VTB9412H

VTB Process Photodiode VTB9412H, 9413H PACKAGE DIMENSIONS inch (mm) CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of clear epoxy. These diodes have very high shunt resistance and have good blue response. Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) SYMBOL CHARACTERISTIC VTB9412H TEST CONDITIONS Min. ISC TC ISC VOC TC VOC ID RSH 8 Typ. VTB9413H Max. 13 Min. 8 Typ. UNITS Max. Short Circuit Current H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 100 fc, 2850 K 490 490 mV VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/°C Dark Current H = 0, VR = 2.0 V Shunt Resistance H = 0, V = 10 mV .25 7.0 GΩ .12 13 .23 µA .12 .23 100 20 %/°C pA RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/°C CJ Junction Capacitance H = 0, V = 0 .31 .31 nF SR Sensitivity 365 nm TC R SH λrange Spectral Application Range .09 320 .09 1100 320 A/W 1100 nm λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. ±50 ±50 Degrees NEP Noise Equivalent Power 3.0 x 10-14 (Typ.) 5.9 x 10-15 (Typ.) Specific Detectivity 4.2 x 10 12 (Typ.) 2.1 x 10 13 (Typ.) W ⁄ Hz cm Hz ⁄ W D* Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 920 2 40 2 Phone: 877-734-6786 Fax: 450-424-3413 43 920 nm 40 V www.excelitas.com