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SIT8924AA-72-33E-24.545450

SIT8924AA-72-33E-24.545450

  • 厂商:

    SITIME

  • 封装:

    SMD2016_4P

  • 描述:

    MEMS OSC XO 24.54545MHZ LVCMOS

  • 详情介绍
  • 数据手册
  • 价格&库存
SIT8924AA-72-33E-24.545450 数据手册
SiT8924 Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Features Applications  AEC-Q100 with extended temperature range (-55°C to 125°C)  Automotive, extreme temperature and other high-rel electronics  Frequencies between 1 MHz and 110 MHz accurate to 6 decimal places  Infotainment systems, collision detection devices, and in-vehicle networking  Supply voltage of 1.8V or 2.25V to 3.63V  Power train control  Excellent total frequency stability as low as ±25 ppm  Industry best G-sensitivity of 0.1 PPB/G  Low power consumption of 3.8 mA typical at 1.8V  LVCMOS/LVTTL compatible output  Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm  RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free Electrical Specifications Table 1. Electrical Characteristics[1, 2] Parameters Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 1 – 110 MHz Refer to Table 13 and Table 14 for a list supported frequencies Frequency Stability and Aging Frequency Stability F_stab -25 – +25 ppm -30 – +30 ppm – +50 ppm -50 Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and variations over operating temperature, rated power supply voltage and load (15 pF ± 10%). Operating Temperature Range Operating Temperature Range (ambient) T_use -40 – +105 °C -40 – +125 °C Extended Industrial, AEC-Q100 Grade 2 Automotive, AEC-Q100 Grade 1 -55 – +125 °C Extended Temperature, AEC-Q100 Supply Voltage and Current Consumption Supply Voltage Current Consumption Vdd Idd 1.62 1.8 1.98 V 2.25 – 3.63 V All voltages between 2.25V and 3.63V including 2.5V, 2.8V, 3.0V and 3.3V are supported. – 4.0 4.8 mA No load condition, f = 20 MHz, Vdd = 2.25V to 3.63V – 3.8 4.5 mA No load condition, f = 20 MHz, Vdd = 1.8V LVCMOS Output Characteristics Duty Cycle Rise/Fall Time DC 45 – 55 % Tr, Tf – 1.5 3 ns All Vdds Vdd = 2.25V - 3.63V, 20% - 80% – 1.3 2.5 ns Vdd = 1.8V, 20% - 80% Output High Voltage VOH 90% – – Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V) IOH = -2 mA (Vdd = 1.8V) Output Low Voltage VOL – – 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V) IOL = 2 mA (Vdd = 1.8V) Input High Voltage VIH 70% – – Vdd Pin 1, OE Input Low Voltage VIL – – 30% Vdd Pin 1, OE Input Pull-up Impedence Z_in – 100 – k Pin 1, OE logic high or logic low Input Characteristics Startup and Resume Timing Startup Time T_start – – 10 ms Measured from the time Vdd reaches 90% of final value Enable/Disable Time T_oe – – 130 ns f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles RMS Period Jitter T_jitt – 1.6 2.5 ps f = 75 MHz, 2.25V to 3.63V – 1.9 3.0 ps f = 75 MHz, 1.8V Jitter RMS Phase Jitter (random) T_phj – 0.5 – ps f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz – 1.3 – ps f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz Notes: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. 2. The typical value of any parameter in the Electrical Characteristics table is specified for the nominal value of the highest voltage option for that parameter and at 25 °C temperature. SiTime Corporation Rev. 1.01 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Revised June 18, 2015 SiT8924 Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Table 2. Pin Description Pin Top View Symbol Functionality Output Enable 1 OE/NC No Connect H[3]: specified frequency output L: output is high impedance. Only output driver is disabled. OE/NC 1 4 VDD GND 2 3 OUT [3] Any voltage between 0 and Vdd or Open : Specified frequency output. Pin 1 has no function. 2 GND Power Electrical ground[4] 3 OUT Output Oscillator output 4 VDD Power Power supply voltage[4] Figure 1. Pin Assignments Notes: 3. In OE mode, a pull-up resistor of 10k or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option. 4. A capacitor of value 0.1 µF or higher between Vdd and GND is required. N Table 3. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 °C Vdd -0.5 4 V Electrostatic Discharge – 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C Junction Temperature[5] – 150 °C Note: 5.Exceeding this temperature for extended period of time may damage the device. Table 4. Thermal Consideration[6] JA, 4 Layer Board JA, 2 Layer Board JC, Bottom 7050 142 273 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 2016 152 252 36 (°C/W) Package (°C/W) (°C/W) Note: 6. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table. Table 5. Maximum Operating Junction Temperature[7] Max Operating Temperature (ambient) Maximum Operating Junction Temperature 105°C 115°C 125°C 135°C Note: 7. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. Table 6. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260°C Rev. 1.01 Page 2 of 12 www.sitime.com SiT8924 Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Test Circuit and Waveform[8] Vdd Vout 0.1µF tr 3 4 Power Supply Test Point 1 tf 80% Vdd 15pF (including probe and fixture capacitance) 2 50% 20% Vdd High Pulse (TH) Low Pulse (TL) Period Vdd 1k OE/NC Function Figure 2. Test Circuit Figure 3. Waveform Note: 8. Duty Cycle is computed as Duty Cycle = TH/Period. Timing Diagrams u 90% Vdd Vdd Vdd 50% Vdd T_start Pin 4 Voltage [9] No Glitch during start up OE Voltage T_oe CLK Output CLK Output HZ HZ T_start: Time to start from power-off T_oe: Time to re-enable the clock output Figure 4. Startup Timing (OE Mode) Figure 5. OE Enable Timing (OE Mode Only) Vdd OE Voltage 50% Vdd T_oe CLK Output HZ T_oe: Time to put the output in High Z mode Figure 6. OE Disable Timing (OE Mode Only) Note: 9 SiT8924 has “no runt” pulses and “no glitch” output during startup or resume. Rev. 1.01 Page 3 of 12 www.sitime.com SiT8924 Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Performance Plots[10] 1.8 V 2.5 V 2.8 V 3V DUT 1 DUT 2 DUT 3 DUT 4 DUT 5 DUT 6 DUT 7 DUT 8 DUT 9 DUT 10 25 3.3 V 20 6.0 15 Frequency (ppm) Idd (mA) 5.5 5.0 4.5 4.0 10 ) m 5 p p ( y 0 c n e u q re ‐5 F ‐10 ‐15 3.5 ‐20 3.0 0 20 40 60 80 100 ‐25 ‐55 Frequency (MHz) 2.5 V 2.8 V ‐15 5 25 45 65 85 105 125 Tem p er atur e(°C) ( C) Temperature Figure 7. Idd vs Frequency 1.8 V ‐35 3.0 V Figure 8. Frequency vs Temperature 1.8 V 3.3 V 2.5 V 2.8 V 3.0 V 3.3 V 55 4.0 53 3.0 Duty cycle (%) RMS period jitter (ps) 54 3.5 2.5 2.0 1.5 1.0 52 51 50 49 48 47 0.5 46 0.0 0 20 40 60 80 45 100 0 20 40 Frequency (MHz) Figure 9. RMS Period Jitter vs Frequency 2.5 V 2.8 V 3.0 V 1.8 V 3.3 V 2.5 2.5 2.0 2.0 1.5 1.0 100 2.5 V 2.8 V 3.0 V 3.3 V 1.5 1.0 0.5 0.5 0.0 0.0 -55 -35 -15 5 25 45 65 85 105 125 Temperature (°C) -55 -35 -15 5 25 45 65 85 105 125 Temperature (°C) Figure 11. 20%-80% Rise Time vs Temperature Rev. 1.01 80 Figure 10. Duty Cycle vs Frequency Fall time (ns) Rise time (ns) 1.8 V 60 Frequency (MHz) Figure 12. 20%-80% Fall Time vs Temperature Page 4 of 12 www.sitime.com SiT8924 Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Performance Plots[10] 2.5 V 2.8 V 3.0 V 3.3 V 1.8 V 2.5 V 2.8 V 3.0 V 3.3 V 1 0.9 0.8 IPJ (ps) IPJ (ps) 1.8 V 2 1.9 1.8 1.7 )s 1.6 (p J  1.5 P I 1.4 1.3 1.2 1.1 1 )s 0.7 p  (J P I 0.6 0.5 0.4 0.3 10 30 50 70 90 110 10 Frequency (MHz) Frequency (MHz) 30 50 70 90 110 Frequency (MHz) Frequency (MHz) Figure 13. RMS Integrated Phase Jitter Random (12 kHz to 20 MHz) vs Frequency[11] Figure 14. RMS Integrated Phase Jitter Random (900 kHz to 7.5 MHz) vs Frequency[11] Notes: 10. All plots are measured with 15 pF load at room temperature, unless otherwise stated. 11. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies up to 40 MHz. Rev. 1.01 Page 5 of 12 www.sitime.com SiT8924 Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Programmable Drive Strength The SiT8924 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are: The SiT8924 can support up to 60 pF in maximum capacitive loads with drive strength settings. Refer to the Rise/Tall Time Tables (Table 7 to 11) to determine the proper drive strength for the desired combination of output load vs. rise/fall time SiT8924 Drive Strength Selection • Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time. • Improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time. • Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. For more detailed information about rise/fall time control and drive strength selection, see the SiTime Application Notes section: http://www.sitime.com/support/application-notes. Tables 7 through 11 define the rise/fall time for a given capacitive load and supply voltage. EMI Reduction by Slowing Rise/Fall Time Figure 15 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to near-triangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period. 4. The left-most column represents the part number code for the corresponding drive strength.   2. Select the capacitive load column that matches the application requirement (5 pF to 60 pF) 3. Under the capacitive load column, select the desired rise/fall times. 5. Add the drive strength code to the part number for ordering purposes. Calculating Maximum Frequency Based on the rise and fall time data given in Tables 7 through 11, the maximum frequency the oscillator can operate with guaranteed full swing of the output voltage over temperature can be calculated as follows: trise=0.05 trise=0.1 trise=0.15 trise=0.2 10 0 Harmonic amplitude (dB) 1. Select the table that matches the SiT8924 nominal supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V). M a x F re q u e n c y = trise=0.25 trise=0.3 trise=0.35 trise=0.4 trise=0.45 -10 -20 where Trf_20/80 is the typical value for 20%-80% rise/fall time. -30 Example 1 -40 -50 Calculate fMAX for the following condition: -60 -70 -80 1 5 x T rf_ 2 0 /8 0 1 3 5 7 9 11 Harm onic num ber Figure 15. Harmonic EMI reduction as a Function of Slower Rise/Fall Time Jitter Reduction with Faster Rise/Fall Time Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. Refer to the Rise/Fall Time Tables (Table 7 to Table 11) to determine the proper drive strength. • Vdd = 1.8V (Table 7) • Capacitive Load: 30 pF • Desired Tr/f time = 3 ns (rise/fall time part number code = E) Part number for the above example: SiT8924AIE12-18E-66.666660 Drive strength code is inserted here. Default setting is “-” High Output Load Capability The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3V SiT8924 device with default drive strength setting, the typical rise/fall time is 1ns for 15 pF output load. The typical rise/fall time slows down to 2.6 ns when the output load increases to 45 pF. One can choose to speed up the rise/fall time to 1.83 ns by then increasing the drive strength setting on the SiT8924. Rev. 1.01 Page 6 of 12 www.sitime.com SiT8924 Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Rise/Fall Time (20% to 80%) vs CLOAD Tables Table 7. Vdd = 1.8V Rise/Fall Times for Specific CLOAD Table 8. Vdd = 2.5V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R  B T E U F or "‐": default 6.16 3.19 2.11 1.65 0.93 0.78 0.70 0.65 11.61 6.35 4.31 3.23 1.91 1.66 1.48 1.30 22.00 11.00 7.65 5.79 3.32 2.94 2.64 2.40 31.27 16.01 10.77 8.18 4.66 4.09 3.68 3.35 39.91 21.52 14.47 11.08 6.48 5.74 5.09 4.56 L A R  B T E or "‐": default U F  4.13 2.11 1.45 1.09 0.62 8.25 4.27 2.81 2.20 1.28 12.82 7.64 5.16 3.88 2.27 21.45 11.20 7.65 5.86 3.51 27.79 14.49 9.88 7.57 4.45 0.54 0.43 0.34 1.00 0.96 0.88 2.01 1.81 1.64 3.10 2.79 2.54 4.01 3.65 3.32 Table 9. Vdd = 2.8V Rise/Fall Times for Specific CLOAD Table 10. Vdd = 3.0V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R  B T 3.77 1.94 1.29 0.97 0.55 7.54 3.90 2.57 2.00 1.12 12.28 7.03 4.72 3.54 2.08 19.57 10.24 7.01 5.43 3.22 25.27 13.34 9.06 6.93 4.08 E or "‐": default U F 0.44 0.34 0.29 1.00 0.88 0.81 1.83 1.64 1.48 2.82 2.52 2.29 3.67 3.30 2.99 L A R  B T or "‐": default E U F 3.60 1.84 1.22 0.89 0.51 0.38 0.30 0.27 7.21 3.71 2.46 1.92 1.00 0.92 0.83 0.76 11.97 6.72 4.54 3.39 1.97 1.72 1.55 1.39 18.74 9.86 6.76 5.20 3.07 2.71 2.40 2.16 24.30 12.68 8.62 6.64 3.90 3.51 3.13 2.85 Table 11. Vdd = 3.3V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R  B 3.39 1.74 1.16 0.81 6.88 3.50 2.33 1.82 11.63 6.38 4.29 3.22 17.56 8.98 6.04 4.52 23.59 12.19 8.34 6.33 T or "‐": default E U F 0.46 0.33 0.28 0.25 1.00 0.87 0.79 0.72 1.86 1.64 1.46 1.31 2.60 2.30 2.05 1.83 3.84 3.35 2.93 2.61 Rev. 1.01 Page 7 of 12 www.sitime.com SiT8924 Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Pin 1 Configuration Options (OE or NC) Pin 1 of the SiT8924 can be factory-programmed to support two modes: Output Enable (OE) or No Connect (NC). is enabled as shown in the waveform captures in Figure 16 and Figure 17. Output Enable (OE) Mode In the OE mode, applying logic low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the output is typically enabled in
SIT8924AA-72-33E-24.545450
物料型号:SiT8924

器件简介: - 符合AEC-Q100标准的汽车级振荡器,工作温度范围从-55°C到125°C。 - 提供1 MHz至110 MHz的频率,精确到小数点后六位。

引脚分配: - 1号引脚:OE/NC(Output Enable或No Connect),用于使能或禁用输出。 - 2号引脚:GND(电源地)。 - 3号引脚:OUT(输出),振荡器输出。 - 4号引脚:VDD(电源),供电电压。

参数特性: - 供电电压:1.8V或2.25V至3.63V。 - 优秀的总频率稳定性,低至±25 ppm。 - 行业最佳的g-sensitivity(重力敏感度)为0.1 PPB/G。 - 低功耗,典型值为3.8 mA(在1.8V下)。 - LVCMOS/LVTTL兼容的输出。

功能详解: - 适用于汽车、极端温度和其他高可靠性电子产品。 - 包括娱乐系统、碰撞检测设备和车内网络。 - 动力传动控制。

应用信息: - 适用于汽车电子、极端温度环境和其他高可靠性要求的电子设备。

封装信息: - 行业标准封装尺寸:2.0 x 1.6 mm、2.5 x 2.0 mm、3.2 x 2.5 mm、5.0 x 3.2 mm、7.0 x 5.0 mm。
SIT8924AA-72-33E-24.545450 价格&库存

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