0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
78.B1GDJ.AF1

78.B1GDJ.AF1

  • 厂商:

    APACERMEMORYAMERICA(宇瞻科技)

  • 封装:

    240-UDIMM

  • 描述:

    4GB DDR3 1066 U-DIMM 256X8 2 RAN

  • 数据手册
  • 价格&库存
78.B1GDJ.AF1 数据手册
Apacer Memory Product Specification 4GB Unbuffered DDR3 SDRAM DIMM with SPD Ordering Information Part Number 78.B1GDJ.AF1 Bandwidth Speed Grade Max Frequency 8.5GB/sec 1066Mbps 533MHz CAS Latency CL7 Density Organization 4GB 512Mx64 Component Composition 256Mx8*16EA Number of Rank 2 Specifications Features • On Dimm Thermal Sensor: No • Density: 4GB • Organization  512M words × 64 bits, 2 ranks • Mounting 16 pieces of 2G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory module (DIMM)  PCB height: 30.0mm  Lead pitch: 1.0mm (pin)  Lead-free (RoHS compliant) • Power supply: VDD = 1.5V ± 0.075V • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs • Differential clock inputs (CK and /CK) • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Data mask (DM) for write data • Posted /CAS by programmable additive latency for better command and data bus efficiency • On-Die-Termination (ODT) for better signal quality  Synchronous ODT  Dynamic ODT  Asynchronous ODT • Multi Purpose Register (MPR) for temperature read out • ZQ calibration for DQ drive and ODT • Programmable Partial Array Self-Refresh (PASR) • /RESET pin for Power-up sequence and reset function • SRT range:  Normal/extended  Auto/manual self-refresh • Programmable Output driver impedance control • Eight internal banks for concurrent operation (components) • Interface: SSTL_15 • Burst lengths (BL): 8 and 4 with Burst Chop (BC) • /CAS Latency (CL): 6, 7, 8, 9 • /CAS write latency (CWL): 5, 6, 7 • Precharge: auto precharge option for each burst access • Refresh: auto-refresh, self-refresh • Refresh cycles  Average refresh period 7.8µs at 0°C ≤ TC ≤ +85°C 3.9µs at +85°C < TC ≤ +95°C • Operating case temperature range  TC = 0°C to +95°C Apacer Memory Product Specification Pin Configurations Front side 1 pin 121 pin 48 pin 49 pin 120 pin 168 pin 169 pin 240 pin Back side Pin No. Pin name Pin No. Pin name Pin No. Pin name Pin No. Pin name 1 VREFDQ 61 A2 121 VSS 181 A1 2 VSS 62 VDD 122 DQ4 182 VDD 3 DQ0 63 CK1 123 DQ5 183 VDD 4 DQ1 64 /CK1 124 VSS 184 CK0 5 VSS 65 VDD 125 DM0 185 /CK0 6 /DQS0 66 VDD 126 NC 186 VDD 7 DQS0 67 VREFCA 127 VSS 187 NC 8 VSS 68 NC 128 DQ6 188 A0 9 DQ2 69 VDD 129 DQ7 189 VDD 10 DQ3 70 A10(AP) 130 VSS 190 BA1 11 VSS 71 BA0 131 DQ12 191 VDD 12 DQ8 72 VDD 132 DQ13 192 /RAS 13 DQ9 73 /WE 133 VSS 193 /CS0 14 VSS 74 /CAS 134 DM1 194 VDD 15 /DQS1 75 VDD 135 NC 195 ODT0 16 DQS1 76 /CS1 136 VSS 196 A13 17 VSS 77 ODT1 137 DQ14 197 VDD 18 DQ10 78 VDD 138 DQ15 198 NC 19 DQ11 79 NC 139 VSS 199 VSS 20 VSS 80 VSS 140 DQ20 200 DQ36 21 DQ16 81 DQ32 141 DQ21 201 DQ37 22 DQ17 82 DQ33 142 VSS 202 VSS 23 VSS 83 VSS 143 DM2 203 DM4 24 /DQS2 84 /DQS4 144 NC 204 NC 25 DQS2 85 DQS4 145 VSS 205 VSS 26 VSS 86 VSS 146 DQ22 206 DQ38 27 DQ18 87 DQ34 147 DQ23 207 DQ39 28 DQ19 88 DQ35 148 VSS 208 VSS 29 VSS 89 VSS 149 DQ28 209 DQ44 30 DQ24 90 DQ40 150 DQ29 210 DQ45 31 DQ25 91 DQ41 151 VSS 211 VSS 32 VSS 92 VSS 152 DM3 212 DM5 33 /DQS3 93 /DQS5 153 NC 213 NC 34 DQS3 94 DQS5 154 VSS 214 VSS 35 VSS 95 VSS 155 DQ30 215 DQ46 36 DQ26 96 DQ42 156 DQ31 216 DQ47 Apacer Memory Product Specification Pin No. Pin name Pin No. Pin name Pin No. Pin name Pin No. Pin name 37 DQ27 97 DQ43 157 VSS 217 VSS 38 VSS 98 VSS 158 NC 218 DQ52 39 NC 99 DQ48 159 NC 219 DQ53 40 NC 100 DQ49 160 VSS 220 VSS 41 VSS 101 VSS 161 NC 221 DM6 42 NC 102 /DQS6 162 NC 222 NC 43 NC 103 DQS6 163 VSS 223 VSS 44 VSS 104 VSS 164 NC 224 DQ54 45 NC 105 DQ50 165 NC 225 DQ55 46 NC 106 DQ51 166 VSS 226 VSS 47 VSS 107 VSS 167 NC 227 DQ60 48 NC 108 DQ56 168 /RESET 228 DQ61 49 NC 109 DQ57 169 CKE1 229 VSS 50 CKE0 110 VSS 170 VDD 230 DM7 51 VDD 111 /DQS7 171 NC 231 NC 52 BA2 112 DQS7 172 NC 232 VSS 53 NC 113 VSS 173 VDD 233 DQ62 54 VDD 114 DQ58 174 A12 234 DQ63 55 A11 115 DQ59 175 A9 235 VSS 56 A7 116 VSS 176 VDD 236 VDDSPD 57 VDD 117 SA0 177 A8 237 SA1 58 A5 118 SCL 178 A6 238 SDA 59 A4 119 SA2 179 VDD 239 VSS 60 VDD 120 VTT 180 A3 240 VTT Apacer Memory Product Specification Pin Description Pin name Function A0 to A14 Address input Row address Column address A10 (AP) Auto precharge A0 to A14 A0 to A9 A12 (/BC) Burst chop BA0, BA1, BA2 Bank select address DQ0 to DQ63 Data input/output /RAS Row address strobe command /CAS Column address strobe command /WE Write enable /CS0, /CS1 Chip select CKE0, CKE1 Clock enable CK0, CK1 Clock input /CK0, /CK1 Differential clock input DQS0 to DQS7, /DQS0 to /DQS7 Input and output data strobe DM0 to DM7 Input mask SCL Clock input for serial PD SDA Data input/output for serial PD SA0, SA1, SA2 Serial address input VDD Power for internal circuit VDDSPD Power for serial EEPROM VREFCA Reference voltage for CA VREFDQ Reference voltage for DQ VSS Ground VTT I/O termination supply for SDRAM /RESET Set DRAM to known state ODT0, ODT1 ODT control NC No connection Apacer Memory Product Specification Block Diagram V3 D10 D11 V4 D12 ZQ DM DQ0 to DQ7 D13 V6 D14 V7 D15 V8 D16 V1 V1 V3 V2 D0 D1 V4 D2 V5 D3 V6 D4 V7 D5 Rs3 Rs3 Rs4 CK /CK Rs4 /CK CK /CS ODT CKE Address BA Command Serial PD SCL SA0 SCL SA1 SA2 A1 A2 A0 SDA U0 WP * D0 to D15: 1G bits DDR3 SDRAM Address, BA: A0 to A13, BA0 to BA2 Command: /RAS, /CAS, /WE U0: 256 bytes EEPROM Rs1: 15Ω Rs2: 39Ω Rs3: 36Ω Rs4: 240Ω V5 V8 D6 D7 Address and Control lines Rs4 /CK CK D13 /DQS SDA ZQ Rs4 DQ0 to DQ7 /CS ODT CKE Address BA Command Rs4 /CK DQS ZQ /CK DM DQ0 to DQ7 CK 8 Rs1 DM Rs4 Rs1 ZQ SDRAMs (D0 to D15), SPD V2 ZQ D14 /DQS D4 /DQS Notes : 1. DQ wiring may be changed within a byte. 2. DQ, DQS, /DQS, ODT, DM, CKE, /CS relationships must be maintained as shown. D9 /CS ODT CKE Address BA Command /CK Rs4 Rs4 /CK CK DQ0 to DQ7 /CS ODT CKE Address BA Command DQS Rs1 SPD SDRAMs (D0 to D15) SDRAMs (D0 to D15) SDRAMs (D0 to D15) VSS Rs2 Rs2 Rs2 Rs2 Rs2 Rs3 Rs3 CK /CS ODT CKE Address BA Command /CS ODT CKE Address BA Command DQ0 to DQ7 /RESET:SDRAMs (D0 to D15) VTT VDDSPD VREFCA VREFDQ VDD DM DQS /CK DM4 DQ32 to DQ39 ZQ CK Rs4 /CK CK ZQ Rs1 DM /CS ODT CKE Address BA Command /CK Rs4 Rs4 /CK CK /CS ODT CKE Address BA Command Rs4 /RESET DQ0 to DQ7 CK /CS ODT CKE Address BA Command Rs4 /CK CK CK /CK DM ZQ ZQ D15 /DQS D5 /DQS DM5 8 Rs1 DQ40 to DQ47 /DQS4 DQ0 to DQ7 DQS CK DQ0 to DQ7 DQ0 to DQ77 Rs1 DQS4 Rs2 Rs2 Rs2 Rs2 Rs2 DM /DQS DM DQS Rs1 D12 DM Rs1 /DQS5 ZQ ZQ D6 /DQS /CS ODT CKE Address BA Command DM3 8 Rs1 DQ24 to DQ31 /DQS DQS D3 DQS Rs1 DM6 8 Rs1 DQ48 to DQ55 DQS5 D16 /DQS Rs1 VTT Rs1 DQS DQ0 to DQ7 ZQ DQ0 to DQ7 VTT /DQS3 Rs1 DM DM 8 Rs1 Rs1 D11 /DQS ZQ /DQS6 Rs4 Rs1 DQ0 to DQ7 DQS6 /CK DQS3 DM DQS D2 DM7 DQ56 to DQ63 DQS D7 /DQS Rs1 CK DM2 8 Rs1 DQ16 to DQ23 /DQS DQ0 to DQ7 /CS ODT CKE Address BA Command Rs1 DQS DM ZQ /CS ODT CKE Address BA Command Rs1 DQ0 to DQ7 Rs4 Rs1 DM DQS /DQS7 ZQ VTT Rs1 Rs1 D10 /DQS Rs4 /DQS2 8 Rs1 /DQS DQ0 to DQ7 DQS D1 /CK DQS2 Rs1 DQS DM ZQ CK DM1 DQ8 to DQ15 Rs1 DQ0 to DQ7 /CK /DQS1 Rs1 DM CK DQS1 8 Rs1 DQS7 D9 /DQS /CS ODT CKE Address BA Command DQ0 to DQ7 /DQS DQS D0 /CS ODT CKE Address BA Command DM0 Rs1 DQS /CS ODT CKE Address BA Command /DQS0 Rs1 VDD VDD VTT /CS ODT CKE Address BA Command /CK1 CK1 /CS1 ODT1 CKE1 /CK0 CK0 3 Command 17 Address, BA /CS0 ODT0 CKE0 Rs1 DQS0 Apacer Memory Product Specification Physical Outline Unit: mm Front side 4.00 max 0.5 min (DATUM -A-) 4.00 min Component area (Front) 1 120 B A 47.00 1.27 ± 0.10 71.00 133.35 Component area (Back) 2.80 min C                   ±       ±   ±       ±    ±  30.00 240 17.30 121 9.50 Back side
78.B1GDJ.AF1 价格&库存

很抱歉,暂时无法提供与“78.B1GDJ.AF1”相匹配的价格&库存,您可以联系我们找货

免费人工找货