VTT1227H

.025" NPN Phototransistors VTT1225H, 26H, 27H Clear T-1¾ (5 mm) Plastic Packa PACKAGE DIMENSIONS inch (mm) CASE 26 T-1¾ (5 mm) CHIP TYPE: 25T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A small area high speed NPN silicon phototransistor (@ 25°C unless otherwise noted) mounted in a 5 mm diameter lensed, end looking, Maximum Temperatures transparent plastic package. Detectors in this series have Storage Temperature: a half power acceptance angle (θ1/2) of 5°. These devices Operating Temperature: are spectrally and mechanically matched to the VTE12xxH Continuous Power Dissipation: series of IREDs. Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) RoHS Compliant -40°C to 100°C -40°C to 100°C 50 mW 0.71 mW/°C 25 mA 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92) Light Current Dark Current Collector Breakdown Emitter Breakdown Saturation Voltage Rise/Fall Time lC lCEO VBR(CEO) VBR(ECO) VCE(SAT) tR/tF H=0 lC = 100 µA H=0 lE = 100 µA H=0 lC = 1.0 mA H = 400 fc lC = 1.0 mA RL = 100 Ω Volts, Min. Volts, Min. Volts, Max. µsec, Typ. Part Number mA Min. Max. H fc (mW/cm2) VCE = 5.0 V (nA) Max. VCE (Volts) Angular Response θ1/2 Typ. VTT1225H 4.0 — 100 (5) 100 10 30 5.0 0.25 1.5 ±5° VTT1226H 7.5 — 100 (5) 100 10 30 5.0 0.25 3.0 ±5° VTT1227H 12.0 — 100 (5) 100 10 30 5.0 0.25 4.0 ±5° Refer to General Product Notes, page 2. Excelitas Technologies, 22001 Dumberry, Vaudreuil, QC, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 94 www.excelitas.com