E4D10120A

E4D10120A 900 V ID @ 25˚C 11.5 A Silicon Carbide Schottky Diode E-Series Automotive VDS RDS(on) 280 mΩ Features • • • • • • Package 4th Generation SiC Merged PIN Schottky Technology Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior AEC-Q101 Qualified and PPAP Capable Humidity Resistant Benefits • • • • • • TO-220-2 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Ideal for Outdoor Environments PIN 1 Applications • • • • • CASE PIN 2 Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Automotive and Traction Power Conversion PV Inverters Part Number Package Marking E4D10120A TO-220-2 E4D10120 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Value Unit Repetitive Peak Reverse Voltage 1200 V VR DC Peak Reverse Voltage 1200 V IF Continuous Forward Current 33 16 10 A TC=25˚C TC=135˚C TC=156˚C Fig. 3 Ptot Power Dissipation 166 72 W TC=25˚C TC=110˚C Fig. 4 IFRM Repetitive Peak Forward Surge Current 44 26 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse dV/dt Diode dV/dt ruggedness 250 V/ns TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C 1 8.8 Nm lbf-in VRRM Parameter TO-220 Mounting Torque 1 E4D10120A Rev. -, 07-2019 Test Conditions VR=0-960V M3 Screw 6-32 Screw Note Electrical Characteristics Symbol Parameter Typ. Max. VF Forward Voltage 1.5 2.2 1.8 IR Reverse Current 30 55 200 QC Total Capacitive Charge C EC Unit Test Conditions Note V IF = 10 A TJ=25°C IF = 10 A TJ=175°C Fig. 1 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C Fig. 2 56 nC VR = 800 V, IF = 10A di/dt = 200 A/μs TJ = 25°C Fig. 5 Total Capacitance 777 51 44 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Fig. 6 Capacitance Stored Energy 17 μJ VR = 800 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 0.9 °C/W Fig. 8 Typical Performance 600 20 18 TJ = -55°C TJ = 25°C TJ = 75°C TJ = 125°C TJ = 175°C 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 FowardVVoltage, (V) VF (V) F Figure 1. Forward Characteristics 2 400 TJ = -55 °C IRR (μA) 12 Reverse LeakageICurrent, (μA) IRR (uA) 14 500 IFFF (A) Foward Current, I (A) IF (A) 16 E4D10120A Rev. -, 07-2019 3.0 3.5 300 TJ = 25 °C TJ = 75 °C 200 TJ = 125 °C 100 0 TJ = 175 °C 0 500 1000 VVRVoltage, (V) Reverse (V) VR (V) R 1500 Figure 2. Reverse Characteristics 2000 Typical Performance 180 120 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 100 140 120 PTot (W) PTOT (W) IF(peak) (A) IF (A) IF(peak) (A) 80 160 100 60 40 60 40 20 0 80 20 25 50 75 100 T ˚C TTCCC(°C) ˚C 125 150 0 175 25 Figure 3. Current Derating 70 150 175 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 600 Capacitance C (pF) (pF) 40 500 C (pF) Qc (nC) Capacitive Q Charge, (nC) QC (nC) TTCC ˚C (°C) 125 700 c 30 20 400 300 200 10 100 0 200 400 600 (V) ReverseVVVoltage, R (V) VR (V) R 800 Figure 5. Recovery Charge vs. Reverse Voltage 3 100 800 50 0 75 Figure 4. Power Derating Conditions: TJ = 25 °C 60 50 E4D10120A Rev. -, 07-2019 1000 0 0 1 10 (V) VR (V) (V) ReverseVVVoltage, RR 100 Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 25 Capacitance Stored ECEnergy, (mJ) EC (mJ) 20 15 10 5 0 0 200 400 600 ReverseVVoltage, (V) VR (V) R 800 1000 Junction To Case Impedance, ZthJC (oC/W) Thermal Resistance (˚C/W) Figure 7. Typical Capacitance Stored Energy 1 0.5 0.3 0.1 100E-3 0.05 0.02 10E-3 1E-3 0.01 SinglePulse 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 8. Transient Thermal Impedance 4 E4D10120A Rev. -, 07-2019 100E-3 1 Package Dimensions Package TO-220-2 POS PIN 1 PIN 2 CASE Inches Millimeters Min Max Min Max A .381 .410 9.677 10.414 6.477 B .235 .255 5.969 C .100 .120 2.540 3.048 D .223 .337 5.664 8.560 D1 .457-.490 11.60-12.45 typ D2 .277-.303 typ 7.04-7.70 typ D3 .244-.252 typ 6.22-6.4 typ E .590 .615 14.986 15.621 E1 .302 .326 7.68 8.28 E2 .227 251 5.77 6.37 F .143 .153 3.632 3.886 G 1.105 1.147 28.067 29.134 H .500 .550 12.700 13.970 L .025 .036 .635 .914 M .045 .055 1.143 1.550 N .195 .205 4.953 5.207 P .165 .185 4.191 4.699 Q .048 .054 1.219 1.372 S 3° 6° 3° 6° 6° T 3° 6° 3° U 3° 6° 3° 6° V .094 .110 2.388 2.794 W .014 .025 .356 .635 X 3° 5.5° 3° 5.5° Y .385 .410 9.779 10.414 z .130 .150 3.302 3.810 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout TO-220-2 Part Number Package Marking E4D10120A TO-220-2 E4D10120 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 E4D10120A Rev. -, 07-2019 Diode Model Diode Model CSD04060 Vf VfTT==VV T + If*R T T+If*R T V VTT= (TJj **-1.10*10 -1.3*10-3-3) ) = 0.965 1.00 ++ (T R RTT== 0.096 (TJj ** 4.00*10 1.06*10-3-4) 0.03 ++ (T Note: TJ = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C VT RT Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/power/tools-and-support/product-ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • • Wolfspeed E-Series Family: http//wolfspeed.com/E-Series Wolfspeed SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 E4D10120A Rev. -, 07-2019 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power