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E-TA2012 3DB N1

E-TA2012 3DB N1

  • 厂商:

    NIDEC(尼得科)

  • 封装:

    0805 (2012 Metric)

  • 描述:

    RF ATTENUATOR 3DB 50OHM 0805

  • 详情介绍
  • 数据手册
  • 价格&库存
E-TA2012 3DB N1 数据手册
E-TA THERMAL VARIABLE ATTENUATORS ■ FEATURES ■ APPLICATIONS OFlat VSWR characteristic to the temperature change. OLinear attenuation characteristic to temperature fluctuation. ORoHS compliant. O Temperature compensation of microwave high power amplifier. ■ SPECIFICATIONS OElectrical characteristics E-TA3216 E-TA2012 1, 2, 3, 4, 5 dB at 25 °C 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 dB at 25 °C DC ~ 3 GHz : +0.5 dB, DC ~ 1 GHz : -0.5 dB 1 ~ 3 GHz : -1.0dB (at 25 °C, 50 Ω load) ± 0.5 dB (at 25 °C, 50 Ω load) Attenuation Tolerance 50 Ω Impedance DC ~ 2 GHz : Less than 1.3 2 ~ 3 GHz : Less than 1.7 (at 25 °C) VSWR Temperature Coefficient Less than 1.3 (at 25 °C) N5 ∼ N8 at 1 GHz: N1 ∼ N8 at 1 GHz: Please refer to the chart of “Example of Attenuation vs. Temperature” Please refer to the chart of “Example of Attenuation vs. Temperature” DC ~ 3 GHz Frequency Range 100 mW Power Rating 63 mW Operating Temperature Range – 40 °C ~ +100 °C OTemperature Characteristics TCA : Temperature Coefficient of Attenuation N1 ~ N8 (dB/dB/°C) N1 ; – 0.0119 N4 ; – 0.0047 N7 ; – 0.0026 N2 ; – 0.0088 N5 ; – 0.0041 N8 ; – 0.0019 N3 ; – 0.0062 N6 ; – 0.0035 Note. Temperature coefficient of E-TA3216 is N5 ~ N8 and E-TA2012 is N1 ~ N8. ■ PART NUMBER DESIGNATION E-TA2012 T 1 dB N8 Series name and size E-TA3216, E-TA2012 Form of packaging T : Taping (1000 pcs/reel) Blank : Bulk (100 pcs/in plastic bags) Temperature Coefficient of Attenuation (N1, N2, N3, N4, N5, N6, N7, N8) Attenuation [dB] (1, 2, 3, 4, 5, 6, 7, 8, 9, 10) E-TA THERMAL VARIABLE ATTENUATORS ■ OUTLINE DIMENSIONS O E-TA3216 Unless otherwise specified, tolerance : ± 0.2 (Unit : mm) 0.15 2.0 Side view 0.45 ①, ② In/ Out terminal Date code ② 1.6 0.3 マーカ Marker 0.15 ① ③ Top view ④ ③, ④ Ground terminal 0.7 0.45 Side view 0.15 Date code Top view 0.2 0.9 1.0 ①, ② In/ Out terminal ① ② マーカ Marker 1.25 0.8 1.0 max 1.0 0.25 3.2 0.2 O E-TA2012 Unless otherwise specified, tolerance : ± 0.2 (Unit : mm) ③ Unit marked on this surface ④ ③, ④ Ground terminal Unit marked on this surface < Marking > ODate code (2 digits) 9 A Month(A~H,J,Y,L,M) Year(One last digit) OModel code (3 digits) 1 N1 Attenuation(1~10dB) Temperature Coefficient of attenuation(N1~N8) E-TA THERMAL VARIABLE ATTENUATORS ■ RECOMMENDED PAD OUTLINE DIMENSIONS Unless otherwise specified, tolerance : ± 0.3 (Unit : mm) O E-TA3216 O E-TA2012 2.3 3.0 0.6 0.8 1.2 0.7 0.8 0.7 0.55 1.2 0.7 1.9 0 0.5 2.0 0.55 0.9 0 Note) The zero point is center of mounting ■ EXAMPLE OF ATTENUATION VS. TEMPERATURE : 3 dB 3 dB Attenuation vs. Temperature ● E-TA2012 3dB N* 5.5 N1 5.0 N2 4.5 N3 4.0 N4 3.5 N5 3.0 N6 2.5 N7 2.0 N8 1.5 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 E-TA THERMAL VARIABLE ATTENUATORS ■ ENVIRONMENTAL CHARACTERISTICS Test item Test conditions Specifications A short time overload voltage Apply the rated voltage of 2.5 times for 5 sec. Attenuation ± 0.1 dB Load life 70 ± 3 °C, Apply rated voltage for 90 minutes followed by 30 minutes Intermission. This cycle is repeated for 1000 hours. Attenuation ± 0.2 dB 60 ± 2 °C, 90 ~ 95 %RH, Apply rated voltage for 90 minutes followed by 30 minutes Intermission. This cycle is repeated for 1000 hours. Attenuation ± 0.2 dB – 40 °C ~ 100 °C (0.5 h), 5 cycles Attenuation ± 0.1 dB Thermal shock Vibration (Vibration)10 ∼ 55 Hz、 (Amplitude)1.5 mm、 10-55-10 Hz/minutes、xyz 2h each Attenuation ± 0.1 dB Soldering heat Peak temperature 255 °C, two times maximum Attenuation ± 0.1 dB Solderability 245 ± 5 °C (lead free), 3 ± 0.5 s 95 % or more of the immersed area should be adequately wetted. ■ REFLOW PROFILE FOR SOLDERING HEAT EVALUATION (°C) 250 Peak : 250 +5 0 °C Temperature Over 230 °C 200 150 180 °C Pre Heating Zone 150 °C 90 ± 30 s 100 50 30 ± 10 s Heating time Soldering Zone Reflow : two times maximum ■ PACKAGING SPECIFICATIONS OTaping packaging specifications ‡7DSLQJZLOOEHDFFHSWHGIRUXQLWVRISFVSHUUHHO 2UGHUVZLOOEHDFFHSWHGIRUXQLWVRISFVLH SFVHWF ‡7DSLQJYHUVLRQLVER[HGZLWKRQHUHHO SFV  0D[LPXPQXPEHURIFRQVHFXWLYHPLVVLQJSLHFHV  OBulk pack specifications ‡8QLWRIEXONLQDSODVWLFEDJSDFNDJHLVSFVSHUSDFN ‡%R[LQJRIEXONLQDSODVWLFEDJLVSHUIRUPHGZLWKSFV SHUER[ E-TA THERMAL VARIABLE ATTENUATORS ■ CAUTION  &RQVWUXFWLRQ 7KHVWUXFWXUHRI(7$DQG(7$DUHGHVLJQHGWR ZLWKVWDQGIOX[DQGFOHDQLQJVROYHQWVXVHGLQWKHVROGHULQJ DQG FOHDQLQJ SURFHVV 7KLV VHDOHG VWUXFWXUH LV DOVR HIIHFWLYHIRUGXVWDQGPRLVWXUHDVZHOOEXWLWVFDSDELOLW\LV QRWOLPLWOHVVGXHWRLQVLGHPRYLQJSDUWV )RU WKH ERWK SURGXFWV WKH IROORZLQJ FRQGLWLRQV DUH QRW UHFRPPHQGHG ①(QYLURQPHQWDO DLU ZLWK VXOSKLGH JDV FRUURVLYH JDV RU UHGXFLQJJDV ②5DSLGFRROLQJRIVROYHQWV ③/RQJ WLPH GDPSLQJ LQWR VROYHQWV HVSHFLDOO\ DW KLJK WHPSHUDWXUH ④(QYLURQPHQWDODLUZLWKKLJKKXPLGLW\  1RWHVIRUVWRUDJH &DUHIXO DWWHQWLRQ PXVW EH SDLG ZKHQ WKH FRPSRQHQWV DUH VWRUHG (QYLURQPHQWDO WHPSHUDWXUH KXPLGLW\ HWF PLJKW DIIHFW WKH VROGHU DELOLW\ RI WKH WHUPLQDOV DQG WKH IXQFWLRQ RI WKH SDFNDJH/LVWHGEHORZDUHQRWHVWREHREVHUYHG ①8QGHU H[WUHPHO\ KLJK WHPSHUDWXUH DQG KXPLG FRQGL WLRQVWKHTXDOLW\GHFD\RIWKHSDFNDJHPDWHULDOVZLOOEH DFFHOHUDWHG ②,WLVUHFRPPHQGHGWRVWRUHWKHFRPSRQHQWVLQWKHURRP DW WKH WHPSHUDWXUH EHORZ  ƒ& DQG WKH UHODWLYH KXPLGLW\EHORZ ③7KHHQYLURQPHQWDODLUPXVWEHIUHHIURPFRUURVLYHJDV VXFKDVVXOSKLGHJDV ④([SRVXUHWRWKHGLUHFWVXQOLJKWDQGGXVWPXVWEHDYRLG HG ⑤+DQGOHFDUHIXOO\WRDYRLGGHIRUPDWLRQRIWHUPLQDOV ⑥3OHDVHXVHWKHSURGXFWVZLWKLQRQH\HDUIURPWKHGHOLY HU\ ⑦3OHDVHGRQRWRSHQWKHVPDOOHVWXQLWRISDFNDJHEHIRUH use. Note1. Specifications are subject to change without notice. Specifications in this catalog are reference.
E-TA2012 3DB N1
物料型号:E-TA3216和E-TA2012。

器件简介:这些衰减器具有随温度变化的平坦VSWR特性和线性衰减特性,符合RoHS标准,适用于微波高功率放大器的温度补偿。

引脚分配:文档中未明确提供引脚分配信息,但提到了输入/输出端子和接地端子。

参数特性: - 衰减值:E-TA3216在25°C时为1、2、3、4、5dB,E-TA2012为1至10dB。 - 容差:E-TA3216在DC至3GHz为+0.5dB,在DC至1GHz为-0.5dB;E-TA2012在1至3GHz为-1.0dB。 - 阻抗:50欧姆。 - VSWR:E-TA3216在DC至2GHz小于1.3,2至3GHz小于1.7;E-TA2012在所有频率下小于1.3。 - 温度系数:E-TA3216为N5至N8,E-TA2012为N1至N8,具体数值见图表。 - 频率范围:DC至3GHz。 - 功率等级:E-TA3216为100mW,E-TA2012为63mW。 - 工作温度范围:-40°C至+100°C。

功能详解:衰减器的温度系数不同,可以根据不同的应用需求选择。

应用信息:用于微波高功率放大器的温度补偿。

封装信息:提供了E-TA3216和E-TA2012的外形尺寸和公差。
E-TA2012 3DB N1 价格&库存

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