US1A-A THRU US1M-A
Effciency Rectifiers-50-1000V
1.0A Surface Mount Hi gh
Package outline
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Ultra fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
Glass passivated chip junction
Compliant to RoHS Directive 2011/65/EU
SMA/DO-214AC
0.108(2.75)
0.096(2.45)
0.067 (1.70)
0.051 (1.30)
0.177(4.50)
0.157(3.99)
0.012(0.305)
0.006(0.152)
Compliant to Halogen - free
0.096(2.42)
0.078(1.98)
Mechanical data
0.060(1.52)
0.030(0.76)
Case: JEDEC DO-214AC molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
0.008(0.203)MAX.
0.208(5.28)
0.188(4.80)
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics (AT
T A=25 oC unless otherwise noted)
MAX.
UNIT
Forward rectified current
See Fig.2
IO
1.0
A
Forward surge current
8.3ms single half sine-wave (JEDEC methode)
I FSM
30
A
PARAMETER
CONDITIONS
V R = V RRM T A = 25 OC
Reverse current
Symbol
MIN.
TYP.
5.0
IR
O
V R = V RRM T A = 100 C
Thermal resistance
Junction to ambient
NOTE 1
R θJA
50
Diode junction capacitance
f=1MHz and applied 4V DC reverse voltage
CJ
15
Storage temperature
T STG
*1
V RRM
(V)
V RMS*2
(V)
*3
VR
(V)
US1A-A
50
35
50
US1B-A
100
70
100
SYMBOLS
US1D-A
200
140
200
US1G-A
400
280
400
US1J-A
600
420
600
US1K-A
800
560
800
US1M-A
1000
700
1000
*4
VF
(V)
*5
t rr
(ns)
Operating
temperature
T J, ( OC)
μA
50
O
pF
O
+150
-65
C/W
C
*1 Repetitive peak reverse voltage
*2 RMS voltage
1.00
50
*3 Continuous reverse voltage
1.40
-55 to +150
*4 Maximum forward voltage@I F=1.0A
1.70
75
*5 Maximum Reverse recovery time, note 2
Note: 1.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
2. Reverse recovery time test condition, I F =0.5A, I R =1.0A, I RR =0.25A
http://www.anbonsemi.com
TEL:+86-755-23776891
FAX:+86-755-81482182
Page 1
Document ID
Issued Date
Revised Date
AS-3030004
2003/03/08
2022/05/16
Revision
E
Page.
3
US1A-A THRU US1M-A
Effciency Rectifiers-50-1000V
1.0A Surface Mount Hi gh
Rating and characteristic curves
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
0.8
0.6
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
0.4
0.2
0
0
25
50
30
£PEAK FORWARD SURGE CURRENT,
AMPERES
1.0
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
75
100
125
150
25
20
15
10
175
5.0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
1
10
LEAD TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
1,000
10
TJ=25 C
PULSE WIDTH=300 ms
1%DUTY CYCLE
1
0.1
US1A-A-US1D-A
US1G-A
US1J-A-US1M-A
0.01
0.2
0.6
1.0
1.4
1.8
2.0
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD
CURRENT,AMPERES
20
100
TJ=100 C
10
1
TJ=25 C
0.1
0.01
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
20
40
60
80
100
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE,
C/W
FIG. 5-TYPICAL JUNCTION CAPACITANCE
TJ=25 C
100
0
PERCENT OF PEAK REVERSE VOLTAGE,%
200
JUNCTION CAPACITANCE, pF
100
10
100
10
1
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
http://www.anbonsemi.com
TEL:+86-755-23776891
FAX:+86-755-81482182
t,PULSE DURATION,sec.
Page 2
Document ID
Issued Date
Revised Date
AS-3030004
2003/03/08
2022/05/16
Revision
E
Page.
3
US1A-A THRU US1M-A
Effciency Rectifiers-50-1000V
1.0A Surface Mount Hi gh
Pinning information
Pin
Pin1
Pin2
Simplified outline
cathode
anode
1
Symbol
2
1
2
Marking
Type number
Marking code
US1A-A
US1B-A
US1D-A
US1G-A
US1J-A
US1K-A
US1M-A
US1A
US1B
US1D
US1G
US1J
US1K
US1M
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
A
B
C
SMA
0.110 (2.80)
0.063 (1.60)
0.087 (2.20)
http://www.anbonsemi.com
TEL:+86-755-23776891
FAX:+86-755-81482182
Page 3
Document ID
Issued Date
Revised Date
AS-3030004
2003/03/08
2022/05/16
Revision
E
Page.
3
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