SIT8009AI-32-30E-125.000000

SiT8009 High Frequency, Low Power Oscillator The Smart Timing Choice The Smart Timing Choice Features Applications  Any frequency between 115 MHz and 137 MHz accurate to 6 decimal places  Ideal for GPON/GPON, network switches, routers. servers, embedded systems  Operating temperature from -40°C to 85°C. Refer to SiT8918 and SiT8920 for high temperature options  Ideal for Ethernet, PCI-E, DDR, etc.  Excellent total frequency stability as low as ±20 PPM  Low power consumption of 4.8 mA (typical in 1.8V)  Output enable or standby mode  LVCMOS/HCMOS compatible output  Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm  Instant samples with Time Machine II and field programmable oscillators  Pb-free, RoHS and REACH compliant Electrical Characteristics[1] Parameter and Conditions Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 115 – 137 MHz Frequency Stability and Aging Frequency Stability F_stab -20 – +20 PPM -25 – +25 PPM – +50 PPM -50 Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and variations over operating temperature, rated power supply voltage and load. Operating Temperature Range Operating Temperature Range T_use -20 – +70 °C Extended Commercial -40 – +85 °C Industrial Supply Voltage and Current Consumption Supply Voltage Current Consumption Vdd Idd 1.62 1.8 1.98 V 2.25 2.5 2.75 V Contact SiTime for 1.5V support 2.52 2.8 3.08 V 2.7 3.0 3.3 V 2.97 3.3 3.63 V 2.25 – 3.63 V – 6.2 7.5 mA – 5.4 6.4 mA – 4.8 5.6 mA No load condition, f = 125 MHz, Vdd = 1.8V – 4 mA Vdd = 2.5V to 3.3V, OE = GND, output is Weakly Pulled Down No load condition, f = 125 MHz, Vdd = 2.8V, 3.0V, 3.3V or 2.25 to 3.63V No load condition, f = 125 MHz, Vdd = 2.5V OE Disable Current I_OD – – – 3.8 mA Vdd = 1.8V, OE = GND, output is Weakly Pulled Down Standby Current I_std – 2.6 4.3 A ST = GND, Vdd = 2.8V to 3.3V, Output is Weakly Pulled Down – 1.4 2.5 A ST = GND, Vdd = 2.5V, Output is Weakly Pulled Down – 0.6 1.3 A ST = GND, Vdd = 1.8V, Output is Weakly Pulled Down LVCMOS Output Characteristics Duty Cycle Rise/Fall Time DC 45 – 55 % Tr, Tf – 1 2 ns All Vdds Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80% – 1.3 2.5 ns Vdd =1.8V, 20% - 80% Vdd = 2.25V - 3.63V, 20% - 80% – 0.8 2 ns Output High Voltage VOH 90% – – Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V) Output Low Voltage VOL – – 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V) Input Characteristics Input High Voltage VIH 70% – – Vdd Input Low Voltage VIL – – 30% Vdd Pin 1, OE or ST Input Pull-up Impedence Z_in – 87 100 k Pin 1, OE logic high or logic low, or ST logic high 2 – – M Pin 1, ST logic low Pin 1, OE or ST Note: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. SiTime Corporation Rev. 1.0 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Revised June 12, 2013 SiT8009 High Frequency, Low Power Oscillator The Smart Timing Choice The Smart Timing Choice Electrical Characteristics[1] (continued) Parameter and Conditions Symbol Min. Typ. Max. Unit Condition Startup and Resume Timing Startup Time Enable/Disable Time Resume Time T_start – – 5 ms Measured from the time Vdd reaches its rated minimum value T_oe – – 130 ns f = 115 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles T_resume – – 5 ms Measured from the time ST pin crosses 50% threshold Jitter RMS Period Jitter T_jitt RMS Phase Jitter (random) T_phj – 1.93 3 ps f = 125 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V – 1.64 4 ps f = 125 MHz, Vdd = 1.8V – 0.5 0.9 ps Integration bandwidth = 900 kHz to 7.5 MHz – 1.3 2 ps Integration bandwidth = 12 kHz to 20 MHz Note: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. Pin Description Pin 1 Symbol Functionality Top View Output Enable H or Open[2]: specified frequency output L: output is high impedance. Only output driver is disabled. Standby H or Open[2]: specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. OE/ ST Electrical OE/ST 1 4 VDD GND 2 3 OUT ground[3] 2 GND Power 3 OUT Output Oscillator output 4 VDD Power Power supply voltage[3] Notes: 2. A pull-up resistor of