E4D02120E
4th Generation 1200 V, 2 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (SiC)
Schottky Barrier diode, power electronics systems can expect
to meet higher efficiency standards than Si-based solutions,
while also reaching higher frequencies and power densities.
SiC diodes can be easily paralleled to meet various application
demands, without concern of thermal runaway. In combination
with the reduced cooling requirements and improved thermal
performance of SiC products, SiC diodes are able to provide
lower overall system costs in a variety of diverse applications.
1
PIN 1
Package Type: TO-252-2
Marking: E4D02120
Applications
•
•
•
•
•
•
•
•
CASE
PIN 2
Features
•
2
Low Forward Voltage (VF) Drop with Positive
Temperature Coefficient
Zero Reverse Recovery Current / Forward
Recovery Voltage
Temperature-Independent Switching Behavior
AEC-Q101 + HV-H3TRB Qualified, PPAP Capable
Bootstrap Diode
Boost Diodes in PFC
Automotive Power Conversion
PV Inverters
Outdoor Power Conversion
Maximum Ratings (TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Repetitive Peak Reverse Voltage VRRM
1200
DC Blocking Voltage
1200
Continuous Forward Current
VDC
IF
IFRM
Power Dissipation
Ptot
Rev. 0, OCTOBER 2021
Test Conditions
TJ = 25 °C
4
TJ = 135 °C
A
Fig. 3
TJ = 160 °C
11
Tc = 25 °C, tp = 10 ms, Half Sine Wave
7
Tc = 110 °C, tp = 10 ms, Half Sine Wave
50
21
Note
V
8
2
Repetitive Peak Forward Surge
Current
Unit
W
TC = 25 °C
TC = 110 °C
Fig. 4
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
E4D02120E
2
Electrical Characteristics
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Total Capacitive Charge
QC
Typ.
Max.
1.4
1.8
1.9
10
50
40
16
Units
C
EC
Fig. 1
IF = 2 A, TJ = 175 °C
µA
nC
VR = 1200 V, TJ = 25 °C
Fig. 2
VR = 1200 V, TJ = 175 °C
VR = 800 V, TJ = 25 °C
Fig. 5
VR = 0 V, TJ = 25 °C, f = 1 MHz
17
pF
14
Capacitance Stored Energy
Note
IF = 2 A, TJ = 25 °C
V
153
Total Capacitance
Test Conditions
VR = 400 V, TJ = 25 °C, f = 1 MHz
Fig. 6
VR = 800 V, TJ = 25 °C, f = 1 MHz
5.6
µJ
VR = 800 V
Fig. 7
Note:
SiC Schottky Diodes are majority carrier devices, so there is no reverse recovery charge.
Thermal & Mechanical Characteristics
Parameter
Symbol
Value
Units
Thermal Resistance, Junction to Case (Typ.)
Rθ, JC
2.99
°C / W
Operating Junction & Storage Temperature
TJ , Tstg
-55 to +175
Maximum Processing Temperature
TPROC
325
Moisture Sensitivity Level
MSL
MSL 3
°C
Note
Fig. 8
10 min. Maximum
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Value
Human Body Model
HBM
Class 3B (≥ 8000 V)
Charge Device Model
CDM
Class C3 (≥ 1000 V)
Rev. 0, OCTOBER 2021
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E4D02120E
3
Typical Performance
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
Figure 3. Current Derating
Figure 4. Power Derating
Figure 5. Total Capacitance Charge vs. Reverse
Voltage
Figure 6. Capacitance vs. Reverse Voltage
Rev. 0, OCTOBER 2021
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E4D02120E
4
Typical Performance
Figure 7. Capacitance Stored Energy
Rev. 0, OCTOBER 2021
Figure 8. Transient Thermal Impedance
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E4D02120E
5
Package Dimensions
Package: TO-252-2
All dimensions in mm.
SYMBOL
A
A1
b
b2
b3
c
c2
D
D1
E
E1
e
H
L
L2
L3
L4
θ
MILLIMETERS
MIN
MAX
2.159
2.413
0
0.13
0.64
0.89
0.653
1.143
5.004
5.6
0.457
0.61
0.457
0.864
5.867
6.248
5.21
6.35
7.341
4.32
4.58 BSC
9.65
10.414
1.106
1.78
0.51 BSC
0.889
1.27
0.64
1.01
0°
8°
Tjb June 2015
MX+DI+PSI
Tjb June 2015
MX+DI+PSI
Recommended Solder Pad Layout
Learn more about recommended soldering profiles in this application note.
Rev. 0, OCTOBER 2021
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E4D02120E
6
Notes
This document and the information contained herein are subject to change without notice. Any such change shall be evidenced by the publication of
an updated version of this document by Cree. No communication from any employee or agent of Cree or any third party shall effect an amendment
or modification of this document. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree.
Not withstanding any application-specific information, guidance, assistance, or support that Cree may provide, the buyer of this product is
solely responsible for determining the suitability of this product for the buyer’s purposes, including without limitation for use in the applications
identified in the next bullet point, and for the compliance of the buyers’ products, including those that incorporate this product, with all
applicable legal, regulatory, and safety-related requirements.
.
This product has not been designed or tested for use in, and is not intended for use in, applications in which failure of the product would reasonably
be expected to cause death, personal injury, or property damage, including but not limited to equipment implanted into the human body, life-support
machines, cardiac defibrillators, and similar emergency medical equipment, aircraft navigation, communication, and control systems, aircraft power
and propulsion systems, air traffic control systems, and equipment used in the planning, construction, maintenance, or operation of nuclear facilities.
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted
for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013.
RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published
notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact your Cree representative to ensure you
get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/power
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Rev. 0, OCTOBER 2021
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