VTB9413BH

VTB Process Photodiode VTB9412BH, 9413BH PACKAGE DIMENSIONS inch (mm) CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response. Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) SYMBOL ISC TC ISC VOC TC VOC ID RSH TC R SH CJ CHARACTERISTIC Typ. .8 1.3 Max. Min. Typ. .8 1.3 UNITS Max. H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K .02 Open Circuit Voltage H = 100 fc, 2850 K 420 420 mV VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/°C Dark Current H = 0, VR = 2.0 V Shunt Resistance H = 0, V = 10 mV .25 7.0 GΩ RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/°C Junction Capacitance H = 0, V = 0 .31 .31 nF Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. D* Min. VTB9413BH Short Circuit Current λrange NEP VTB9412BH TEST CONDITIONS .08 µA .02 .08 100 330 720 20 330 580 2 40 2 ±50 nm V ±50 Degrees W ⁄ Hz cm Hz ⁄ W 5.3 x 10 (Typ.) Specific Detectivity 2.4 x 10 12 (Typ.) 1.2 x 10 13 (Typ.) 44 nm 40 Noise Equivalent Power Phone: 877-734-6786 Fax: 450-424-3413 pA 580 1.1 x 10-14 (Typ.) Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 -14 720 %/°C www.excelitas.com