VTT9002H

.040" NPN Phototransistors VTT9002H, 9003H Clear Epoxy TO-106 Ceramic Packag PACKAGE DIMENSIONS inch (mm) CASE 8 TO-106 (FLAT) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package. The chip is protected with a layer of clear epoxy. The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to any of PerkinElmer IREDs. RoHS Compliant (@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -20°C to 70°C -20°C to 70°C 100 mW 2.5 mW/°C 25 mA 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92) Light Current Dark Current Collector Breakdown Emitter Breakdown Saturation Voltage Rise/Fall Time lC lCEO VBR(CEO) VBR(ECO) VCE(SAT) tR/tF H=0 lC = 100 µA H=0 lE = 100 µA H=0 lC = 1.0 mA H = 400 fc lC = 1.0 mA RL = 100 Ω Part Number mA Min. Max. H fc (mW/cm2) VCE = 5.0 V Angular Response θ1/2 (nA) Max. VCE (Volts) Volts, Min. Volts, Min. Volts, Max. µsec, Typ. Typ. VTT9002H 2.0 — 100 (5) 100 10 30 6.0 0.55 4.0 ±50° VTT9003H 5.0 — 100 (5) 100 10 30 6.0 0.55 6.0 ±50° Refer to General Product Notes, page 2. Excelitas Technologies, 22001 Dumberry, Vaudreuil, QC, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 100 www.excelitas.com