PESD5V0F5UV,115

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All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia SO T6 66 PESD5V0F5UV Femtofarad unidirectional fivefold ESD protection array Rev. 1 — 17 July 2012 Product data sheet 1. Product profile 1.1 General description Femtofarad capacitance unidirectional ElectroStatic Discharge (ESD) protection diode array designed to protect up to five signal lines from the damage caused by ESD and other transients. The device is encapsulated in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. The combination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection and antenna protection applications. 1.2 Features and benefits     ESD protection of up to 5 lines Low diode capacitance Cd = 0.55 pF Ultra low leakage current IRM < 1 nA ESD protection up to 8 kV  IEC 61000-4-2; level 4 (ESD)  IEC 61000-4-5 (surge); IPPM = 2 A  AEC-Q101 qualified 1.3 Applications     Computers and peripherals Audio and video equipment Cellular handsets and accessories 10/100/1000 Mbit/s Ethernet     Communication systems Portable electronics SIM card protection High-speed data lines 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified. Symbol Parameter VRWM reverse standoff voltage Cd diode capacitance Conditions f = 1 MHz; VR = 0 V Min Typ Max Unit - - 5 V - 0.55 0.7 pF PESD5V0F5UV NXP Semiconductors Femtofarad unidirectional fivefold ESD protection array 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 common anode 3 4 5 cathode 6 cathode Simplified outline 6 5 Graphic symbol 4 1 6 cathode 2 5 cathode 3 4 1 2 3 006aaa159 3. Ordering information Table 3. Ordering information Type number Package Name PESD5V0F5UV - Description Version plastic surface-mounted package; 6 leads SOT666 4. Marking Table 4. PESD5V0F5UV Product data sheet Marking codes Type number Marking code PESD5V0F5UV AH All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2012 © NXP B.V. 2012. All rights reserved. 2 of 13 PESD5V0F5UV NXP Semiconductors Femtofarad unidirectional fivefold ESD protection array 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit IPPM rated peak pulse current tp = 8/20 s - 2 A Tj Tamb junction temperature - 150 C ambient temperature 55 +150 C Tstg storage temperature 65 +150 C [1][2] [1] Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321. [2] Measured from pin 1, 3, 4, 5 or 6 to pin 2. Table 6. ESD maximum ratings Tamb = 25 C unless otherwise specified. Symbol Parameter VESD Conditions electrostatic discharge voltage Min Max Unit IEC 61000-4-2 (contact discharge) [1][2] - 8 kV IEC 61000-4-2 (air discharge) [1][2] - 8 kV [2] - 400 V - 10 kV machine model MIL-STD-883 (human body model) [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1, 3, 4, 5 or 6 to pin 2. Table 7. ESD standards compliance Standard PESD5V0F5UV Product data sheet Conditions IEC 61000-4-2; level 4 (ESD) > 8 kV (contact) MIL-STD-883; class 3B (human body model) > 8 kV All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 July 2012 © NXP B.V. 2012. All rights reserved. 3 of 13 PESD5V0F5UV NXP Semiconductors Femtofarad unidirectional fivefold ESD protection array 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 μs IPP (%) 80 e−t 50 % IPP; 20 μs 40 10 % 0 10 20 30 30 ns 40 t (μs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 s pulse waveform according to IEC 61000-4-5 and IEC 61643-321 Fig 2. ESD pulse waveform according to IEC 61000-4-2 6. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Min Typ Max Unit VRWM reverse standoff voltage - - 5 V IRM reverse leakage current VRWM = 5 V -