.040" NPN Phototransistors
VTT9102H, 9103H
Epoxy Lensed TO-106 Ceramic Package
PACKAGE DIMENSIONS inch (mm)
CASE 9 TO-106 (LENSED)
CHIP TYPE: 40T
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
A medium area high sensitivity NPN silicon
phototransistor in a recessed TO-106 ceramic package.
The chip is protected with a lens of clear epoxy. The base
connection is brought out allowing conventional transistor
biasing. These devices are spectrally matched to any of
PerkinElmer IREDs.
RoHS Compliant
(@ 25°C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-20°C to 70°C
-20°C to 70°C
100 mW
2.5 mW/°C
50 mA
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Light Current
Dark Current
Collector
Breakdown
Emitter
Breakdown
Saturation
Voltage
Rise/Fall Time
lC
lCEO
VBR(CEO)
VBR(ECO)
VCE(SAT)
tR/tF
H=0
lC = 100 µA
H=0
lE = 100 µA
H=0
lC = 1.0 mA
H = 400 fc
lC = 1.0 mA
RL = 100 Ω
Part Number
mA
Min.
Max.
H
fc (mW/cm2)
VCE = 5.0 V
Angular
Response θ1/2
(nA)
Max.
VCE
(Volts)
Volts, Min.
Volts, Min.
Volts, Max.
µsec, Typ.
Typ.
VTT9102H
6.0
—
100 (5)
100
5
30
4.0
0.55
6.0
±42°
VTT9103H
13.0
—
100 (5)
100
5
30
4.0
0.55
10.0
±42°
Refer to General Product Notes, page 2.
Excelitas Technologies, 22001 Dumberry, Vaudreuil, QC, Canada J7V 8P7
Phone: 877-734-6786 Fax: 450-424-3413
101
www.excelitas.com
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