E4D02120E-TR

E4D02120E-TR

  • 厂商:

    WOLFSPEED

  • 封装:

    TO-252(DPAK)

  • 描述:

    二极管 1200 V 8A 表面贴装型 TO-252-2

  • 数据手册
  • 价格&库存
E4D02120E-TR 数据手册
E4D02120E 4th Generation 1200 V, 2 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. 1 PIN 1 Package Type: TO-252-2 Marking: E4D02120 Applications • • • • • • • • CASE PIN 2 Features • 2 Low Forward Voltage (VF) Drop with Positive Temperature Coefficient Zero Reverse Recovery Current / Forward Recovery Voltage Temperature-Independent Switching Behavior AEC-Q101 + HV-H3TRB Qualified, PPAP Capable Bootstrap Diode Boost Diodes in PFC Automotive Power Conversion PV Inverters Outdoor Power Conversion Maximum Ratings (TC = 25°C unless otherwise specified) Parameter Symbol Value Repetitive Peak Reverse Voltage VRRM 1200 DC Blocking Voltage 1200 Continuous Forward Current VDC IF IFRM Power Dissipation Ptot Rev. 0, OCTOBER 2021 Test Conditions TJ = 25 °C 4 TJ = 135 °C A Fig. 3 TJ = 160 °C 11 Tc = 25 °C, tp = 10 ms, Half Sine Wave 7 Tc = 110 °C, tp = 10 ms, Half Sine Wave 50 21 Note V 8 2 Repetitive Peak Forward Surge Current Unit W TC = 25 °C TC = 110 °C Fig. 4 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com E4D02120E 2 Electrical Characteristics Parameter Symbol Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Typ. Max. 1.4 1.8 1.9 10 50 40 16 Units C EC Fig. 1 IF = 2 A, TJ = 175 °C µA nC VR = 1200 V, TJ = 25 °C Fig. 2 VR = 1200 V, TJ = 175 °C VR = 800 V, TJ = 25 °C Fig. 5 VR = 0 V, TJ = 25 °C, f = 1 MHz 17 pF 14 Capacitance Stored Energy Note IF = 2 A, TJ = 25 °C V 153 Total Capacitance Test Conditions VR = 400 V, TJ = 25 °C, f = 1 MHz Fig. 6 VR = 800 V, TJ = 25 °C, f = 1 MHz 5.6 µJ VR = 800 V Fig. 7 Note: SiC Schottky Diodes are majority carrier devices, so there is no reverse recovery charge. Thermal & Mechanical Characteristics Parameter Symbol Value Units Thermal Resistance, Junction to Case (Typ.) Rθ, JC 2.99 °C / W Operating Junction & Storage Temperature TJ , Tstg -55 to +175 Maximum Processing Temperature TPROC 325 Moisture Sensitivity Level MSL MSL 3 °C Note Fig. 8 10 min. Maximum Electrostatic Discharge (ESD) Classifications Parameter Symbol Value Human Body Model HBM Class 3B (≥ 8000 V) Charge Device Model CDM Class C3 (≥ 1000 V) Rev. 0, OCTOBER 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com E4D02120E 3 Typical Performance Figure 1. Forward Characteristics Figure 2. Reverse Characteristics Figure 3. Current Derating Figure 4. Power Derating Figure 5. Total Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage Rev. 0, OCTOBER 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com E4D02120E 4 Typical Performance Figure 7. Capacitance Stored Energy Rev. 0, OCTOBER 2021 Figure 8. Transient Thermal Impedance 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com E4D02120E 5 Package Dimensions Package: TO-252-2 All dimensions in mm. SYMBOL A A1 b b2 b3 c c2 D D1 E E1 e H L L2 L3 L4 θ MILLIMETERS MIN MAX 2.159 2.413 0 0.13 0.64 0.89 0.653 1.143 5.004 5.6 0.457 0.61 0.457 0.864 5.867 6.248 5.21 6.35 7.341 4.32 4.58 BSC 9.65 10.414 1.106 1.78 0.51 BSC 0.889 1.27 0.64 1.01 0° 8° Tjb June 2015 MX+DI+PSI Tjb June 2015 MX+DI+PSI Recommended Solder Pad Layout Learn more about recommended soldering profiles in this application note. Rev. 0, OCTOBER 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com E4D02120E 6 Notes This document and the information contained herein are subject to change without notice. Any such change shall be evidenced by the publication of an updated version of this document by Cree. No communication from any employee or agent of Cree or any third party shall effect an amendment or modification of this document. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree. Not withstanding any application-specific information, guidance, assistance, or support that Cree may provide, the buyer of this product is solely responsible for determining the suitability of this product for the buyer’s purposes, including without limitation for use in the applications identified in the next bullet point, and for the compliance of the buyers’ products, including those that incorporate this product, with all applicable legal, regulatory, and safety-related requirements. . This product has not been designed or tested for use in, and is not intended for use in, applications in which failure of the product would reasonably be expected to cause death, personal injury, or property damage, including but not limited to equipment implanted into the human body, life-support machines, cardiac defibrillators, and similar emergency medical equipment, aircraft navigation, communication, and control systems, aircraft power and propulsion systems, air traffic control systems, and equipment used in the planning, construction, maintenance, or operation of nuclear facilities. RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact your Cree representative to ensure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/power © 2021 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 0, OCTOBER 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
E4D02120E-TR 价格&库存

很抱歉,暂时无法提供与“E4D02120E-TR”相匹配的价格&库存,您可以联系我们找货

免费人工找货