MMA-004023D-M4

MMA-004023D 30KHz-50GHz Traveling Wave Amplifier With Output Power Detector Preliminary Data Sheet Features: • • • • • • • • Frequency Range: 30KHz – 50 GHz P1dB: +23 dBm Vout: 7V p-p @50Ω Gain: 15.5 dB Vdd =7 V Ids = 240 mA Input and Output Fully Matched to 50 Ω On-Chip Output Power Voltage Detector Die Size 2.35mm x 1.05mm x 0.05 mm Applications: • • • • Fiber optics communication systems Microwave and wireless communication systems Microwave and optical instrumentations Military and EW equipments Description: The MMA-004023D is a broadband GaAs MMIC Traveling Wave Amplifier (TWA) with medium output power and high gain over full 30KHz to 50GHz frequency range. This amplifier is optimally designed for broadband applications requiring flat gain and group delay with excellent input and output matches over a 30KHz to 50GHz frequency range. Absolute Maximum Ratings: SYMBOL PARAMETERS Vds Vg1 Drain-Source Voltage First Gate-Source Voltage (Ta= 25 °C)* UNITS Min. V Max. 10 V -8 0 mA -38 1 4 Ig1 First Gate Current Vg2 Second Gate-Source Voltage V -3.5 Ig2 Second Gate-Source Current mA -20 Ids Drain Current mA 340 Pin max RF Input Power dBm 17 Tch Channel Temperature ºC +150 Tstg Storage Temperature ºC -55 to +165 Tmax Max. Assembly Temp (60 sec max) ºC +300 *Operation of this device above any one of these parameters may cause permanent damage. Microwave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com MMA-004023D Preliminary data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 1 of 14, Latest Update May 2019 MMA-004023D 30KHz-50GHz Traveling Wave Amplifier With Output Power Detector Preliminary Data Sheet Electrical Specifications: Vds=7V, Vg1=-2.7V, Vg2=open, Ids=240mA, Ta=25 ° C Z0=50 ohm Parameter Units Min. Frequency Range MHz 0.03 dB 13.5 Gain (Typ/Min) Gain Flatness (Typ/Max) +/- dB Typ. 50,000 15.5 1 Input RL (Typ/Max) dB 12 15 Output RL (Typ/Max) dB 12 15 Output P1dB (Typ/Min) 20GHz 30GHz 40GHz dBm dBm dBm 21 19.5 17.2 22 20.5 18.5 Output IP3 (1) dBm 30 Output Psat (Typ) dBm 25.5 Vdet (VdeR – VdeO) @Po = +20dBm 1GHz 10GHz 20GHz 40GHz V V V V 0.53 0.53 0.54 0.55 Noise Figure 20GHz 40GHz 50GHz dB dB dB 2.8 5.5 9.0 Operating Current at P1dB (Typ/Max) mA 240 ⁰C/W 16 Thermal Resistance Operating Temperature Range -40⁰C Max. +25⁰C (1) Output IP3 is measured with two tones at output power of 10 dBm/tone separated by 20 MHz. Microwave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com MMA-004023D Preliminary data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 2 of 14, Latest Update May 2019 1.2 3.5 6.2 +85⁰C MMA-004023D 30KHz-50GHz Traveling Wave Amplifier With Output Power Detector Preliminary Data Sheet Typical RF Performance: Vds=7V, Vg1=-2.7V, Vg2=open, Ids=240mA, Z0=50 ohm, Ta=25 ºC Typical Room Temperature RF Performance S12(dB) vs. Frequency P-1 and P-3 vs. Frequency Group Delay vs. Frequency Microwave Technology, Inc. an IXYS Company , 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com MMA-004023D Preliminary data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 3 of 14, Latest Update May 2019 MMA-004023D 30KHz-50GHz Traveling Wave Amplifier With Output Power Detector Preliminary Data Sheet Typical RF Performance: 22 DB(|S(2,1)|) MEAS 7V240mA DB(|S(2,1)|) MEAS 6V190mA DB(|S(2,1)|) MEAS 5V180mA 21 20 19 0 DB(|S(2,1)|) MEAS 4V160mA DB(|S(2,1)|) MEAS 3V150mA DB(|S(2,1)|) MEAS 7V170mA -5 17 S11 (dB) S12 (dB) 18 (Over voltage) 16 15 DB(|S(1,1)|) MEAS 7V240mA DB(|S(1,1)|) MEAS 4V160mA DB(|S(1,1)|) MEAS 6V190mA DB(|S(1,1)|) MEAS 3V150mA DB(|S(1,1)|) MEAS 5V180mA DB(|S(1,1)|) MEAS 7V170mA -10 -15 14 13 -20 12 11 -25 10 0 5 10 15 20 25 30 Frequency (GHz) 35 40 45 0 50 5 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 20 25 30 Frequency (GHz) 35 40 45 50 40 45 50 S11 (dB) over biasing 0 -5 S22 (dB) S21 (dB) S21 (dB) over biasing 10 DB(|S(2,1)|) Vg2_2p5V DB(|S(2,1)|) Vg2_1V DB(|S(2,1)|) Vg2_n0p5V DB(|S(2,1)|) Vg2_2V DB(|S(2,1)|) Vg2_0p5V DB(|S(2,1)|) Vg2_n1V DB(|S(2,1)|) Vg2_1p5V DB(|S(2,1)|) Vg2_0V DB(|S(2,1)|) Vg2_n2V DB(|S(2,2)|) MEAS 7V240mA DB(|S(2,2)|) MEAS 4V160mA DB(|S(2,2)|) MEAS 6V190mA DB(|S(2,2)|) MEAS 3V150mA DB(|S(2,2)|) MEAS 5V180mA DB(|S(2,2)|) MEAS 7V170mA -10 -15 DB(|S(2,1)|) Vg2_n2p5V -20 -25 0 5 10 15 20 25 30 Frequency (GHz) 35 40 45 50 Gain control over Vg2 (-2.5V to +2.5V, 0.5V step) 0 5 10 15 20 25 30 Frequency (GHz) 35 S22 (dB) over biasing Vds=7V, Ids=240mA @Vg2=open Microwave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com MMA-004023D Preliminary data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 4 of 14, Latest Update May 2019 MMA-004023D 30KHz-50GHz Traveling Wave Amplifier With Output Power Detector Preliminary Data Sheet Microwave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com MMA-004023D Preliminary data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 5 of 14, Latest Update May 2019 MMA-004023D 30KHz-50GHz Traveling Wave Amplifier With Output Power Detector Preliminary Data Sheet Mechanical Information: Top view Microwave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com MMA-004023D Preliminary data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 6 of 14, Latest Update May2019 MMA-004023D 30KHz-50GHz Traveling Wave Amplifier With Output Power Detector Preliminary Data Sheet Applications The MMA-004023D traveling wave amplifier is designed for use as a general purpose wideband power stage in microwave and optical communication systems, and test fiber optic/microwave test equipments. It is ideally suited for broadband applications requiring a flat gain response and excellent port matches over a 2 to 50 GHz frequency range. Dynamic gain control and low-frequency extension capabilities are designed into these devices. Biasing and Operation The recommended bias conditions for best performance for the MMA-004023D are VDD = 7.0V, IDD = 240mA. To achieve these drain current levels, Vg1 is typically biased -2.7V with approximately 10mA. No other bias supplies or connections to the device are required for 2 to 50 GHz operation. The gate voltage (Vg1) should be applied prior to the drain voltage (Vd1) during power up and removed after the drain voltage during power down. The MMA-004023D is a DC coupled amplifier. External coupling capacitors are needed on RFIN and RFOUT ports. The drain bias pad is connected to RF and must be decoupled to the lowest operating frequency. An auxiliary drain contacts is provided when performance below 1 GHz in required. Connect external capacitors to ground to maintain input and output VSWR at low frequencies (see additional application note). Do not apply bias to these pads. The second gate (Vg2) can be used to obtain 30 dB (typical) dynamic gain control. For normal operation, no external bias is required on this contact. Assembly Techniques GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling, and assembly. MMIC ESD precautions, handling considerations, die attach and bonding methods are critical factors in successful GaAs MMIC performance and reliability. MMA-004023D can be attached using AuSn(Gold/Tin) preform or conductive epoxy. Additional References: MMA-004023D Application note v.1.0 Vd1 10Ω Aux_Vd 15pF 10Ω 460Ω RF OUT 42Ω 1pF 322Ω Vg2 9-identical sections 183Ω 43Ω RF_IN Microwave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com MMA-004023D Preliminary data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 7 of 14, Latest Update May 2019 Vg1 MMA-004023D 30KHz-50GHz Traveling Wave Amplifier With Output Power Detector Preliminary Data Sheet Assembly Diagram for 0.1- 50GHz Applications Using External Bias-Tees at Input and Output with VDD = +7V, 240mA, Vg = -0.5V, 10mA Microwave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com MMA-004023D Preliminary data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 8 of 14, Latest Update May 2019 MMA-004023D 30KHz-50GHz Traveling Wave Amplifier With Output Power Detector Preliminary Data Sheet Broad-band application This section is an operational guide for broad-band applications for MwT’s MMA-004023D Traveling Wave Amplifier (TWA). For operation below 2 GHz, additional passive components are required to extend the low frequency end of the band down to 30 kHz. With low frequency bias components, the MMA-004023D may be used in a variety of timedomain applications through 40 GB/s. Device Operation The MMA-004023D is biased with a single positive drain supply (Vdd) and a negative gate supply (Vg1). For best overall performance, the recommended bias is Vdd = 7 V and Idd = 240 mA. To achieve this drain current level, Vg1 is typically -2.7 V. Typical DC current flow for Vg1 is -10 mA. The MMA-004023D has a second gate bias (Vg2) that may be used for gain control. When not being utilized, Vg2 should be left open circuited. The cascode bias structure of the TWA results in an RF ‘‘hot’’ drain bias that must be isolated from the drain DC supply. This topology creates the need for a decoupling bias network on the drain bias line. Decoupling is the isolation of RF and DC circuits on a common line. The decoupling network is usually a low-pass filter, as shown in Figure 1. Figure 1. Decoupling Network The decoupling bias circuit will pass DC to the drain line of the TWA and prevent the RF signal, present on the drain line, from appearing on the DC bias line. This bias network configuration is also referred to as an RF choke. The corner frequency (low frequency roll-off) of the drain bias RF choke is determined by the parallel combination of the drain inductance and the on-chip 50 Ω resistor shown below in Figure 2. Figure 2. On-chip 50 Ω resistor The lower frequency limit (fLD) due to this inductance can be calculated using the following equation. Where, RO is the RF input/output 50 Ω terminating resistance, and LD is the inductance associated with the off-chip drain bias circuit shown in Figure 1. For 2-40GHz operation, the minimum drain inductance is 4.5 nH. A 0.007 in. diameter gold wire with a length of approximately 0.200’’ will achieve this value. Spiral chip inductors are also available with typical dimensions of Microwave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com MMA-004023D Preliminary data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 9 of 14, Latest Update May 2019 MMA-004023D 30KHz-50GHz Traveling Wave Amplifier With Output Power Detector Preliminary Data Sheet 0.030 x 0.030 x 0.007 in. It is important to note that capacitive parasitics, in the drain bias network will result in resonances in the frequency response of the TWA. Therefore, it is strongly recommended to reduce parasitic capacitance as much as possible. To minimize resonances, an inductor with a high self-resonate frequency is recommended. If a spiral chip inductor is used, a 50 to 200 Ω, parallel de-queuing resistor will also be necessary. A thin film alumina resistor is recommended for minimal associated parasitics. The schematic in Figure 3 illustrates the external bias recommended for basic operation. Input and output RF ports are DC coupled and will require DC blocking capacitors, C1 and C2, if DC is present on these paths. Selection of DC blocks will be dependent on operating frequency bandwidth. See Table 1 for recommended passive components. The schematic in Figure 4 illustrates external bias for utilizing the Vg2 gain control. 240mA MMA-004023D Figure 3. Basic 2 GHz to 50 GHz Schematic Microwave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com MMA-004023D Preliminary data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 10 of 14, Latest Update May 2019 MMA-004023D 30KHz-50GHz Traveling Wave Amplifier With Output Power Detector Preliminary Data Sheet 240mA MMA-004023D Figure 4. Low Frequency Bypass with a Gain control (Vg2) Low Frequency Extension As the area required for capacitive bypass lower than 2 GHz would be quite large, the MMA-004023 provides the Vdd Auxilary (support) bypass pad, shown in Figure 5, to add the additional large capacitance as required. Figure 5. Vdd Auxiliary (support) Bypass Pad The MMA-004023D can operate down to frequencies as low as a few hundred kilohertz by: 1) Adding external capacitors to the auxiliary drain pad. 2) Increasing the capacitance of the DC blocking capacitors at the RF input and output. 3) Increasing the inductance of the drain inductor (L1, Figure 6) to provide high impedance bias feed at the lower frequencies. Microwave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com MMA-004023D Preliminary data sheet is subject to change without notice. All rights reserved © Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 11 of 14, Latest Update May 2019 MMA-004023D 30KHz-50GHz Traveling Wave Amplifier With Output Power Detector Preliminary Data Sheet All three factors are equally important since any one of these can limit the low frequency performance. Input and output return loss degrades as the drain and gate line loads deviate from 50 Ω. The load can be restored close to 50 Ω and RF performance improved by adding large external capacitors in parallel with the on-chip capacitors, as shown in Figure 6. When the additional bypass capacitors are connected, the low frequency limit is extended down to the corner frequency determined by the bypass capacitors, the combination of the on-chip 50Ω load, and the small de-queing resistor. At this lowend band edge, the small signal gain will increase in magnitude and stay at this elevated level down to the point where the CAUX bypass capacitor acts as an open circuit, effectively rolling off the gain completely. The low frequency capacitive extension limit can be approximated from the following equation: Where, RO is the 50 Ω gate or drain line terminating resistor. RDE is the small series (