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Index
1. OVERVIEW ....................................................................................................................................... 3
1.1. GENERAL FEATURES ........................................................................................................................ 3
1.2. APPLICATIONS ................................................................................................................................ 4
2. FUNCTIONAL FEATURES .................................................................................................................. 6
2.1. MODULE BLOCK DIAGRAM ............................................................................................................... 6
2.2. BLOCK FUNCTIONAL FEATURE ........................................................................................................... 7
Microcontroller ............................................................................................................................ 7
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Ultra-Low Power Sensor Controller ............................................................................................ 7
Peripherals ................................................................................................................................... 7
RF Section .................................................................................................................................... 8
3. MODULE OUTLINE ........................................................................................................................... 9
3.1. SIGNAL LAYOUT (TOP VIEW) ............................................................................................................. 9
3.2. PIN DESCRIPTION ......................................................................................................................... 10
4. MODULE SPECIFICATIONS ............................................................................................................. 12
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4.1. ABSOLUTE MAXIMUM RATINGS(1)(2)................................................................................................. 12
4.2. ESD RATINGS .............................................................................................................................. 12
4.3. RECOMMENDED OPERATING CONDITIONS ......................................................................................... 13
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4.4. POWER CONSUMPTION SUMMARY .................................................................................................. 14
4.5. GENERAL CHARACTERISTICS ............................................................................................................ 15
4.6. 125-KBPS CODED (BLUETOOTH 5) – RX.......................................................................................... 15
4.7. 125-KBPS CODED (BLUETOOTH 5) – TX .......................................................................................... 16
4.8. 500-KBPS CODED (BLUETOOTH 5) – RX.......................................................................................... 17
4.9. 500-KBPS CODED (BLUETOOTH 5) – TX .......................................................................................... 18
4.10. 1-MBPS GFSK (BLUETOOTH LOW ENERGY) – RX ............................................................................. 18
4.11. 1-MBPS GFSK (BLUETOOTH LOW ENERGY) – TX ............................................................................. 20
4.12. 2-MBPS GFSK (BLUETOOTH 5) – RX ............................................................................................. 20
4.13. 2-MBPS GFSK (BLUETOOTH 5) – TX ............................................................................................. 21
4.14. INTERNAL 24-MHZ CRYSTAL OSCILLATOR (XOSC_HF)(1) .................................................................. 21
4.15. 32.768-KHZ CRYSTAL OSCILLATOR (XOSC_LF) ............................................................................... 22
4.16. 48-MHZ RC OSCILLATOR (RCOSC_HF) ........................................................................................ 22
4.17. 32-KHZ RC OSCILLATOR (RCOSC_LF) .......................................................................................... 22
4.18. ADC CHARACTERISTICS(1) ............................................................................................................ 23
4.19. TEMPERATURE SENSOR ................................................................................................................ 24
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4.20. BATTERY MONITOR ..................................................................................................................... 25
4.21. CONTINUOUS TIME COMPARATOR ................................................................................................. 25
4.22. LOW-POWER CLOCKED COMPARATOR............................................................................................. 25
4.23. PROGRAMMABLE CURRENT SOURCE .............................................................................................. 26
4.24. DC CHARACTERISTICS .................................................................................................................. 26
4.25. TIMING REQUIREMENTS............................................................................................................... 27
4.26. SWITCHING CHARACTERISTICS ....................................................................................................... 28
4.27. TYPICAL CHARACTERISTICS............................................................................................................ 30
4.28. CHIP ANTENNA CHARACTERISTICS .................................................................................................. 31
5. DESIGN RECOMMENDATIONS ....................................................................................................... 33
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5.1. MODULE LAYOUT RECOMMENDATIONS ............................................................................................ 33
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5.2. REFERENCE SCHEMATIC ................................................................................................................. 35
6. PACKAGE INFORMATION ............................................................................................................... 36
6.1. MODULE MECHANICAL OUTLINE ..................................................................................................... 36
6.2. ORDERING INFORMATION............................................................................................................... 37
6.3. PACKAGE MARKING ...................................................................................................................... 38
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7. SMT AND BAKING RECOMMENDATION ....................................................................................... 40
7.1. BAKING RECOMMENDATION ........................................................................................................... 40
7.2. SMT RECOMMENDATION .............................................................................................................. 40
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8. TAPE REEL INFROMATION ............................................................................................................. 42
8.1. COVER / CARRIER TAPE DIMENSION ................................................................................................. 42
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9. REGULATORY INFORMATION ........................................................................................................ 43
9.1. UNITED STATES ............................................................................................................................ 43
9.2. CANADA ..................................................................................................................................... 44
9.3. EUROPE ...................................................................................................................................... 45
9.4. JAPAN ........................................................................................................................................ 45
9.5. TAIWAN ...................................................................................................................................... 46
9.6. AUSTRALIA/NEW ZEALAND ............................................................................................................ 47
10. HISTORY CHANGE ........................................................................................................................ 48
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DOC No: ZB7412-00A-DTS-R04
1. OVERVIEW
The certified ZB7412-00 module from JORJIN is a wireless MCU module targeting Bluetooth 4.2 and
Bluetooth 5 low energy applications. This module is based on TI CC2640R2F wireless MCU QFN-32
package chip.
The module is a cost-effective, ultralow power, 2.4-GHz RF devices. Very low active RF and MCU
current and low-power mode current consumption provide excellent battery lifetime and allow for
operation on small coin cell batteries and in energy-harvesting applications.
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Make More Flash Available for the Application
No external component required.
Low Power and Wide Supply Voltage Range: 1.8 to 3.8V
- Internal DC-DC converter built-in
2.4-GHz RF Transceiver and Integrated Antenna.
RoHS Compliance
Suitable for Systems Targeting Compliance With Worldwide Radio Frequency Regulations
- ETSI EN 300 328 (Europe)
- FCC CFR47 Part 15 (US)
- IC RSS-247 (Canada)
- ARIB STD-T66 (Japan)
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TI CC2640R2F, 24MHz & 32.768KHz crystals, DC2DC, and chip antenna on a single module.
Built-in TI CC2640R2F 5x5mm RHB VQFN32 (15 GPIOs)
LGA 25pins package.
Dimension 16.9mm(L) x 11mm(W) x 2.45mm(H)
Powerful ARM® Cortex®-M3 Microcontroller
Ultra-Low Power Sensor Controller
Efficient Code Size Architecture, Placing Drivers, TI-RTOS, and Bluetooth® Software in ROM to
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1.1. General Features
- NCC LP0002 (Taiwan)
- AS/NZS 4268 (Australia/New Zealand)
- KN 301 489 (South Korea)
Tools and Development Environment from TI
- Full-Feature and Low-Cost Development Kits
- Packet Sniffer PC Software
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-
Sensor Controller Studio
SmartRF™ Studio
SmartRF Flash Programmer 2
IAR Embedded Workbench® for ARM
Code Composer Studio™
1.2. Applications
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Retail
- Beacons
- Advertising
- ESL and Price Tags
- Point of Sales and Payment Systems
Health and Medical
- Thermometers
- Blood Glucose and Pressure Meters
- Weight Scales
- Hearing Aids
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- Lighting
- Locks
- Gateways
- Security Systems
Industrial
- Logistics
- Production and Manufacturing Automation
- Asset Tracking and Management
- HMI and Remote Display
- Access Control
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Home and Building Automation
- Connected Appliances
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Sports and Fitness
- Activity Monitors and Fitness Trackers
- Heart Rate Monitors
- Running and Biking Sensors
- Sports Watches
- Gym Equipment
- Team Sports Equipment
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HID
Voice Remote Controls
Gaming
Keyboards and Mice
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2. FUNCTIONAL FEATURES
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GPIOs
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2.1. Module Block Diagram
ZB7412-00 module
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2.2. Block Functional Feature
Microcontroller
Powerful ARM® Cortex®-M3
EEMBC CoreMark® score: 142
Up to 48-MHz Clock Speed
275KB of Nonvolatile Memory Including 128KB of In-System Programmable Flash
Up to 28KB of System SRAM, of Which 20KB is Ultra-Low Leakage SRAM
8-KB SRAM for Cache or System RAM Use
2-Pin cJTAG and JTAG Debugging
Supports Over-The-Air Upgrade (OTA)
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Can run autonomous from the rest of the system
16-Bit Architecture
2-KB Ultra-Low Leakage SRAM for Code and Data
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Peripherals
All Digital Peripheral Pins can be routed to any GPIO.
15 GPIOs
4 General-Purpose Timer Modules (Eight 16-Bit or Four 32-Bit Timer, PWM Each)
12-Bit ADC, 200-ksamples/s, 8-Channel Analog MUX
Continuous Time Comparator
Ultra-Low Power Analog Comparator
Programmable Current Source
UART
2x SSI (SPI, MICROWIRE, TI)
I2C
I2S
Real-Time Clock (RTC)
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AES-128 Security Module
True Random Number Generator (TRNG)
Support for 8 Capacitive Sensing Buttons
Integrated Temperature Sensor
RF Section
2.4 GHz RF Transceiver Compatible With Bluetooth Low Energy (BLE) 4.2 and 5
specifications
Excellent Receiver Sensitivity (–96 dBm for BLE), Selectivity, and Blocking Performance
Link budget of 101 dB for BLE.
Programmable Output Power up to +5 dBm
Integrated Antenna
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Pre-certified for Compliance With Worldwide Radio Frequency Regulations
ETSI (Europe)
IC (Canada)
FCC (USA)
ARIB STD-T66 (Japan)
-
NCC (Taiwan)
RCM (Australia and New Zealand)
KC (South Korea)
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DOC No: ZB7412-00A-DTS-R04
3. MODULE OUTLINE
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3.1. Signal Layout (Top View)
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3.2. Pin Description
Table 3-1. Pin Description
Pin
No.
Pin Name
Type
Description
1
GND
2
NC
3
GND
4
DIO_0
Digital I/O
GPIO, Sensor Controller
5
DIO_1
Digital I/O
GPIO, Sensor Controller
6
DIO_2
Digital I/O
GPIO, Sensor Controller, High drive capability
7
DIO_3
Digital I/O
GPIO, Sensor Controller, High drive capability
8
DIO_4
Digital I/O
9
JTAG_TMSC
Digital I/O
10
JTAG_TCKC
Digital I/O
11
DIO_5
Digital I/O
12
DIO_6
Digital I/O
13
RESET_N
14
DIO_7
Digital/Analog I/O
GPIO, Sensor Controller, Analog
15
DIO_8
Digital/Analog I/O
GPIO, Sensor Controller, Analog
GND
NC
GND
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GND
17
DIO_10
GPIO, Sensor Controller, High drive capability
JTAG_TMSC, High drive capability
JTAG_TCKC
GPIO, High drive capability, JTAG_TDO
GPIO, High drive capability, JTAG_TDI
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Digital Input
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DIO_9
No connection. For internal test only.
Digital/Analog I/O
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16
GND
Reset, active-low. No internal pullup. Built-in 0.1uF
capacitor to GND.
GPIO, Sensor Controller, Analog. In -04 module,
DIO_9 pin is connected to CS# pin of internal serial
SPI Flash.
GPIO, Sensor Controller, Analog. In -04 module,
Digital/Analog I/O
DIO_10 pin is connected to SCLK pin of internal serial
SPI Flash.
GPIO, Sensor Controller, Analog. In -04 module,
18
DIO_11
Digital/Analog I/O
DIO_11 pin is connected to SI pin of internal serial SPI
Flash.
GPIO, Sensor Controller, Analog. In -04 module,
19
DIO_12
Digital/Analog I/O
DIO_12 pin is connected to SO pin of internal Serial
SPI Flash.
20
DIO_13
Digital/Analog I/O
GPIO, Sensor Controller, Analog
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21
DIO_14
Digital/Analog I/O
22
VDDS
Power
1.8 V to 3.8 V main chip and DC/DC supply
23
VDDS2
Power
1.8 V to 3.8 V GPIO supply
24
NC
25
GND
GND
Ground
G1~G4
GND
GND
Ground
No connection.
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NC
GPIO, Sensor Controller, Analog
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DOC No: ZB7412-00A-DTS-R04
4. MODULE SPECIFICATIONS
4.1. Absolute Maximum Ratings(1)(2)
over operating free-air temperature range (unless otherwise noted)
Parameter
Conditions
MIN
MAX
Unit
Supply voltage, VDDS(3)
-0.3
4.1
V
Voltage on any digital pin(4)
-0.3
VDDS+0.3
V
Max 4.1
-0.3
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Voltage scaling enabled
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Voltage on ADC input (Vin)
VDDS
V
Internal reference, voltage scaling disabled
-0.3
1.49
V
VDDS as reference, voltage scaling disabled
-0.3
VDDS/2.9
V
+5
dBm
+85
°C
Input RF level
Storage temperature range
-40
(1) All voltage values are with respect to ground, unless otherwise noted.
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(2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These
are stress ratings only, and functional operation of the device at these or any other conditions beyond those
indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated
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conditions for extended periods may affect device reliability.
(3) VDDS2 must be at the same potential as VDDS.
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(4) Including analog capable DIO.
4.2. ESD Ratings
Parameter
Electrostatic
Human Body Model (HBM), per ANSI/ESDA/JEDEC
discharge
JS001(1)
performance (VESD)
Charged Device Model (CDM), per JESD22-C101(2)
Value
Unit
All pins
±2500
V
RF pins
±750
V
Non-RF pins
±750
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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4.3. Recommended Operating Conditions
Parameter
Conditions
Ambient temperature range
Operating supply voltage (VDDS)
For operation in battery-powered and
MIN
MAX
Unit
-40
85
°C
1.8
3.8
V
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3.3 V systems
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DOC No: ZB7412-00A-DTS-R04
4.4. Power Consumption Summary
Tc = 25°C, VDDS = 3.0 V with internal DC-DC converter, unless otherwise noted.
Test Conditions
Parameter
Min
Typ
Reset. RESET_N pin asserted or VDDS below
Max
Units
100
nA
Shutdown. No clocks running, no retention
150
nA
Standby. With RTC, CPU, RAM and (partial)
1.1
μA
1.3
μA
Power-on-Reset threshold
register retention. RCOSC_LF
Standby. With RTC, CPU, RAM and (partial)
Core current
Standby. With Cache, RTC, CPU, RAM and
consumption
(partial) register retention. RCOSC_LF
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register retention. XOSC_LF
Standby. With Cache, RTC, CPU, RAM and
2.8
μA
3.0
μA
550
μA
(partial) register retention. XOSC_LF
Idle. Supply Systems and RAM powered.
Active. Core running CoreMark
1.45mA +
Radio RX
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31uA/MHz
6.2
Radio TX, 0 dBm output power
6.8
Radio TX, 5 dBm output power
9.4
mA
mA
Peripheral
Delta current with domain enabled
Serial power
RF Core
Iperi
(1)
20
μA
Delta current with domain enabled
13
μA
Delta current with power domain enabled,
237
μA
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power domain
domain
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Peripheral Current Consumption (Adds to core current Icore for each peripheral unit activated)(1)
clock enabled, RF Core Idle
μDMA
Delta current with clock enabled, module idle
130
μA
Timers
Delta current with clock enabled, module idle
113
μA
I2C
Delta current with clock enabled, module idle
12
μA
I2S
Delta current with clock enabled, module idle
36
μA
SSI
Delta current with clock enabled, module idle
93
μA
UART
Delta current with clock enabled, module idle
164
μA
Iperi is not supported in standby or shutdown modes.
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4.5. General Characteristics
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
Test Conditions
Parameter
Min
Typ
Max
Units
FLASH MEMORY
Supported flash erase cycles
100
K
before failure
Cycles
Flash page/sector erase current
Flash page/sector erase time
Average delta current
(1)
Average delta current, 4 bytes at a time
Flash write time(1)
4 bytes at a time
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Flash write current
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Flash page/sector size
Flash page/sector erase time(1)
12.6
mA
8
ms
4
KB
8.15
mA
8
μs
8
ms
(1) This number is dependent on Flash aging and will increase over time and erase cycles
4.6. 125-kbps Coded (Bluetooth 5) – RX
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RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS
= 3.0 V, fRF = 2440 MHz, unless otherwise noted.
Test Conditions
Parameter
BER = 10–3
Receiver saturation
tolerance
-102
dBm
>5
dBm
kHz
Difference between incoming data rate and the
-260
260
ppm
-140
150
ppm
and the internally generated carrier frequency
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Data rate error
Units
310
–3
Difference between the incoming carrier frequency
tolerance
Max
-260
BER = 10
Frequency error
Typ
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Receiver sensitivity
Min
internally generated data rate (37-byte packets)
Data rate error
Difference between incoming data rate and the
tolerance
Co-channel rejection
internally generated data rate (255-byte packets)
(1)
Wanted signal at –79 dBm, modulated interferer in
-3
dB
9 / 5(2)
dB
43/32(2)
dB
47/42(2)
dB
channel, BER = 10–3
Selectivity, ±1 MHz(1)
Wanted signal at –79 dBm, modulated interferer at
±1 MHz, BER = 10–3
Selectivity, ±2 MHz(1)
Wanted signal at –79 dBm, modulated interferer at
±2 MHz, BER = 10–3
Selectivity, ±3 MHz(1)
Wanted signal at –79 dBm, modulated interferer at
±3 MHz, BER = 10
–3
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Selectivity, ±4 MHz(1)
Wanted signal at –79 dBm, modulated interferer at
46/47(2)
dB
49/46(2)
dB
50/47(2)
dB
32
dB
5/32(2)
dB
±4 MHz, BER = 10–3
Selectivity, ±6 MHz(1)
Wanted signal at –79 dBm, modulated interferer at
±6 MHz, BER = 10–3
Alternate channel
Wanted signal at –79 dBm, modulated interferer at
rejection, ±7 MHz(1)
≥ ±7 MHz, BER = 10–3
Selectivity, Image
Wanted signal at -79 dBm, modulated interferer at
frequency
(1)
–3
image frequency, BER = 10
Selectivity, Image
Note that Image frequency +1 MHz is the
frequency ±1 MHz
(1)
Co-channel -1 MHz. Wanted signal at –79 dBm,
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modulated interferer at ±1 MHz from image
Blocker rejection, ±8
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frequency, BER = 10–3
Wanted signal at -79 dBm, modulated interferer at
>46
–3
±8 MHz and above, BER = 10
Out-of-band blocking(3)
30 MHz to 2000 MHz
Out-of-band blocking
2003 MHz to 2399 MHz
Out-of-band blocking
2484 MHz to 2997 MHz
Intermodulation
Wanted signal at 2402 MHz, -76 dBm. Two
-40
dBm
-19
dBm
-22
dBm
-42
dBm
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MHz and above
(1)
interferers at 2405 and 2408 MHz respectively, at
the given power level
(1) Numbers given as I/C dB
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(2) X / Y, where X is +N MHz and Y is –N MHz
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(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification
4.7. 125-kbps Coded (Bluetooth 5) – TX
RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS
= 3.0 V, fRF = 2440 MHz, unless otherwise noted.
Parameter
Test Conditions
Min
Typ
Max
Units
3.2
4.8
5.6
dBm
Output power, highest setting
Delivered to a single-ended 50-Ω load
Output power, lowest setting
Delivered to a single-ended 50-Ω load
-21
dBm
Spurious emission conducted
f < 1 GHz, outside restricted bands
-43
dBm
measurement(1)
f < 1 GHz, restricted bands ETSI
-65
dBm
f < 1 GHz, restricted bands FCC
-76
dBm
f > 1 GHz, including harmonics
-46
dBm
(1)
Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN
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300 440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
4.8. 500-kbps Coded (Bluetooth 5) – RX
RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS
= 3.0 V, fRF = 2440 MHz, unless otherwise noted.
Test Conditions
Parameter
Min
Typ
Max
Units
Receiver sensitivity
BER = 10–3
-101
dBm
Receiver saturation
BER = 10–3
>5
dBm
Frequency error
Difference between the incoming carrier frequency
tolerance
and the internally generated carrier frequency
Data rate error
Difference between incoming data rate and the
tolerance
internally generated data rate (37-byte packets)
Data rate error
Difference between incoming data rate and the
tolerance
internally generated data rate (255-byte packets)
Co-channel rejection(1)
Wanted signal at -72 dBm, modulated interferer in
Wanted signal at -72 dBm, modulated interferer at
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Selectivity, ±1 MHz(1)
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-500
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channel, BER = 10–3
-240
-310
240
kHz
500
ppm
330
ppm
-5
dB
9 / 5(2)
dB
41/31(2)
dB
44/41(2)
dB
44/44(2)
dB
44/44(2)
dB
44/44(2)
dB
31
dB
5/41(2)
dB
±1 MHz, BER = 10–3
Selectivity, ±2 MHz(1)
Wanted signal at -72 dBm, modulated interferer at
±2 MHz, BER = 10–3
Wanted signal at -72 dBm, modulated interferer at
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Selectivity, ±3 MHz(1)
±3 MHz, BER = 10–3
Wanted signal at -72 dBm, modulated interferer at
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Selectivity, ±4 MHz(1)
±4 MHz, BER = 10–3
Selectivity, ±6 MHz(1)
Wanted signal at -72 dBm, modulated interferer at
±6 MHz, BER = 10
Alternate channel
rejection, ±7 MHz
Wanted signal at -72 dBm, modulated interferer at
(1)
≥ ±7 MHz, BER = 10
Selectivity, Image
frequency
–3
Wanted signal at -72 dBm, modulated interferer at
(1)
–3
image frequency, BER = 10
Selectivity, Image
frequency ±1 MHz
–3
Note that Image frequency +1 MHz is the
(1)
Co-channel -1 MHz. Wanted signal at -72 dBm,
modulated interferer at ±1 MHz from image
frequency, BER = 10–3
Blocker rejection, ±8
Wanted signal at -72 dBm, modulated interferer at
44
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DOC No: ZB7412-00A-DTS-R04
MHz and above(1)
±8 MHz and above, BER = 10–3
Out-of-band blocking(3)
30 MHz to 2000 MHz
--35
dBm
Out-of-band blocking
2003 MHz to 2399 MHz
-19
dBm
Out-of-band blocking
2484 MHz to 2997 MHz
-19
dBm
Intermodulation
Wanted signal at 2402 MHz, -69 dBm. Two
-37
dBm
interferers at 2405 and 2408 MHz respectively, at
the given power level
(1) Numbers given as I/C dB
(2) X / Y, where X is +N MHz and Y is –N MHz
FI
D
EN
TI
A
4.9. 500-kbps Coded (Bluetooth 5) – TX
L
(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification
RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS
= 3.0 V, fRF = 2440 MHz, unless otherwise noted.
Test Conditions
Parameter
Output power, highest setting
Delivered to a single-ended 50-Ω load
Output power, lowest setting
Delivered to a single-ended 50-Ω load
Spurious emission conducted
Typ
Max
Units
3.2
4.8
5.6
dBm
dBm
f < 1 GHz, outside restricted bands
-43
dBm
f < 1 GHz, restricted bands ETSI
-65
dBm
f < 1 GHz, restricted bands FCC
-76
dBm
f > 1 GHz, including harmonics
-46
dBm
CO
N
-21
RJ
IN
measurement
(1)
Min
(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300
JO
440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
4.10. 1-Mbps GFSK (Bluetooth Low Energy) – RX
RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS
= 3.0 V, fRF = 2440 MHz, unless otherwise noted.
Test Conditions
Parameter
Min
Typ
Max
Units
Receiver sensitivity
BER = 10–3
-96
dBm
Receiver saturation
BER = 10–3
4
dBm
Frequency error
Difference between the incoming carrier frequency
tolerance
and the internally generated carrier frequency
Data rate error
Difference between incoming data rate and the
tolerance
internally generated data rate
-350
350
kHz
-750
750
ppm
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DOC No: ZB7412-00A-DTS-R04
Co-channel rejection(1)
Wanted signal at –67 dBm, modulated interferer in
-6
dB
7 / 3(2)
dB
34/25(2)
dB
38/26(2)
dB
42/29(2)
dB
32
dB
25
dB
3/26(2)
dB
-20
dBm
-5
dBm
channel, BER = 10–3
Selectivity, ±1 MHz(1)
Wanted signal at –67 dBm, modulated interferer at
±1 MHz, BER = 10–3
Selectivity, ±2 MHz(1)
Wanted signal at –67 dBm, modulated interferer at
±2 MHz, BER = 10–3
Wanted signal at –67 dBm, modulated interferer at
±3 MHz, BER = 10
Selectivity, ±4 MHz(1)
Wanted signal at –67 dBm, modulated interferer at
±4 MHz, BER = 10
Selectivity, ±5 MHz or
(1)
–3
–3
Wanted signal at –67 dBm, modulated interferer at
L
Selectivity, ±3 MHz(1)
–3
≥ ±5 MHz, BER = 10
Selectivity, Image
Wanted signal at –67 dBm, modulated interferer at
frequency(1)
image frequency, BER = 10–3
Selectivity, Image
Wanted signal at –67 dBm, modulated interferer at
frequency ±1 MHz (1)
±1 MHz from image frequency, BER = 10–3
Out-of-band blocking(3)
30 MHz to 2000 MHz
Out-of-band blocking
2003 MHz to 2399 MHz
Out-of-band blocking
2484 MHz to 2997 MHz
-8
dBm
Out-of-band blocking
3000 MHz to 12.75 GHz
-8
dBm
Intermodulation
Wanted signal at 2402 MHz, –64 dBm. Two
-34
dBm
-71
dBm
-62
dBm
RSSI dynamic range
70
dB
RSSI accuracy
±4
dB
CO
N
FI
D
EN
TI
A
more
RJ
IN
interferers at 2405 and 2408 MHz respectively, at
the given power level
30 to 1000 MHz
Conducted measurement in a 50-Ω single-ended
JO
Spurious emissions,
load. Suitable for systems targeting compliance
with EN 300 328, EN 300 440 class 2, FCC CFR47,
Part 15 and ARIB STD-T-66
Spurious emissions,
Conducted measurement in a 50-Ω single-ended
1 to 12.75 GHz
load. Suitable for systems targeting compliance
with EN 300 328, EN 300 440 class 2, FCC CFR47,
Part 15 and ARIB STD-T-66
(1) Numbers given as I/C dB
(2) X / Y, where X is +N MHz and Y is –N MHz
(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification
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DOC No: ZB7412-00A-DTS-R04
4.11. 1-Mbps GFSK (Bluetooth Low Energy) – TX
RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS
= 3.0 V, fRF = 2440 MHz, unless otherwise noted.
Test Conditions
Parameter
Min
Typ
Max
Units
3.2
4.8
5.6
dBm
Output power, highest setting
Delivered to a single-ended 50-Ω load
Output power, lowest setting
Delivered to a single-ended 50-Ω load
-21
dBm
Spurious emission conducted
f < 1 GHz, outside restricted bands
-43
dBm
f < 1 GHz, restricted bands ETSI
-65
dBm
f < 1 GHz, restricted bands FCC
-76
dBm
f > 1 GHz, including harmonics
-46
dBm
L
measurement
(1)
FI
D
EN
TI
A
(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300
440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
4.12. 2-Mbps GFSK (Bluetooth 5) – RX
RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS
CO
N
= 3.0 V, fRF = 2440 MHz, unless otherwise noted.
Test Conditions
Receiver sensitivity
BER = 10–3
Receiver saturation
BER = 10–3
Frequency error
RJ
IN
Parameter
Difference between the incoming carrier frequency
tolerance
Typ
Max
Units
-92
dBm
4
dBm
-300
500
kHz
-1000
1000
ppm
and the internally generated carrier frequency
Difference between incoming data rate and the
JO
Data rate error
tolerance
Min
internally generated data rate
Co-channel rejection
(1)
Wanted signal at –67 dBm, modulated interferer in
-7
dB
8/4(2)
dB
31/26(2)
dB
37/38(2)
dB
37/36(2)
dB
4
dB
channel, BER = 10–3
Selectivity, ±2 MHz(1)
Wanted signal at –67 dBm, modulated interferer at
±2 MHz, BER = 10–3
Selectivity, ±4 MHz(1)
Wanted signal at –67 dBm, modulated interferer at
±4 MHz, BER = 10
Selectivity, ±6 MHz(1)
Wanted signal at –67 dBm, modulated interferer at
±6 MHz, BER = 10
Alternate channel
rejection, ±7 MHz
Selectivity, Image
–3
–3
Wanted signal at –67 dBm, modulated interferer at
(1)
≥ ±7 MHz, BER = 10
–3
Wanted signal at –67 dBm, modulated interferer at
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DOC No: ZB7412-00A-DTS-R04
frequency(1)
image frequency, BER = 10–3
Selectivity, Image
Note that Image frequency +2 MHz is the
frequency ±2 MHz
(1)
3/26(2)
dB
Co-channel. Wanted signal at -67 dBm, modulated
interferer at ±2 MHz from image frequency, BER =
10–3
Out-of-band blocking(3)
30 MHz to 2000 MHz
-33
dBm
Out-of-band blocking
2003 MHz to 2399 MHz
15
dBm
Out-of-band blocking
2484 MHz to 2997 MHz
-12
dBm
Out-of-band blocking
3000 MHz to 12.75 GHz
-10
dBm
Intermodulation
Wanted signal at 2402 MHz, –64 dBm. Two
-34
dBm
L
interferers at 2405 and 2408 MHz respectively, at
(1) Numbers given as I/C dB
(2) X / Y, where X is +N MHz and Y is –N MHz
FI
D
EN
TI
A
the given power level
(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification
CO
N
4.13. 2-Mbps GFSK (Bluetooth 5) – TX
RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS
= 3.0 V, fRF = 2440 MHz, unless otherwise noted.
Test Conditions
Parameter
Delivered to a single-ended 50-Ω load
Output power, lowest setting
Delivered to a single-ended 50-Ω load
Error vector magnitude
At maximum output power
JO
RJ
IN
Output power, highest setting
Min
Typ
Max
Units
3.2
4.8
5.6
dBm
-21
dBm
2
%
Spurious emission conducted
f < 1 GHz, outside restricted bands
-43
dBm
measurement (1)
f < 1 GHz, restricted bands ETSI
-65
dBm
f < 1 GHz, restricted bands FCC
-76
dBm
f > 1 GHz, including harmonics
-46
dBm
(1)
Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN
300 440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
4.14. Internal 24-MHz Crystal Oscillator (XOSC_HF)(1)
over operating free-air temperature range (unless otherwise noted)
Parameter
Crystal frequency
Test Conditions
Min
Typ
24
Max
Units
MHz
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DOC No: ZB7412-00A-DTS-R04
Crystal frequency tolerance(2)
-40
+40
Start-up time(3)
150
ppm
μs
(1) Probing or otherwise stopping the XTAL while the DC-DC converter is enabled may cause permanent damage to the
device.
(2) Includes initial tolerance of the crystal, drift over temperature, aging and frequency pulling due to incorrect load
capacitance. As per Bluetooth specification
(3) Kick-started based on a temperature and aging compensated RCOSC_HF using precharge injection
4.15. 32.768-kHz Crystal Oscillator (XOSC_LF)
Test Conditions
Crystal frequency
Min
Typ
Max
FI
D
EN
TI
A
Parameter
L
over operating free-air temperature range (unless otherwise noted)
Units
32.768
Initial crystal frequency tolerance, Bluetooth
low energy applications
Crystal aging
Tc = 25°C
KHz
-20
20
ppm
-3
3
ppm/year
CO
N
4.16. 48-MHz RC Oscillator (RCOSC_HF)
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
Test Conditions
Min
RJ
IN
Parameter
Max
Units
48
MHz
Uncalibrated frequency accuracy
±1
%
Calibrated frequency accuracy(1)
±0.25
%
5
μs
Start-up time
JO
Frequency
Typ
(1) Accuracy relatively to the calibration source (XOSC_HF).
4.17. 32-kHz RC Oscillator (RCOSC_LF)
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
Parameter
Calibrated frequency
Temperature coefficient
Test Conditions
Min
Typ
Max
Units
32.8
KHz
50
ppm/°C
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DOC No: ZB7412-00A-DTS-R04
4.18. ADC Characteristics(1)
Tc = 25°C, VDDS = 3.0 V and voltage scaling enabled, unless otherwise noted.
Test Conditions
Parameter
Min
Input voltage range
Typ
0
Resolution
Max
Units
VDDS
V
12
Sample rate
Bits
200
Internal 4.3-V equivalent reference(2)
Offset
Gain error
Internal 4.3-V equivalent reference
(2)
DNL(3) -
ksps
2
LSB
2.4
LSB
>-1
LSB
±3
LSB
9.8
Bits
10
Bits
11.1
Bits
-65
dB
-69
dB
-71
dB
60
dB
INL Integral nonlinearity
FI
D
EN
TI
A
L
Differential nonlinearity
ENOB -
Internal 4.3-V equivalent reference(2), 200 ksps,
Effective number of bits
9.6-kHz input tone
VDDS as reference, 200 ksps, 9.6-kHz input tone
Internal 1.44-V reference, voltage scaling disabled,
CO
N
32 samples average, 200 ksps, 300-Hz input tone
THD -
Internal 4.3-V equivalent reference(2),
Total harmonic
9.6-kHz input tone
distortion
VDDS as reference, 200 ksps, 9.6-kHz input tone
RJ
IN
200 ksps,
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
Internal 4.3-V equivalent reference(2), 200 ksps,
JO
SINAD / SNDR Signal-to-noise and
9.6-kHz input tone
distortion ratio
VDDS as reference, 200 ksps, 9.6-kHz input tone
63
dB
Internal 1.44-V reference, voltage scaling disabled,
69
dB
67
dB
32 samples average, 200 ksps, 300-Hz input tone
SFDR –
Internal 4.3-V equivalent reference(2), 200 ksps,
Spurious-free dynamic
9.6-kHz input tone
range
VDDS as reference, 200 ksps, 9.6-kHz input tone
72
dB
Internal 1.44-V reference, voltage scaling disabled,
73
dB
50
Clock
32 samples average, 200 ksps, 300-Hz input tone
Conversion time
Serial conversion, time-to-output, 24-MHz clock
cycles
Current consumption
Internal 4.3-V equivalent reference(2)
0.66
mA
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DOC No: ZB7412-00A-DTS-R04
Current consumption
VDDS as reference
0.75
mA
Reference voltage
Equivalent fixed internal reference (input voltage
4.3
V
scaling enabled). For best accuracy, the ADC
(2)(4)
conversion should be initiated through the
TI-RTOS™ API to include the gain or offset
compensation factors stored in FCFG1.
Reference voltage
Fixed internal reference (input voltage scaling
1.48
V
VDDS
V
VDDS/
V
disabled). For best accuracy, the ADC conversion
should be initiated through the TI-RTOS API to
include the gain or offset compensation factors
/ 4095
Reference voltage
FI
D
EN
TI
A
scaled value (4.3 V) as follows: Vref = 4.3 V × 1408
L
stored in FCFG1. This value is derived from the
VDDS as reference (Also known as RELATIVE) (input
voltage scaling enabled)
Reference voltage
VDDS as reference (Also known as RELATIVE) (input
voltage scaling disabled)
Input Impedance
200 ksps, voltage scaling enabled. Capacitive input,
2.82(4)
>1
MΩ
CO
N
Input impedance depends on sampling frequency
and sampling time
(1) Using IEEE Std 1241™-2010 for terminology and test methods.
RJ
IN
(2) Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3 V.
(3) No missing codes. Positive DNL typically varies from +0.3 to +3.5, depending on device
JO
(4) Applied voltage must be within absolute maximum ratings (Section 4.1) at all times.
4.19. Temperature Sensor
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
Parameter
Test Conditions
Min
Resolution
Range
Typ
Max
4
-40
Units
°C
+85
°C
Accuracy
±5
°C
Supply voltage coefficient(1)
3.2
°C/V
(1) Automatically compensated when using supplied driver libraries.
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DOC No: ZB7412-00A-DTS-R04
4.20. Battery Monitor
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
Test Conditions
Parameter
Min
Typ
Resolution
Max
50
Range
Units
mV
1.8
3.8
Accuracy
V
mV
13
4.21. Continuous Time Comparator
L
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
Test Conditions
Min
Typ
Max
Units
0
VDDS
V
0
VDDS
V
FI
D
EN
TI
A
Parameter
Input voltage range
External reference voltage
Internal reference voltage
DCOUPL as reference
Offset
Hysteresis
Step from –10 mV to +10 mV
Current consumption when enabled(1)
CO
N
Decision time
1.27
V
3
mV
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