SIT8103AI-12-18E-100.00000X

SIT8103AI-12-18E-100.00000X

  • 厂商:

    SITIME(赛特时脉)

  • 封装:

    SIP4

  • 描述:

    MEMS OSC XO 100.0000MHZ LVCMOS

  • 数据手册
  • 价格&库存
SIT8103AI-12-18E-100.00000X 数据手册
SiT8103 High Performance 1-110 MHz Oscillator ■ Features, Benefits and Applications ■ MEMS oscillator with LVCMOS/LVTTL compatible output ■ 1-110 MHz frequency range ■ Frequency stability as low as ±20 PPM ■ Typical current consumption of 6.1 mA in active mode ■ Standby or output enable modes ■ 1.8V, 2.5V - 3.3V supply voltage ■ SoftEdgeTM configurable rise/fall time for driving higher loads or EMI reduction. ■ Four industry-standard packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm ■ All-silicon device with outstanding reliability of 2 FIT, 10x improvement over quartz-based devices ■ Ultra short lead time ■ Ideal for consumer electronics: video, set top boxes, HDTV, DVR, scanners, printers, IP camera, etc. ■ Ideal for high-speed serial protocols: Ethernet, USB, SATA, SAS, Fibre Channel, Firewire, PCI Express ■ Specifications Electrical Characteristics[1] Parameter Output Frequency Range Frequency Stability Aging Operating Temperature Range Symbol Min. Typ. Max. Unit Condition f F_stab 1 -20 -25 – – – 110 +20 +25 MHz PPM PPM Inclusive of: Initial stability, operating temperature, rated power, supply voltage change, load change, shock and vibration. -30 – +30 PPM -50 – +50 PPM Ag -1.0 – 1.0 PPM 1st year at 25°C T_use – – 1.8 2.5 2.8 3.3 6.7 6.1 2.4 1.2 0.4 50 50 1 1.3 1.9 2.3 2.9 3.4 – +70 +85 1.89 2.75 3.08 3.63 7.5 6.7 4.3 2.2 0.8 55 60 2 2.5 2.6 3.3 3.9 4.6 – °C °C V V V V mA mA μA μA μA % % ns ns ns ns ns ns Vdd Extended Commercial Industrial Any voltage between 2.5V and 3.3V is supported with 1 decimal point resolution. ± 20 PPM available in extended commercial temperature only Rise/Fall Time Tr, Tf Output Voltage High VOH -20 -40 1.71 2.25 2.52 2.97 – – – – – 45 40 – – – – – – 90% Output Voltage Low VOL – – 10% Vdd No load condition, f = 20 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V No load condition, f = 20 MHz, Vdd = 1.8 V ST = GND, Vdd = 3.3 V, Output is Weakly Pulled Down ST = GND, Vdd = 2.5 or 2.8 V, Output is Weakly Pulled Down ST = GND, Vdd = 1.8 V, Output is Weakly Pulled Down All Vdds. f 75 MHz 15pF load, 20% - 80% Vdd=2.5V, 2.8V or 3.3V 15pF load, 20% - 80% Vdd=1.8V 30pF load, 20% - 80% Vdd=2.5V, 2.8V or 3.3V 30pF load, 20% - 80% Vdd=1.8V 45pF load, 20% - 80% Vdd=2.5V, 2.8V or 3.3V 45pF load, 20% - 80% Vdd=1.8V IOH = -4 mA (Vdd = 3.3 V) IOH = -3 mA (Vdd = 2.8 V and Vdd = 2.5 V) IOH = -2 mA (Vdd = 1.8 V) Input Voltage High Input Voltage Low Startup Time Resume Time RMS Period Jitter VIH VIL T_start T_resume T_jitt 70% – – – – – – – – – – 3.0 – – 0.6 0.8 – 30% 10 4 4.0 6.5 – – Vdd Vdd ms ms ps ps ps ps Pin 1, OE or ST Pin 1, OE or ST Measured from the time Vdd reaches its rated minimum value Measured from the time ST pin crosses 50% threshold f = 75 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V f = 75 MHz, Vdd = 1.8 V f = 75 MHz @ BW: 900 kHz to 7.5 MHz, VDD = 2.5 V to 3.3 V f = 75 MHz @ BW: 900 kHz to 7.5 MHz, VDD = 1.8 V Supply Voltage Vdd Current Consumption Idd Standby Current Duty Cycle RMS Phase Jitter (random) I_std DC T_phj Note: 1. All electrical specifications in the above table are measured with 15pF output load, unless stated otherwise in the Condition. For more information about SoftEdgeTM rise/fall time for driving higher output load or reducing EMI, download http://www.sitime.com/support2/documents/AN10022-rise-and-fall-time-rev1.1.pdf. SiTime Corporation Rev. 1.46 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Revised August 11, 2011 SiT8103 High Performance 1-110 MHz Oscillator Pin Description Tables Pin #1 Functionality OE H or Open[2]: Pin Map specified frequency output L: output is high impedance ST H or Open: specified frequency output Pin Connection 1 OE/ST 2 GND 3 CLK 4 VDD L: output is low level (weak pull down). Oscillation stops Absolute Maximum Table Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 °C VDD -0.5 4 V Electrostatic Discharge – 6000 V Theta JA (with copper plane on VDD and GND) – 75 °C/W °C/W Theta JC (with PCB traces of 0.010 inch to all pins) – 24 Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C Number of Program Writes – 1 NA 1,000+ – years Program Retention over -40 to 125°C, Process, VDD (0 to 3.65 V) Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260°C Startup and Resume Timing Diagram 90% Vdd: 2.5/2.8/3.3 V parts 95% Vdd: 1.8 V parts Vdd Vdd Pin 4 Voltage ST Voltage 50% Vdd T_resume T_start CLK Output T_start: Time to start from power-off (ST/OE Mode) CLK Output T_resume: Time to resume from ST (ST Mode Only) Note: 2. In 1.8 V mode, a resistor of
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