NDL26PFI-8KET TR

2Gb (x16) - DDR3/DDR3L Synchronous DRAM Preliminary Datasheet 128M x 16 bit DDR3/3L Synchronous DRAM Overview The 2Gb DDR3/3L SDRAM is double data rate architecture to achieve high-speed double data rate transfer rates of up to 1866 Mb/sec/pin for general applications. It is internally configured as an eight bank DRAM. The 2Gb chip is organized as 16Mbit x 16 I/Os x 8 bank devices. The chip is designed to comply with all DDR3L DRAM key features, including full backward compatibility to DDR3. Hereafter the device will be referred to as DDR3L for both part numbers. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks and inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pair in a source synchronous fashion. These devices operate with a single +1.35V -0.067V / +0.1V power supply and are available in BGA packages. Features ⚫ JEDEC ⚫ Power Standard Compliant supplies: VDD & VDDQ = +1.35V ⚫ Programmable ⚫ Additive Latency (AL): 0, CL-1, CL-2 ⚫ Backward compatible to VDD & VDDQ = +1.5V ±0.075V ⚫ Programmable ⚫ Operating temperature range: ⚫ Burst - Extended Test (ET): TC = 0~95°C - Industrial (IT): TC = -40~95°C - Automotive (AT): TC = -40~105°C ⚫ Supports JEDEC clock jitter specification ⚫ Fully synchronous operation ⚫ Fast clock rate: 800/933MHz ⚫ Differential Clock, CK & CK# ⚫ Bidirectional differential data strobe - DQS & DQS# ⚫8 internal banks for concurrent operation ⚫ 8n-bit prefetch architecture ⚫ Pipelined internal architecture ⚫ Precharge Mode & Extended Mode registers Burst lengths: 4, 8 type: Sequential / Interleave ⚫ Output Driver Impedance Control ⚫ Average refresh period - 8192 cycles/64ms (7.8us at -40°C ≦ TC ≦ +85°C) - 8192 cycles/32ms (3.9us at +85°C ≦ TC ≦ +95°C) - 8192 cycles/16ms (1.95us at +95°C ≦ TC ≦ +105°C) ⚫ Write ⚫ ZQ Leveling Calibration ⚫ Dynamic ⚫ RoHS ⚫ Auto ODT (Rtt_Nom & Rtt_WR) compliant Refresh and Self Refresh ⚫ Package: Pb and Halogen Free - 96-ball 7.5 x 13 x 1.0mm FBGA & active power down DISCLAIMER: All product, product specifications, and data are subject to change without notice to improve reliability, function or design, or otherwise. The information provided herein is correct to the best of Insignis Technology Corporation’s knowledge. No liability for any errors, facts or opinions is accepted. Customers must satisfy themselves as to the suitability of this product for their application. No responsibility for any loss as a result of any person placing reliance on any material contained herein will be accepted. NDL.T26PFIv3.9-2Gb(x16)20200325 2Gb (x16)-DDR3L Synchronous DRAM 128Mx16 – NDL26P & NDT26P How to Order Function Density IO Pkg Width Type DDR3L 2Gb x16 FBGA Pkg Size Option 7.5x13 (x1.0) Speed & Latency 1600-11-11-11 Extended Test INSIGNIS PART NUMBER: NDL26PFI-8KET DDR3L 2Gb x16 FBGA 7.5x13 (x1.0) 1600-11-11-11 Industrial Temp NDL26PFI-8KIT DDR3L 2Gb x16 FBGA 7.5x13 (x1.0) 1600-11-11-11 Automotive Temp NDL26PFI-8KAT DDR3L 2Gb x16 FBGA 7.5x13 (x1.0) 1866-13-13-13 Extended Test NDL26PFI-9MET DDR3L 2Gb x16 FBGA 7.5x13 (x1.0) 1866-13-13-13 Industrial Temp NDL26PFI-9MIT DDR3L 2Gb x16 FBGA 7.5x13 (x1.0) 1866-13-13-13 Automotive Temp NDL26PFI-9MAT Visit: http://insignis-tech.com/how-to-buy NDL.T26PFIv3.9-2Gb(x16)20200325 2 2Gb (x16)-DDR3L Synchronous DRAM 128Mx16 – NDL26P & NDT26P Table 1. Speed Grade Information Speed Grade DDR3L-1600 DDR3L-1866 Clock Frequency 800MHz 933MHz CAS Latency 11 13 tRCD (ns) tRP (ns) 13.75 13.91 13.75 13.91 Figure 1. Ball Assignment (FBGA Top View) NDL.T26PFIv3.9-2Gb(x16)20200325 3 2Gb (x16)-DDR3L Synchronous DRAM 128Mx16 – NDL26P & NDT26P Figure 2. Block Diagram Row Decoder DLL CLOCK BUFFER CK CK# CKE 16M x 16 CELL ARRAY (BANK #0) Column Decoder CS# RAS# CAS# WE# 16M x 16 CELL ARRAY (BANK #1) Column Decoder Row Decoder COMMAND DECODER CONTROL SIGNAL GENERATOR Row Decoder RESET# 16M x 16 CELL ARRAY (BANK #2) Column Decoder COLUMN COUNTER MODE REGISTER Row Decoder A10/AP A12/BC# 16M x 16 CELL ARRAY (BANK #3) Column Decoder A0~A9 A11 A13 BA0 BA1 BA2 Row Decoder ADDRESS BUFFER 16M x 16 CELL ARRAY (BANK #4) REFRESH COUNTER ZQ CAL ZQCL ZQCS Row Decoder Column Decoder 16M x 16 CELL ARRAY (BANK #5) Column Decoder RZQ LDQS LDQS# UDQS UDQS# DATA STROBE BUFFER Row Decoder VSSQ DQ Buffer 16M x 16 CELL ARRAY (BANK #6) Column Decoder DQ0 Row Decoder ~ DQ15 16M x 16 CELL ARRAY (BANK #7) Column Decoder ODT LDM UDM NDL.T26PFIv3.9-2Gb(x16)20200325 4 2Gb (x16)-DDR3L Synchronous DRAM 128Mx16 – NDL26P & NDT26P Figure 3. State Diagram This simplified State Diagram is intended to provide an overview of the possible state transitions and the commands to control them. In particular, situations involving more than one bank, the enabling or disabling of on-die termination, and some other events are not captured in full detail MRS,MPR, Write Leveling Self Refresh E Initialization from any RESET state ZQCL MRS ZQ Calibration X Reset Procedure SR Power On SR Power applied ZQCL,ZQCS Idle Refreshing REF PD E PD ACT X ACT = Active PRE = Precharge Active Power Down Precharge Power Down Activating PREA = Precharge All PD X MRS = Mode Register Set PD E REF = Refresh RESET = Start RESET Procedure Bank Activating Read = RD, RDS4, RDS8 Read A = RDA, RDAS4, RDAS8 WRITE RE AD WR ITE A Write A = WRA, WRAS4, WRAS8 TE RI W Write = WR, WRS4, WRS8 READ ZQCL = ZQ Calibration Long ZQCS = ZQ Calibration Short READ Writing A AD RE PDE = Enter Power-down PDX = Exit Power-down SRE = Self-Refresh entry SRX = Self-Refresh exit WRITE A MPR = Multi-Purpose Register READ A A ITE WR RE AD A PR E ,P RE A Automatic Sequence Command Sequence PRE, PREA EA PR E, PR Writing Precharging NDL.T26PFIv3.9-2Gb(x16)20200325 Reading WRITE 5 Reading 2Gb (x16)-DDR3L Synchronous DRAM 128Mx16 – NDL26P & NDT26P Ball Descriptions Table 2. Ball Details Symbol Type Description CK, CK# Input Differential Clock: CK and CK# are driven by the system clock. All SDRAM input signals are sampled on the crossing of positive edge of CK and negative edge of CK#. Output (Read) data is referenced to the crossings of CK and CK# (both directions of crossing). CKE Input Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CK signal. If CKE goes LOW synchronously with clock, the internal clock is suspended from the next clock cycle and the state of output and burst address is frozen as long as the CKE remains LOW. When all banks are in the idle state, deactivating the clock controls the entry to the Power Down and Self Refresh modes. BA0-BA2 Input Bank Address: BA0-BA2 define to which bank the BankActivate, Read, Write, or Bank Precharge command is being applied. A0-A13 Input Address Inputs: Provide the row address (A0-13) for Active commands and the column address (A0-9) for Read/Write commands to select one location out of the memory array in the respective bank. (A10/AP and A12/BC# have additional functions). The address inputs also provide the op-code during Mode Register Set commands. A10/AP Input Auto-Precharge: A10 is sampled during Read/Write commands to determine whether Autoprecharge should be performed to the accessed bank after the Read/Write operation. (HIGH: Autoprecharge; LOW: no Autoprecharge). A10 is sampled during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). A12/BC# Input Burst Chop: A12/BC# is sampled during Read and Write commands to determine if burst chop (on the fly) will be performed. (HIGH - no burst chop; LOW - burst chopped). CS# Input Chip Select: CS# enables (sampled LOW) and disables (sampled HIGH) the command decoder. All commands are masked when CS# is sampled HIGH. It is considered part of the command code. RAS# Input Row Address Strobe: The RAS# signal defines the operation commands in conjunction with the CAS# and WE# signals and is latched at the crossing of positive edges of CK and negative edge of CK#. When RAS# and CS# are asserted "LOW" and CAS# is asserted "HIGH" either the BankActivate command or the Precharge command is selected by the WE# signal. When the WE# is asserted "HIGH" the BankActivate command is selected and the bank designated by BA is turned on to the active state. When the WE# is asserted "LOW" the Precharge command is selected and the bank designated by BA is switched to the idle state after the precharge operation. CAS# Input Column Address Strobe: The CAS# signal defines the operation commands in conjunction with the RAS# and WE# signals and is latched at the crossing of positive edges of CK and negative edge of CK#. When RAS# is held "HIGH" and CS# is asserted "LOW" the column access is started by asserting CAS# "LOW". Then, the Read or Write command is selected by asserting WE# “HIGH" or “LOW". WE# Input Write Enable: The WE# signal defines the operation commands in conjunction with the RAS# and CAS# signals and is latched at the crossing of positive edges of CK and negative edge of CK#. The WE# input is used to select the BankActivate or Precharge command and Read or Write command. LDQS, Input / LDQS# Output Bidirectional Data Strobe: Specifies timing for Input and Output data. Read Data Strobe is edge triggered. Write Data Strobe provides a setup and hold time for data and DQM. LDQS is for DQ0~7, UDQS is for DQ8~15. The data strobes LDOS and UDQS are paired with LDQS# and UDQS# to provide differential pair signaling to the system during both reads and writes. UDQS UDQS# LDM, UDM Input Data Input Mask: Input data is masked when DM is sampled HIGH during a write cycle. LDM masks DQ0-DQ7, UDM masks DQ8-DQ15. DQ0-DQ15 Input / Output Data I/O: The DQ0-DQ15 input and output data are synchronized with positive and negative edges of DQS and DQS#. TheI/Os are byte-maskable during Writes. NDL.T26PFIv3.9-2Gb(x16)20200325 6 2Gb (x16)-DDR3L Synchronous DRAM 128Mx16 – NDL26P & NDT26P ODT Input On Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR3L SDRAM. When enabled, ODT is applied to each DQ, DQS, DQS#. The ODT pin will be ignored if Mode-registers, MR1and MR2, are programmed to disable RTT. RESET# Input Active Low Asynchronous Reset: Reset is active when RESET# is LOW, and inactive when RESET# is HIGH. RESET# must be HIGH during normal operation. RESET# is a CMOS rail to rail signal with DC high and low at 80% and 20% of VDD. VDD Supply Power Supply: +1.35V -0.067V/+0.1V / +1.5V 0.075V. VSS Supply Ground VDDQ Supply DQ Power: +1.35V -0.067V/+0.1V / +1.5V 0.075V. VSSQ Supply DQ Ground VREFCA Supply Reference voltage for CA VREFDQ Supply Reference voltage for DQ ZQ Supply Reference pin for ZQ calibration. NC - No Connect: These pins should be left unconnected. NDL.T26PFIv3.9-2Gb(x16)20200325 7 2Gb (x16)-DDR3L Synchronous DRAM 128Mx16 – NDL26P & NDT26P Operation Mode Truth Table The following tables provide a quick reference of available DDR3L SDRAM commands, including CKE power-down modes and bank-to-bank commands. Table 3. Truth Table (Note (1), (2)) Command State CKEn-1(3) CKEn DM BA0-2 A10/A A0-9, 11, 13 A12/BC# CS# RAS# CAS# WE# P Idle(4) H H X V Single Bank Precharge Any H H X V L V All Banks Precharge Any H H X V H Write (Fixed BL8 or BC4) Active(4) H H X V L Write (BC4, on the fly) Active(4) H H X V Write (BL8, on the fly) Active(4) H H X Active(4) H H Active(4) H Active(4) Read (Fixed BL8 or BC4) BankActivate L L H H V L L H L V V L L H L V V L H L L L V L L H L L V L V H L H L L X V H V V L H L L H X V H V L L H L L H H X V H V H L H L L Active(4) H H X V L V V L H L H Read (BC4, on the fly) Active(4) H H X V L V L L H L H Read (BL8, on the fly) Active(4) H H X V L V H L H L H Active(4) H H X V H V V L H L H Active(4) H H X V H V L L H L H Active(4) H H X V H V H L H L H (Extended) Mode Register Set Idle H H X V L L L L No-Operation Any H H X V V V V L H H H Device Deselect Any H H X X X X X H X X X Refresh Idle H H X V V V V L L L H SelfRefresh Entry Idle H L X V V V V L L L H SelfRefresh Exit Idle L H X X X X X H X X X V V V V L H H H X X X X H X X X V V V V L H H H X X X X H X X X Write with Autoprecharge (Fixed BL8 or BC4) Write with Autoprecharge (BC4, on the fly) Write with Autoprecharge (BL8, on the fly) Read with Autoprecharge (Fixed BL8 or BC4) Read with Autoprecharge (BC4, on the fly) Read with Autoprecharge (BL8, on the fly) Row address OP code Power Down Mode Entry Idle H L X Power Down Mode Exit Any L H X V V V V L H H H Data Input Mask Disable Active H X L X X X X X X X X Active H X H X X X X X X X X ZQ Calibration Long Idle H H X X H X X L H H L ZQ Calibration Short Idle X L H H L Data Input Mask Enable(5) H H X X L X Note 1: V=Valid data, X=Don't Care, L=Low level, H=High level Note 2: CKEn signal is input level when commands are provided. Note 3: CKEn-1 signal is input level one clock cycle before the commands are provided. Note 4: These are states of bank designated by BA signal. Note 5: LDM and UDM can be enabled respectively. NDL.T26PFIv3.9-2Gb(x16)20200325 8 2Gb (x16)-DDR3L Synchronous DRAM 128Mx16 – NDL26P & NDT26P Functional Description The DDR3L SDRAM is a high-speed dynamic random access memory internally configured as an eight-bank DRAM. The DDR3L SDRAM uses an 8n prefetch architecture to achieve high speed operation. The 8n Prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3L SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins. Read and write operation to the DDR3L SDRAM are burst oriented, start at a selected location, and continue for a burst length of eight or a ‘chopped’ burst of four in a programmed sequence. Operation begins with the registration of an Active command, which is then followed by a Read or Write command. The address bits registered coincident with the Active command are used to select the bank and row to be activated (BA0-BA2 select the bank; A0-A13 select the row). The address bit registered coincident with the Read or Write command are used to select the starting column location for the burst operation, determine if the auto precharge command is to be issued (via A10), and select BC4 or BL8 mode ‘on the fly’ (via A12) if enabled in the mode register. Prior to normal operation, the DDR3L SDRAM must be powered up and initialized in a predefined manner. The following sections provide detailed information covering device reset and initialization, register definition, command descriptions and device operation. Figure 4. Reset and Initialization Sequence at Power-on Ramping Ta Tb Tc Td Te Tf Tg Th Ti Tj Tk CK# CK VDD VDDQ tCKSRX T=200μs T=500μs RESET# Tmin=10ns tIS CKE tDLLK tIS COMMAND Note 1 BA tXPR tMRD tMRD tMRD tMOD MRS MRS MRS MRS MR2 MR3 MR1 MR0 tZQinit ZQCL Note 1 VALID tIS ODT VALID tIS Static LOW in case RTT_Nom is enabled at time Tg, otherwise static HIGH or LOW VALID RTT NOTE 1. From time point "Td" until "Tk " NOP or DES commands must be applied between MRS and ZQCL commands. TIME BREAK NDL.T26PFIv3.9-2Gb(x16)20200325 9 Don't Care 2Gb (x16)-DDR3L Synchronous DRAM 128Mx16 – NDL26P & NDT26P Power-up and Initialization The Following sequence is required for POWER UP and Initialization 1. Apply power (RESET# is recommended to be maintained below 0.2 x VDD, all other inputs may be undefined). RESET# needs to be maintained for minimum 200us with stable power. CKE is pulled “Low” anytime before RESET# being de-asserted (min. time 10ns). The power voltage ramp time between 300mV to VDDmin must be no greater than 200ms; and during the ramp, VDD>VDDQ and (VDD-VDDQ)