Important notice
Dear Customer,
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
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- © Nexperia B.V. (year). All rights reserved.
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PESD3V3V4UK;
PESD5V0V4UK; PESD9V0V4UK
Very low capacitance unidirectional quadruple ESD protection
diode arrays
Rev. 1 — 25 August 2010
Product data sheet
1. Product profile
1.1 General description
Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection
diode arrays in a leadless ultra small SOT891 Surface-Mounted Device (SMD) plastic
package designed to protect up to four unidirectional signal lines from the damage caused
by ESD and other transients.
1.2 Features and benefits
ESD protection of up to four lines
Very low diode capacitance
Max. peak pulse power: PPP = 28 W
Low clamping voltage: VCL = 9.5 V
AEC-Q101 qualified
Very low leakage current: IRM = 0.1 μA
ESD protection up to 15 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 2.7 A
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Communication systems
Portable electronics
Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PESD3V3V4UK
-
-
3.3
V
PESD5V0V4UK
-
-
5.0
V
PESD9V0V4UK
-
-
9.0
V
Per diode
VRWM
reverse standoff voltage
PESDxV4UK series
NXP Semiconductors
Very low capacitance unidirectional quadruple ESD protection arrays
Table 1.
Quick reference data …continued
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Cd
diode capacitance
f = 1 MHz; VR = 0 V
PESD3V3V4UK
-
13
17
pF
PESD5V0V4UK
-
12
15
pF
PESD9V0V4UK
-
6.5
10
pF
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode (diode 1)
2
common anode
1
6
3
cathode (diode 2)
2
5
4
cathode (diode 3)
3
4
5
not connected
6
cathode (diode 4)
Simplified outline
1
2
Graphic symbol
3
6
5
4
bottom view
006aab474
3. Ordering information
Table 3.
Ordering information
Type number
PESD3V3V4UK
Package
Name
Description
Version
-
plastic extremely thin small outline package;
no leads; 6 terminals; body 1 × 1 × 0.5 mm
SOT891
PESD5V0V4UK
PESD9V0V4UK
4. Marking
Table 4.
PESDXV4UK_SER
Product data sheet
Marking codes
Type number
Marking code
PESD3V3V4UK
P1
PESD5V0V4UK
P2
PESD9V0V4UK
P3
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
2 of 15
PESDxV4UK series
NXP Semiconductors
Very low capacitance unidirectional quadruple ESD protection arrays
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
peak pulse power
tp = 8/20 μs
Min
Max
Unit
-
25
W
-
28
W
Per diode
PPP
[1][2]
PESD3V3V4UK
PESD5V0V4UK
PESD9V0V4UK
peak pulse current
IPP
tp = 8/20 μs
[1][2]
-
-
PESD3V3V4UK
-
2.7
A
PESD5V0V4UK
-
2.5
A
PESD9V0V4UK
-
1.5
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
Per device
[1]
Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1, 3, 4, or 6 to pin 2.
Table 6.
ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
PESD3V3V4UK
-
10
kV
PESD5V0V4UK
-
15
kV
-
8
kV
-
400
V
-
8
kV
Per diode
VESD
[1][2]
PESD9V0V4UK
PESDxV4UK series
machine model
PESDxV4UK series
MIL-STD-883 (human
body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1, 3, 4 or 6 to pin 2.
Table 7.
[2]
ESD standards compliance
Standard
Conditions
Per diode
PESDXV4UK_SER
Product data sheet
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 4 kV
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
3 of 15
PESDxV4UK series
NXP Semiconductors
Very low capacitance unidirectional quadruple ESD protection arrays
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 μs
IPP
(%)
80
e−t
50 % IPP; 20 μs
40
10 %
0
10
20
30
30 ns
40
t (μs)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
8/20 μs pulse waveform according to
IEC 61000-4-5
PESDXV4UK_SER
Product data sheet
60 ns
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
4 of 15
PESDxV4UK series
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Very low capacitance unidirectional quadruple ESD protection arrays
6. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
PESD3V3V4UK
-
-
3.3
V
PESD5V0V4UK
-
-
5.0
V
PESD9V0V4UK
-
-
9.0
V
Per diode
VRWM
IRM
VBR
Cd
reverse standoff voltage
reverse leakage current
PESD3V3V4UK
VRWM = 3.3 V
-
0.13
1
μA
PESD5V0V4UK
VRWM = 5.0 V
-
0.05
0.3
μA
PESD9V0V4UK
VRWM = 9.0 V
-
0.003
0.1
μA
PESD3V3V4UK
5.3
5.6
5.9
V
PESD5V0V4UK
6.47
6.8
7.14
V
PESD9V0V4UK
11.4
12
12.7
V
PESD3V3V4UK
-
13
17
pF
PESD5V0V4UK
-
12.5
15
pF
-
6.5
10
pF
breakdown voltage
diode capacitance
IR = 1 mA
f = 1 MHz;
VR = 0 V
PESD9V0V4UK
VCL
rdif
PESDXV4UK_SER
Product data sheet
[1][2]
clamping voltage
PESD3V3V4UK
IPP = 2.6 A
-
-
9.5
V
PESD5V0V4UK
IPP = 2.4 A
-
-
10
V
PESD9V0V4UK
IPP = 1.5 A
-
-
19
V
differential resistance
IR = 5 mA
PESD3V3V4UK
-
5
16
Ω
PESD5V0V4UK
-
2.5
8
Ω
PESD9V0V4UK
-
10
30
Ω
[1]
Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1, 3, 4 or 6 to pin 2.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
PESDxV4UK series
NXP Semiconductors
Very low capacitance unidirectional quadruple ESD protection arrays
006aac379
102
006aac380
102
PPP
(W)
PPP
(W)
10
10
1
1
10
102
103
1
104
1
10
tp (μs)
102
103
tp (μs)
Tamb = 25 °C
Tamb = 25 °C
(1) PESD3V3V4UK
(1) PESD9V0V4UK
(2) PESD5V0V4UK
Fig 3.
Peak pulse power as a function of exponential
pulse duration; typical values
Fig 4.
Peak pulse power as a function of exponential
pulse duration; typical values
001aaa633
1.2
PPP
PPP(25°C)
0.8
0.4
0
0
50
100
150
200
Tj (°C)
Fig 5.
Relative variation of peak pulse power as a function of junction temperature; typical values
PESDXV4UK_SER
Product data sheet
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Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
6 of 15
PESDxV4UK series
NXP Semiconductors
Very low capacitance unidirectional quadruple ESD protection arrays
006aac381
16.0
006aac382
10
Cd
(pF)
IRM
IRM(25°C)
12.0
(3)
(2)
(1)
(1)
8.0
1
(1)
(2)
(2)
(3)
4.0
(3)
0.0
0.0
2.0
4.0
6.0
8.0
10−1
−75
10.0
VR (V)
−25
0
25
50
75
Tj (°C)
f = 1 MHz; Tamb = 25 °C
(1) PESD3V3V4UK
(1) PESD3V3V4UK
(2) PESD5V0V4UK
(2) PESD5V0V4UK
(3) PESD9V0V4UK
(3) PESD9V0V4UK
Fig 6.
Diode capacitance as a function of reverse
voltage; typical values
Fig 7.
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
I
−VCL −VBR −VRWM
V
−IRM
−IR
−
+
P-N
−IPP
006aaa407
Fig 8.
V-I characteristics for a unidirectional ESD protection diode
PESDXV4UK_SER
Product data sheet
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Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
7 of 15
PESDxV4UK series
NXP Semiconductors
Very low capacitance unidirectional quadruple ESD protection arrays
ESD TESTER
RZ
450 Ω
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
50 Ω
CZ
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
vertical scale = 40 V/div
horizontal scale = 50 ns/div
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
PESD3V3V4UK
GND
PESD5V0V4UK
GND
PESD9V0V4UK
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 10 V/div
horizontal scale = 50 ns/div
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
GND
GND
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
Fig 9.
clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
006aac383
ESD clamping test setup and waveforms
PESDXV4UK_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
8 of 15
PESDxV4UK series
NXP Semiconductors
Very low capacitance unidirectional quadruple ESD protection arrays
7. Application information
The PESDxV4UK series is designed for the protection of up to four unidirectional data or
signal lines from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The PESD3V3V4UK and the PESD5V0V4UK provide a surge capability of 25 W per line
and the PESD9V0V4UK provides a surge capability of 28 W per line for an 8/20 μs
waveform.
data
lines
PESDxV4UK
PESDxV4UK
1
6
2
5 n.c.
3
4
unidirectional protection of 4 lines
1
n.c. 2
3
6
5 n.c.
4
bidirectional protection of 3 lines
006aac384
Fig 10. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PESDXV4UK_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
9 of 15
PESDxV4UK series
NXP Semiconductors
Very low capacitance unidirectional quadruple ESD protection arrays
9. Package outline
1.05
0.95
0.5
max
0.04
max
0.55
3
4
2
5
1
6
0.35
1.05
0.95
0.20
0.12
0.35
0.40
0.32
0.35
0.27
Dimensions in mm
07-05-15
Fig 11. Package outline SOT891
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package Description
Packing quantity
5000
PESD3V3V4UK SOT891
4 mm pitch, 8 mm tape and reel; T4
[2]
-132
PESD5V0V4UK
PESD9V0V4UK
PESDXV4UK_SER
Product data sheet
[1]
For further information and the availability of packing methods, see Section 14.
[2]
T4: 90° rotated reverse taping
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
10 of 15
PESDxV4UK series
NXP Semiconductors
Very low capacitance unidirectional quadruple ESD protection arrays
11. Soldering
1.05
0.5
(6×)
1.4
0.6
(6×)
solder resist
solder land plus
solder paste
0.7
occupied area
Dimensions in mm
0.15
(6×)
0.25
(6×)
0.35
sot891_fr
Reflow soldering is the only recommended soldering method.
Fig 12. Reflow soldering footprint SOT891
PESDXV4UK_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
11 of 15
PESDxV4UK series
NXP Semiconductors
Very low capacitance unidirectional quadruple ESD protection arrays
12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESDXV4UK_SER v.1
20100825
Product data sheet
-
-
PESDXV4UK_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
12 of 15
PESDxV4UK series
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Very low capacitance unidirectional quadruple ESD protection arrays
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
PESDXV4UK_SER
Product data sheet
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Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
13 of 15
PESDxV4UK series
NXP Semiconductors
Very low capacitance unidirectional quadruple ESD protection arrays
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PESDXV4UK_SER
Product data sheet
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Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
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15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 9
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Quality information . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 August 2010
Document identifier: PESDXV4UK_SER
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