NJM2670E3-TE2

NJM2670 DUAL H BRIDGE DRIVER ■ GENERAL DESCRIPTION ■ PACKAGE OUTLINE The NJM2670 is a general-purpose 60V dual H-bridge drive IC. It consists of a pair of H-bridges, a thermal shut down circuit and its alarm output. The alarm output can detect application problems and the system reliability will be significantly improved if monitored by Micro Processor. Therefore, it is suitable for two-phase stepper motor application driven by microprocessor. NJM2670D2 ■ FEATURES • Wide Voltage Range • Wide Range of Current Control • Thermal overload Protection • Dead Band Protector • Package Outline NJM2670E3 (4V to 60V) (5 to 1500mA ) (DIP-22, EMP-24) ■ PIN CONNECTION SENSE A VS A INA1 VCC ENABLE A INA2 OUTA2 OUTA1 GND GND GND GND INB1 INB2 TSD ARM ENABLE B NC NC OUTB1 OUTB2 SENSE B VS B VS A SENSE A INA1 VCC ENABLE A INA2 NC NC OUTA2 OUTA1 GND GND GND GND INB1 INB2 TSD ARM ENABLE B NC NC OUTB1 OUTB2 VS B SENSE B DIP-22 EMP-24 -1- NJM2670 ■ BLOCK DIAGRAM VS A INA1 INA2 OUTA1 OUTA2 SENSE A ENABLE A VCC Thermal Shut Down TSD_ARM VS B INB1 INB2 OUTB1 OUTB2 SENSE B ENABLE B -2- GND NJM2670 ■ ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) PARAMETER SYMBOL Maximum Supply Voltage VMM Logic Supply Voltage VCC Input Voltage Range VIN Output Current IOUT PD25 Power Dissipation@T(GND)=25°C PD125 Power Dissipation@T(GND)=125°C Operating Junction Temperature Topr Storage Temperature Tstg ■ RECOMENNDO OPERATING CONDITIONS PARAMETER SYMBOL Supply Voltage Logic Voltage Range Maximum Output Current Total Power Dissipation ■ THERMAL CHARACTERISTICS PARAMETER SYMBOL Thermal resistance Rthj-GND Rthj-A Rthj-GND Rthj-A RATINGS 60 7 -0.3 to 7 1.5 5 2 -40 ∼ 85 -55 ∼ 150 TEST CONDITIONS UNIT V V V A W W °C °C MIN. TYP. MAX. UNIT VMM 4 - 55 V VCC IOUT PD PD 4.75 - 5.00 - 5.25 1.3 5 2.2 V A W W MIN. TYP. MAX. UNIT - 11 40 13 42 - TGND=25°C TGND=125°C TEST CONDITIONS DIP22 package. DIP22 package. Note EMP24 package. EMP24 package. Note °C/W °C/W °C/W °C/W Note : All ground pins soldered onto a 20 cm2 PCB copper area with free air convection, TA=+25°C -3- NJM2670 ■ ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL GENERAL Icc Quiescent current Thermal shutdown Off-State leak current Thermal alarm output saturation Dead time protection LOGIC Input LOW voltage Input HIGH voltage Input HIGH current Input LOW current OUTPUT Upper transistor saturation Lower transistor saturation Upper diode forward Lower diode forward Output leakage current Upper diode recoverly time Lower diode recoverly time Ttsd Itsd-LEAK Vtsd Td ViL ViH IiH IiL VOU1 VOU2 VOL1 VOL2 VfU1 VfU2 VfL1 VfL2 Lo-LEAK TrrU TrrL TEST CONDITIONS MIN. TYP. MAX. UNIT Enable=H,IN1=IN3=L,IN 2=IN4=H - 40 - mA - 170 0.5 1 - °C 50 0.7 - µA V µs - - 0.6 20 - V V µA mA 1.3 1.5 0.5 0.8 1.3 1.6 1.3 1.6 250 250 1.5 V V V V V V V V mA ns ns TSD ARM=5V Io=5mA Vi=2.4V Vi=0.4V Io=1000mA Io=1300mA Io=1000mA Io=1300mA Io=1000mA Io=1300mA Io=1000mA Io=1300mA VMM=50V 2 -0.4 - 1.8 0.8 1.3 1.6 1.9 1.6 1.9 1 - ■ TRUTH TABLE INPUT (L=Low,H=High,X=Don't care) ENABLE A=H INA1 INA2 ENABLE B=H INB1 INB2 L L L H H L H H ENABLE A=L X X ENABLE B=L -4- OUTPUT (H=Source,L=Sink) OUTA2 OUTA1 OUTB1 OUTB2 L L L H H L H H All Transistor turned OFF OUTPUT mode short break mode CW CCW short break mode NJM2670 ■ TYPICAL APPLICATION 1). Bipolar Stepper Motor VMM (4 ∼ 55V) VS A INA1 INA2 OUTA1 Motor OUTA2 SENSE A CPU or Microprocessor ENABLE A VCC VS B TSD VCC TSD ARM INB1 OUTB1 INB2 OUTB2 SENSE B GND ENABLE B (VMMGND) 2). Single Phase DC Motor VMM (4 ∼ 55V) VS A INA1 INA2 OUTA1 Motor OUTA2 SENSE A ENABLE A CPU or Microprocessor VCC VS B VCC TSD TSD ARM INB1 INB2 OUTB1 Motor OUTB2 SENSE B GND ENABLE B (VMMGND) -5- NJM2670 3) Current Control Application for Bipolar Stepper Motor VS A VMM (4 ∼ 55V) INA1 INA2 OUTA1 Motor OUTA2 SENSE A CPU or Microprocessor ENABLE A VCC VS B VCC TSD ARM TSD INB1 OUTB1 INB2 OUTB2 SENSE B GND ENABLE B Current Control ■ TIMING CHART INA1(B1) INA2(B2) ENABLE A(B) OUTA1(B1) OUTA2(B2) tpd1 tpd1 tpd2 tpd1:IN_HL propagation delay tpd2:IN_LH propagation delay td :Output dead band protection delay te1 :ENABLE_HL propagation delay te2 :ENABLE_LH propagation delay th :Output High impedance section -6- td td te1 tpd2 tpd1 tpd2 td te1 te2 te2 th Reference value 1.0 2.5 1.5 3.5 2.0 unit us us us us us NJM2670 ■ TYPICAL APPLICATION 1 IC C vs. VCC 200 VIN(INA1)-h ysteresis vs. Tem perature 1 Ta= 25degC Io=500mA VS=48V EN 1=E N2=H VS=48V R L=N otin g EN1=EN2=H INA2=L INB1=INB2=L 0.8 VIN(INA1)-hysteresis [V ] ICC [mA] 150 100 0.6 0.4 50 0.2 0 0 0 1 2 3 4 5 6 7 -50 0 50 100 150 Temperature [degC ] VC C [V] VIN(INA1) vs. Tem perature VIN(IN A1)-IB vs. Tem p erature 0.8 VS=48V RL=Nothing EN 1=E N2=H INA 2=L INB 1=INB 2=L 2.4 2.2 VS=48V RL=Nothing EN 1=E N2=H INA 2=L INB 1=INB 2=L 0.6 INA1=L to H VIN(IN A1)-IB [V ] VIN(INA1) [V] 2 1.8 1.6 0.4 INA1= 0.4V 0.2 INA1= 2.4V 1.4 IN A1=H to L 0 1.2 1 -0.2 -50 0 50 100 150 -50 N JM 2670 V sat(D ) vs. Io N JM 2670 V sat(U ) vs. Io 100 150 (L ot-N o.U 2009T ,D IP 16) 2 V C C=5V V S=48V T a=25degC O U TA1 O U TA2 O U TB1 O U TB2 2.5 50 Temperature [degC] (Lot-N o.U 2009T ,D IP 16) 3 0 Temperature [degC] V C C=5 V V S =48V T a=25degC O U T A1 O U T A2 O U T B1 O U T B2 1.8 1.6 V sat(U) [V ] V sat(D) [V ] 2 1.5 1.4 1.2 1 1 0.5 0.8 0 0.6 0 0.5 1 Io [A ] 1 .5 2 0 0 .5 1 1.5 2 Io [A ] -7- NJM2670 ■ TYPICAL APPLICATION 2 NJM2670 Diode(U) vs. Io NJM2670 Diode(D) vs. Io (Lot-No.U2009T,DIP16) 1.8 1.6 1.4 1.2 1.2 1 0.8 0.8 0.6 0 0.5 1 1.5 2 0 0.5 1 1.5 Io [A] Io [A] ICC vs. Temperature ICC vs. Temperature 60 2 80 VCC=5V VS=48V RL=Nothing IN1=IN2=H IN3=IN4=L EN=H 55 50 45 40 VCC=5V VS=48V RL=Nothing 70 60 ICC [mA] ICC [mA] 1.4 1 0.6 VCC=5V VS=48V Ta=25degC OUTA1 OUTA2 OUTB1 OUTB2 1.6 Diode(U) [V] Diode(D) [V ] 1.8 VCC=5V VS=48V Ta=25degC OUTA1 OUTA2 OUTB1 OUTB2 50 IN1=IN2=H IN3=IN4=H EN=H 40 EN=L 35 30 30 IN1=IN2=L IN3=IN4=L EN=H 20 25 20 10 -50 -25 0 25 50 75 100 125 -50 150 -25 0 Temperature [degC] 75 100 125 150 NJM2670 Vsat(U) vs. Temperature Io=1.0A (Lot-No.U2009T,DIP16) Io=1.0A (Lot-No.U2009T,DIP16) 1.4 VCC=5V VS=48V OUTA1 OUTA2 OUTB1 OUTB2 1 50 Temperature [degC] NJM2670 Vsat(D) vs. Temperature 1.2 25 VCC=5V VS=48V OUTA1 OUTA2 OUTB1 OUTB2 Vsat(U) [V] V sat(D) [V ] 1.35 0.8 1.3 0.6 1.25 0.4 1.2 0.2 -50 -25 0 25 50 75 Temperature [degC] -8- 100 125 150 -50 -25 0 25 50 75 Temperature [degC] 100 125 150 NJM2670 ■ TYPICAL APPLICATION 3 NJM2670 Vsat(D) vs. Temperature Vsat(U) [V] 1 1.6 1.5 0.8 1.4 0.6 1.3 0.4 VCC=5V VS=48V OUTA1 OUTA2 OUTB1 OUTB2 1.7 1.2 Io=1.3A (Lot-No.U2009T,DIP16) 1.8 VCC=5V VS=48V OUTA1 OUTA2 OUTB1 OUTB2 1.4 Vsat(D ) [V ] Io=1.3A (Lot-No.U2009T,DIP16) 1.6 NJM2670 Vsat(U) vs. Temperature 1.2 -50 -25 0 25 50 75 100 125 150 -50 -25 0 Temperature [degC] NJM2670 Diode(D) vs. Temperature 50 75 100 125 150 NJM2670 Diode(U) vs. Temperature (Lot-No.U2009T,DIP16) 1.6 25 Temperature [degC] (Lot-No.U2009T,DIP16) 1.6 VCC=5V VS=48V VCC=5V VS=48V 1.5 1.5 Diode(U) [V ] Diode(D) [V ] I=1.3A 1.4 I=1.0A 1.3 1.4 1.3 1.2 1.2 1.1 1.1 1 I=1.3A I=1.0A 1 -50 -25 0 25 50 75 100 125 150 Temperature [degC] -50 -25 0 25 50 75 100 125 150 Temperature [degC] NJM2670 Diode(U) vs. Temperature (Lot-No.U2009T,DIP16) 1.2 VCC=5V VS=48V 1.15 Diode(U) [V ] 1.1 I=0.5A 1.05 1 0.95 0.9 0.85 0.8 -50 -25 0 25 50 75 Temperature [degC] 100 125 150 [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. -9-