SIT8009ACF11-18S

厂商：
SITIME
封装：
4-SMD, No Lead
描述：
MEMS OSC PROGRAMMABLE

数据手册：

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详情介绍
数据手册
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SIT8009ACF11-18S 数据手册

SiT8009 High Frequency, Low Power Oscillator The Smart Timing Choice The Smart Timing Choice Features Applications  Any frequency between 115 MHz and 137 MHz accurate to 6 decimal places  Ideal for GPON/GPON, network switches, routers. servers, embedded systems  Operating temperature from -40°C to 85°C. Refer to SiT8918 and SiT8920 for high temperature options  Ideal for Ethernet, PCI-E, DDR, etc.  Excellent total frequency stability as low as ±20 PPM  Low power consumption of 4.8 mA (typical in 1.8V)  Output enable or standby mode  LVCMOS/HCMOS compatible output  Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm  Instant samples with Time Machine II and field programmable oscillators  Pb-free, RoHS and REACH compliant Electrical Characteristics[1] Parameter and Conditions Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 115 – 137 MHz Frequency Stability and Aging Frequency Stability F_stab -20 – +20 PPM -25 – +25 PPM – +50 PPM -50 Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and variations over operating temperature, rated power supply voltage and load. Operating Temperature Range Operating Temperature Range T_use -20 – +70 °C Extended Commercial -40 – +85 °C Industrial Supply Voltage and Current Consumption Supply Voltage Current Consumption Vdd Idd 1.62 1.8 1.98 V 2.25 2.5 2.75 V Contact SiTime for 1.5V support 2.52 2.8 3.08 V 2.7 3.0 3.3 V 2.97 3.3 3.63 V 2.25 – 3.63 V – 6.2 7.5 mA – 5.4 6.4 mA – 4.8 5.6 mA No load condition, f = 125 MHz, Vdd = 1.8V – 4 mA Vdd = 2.5V to 3.3V, OE = GND, output is Weakly Pulled Down No load condition, f = 125 MHz, Vdd = 2.8V, 3.0V, 3.3V or 2.25 to 3.63V No load condition, f = 125 MHz, Vdd = 2.5V OE Disable Current I_OD – – – 3.8 mA Vdd = 1.8V, OE = GND, output is Weakly Pulled Down Standby Current I_std – 2.6 4.3 A ST = GND, Vdd = 2.8V to 3.3V, Output is Weakly Pulled Down – 1.4 2.5 A ST = GND, Vdd = 2.5V, Output is Weakly Pulled Down – 0.6 1.3 A ST = GND, Vdd = 1.8V, Output is Weakly Pulled Down LVCMOS Output Characteristics Duty Cycle Rise/Fall Time DC 45 – 55 % Tr, Tf – 1 2 ns All Vdds Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80% – 1.3 2.5 ns Vdd =1.8V, 20% - 80% Vdd = 2.25V - 3.63V, 20% - 80% – 0.8 2 ns Output High Voltage VOH 90% – – Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V) Output Low Voltage VOL – – 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V) Input Characteristics Input High Voltage VIH 70% – – Vdd Input Low Voltage VIL – – 30% Vdd Pin 1, OE or ST Input Pull-up Impedence Z_in – 87 100 k Pin 1, OE logic high or logic low, or ST logic high 2 – – M Pin 1, ST logic low Pin 1, OE or ST Note: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. SiTime Corporation Rev. 1.0 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Revised June 12, 2013 SiT8009 High Frequency, Low Power Oscillator The Smart Timing Choice The Smart Timing Choice Electrical Characteristics[1] (continued) Parameter and Conditions Symbol Min. Typ. Max. Unit Condition Startup and Resume Timing Startup Time Enable/Disable Time Resume Time T_start – – 5 ms Measured from the time Vdd reaches its rated minimum value T_oe – – 130 ns f = 115 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles T_resume – – 5 ms Measured from the time ST pin crosses 50% threshold Jitter RMS Period Jitter T_jitt RMS Phase Jitter (random) T_phj – 1.93 3 ps f = 125 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V – 1.64 4 ps f = 125 MHz, Vdd = 1.8V – 0.5 0.9 ps Integration bandwidth = 900 kHz to 7.5 MHz – 1.3 2 ps Integration bandwidth = 12 kHz to 20 MHz Note: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. Pin Description Pin 1 Symbol Functionality Top View Output Enable H or Open[2]: specified frequency output L: output is high impedance. Only output driver is disabled. Standby H or Open[2]: specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. OE/ ST Electrical OE/ST 1 4 VDD GND 2 3 OUT ground[3] 2 GND Power 3 OUT Output Oscillator output 4 VDD Power Power supply voltage[3] Notes: 2. A pull-up resistor of

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SIT8009ACF11-18S

物料型号：SiT8009

器件简介：SiT8009是一款能够在115 MHz至137 MHz范围内提供高精度时钟信号的振荡器，具有优秀的频率稳定性和低功耗特性。

引脚分配： - 1号引脚：OE/ST，用于输出使能或待机模式。 - 2号引脚：GND，电源地。 - 3号引脚：OUT，振荡器输出。 - 4号引脚：VDD，电源供电电压。

参数特性： - 工作温度范围：-40°C至85°C。 - 频率稳定性：±20 PPM（包括初始容差、25°C下第一年老化、工作温度范围内的变化）。 - 功耗：典型值为1.8V供电时4.8 mA。 - 输出使能或待机模式。 - LVCMOS/HCMOS兼容输出。 - 封装尺寸：包括2.0 x 1.6 mm、2.5 x 2.0 mm、3.2 x 2.5 mm、5.0 x 3.2 mm、7.0 x 5.0 mm等。

功能详解： - SiT8009提供可编程的驱动强度特性，以优化特定应用中的时钟上升/下降时间。 - 支持无铅、RoHS和REACH合规。 - 支持Time Machine II和现场可编程振荡器，实现即时样品和定制。

应用信息： - 适用于GPON/GPON、网络交换机、路由器、服务器和嵌入式系统。 - 适用于Ethernet、PCI-E、DDR等。

封装信息： - 提供多种行业标准封装尺寸。

电气特性表详细列出了不同条件下的参数和条件，包括频率范围、频率稳定性、老化、工作温度范围、供电电压和电流消耗、输出特性、输入特性等。

绝对最大值和热考虑部分提供了器件在极端条件下的参数，以避免对器件造成永久性损坏。

环境合规性部分列出了器件满足的环境和机械测试标准。

测试电路和波形图提供了测试SiT8009时使用的电路图和相关的时序图。

性能图展示了在不同频率下的电流消耗、RMS周期抖动、RMS相位抖动、占空比和上升时间等性能指标。

可编程驱动强度部分详细介绍了如何通过调整驱动强度来优化时钟的上升/下降时间，以适应不同的应用需求。

即时样品部分介绍了SiTime提供的现场可编程版本SiT8009，以及如何使用Time Machine II进行配置。

订购信息部分提供了如何根据所需的频率、稳定性、温度范围、供电电压、输出驱动强度和封装尺寸来订购SiT8009。

补充信息部分提供了有关SiTime公司和其产品的额外信息，包括MEMS技术如何优于石英技术、可靠性、老化性能、电磁敏感性、电源噪声抑制、抗振性和抗冲击性等方面的比较。