(C)A-Q1 13.3 14.0 14.7 5.0 12.0 10 150 332 19.9 0.074 SM8S13(C)A-Q1 14.4 15.2 15.9 5.0 13.0 10 150 307 21.5 0.076 SM8S14(C)A-Q1 15.6 16.4 17.2 5.0 14.0 10 150 284 23.2 0.078 SM8S15(C)A-Q1 16.7 17.6 18.5 5.0 15.0 10 150 270 24.4 0.080 SM8S16(C)A-Q1 17.8 18.8 19.7 5.0 16.0 10 150 254 26.0 0.081 SM8S17(C)A-Q1 18.9 19.9 20.9 5.0 17.0 10 150 239 27.6 0.082 DEVICE TYPE SM8S18(C)A-Q1 20.0 21.1 22.1 5.0 18.0 10 150 226 29.2 0.083 SM8S20(C)A-Q1 22.2 23.4 24.5 5.0 20.0 10 150 204 32.4 0.085 SM8S22(C)A-Q1 24.4 25.7 26.9 5.0 22.0 10 150 186 35.5 0.086 SM8S24(C)A-Q1 26.7 28.1 29.5 5.0 24.0 10 150 170 38.9 0.087 SM8S26(C)A-Q1 28.9 30.4 31.9 5.0 26.0 10 150 157 42.1 0.088 SM8S28(C)A-Q1 31.1 32.8 34.4 5.0 28.0 10 150 145 45.4 0.089 SM8S30(C)A-Q1 33.3 35.1 36.8 5.0 30.0 10 150 136 48.4 0.090 SM8S33(C)A-Q1 36.7 38.7 40.6 5.0 33.0 10 150 124 53.3 0.091 SM8S36(C)A-Q1 40.0 42.1 44.2 5.0 36.0 10 150 114 58.1 0.091 SM8S40(C)A-Q1 44.4 46.8 49.1 5.0 40.0 10 150 102 64.5 0.092 SM8S43(C)A-Q1 47.8 50.3 52.8 5.0 43.0 10 150 95.1 69.4 0.093 Notes (1) To calculate V BR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + T x (TJ - 25)) ORDERING INFORMATION (Example) PREFERRED P/N SM8SXX(C)A-Q1 UNIT WEIGHT (g) 2.85 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 PACKAGE DO-218AB Page 2 BASE QUANTITY NA DELIVERY MODE According to customer's requirement Document ID Issued Date AS-1080018 2018/03/08 Revised Date 2023/05/12 Revision Page. C 3 SM8S10(C)A-Q 1 THRU SM8S4 3(C)A-Q 1 Surface Mount Transient Voltage Suppressors RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 6000 8.0 Load Dump Power (W) Power Dissipation (W) 5000 6.0 4.0 2.0 4000 3000 2000 1000 0 0 50 Input Peak Pulse Current (%) 150 150 100 25 200 50 75 100 125 150 175 Case Temperature (°C) Case Temperature (°C) Fig. 1 - Power Derating Curve Fig. 2 - Load Dump Power Characteristics (10 ms Exponential Waveform) tr = 10 μs 10 000 TJ = 25 °C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50 % of IPPM Peak Value IPPM Reverse Surge Power (W) 0 100 Half Value - IPP IPPM 2 50 td 0 1000 0 10 20 30 40 100 10 t - Time (ms) Pulse Width (ms) - ½ IPP Exponential Waveform Fig. 3 - Pulse Waveform Fig. 4 - Reverse Power Capability PACKAGE OUTLINE DIMENSIONS (millimeters) DO-218AB Mounting Pad Layout http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 3 Document ID Issued Date AS-1080018 2018/03/08 Revised Date 2023/05/12 Revision Page. C 3