75.C93E4.G010C

RoHS Compliant 8GB DDR3 SO-DIMM Industrial Product Specifications March 13, 2014 Version 1.1 Apacer Technology Inc. 1F., No.32, Zhongcheng Rd., Tucheng Dist., New Taipei City 236, Taiwan Tel: +886-2-2267-8000 www.apacer.com Fax: +886-2-2267-2261 Table of Contents General Description .......................................................................................................2 Ordering Information .....................................................................................................2 Key Parameters ..............................................................................................................2 Specifications:................................................................................................................3 Features:.........................................................................................................................4 Pin Assignments.............................................................................................................5 Pin Descriptions .............................................................................................................7 Functional Block Diagram.............................................................................................8 Absolute Maximum Ratings ..........................................................................................9 DRAM Component Operating Temperature Range.....................................................10 Operating Conditions ...................................................................................................11 IDD Specifications.......................................................................................................12 Mechanical Drawing....................................................................................................12 ©Apacer Technology Inc. 1 General Description Apacer 75.C93E4.G010C is a 1024M x 64 DDR3 SDRAM (Synchronous DRAM) SO-DIMM. This high-density memory module consists of 16 pieces 512M x 8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages and a 2K EEPROM. The module is a 204-pins small-outlined, dual in-line memory module and is intended for mounting into a connector socket. Decoupling capacitors are mounted on the printed circuit board for each DDR3 SDRAM. The following provides general specifications of this module. Ordering Information Part Number Bandwidth Speed Grade Max Frequency CAS Latency 75.C93E4.G010C 12.8 GB/sec 1600 Mbps 800 MHz CL11 Density Organization Component Rank 8GB 1024M x 64 512M x8*16 2 Key Parameters MT/s DDR3-1066 DDR3-1333 DDR3-1600 Unit Grade -CL7 -CL9 -CL11 tCK (min) 1.875 1.5 1.25 ns CAS latency 7 9 11 tCK tRCD (min) 13.125 13.5 13.75 ns tRP (min) 13.125 13.5 13.75 ns tRAS (min) 37.5 36 35 ns tRC (min) 50.625 49.5 48.75 ns CL-tRCD-tRP 7-7-7 9-9-9 11-11-11 tCK ©Apacer Technology Inc. 2 Specifications: ♦ On-DIMM thermal sensor : No ♦ Organization: 1024 words x 64 bits, 2 ranks ♦ Integrating 16 pieces of 4G bits DDR3 SDRAM sealed in FBGA ♦ Package: 204-pin socket type small outline dual in-line memory module (SO-DIMM) ♦ PCB: height 30.0mm, lead pitch 0.6 mm (pin), lead-free (RoHS compliant) ♦ Power supply VDD: 1.5V ± 0.075V ♦ Serial Presence Detect (SPD) ♦ Eight Internal banks for concurrent operation (components) ♦ Interface: SSTL_15 ♦ Burst lengths (BL): 8 and 4 with Burst Chop (BC) ♦ CAS Latency (CL): 6, 7, 8, 9, 10, 11 ♦ CAS Write Latency (CWL): 5, 6, 7, 8 ♦ Supports auto pre-charge option for each burst access ♦ Supports auto-refresh/self-refresh ♦ Refresh cycles: 7.8 ㎲ at 0℃≤ TC ≤ +85℃ ♦ Operating case temperature range: Industrial (-40 °C ≤ TC ≤ +95°C) ♦ PCB: 30µ gold finger ©Apacer Technology Inc. 3 Features: ♦ Double-date-rate architecture: 2 data transfers per clock cycle ♦ The high-speed data transfer is realized by the 8-bits prefetch pipelined architecture. ♦ Bi-directional differential data strobe (DQS and /DQS) is transmitted / received with data for capturing data at the receiver ♦ DQS: edge-aligned with data for read; center-aligned with data for write ♦ Differential clock inputs (CK and /CK) ♦ DLL aligns DQ and DQS transitions with CK transitions ♦ Data mask (DM) for writing data ♦ Posted CAS by programmable additive latency for enhanced command and data bus efficiency ♦ On-Die-Termination (ODT) for improved signal quality: Synchronous ODT/Dynamic ODT/Asynchronous ODT ♦ Multi-Purpose Register (MPR) for temperature read out ♦ ZQ calibration for DQ drive and ODT ♦ Programmable Partial Array Self-Refresh (PASR) ♦ /Reset pin for power-up sequence and reset function ♦ SRT range: normal/extended, auto/manual self-refresh ♦ Programmable output driver impedance control ©Apacer Technology Inc. 4 Pin Assignments Pin No. Pin name Pin No. Pin name Pin No. Pin name Pin No. Pin name 1 VREFDQ 53 DQ19 105 VDD 157 DQ42 3 VSS 55 VSS 107 A10(AP) 159 DQ43 5 DQ0 57 DQ24 109 BA0 161 VSS 7 DQ1 59 DQ25 111 VDD 163 DQ48 9 VSS 61 VSS 113 /WE 165 DQ49 11 DM0 63 DM3 115 /CAS 167 VSS 13 VSS 65 VSS 117 VDD 169 /DQS6 15 DQ2 67 DQ26 119 A13 171 DQS6 17 DQ3 69 DQ27 121 /CS1 173 VSS 19 VSS 71 VSS 123 VDD 175 DQ50 21 DQ8 73 CKE0 125 NC 177 DQ51 23 DQ9 75 VDD 127 VSS 179 VSS 25 VSS 77 NC 129 DQ32 181 DQ56 27 /DQS1 79 BA2 131 DQ33 183 DQ57 29 DQS1 81 VDD 133 VSS 185 VSS 31 VSS 83 A12(BC) 135 /DQS4 187 DM7 33 DQ10 85 A9 137 DQS4 189 VSS 35 DQ11 87 VDD 139 VSS 191 DQ58 37 VSS 89 A8 141 DQ34 193 DQ59 39 DQ16 91 A5 143 DQ35 195 VSS 41 DQ17 93 VDD 145 VSS 197 SA0 43 VSS 95 A3 147 DQ40 199 VDDSPD 45 /DQS2 97 A1 149 DQ41 201 SA1 47 DQS2 99 VDD 151 VSS 203 VTT 49 VSS 101 CK0 153 DM5 51 DQ18 103 /CK0 155 VSS ©Apacer Technology Inc. 5 Pin No. Pin name Pin No. Pin name Pin No. Pin name Pin No. Pin name 2 VSS 54 VSS 106 VDD 158 DQ46 4 DQ4 56 DQ28 108 BA1 160 DQ47 6 DQ5 58 DQ29 110 /RAS 162 VSS 8 VSS 60 VSS 112 VDD 164 DQ52 10 /DQS0 62 /DQS3 114 /CS0 166 DQ53 12 DQS0 64 DQS3 116 ODT0 168 VSS 14 VSS 66 VSS 118 VDD 170 DM6 16 DQ6 68 DQ30 120 ODT1 172 VSS 18 DQ7 70 DQ31 122 NC 174 DQ54 20 VSS 72 VSS 124 VDD 176 DQ55 22 DQ12 74 CKE1 126 VREFCA 178 VSS 24 DQ13 76 VDD 128 VSS 180 DQ60 26 VSS 78 A15(NC) 130 DQ36 182 DQ61 28 DM1 80 A14(NC) 132 DQ37 184 VSS 30 /RESET 82 VDD 134 VSS 186 /DQS7 32 VSS 84 A11 136 DM4 188 DQS7 34 DQ14 86 A7 138 VSS 190 VSS 36 DQ15 88 VDD 140 DQ38 192 DQ62 38 VSS 90 A6 142 DQ39 194 DQ63 40 DQ20 92 A4 144 VSS 196 VSS 42 DQ21 94 VDD 146 DQ44 198 /EVENT 44 VSS 96 A2 148 DQ45 200 SDA 46 DM2 98 A0 150 VSS 202 SCL 48 VSS 100 VDD 152 /DQS5 204 VTT 50 DQ22 102 CK1 154 DQS5 52 DQ23 104 /CK1 156 VSS ©Apacer Technology Inc. 6 Pin Descriptions Pin Name Description Ax* SDRAM address bus BAx SDRAM bank select DQx DIMM memory data bus /RAS SDRAM row address strobe /CAS SDRAM column address strobe /WE SDRAM write enable /CSx SDRAM Chip select lines CKEx SDRAM clock enable lines CKx SDRAM clock input /CKx SDRAM Differential clock input DQSx SDRAM data strobes(positive line of differential pair) /DQSx SDRAM data strobes(negative line of differential pair) DMx SDRAM input mask SCL Clock input for serial PD SDA Data input/output for serial PD SAx Serial address input VDD Power for internal circuit VDDSPD Serial EEPROM positive power supply VREFDQ SDRAM I/O reference supply VREFCA SDRAM command/address reference supply VSS Power supply return(ground) VTT SDRAM I/O termination supply /RESET ODTx NC /EVENT *IC Component Composition: ©Apacer Technology Inc. Set DRAM to known state On-die termination control lines Spare pins(no connect) An output of the thermal sensor to indicate critical module temperature 128Mx8 256Mx8 512Mx8 1024Mx8 A0~A13 A0~A14 A0~A15 A0~A15 7 Functional Block Diagram /RESET VTT VDDSPD VREFCA VREFDQ VDD VSS             Rs1     Rs3 Rs3 Rs4 Rs4    
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   /RESET:SDRAMs (D0 to D15) Serial PD SPD SDRAMs (D0 to D15) SDRAMs (D0 to D15) SDRAMs (D0 to D15) D1 SDRAMs (D0 to D15), SPD D2 Notes : 1. DQ wiring may be changed within a byte. 2. DQ, DQS, /DQS, ODT, DM, CKE, /CS relationships must be maintained as shown. * D0 to D15: 4G bits DDR3 SDRAM Address, BA: A0 to A15, BA0 to BA2 Command: /RAS, /CAS, /WE U1: 256 bytes EEPROM Rs1: 159 Rs2: 369 Rs3: 309 Rs4: 2409 ©Apacer Technology Inc. V2 D8 V1V9 D7 V8 V3 D14 V7 V4 V5 D3 D12 V6 D13 SCL SCL SA0 A0 SA1 A1 A2 SDA U1 /EVENT /EVENT D10 V4 D4 V6 VTT V3 D9 V5 D11 V2 D0 V1 V9 D5 V7 D15 V8 D6 Address and Control lines 8 SDA Absolute Maximum Ratings Parameter Symbol Description Units Voltage on VDD pin relative to Vss VDD - 0.4 V ~ 1.975 V V Voltage on VDDQ pin relative to Vss VDDQ - 0.4 V ~ 1.975 V V Voltage on any pin relative to Vss VIN, VOUT - 0.4 V ~ 1.975 V V Storage Temperature TSTG -55 to +100 ℃ Notes: 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard. 3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must not be greater than 0.6 x VDDQ, when VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV. . ©Apacer Technology Inc. 9 DRAM Component Operating Temperature Range Symbol TOPER Parameter Operating Temperature Range Rating Units Notes -40 to 95 ℃ 1,2 Notes: 1. Operating Temperature TOPER is the case surface temperature on the center/top side of the DRAM. For measurement conditions, please refer to the JEDEC document JESD51-2. 2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be maintained between -40°C~95°C under all operating conditions. Industrial Temperature: The industrial temperature device requires that the case temperature not exceed –40°C or +95°C. JEDEC specifications require the refresh rate to double when TC exceeds+85°C; this also requires use of the high-temperature self refresh option. ♦ MAX operating case temperature. TC is measured in the center of the package. ♦ A thermal solution must be designed to ensure the DRAM device does not exceed the maximum TC during operation. ♦ Device functionality is not guaranteed if the DRAM device exceeds the maximum TC during operation. ♦ If TC exceeds +85°C, the DRAM must be refreshed externally at 2X refresh, which is a 3.9µs interval refresh rate. ©Apacer Technology Inc. 10 Operating Conditions Recommended DC Operating Conditions - DDR3 (1.5V) operation Symbol VDD Rating Parameter Supply Voltage VDDQ Supply Voltage for Output Typ. Max. 1.425 1.5 1.575 V 1.425 1.5 1.575 V Notes: 1. Under all conditions VDDQ must be less than or equal to VDD.. 2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together. ©Apacer Technology Inc. 11 Units Min. IDD Specifications Conditions Operating one bank active-precharge current: Symbol MICRON Unit IDD0 584 mA IDD1 672 mA IDD2P-0 288 mA IDD2P-1 512 mA IDD2N 512 mA IDD2Q 512 mA IDD3P 608 mA IDD3N 608 mA tCK = tCK (IDD); tRC = tRC (IDD); tRAS = tRAS MIN (IDD); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING Operating one bank active-read-precharge current: IOUT = 0 mA; BL = 8; CL = CL (IDD);, AL = 0;, tCK = tCK (IDD); tRC = tRC (IDD); tRAS = tRAS MIN (IDD); tRCD = tRCD (IDD); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W Precharge power-down current: All device banks idle; tCK = tCK (IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Precharge standby current; All device banks idle: tCK = tCK (IDD); CKE is HIGH; CS# is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING Precharge quiet standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH; CS# is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Active power-down current: All device banks open; tCK = tCK (IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Active standby current: All device banks open; tCK = tCK (IDD); tRP = tRP (IDD); tRAS = tRAS MAX (IDD); CKE is HIGH, CS# is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING ©Apacer Technology Inc. 12 Operating burst read current: IDD4R 1400 mA IDD4W 1144 mA IDD5B 2024 mA IDD6 320 mA IDD6ET 400 mA IDD7 1904 mA IDD8 320 mA All device banks open; Continuous burst reads; IOUT = 0 mA; BL = 8; CL = CL (IDD); AL = 0; tCK = tCK (IDD); tRAS = tRAS MAX (IDD); tRP = tRP (IDD); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data patter is same as IDD4W Operating burst write current: All device banks open; Continuous burst writes; BL = 8; CL = CL(IDD);AL = 0; tCK= tCK(IDD); tRAS= tRAS MAX(IDD); tRP= tRP(IDD); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING. Burst refresh current: tCK=tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH; CS# is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING. Self refresh current: CK and CK# at 0V; CKE < 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING. Self refresh temperature current (SRT-enabled): MAX TC = 95°C Operating bank interleave read current All bank interleaving reads; IOUT = 0mA; BL = 8; CL = CL(IDD); AL = tRCD(IDD) - 1*tCK(IDD); tCK= tCK(IDD); tRC= tRC(IDD); tRRD = tRRD(IDD); tRCD = 1*tCK(IDD) ; CKE is HIGH; CS# is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R. Reset current Notes: *Value calculated as one module rank in this operating condition, and all other module ranks in IDD2P (CKE LOW) mode. **Value calculated reflects all module ranks in this operating condition. ©Apacer Technology Inc. 13 Mechanical Drawing Unit: mm Front side 21.15 2.00 Min 9.00 3.80 Max (DATUM -A-) 4x Full R B 21.00 2.15 39.00 A 203 1 6.00 4.00 Min Component area (Front) 2.45 67.60 1.00 ± 0.10 D Back side 63.60 2.45 2.15 30.00 Component area (Back) 20.00 4.00 204 2 C (DATUM -A-) Detail A Detail B 0.45 ± 0.03 Detail C FULL R 1.65 3.00 4.00 ± 0.10 0.35 Max 2.55 Min 0.60 1.00 ± 0.10 30µ gold finger Detail D Contact pad 0.2 Max 0.35 Max 3.00 1.35 (All dimensions are in millimeters with ±0.15mm tolerance unless specified otherwise.) ©Apacer Technology Inc. 14 Revision History Revision Date Description 0.9 08/28/2012 Official release 1.0 08/29/2012 release 1.1 07/23/2013 Changed headquarters address ©Apacer Technology Inc. Remark 15 Global Presence Taiwan (Headquarters) Apacer Technology Inc. 1F., No.32, Zhongcheng Rd., Tucheng Dist., New Taipei City 236, Taiwan R.O.C. Tel: +886-2-2267-8000 Fax: +886-2-2267-2261 amtsales@apacer.com U.S.A. Apacer Memory America, Inc. 386 Fairview Way, Suite102, Milpitas, CA 95035 Tel: 1-408-518-8699 Fax: 1-408-935-9611 sa@apacerus.com Japan Apacer Technology Corp. 5F, Matsura Bldg., Shiba, Minato-Ku Tokyo, 105-0014, Japan Tel: 81-3-5419-2668 Fax: 81-3-5419-0018 jpservices@apacer.com Europe Apacer Technology B.V. Science Park Eindhoven 5051 5692 EB Son, The Netherlands Tel: 31-40-267-0000 Fax: 31-40-267-0000#6199 sales@apacer.nl China Apacer Electronic (Shanghai) Co., Ltd 1301, No.251,Xiaomuqiao Road, Shanghai, 200032, China Tel: 86-21-5529-0222 Fax: 86-21-5206-6939 sales@apacer.com.cn India Apacer Technologies Pvt Ltd, # 535, 1st Floor, 8th cross, JP Nagar 3rd Phase, Bangalore – 560078, India Tel: 91-80-4152-9061 sales_india@apacer.com ©Apacer Technology Inc. 16