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MMA-445933H-M5

MMA-445933H-M5

  • 厂商:

    MWT

  • 封装:

    SMD6_EP

  • 描述:

    射频放大器 IC 4.4GHz ~ 5.9GHz

  • 详情介绍
  • 数据手册
  • 价格&库存
MMA-445933H-M5 数据手册
MMA-445933H-M5 4.4 – 5.9 GHzz 2W High Efficiency Linear Power Amplifier Fe eatures:: • • • • • • • 31 dB Gain 33 dBm m P-1dB OIP3 45 5 dBm 25.0 dBm Linear Po out @ 2.5% EVM E (802.11 64QAM) 6 Fully Matched M Input and Outputt for Easy Ca ascade Internal Bias Tee Surface Mount, RoHS Compliant QFN 5x5mm Package escriptio on: De The e MMA-445933H-M5 is a power amplifie er with the Sta ate-of-the-Artt linear power between 4.4 GHz and d 5.9 GHz fre equency band d. Based on advanced robu ust HFET devvice technolog gy, the lineariity of this pow wer am mplifier is 25 dBm linear power at 2.5% EVM and achieves an ACP PR better than -36 dBc. The modulation test patttern is 802.16x 64QAM. This T linear pow wer amplifier also has high h gain. Ideal a applications in nclude the driver and the e output powe er stage of WiMax and WLA AN infrastruc ctures and acccess points. Itt also can be used for PTP P (PointTo--Point) radio applications for f this band. Ty ypical RF R Performance: Vd1= 7.5V, Vd2= 7.5V, Vg1= -0.8V, Vg2= -0.8V, Idq1=410mA =25 ºC, Z0=5 50 ohm Idq2=622 mA, Ta= Units s T Typical Data a MHz 4400-5900 dB 31 +/-dB B 2.5 In put Return Loss (Typ) dB 10 Ou utput Returrn Loss (Typ) dB 10 Ou utput P1dB (Typ) dBm 33 OI IP3 (Typ) dBm 45 Po out @ 2.5% EVM (Typ) dBm 25.0 Op perating Cu urrent Range mA 1050 Th hermal Res sistance (D Driver Stage e) °C /W W 20 Th hermal Res sistance (O Output Stag ge) °C /W W 16 Pa arameter Fre equency Range R Ga ain (Typ) Ga ain Flatness (Typ) Updated 08/2019 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-400 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © Please visit MwT website for information on MwT MMIC products. Page 1 of 8 MMA-44 45933H-M5 4..4 – 5.9 GHzz 2W High Efficiency Linear Power Amplifier Ty ypical RF R Performance: Vd1=7.5V, Vd2=7.5V, Vg1=-0.8, Vg2=-0.8V, Idq1=410mAA, Idq q2=620mA, Z0=50 Z ohm, Ta=25 T ºC Updated 08/2019 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-400 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © Please visit MwT website for information on MwT MMIC products. Page 2 of 8 MMA-44 45933H-M5 4..4 – 5.9 GHzz 2W High Efficiency Linear Power Amplifier M Maximum m Rating gs: (Ta= 25 5 °C)* SY YMBOL PARAMETER P RS Vdd1 Drain-Source Voltage Driver D Stage Vdd2 Drain-Sourrce Voltage Output O Stage Vgg1 Gate-Source Voltage Driver D Stage Vgg2 Gate-Sourrce Voltage Output O Stage Idq1 Drain Current Drive er Stage Idq2 Drain Current C Outpu ut Stage Ig g1 and Ig2 Gate Curren nt Ip Pinch-Off Currrent Pdiss DC Power Dissip pation Pin max RF R Input Pow wer UNITS V V V V mA mA mA mA W dBm A ABSOLUTE M MAXIMUM 10 10 -5 -5 500 0 750 0 10 10 9.0 0 +10 0 Toper Operating Temperature ºC -40 to +85 Tch Cha annel Temperrature ºC 17 5 Tstg Storage Temperature ºC -55 to 150 *Op peration of this de evice above any one of these parameters may ca ause permanent damage. Updated 08/2019 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-400 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © Please visit MwT website for information on MwT MMIC products. Page 3 of 8 MMA-44 45933H-M5 4..4 – 5.9 GHzz 2W High Efficiency Linear Power Amplifier Small Signal Gain and S-Parameters S11, S22, S21 Updated 08/2019 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-400 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © Please visit MwT website for information on MwT MMIC products. Page 4 of 8 MMA-44 45933H-M5 4..4 – 5.9 GHzz 2W High Efficiency Linear Power Amplifier Mechanic cal Information: Pin Configurations: Updated 08/2019 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-400 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © Please visit MwT website for information on MwT MMIC products. Page 5 of 8 MMA-44 45933H-M5 4..4 – 5.9 GHzz 2W High Efficiency Linear Power Amplifier Mechanic cal Information: Updated 08/2019 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-400 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © Please visit MwT website for information on MwT MMIC products. Page 6 of 8 MMA-44 45933H-M5 4..4 – 5.9 GHzz 2W High Efficiency Linear Power Amplifier App plication N Note The evaluation e boa ard, shown in n Figure 1, is ffabricated witth Rogers’s 4003 matterial, 20 mil tthick, 2 oz co opper weight a and includ des four DC in nput connecti ons and two RF lines. The e MMA-445933H-M5 shown in the oard is a 2 wa e center of bo att high a high linea arity amplifier . The MMA-445933H-M5 iis a 3 gain and stage amplifier asssembly die atttach to the modified ‘02’ pa ackage which h includes fou ur bias entriess and two RF connections. The bias tees are built--in to the packkage. Small vvalue bypassing capac citors are inclu uded with asssembly. Prop per bypassing g is still requirred on the DC C lines. The a amplifier operrates over a Figurre 1 Evaluation n board tempe erature range e of approxima ately 85°C. The PCB P requires via holes with h a diameter of 20 mils pla aced uniforrmly over the center pad fo or thermal reliief and RF gro ound as shown n in Figure 2. The via hole es can be bacck filled with cond uctive u epoxy ffor best thermmal performance. ayout Figure 2 Hole La Updated 08/2019 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-400 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © Please visit MwT website for information on MwT MMIC products. Page 7 of 8 MMA-44 45933H-M5 4..4 – 5.9 GHzz 2W High Efficiency Linear Power Amplifier Diagram: Updated 08/2019 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-400 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © Please visit MwT website for information on MwT MMIC products. Page 8 of 8
MMA-445933H-M5
物料型号:MA-445933H-M5

器件简介: - 该功率放大器工作在4.4至5.9 GHz频率范围内,适用于802.11ac 6x 64QAM等应用。 - 基于先进的高鲁棒性HFET技术,具有33 dBm的输出功率和25 dBm的2.5% EVM线性功率。 - 该放大器具有31 dB的增益和优于-36 dBc的ACPR(邻道功率比)。

引脚分配: - 引脚4和5为RFin(射频输入)。 - 引脚20和21为RFout(射频输出)。 - 引脚30和29为Vgs1a和Vgs1b(驱动级栅极电压)。 - 引脚27为Vgs2(输出级栅极电压)。 - 引脚11和12为Vds1a和Vds1b(驱动级漏极电压)。 - 引脚14为Vds2(输出级漏极电压)。 - 引脚1、2、32、7、8、9、16、17、18、23、24、25为地(GND)。 - 引脚3、6、10、13、15、19、22、26、28、31无连接。

参数特性: - 典型增益:31 dB - 增益平坦度:±2.5 dB - 输入回波损耗:10 dB - 输出回波损耗:10 dB - 输出P1dB:33 dBm - OIP3(输出三阶截断点):45 dBm - 2.5% EVM时的输出功率:25.0 dBm - 工作电流范围:1050 mA - 驱动级热阻:20 °C/W - 输出级热阻:16 °C/W

功能详解: - 该放大器设计用于高效率和线性度,适用于WiMax和WLAN应用。 - 支持802.11ac标准,具有高调制效率和低EVM。

应用信息: - 适用于无线局域网(WLAN)和无线城域网(WiMax)的功率放大。 - 也可用于点对点(PTP)无线电链路的功率放大。

封装信息: - 采用QFN 5x5mm封装,符合RoHS标准。 - 封装具有匹配的输入和输出,便于级联。
MMA-445933H-M5 价格&库存

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