C30618L-350

Datasheet Photon Detection C30617L-100 and C30618L-350 – InGaAs PIN Photodiodes High Speed InGaAs PIN on Ceramic Surface Mount Substrate Excelitas’ C30617L-100 and C30618L-350 PIN Diodes are high speed, InGaAs diodes that provide high responsivity for high speed applications. Key Features • High Bandwidth, up to 3.5 GHz • High responsivity at 1300 nm and 1550 nm • Active Area diameter of 100 µm and 350 µm • Low capacitance • Compact, robust ceramic SMT package • Customizations (e.g. filters) possible • RoHS compliant Applications • High volume consumer applications • LiDAR • Telecommunication • Instrumentation • High speed switches • Optical time reference for laser range finders All specifications are referring to an ambient temperature of TA = 22 °C, λ = 1550 nm and typical VOP. Table 1: Key parameters Parameter Operating Voltage Spectral Range Peak Responsivity Responsivity Symbol VOP  peak R1300 R1550 Min 1 960 0.80 0.95 Typ 5 1550 0.90 1.05 Max 10 1700 Unit V nm nm A/W www.excelitas.com C30617L-100_C30618L-350 revision 2021-01a Page 1 of 7 C30617L-100 and C30618L-350 – InGaAs PIN Photodiodes High Speed InGaAs PIN on Ceramic Surface Mount Substrate Table 2: Ordering Information Parameter Active Area Shape Useful Area Useful Diameter C30617L-100 Circular 7850 100 C30618L-350 Circular 96200 350 Units µm2 µm Table 3: Absolute Maximum Ratings Parameter Average Forward Current Total Power dissipation Storage Temperature Operating Temperature Symbol IF Ptot TS TOp Value 10 100 -60 … 125 -40 … 125 Units mA mW °C °C Soldering Temperature3 TP 250 °C Note 1: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Note 2: Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note 3: For detailed reflow information, refer to Table 8. Table 4: Optical Specifications C30617L-100 Parameter Rise Time / Fall Time Bandwidth Symbol tr / tf f3dB Minimum Typical 0.07 3.50 Maximum 0.50 Units ns GHz Minimum Typical 0.50 0.75 Maximum 1.00 Units ns GHz Table 5: Optical Specifications C30618L-350 Parameter Rise Time / Fall Time Bandwidth www.excelitas.com Symbol tr / tf f3dB Page 2 of 7 C30617L-100_C30618L-350 revision 2021-01a C30617L-100 and C30618L-350 – InGaAs PIN Photodiodes High Speed InGaAs PIN on Ceramic Surface Mount Substrate Table 6: Electrical Specification C30617L-100 Parameter Breakdown Voltage Capacitance Dark Current Dark Noise1 Noise Equivalent Power2 Symbol VBD C iD iN NEP Minimum 25 Typical 60 0.6