SIT9025AAR71H18EA24.000000

SiT9025 ADVANCED AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator Features             Applications Spread spectrum for EMI reduction  Wide spread % option  Center spread: from ±0.125% to ±1%, ±0.125% step size  Down spread: -0.25% to -2% with -0.25% step size  Spread profile option: Triangular, Hershey-kiss, Random Programmable rise/fall time for EMI reduction: 8 options, 0.25 to 40 ns Any frequency between 1 MHz and 150 MHz accurate to 6 decimal places 100% pin-to-pin drop-in replacement to quartz-based XO’s Excellent total frequency stability as low as ±20 ppm Operating temperature from -55°C to 125°C. Low power consumption of 4.0 mA typical at 1.8V Pin1 modes: Standby, output enable, or spread disable Fast startup time of 5 ms LVCMOS output Industry-standard packages  QFN: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5 mm2 RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free    ADAS camera ADAS ECU High speed serial link Electrical Specifications Table 1. Electrical Characteristics All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25°C and 3.3V supply voltage. Parameters Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 1 – 150 MHz Frequency Stability and Aging Frequency Stability F_stab -20 – +20 ppm -25 – +25 ppm – +50 ppm -50 Inclusive of initial tolerance at 25°C, 1st year aging at 25°C, and variations over operating temperature, rated power supply voltage. Spread = Off. Operating Temperature Range Operating Temperature Range T_use -40 – +85 °C Industrial, AEC-Q100 Grade 3 -40 – +105 °C Extended Industrial, AEC-Q100 Grade 2 -40 – +125 °C Automotive, AEC-Q100 Grade 1 -55 – +125 °C Extended Automotive, AEC-Q100 Supply Voltage and Current Consumption Supply Voltage Current Consumption Vdd Idd OE Disable Current I_OD Standby Current I_std Rev 0.3 1.62 1.8 1.98 V 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.7 3.0 3.3 V 2.97 3.3 3.63 V 2.25 – 3.63 V – 6.5 9.0 mA No load condition, f = 148.5 MHz, Vdd = 2.5V to 3.3V – 5.5 7.0 mA – 5.5 – mA – 5.1 – mA No load condition, f = 148.5 MHz, Vdd = 1.8V f = 148.5 MHz, Vdd = 2.5V to 3.3V, OE = GND, Output in highZ state f = 148.5 MHz, Vdd = 1.8V, OE = GND, Output in high-Z state – 2.6 – µA ST = GND, Vdd = 2.5V to 3.3V, Output is weakly pulled down – 0.9 – µA ST = GND, Vdd = 1.8V, Output is weakly pulled down April 6, 2018 www.sitime.com SiT9025 1 to 141 MHz EMI Reduction Oscillator Table 1. Electrical Characteristics (continued) Parameters Symbol Min. Typ. Max. Unit Condition LVCMOS Output Characteristics Duty Cycle Rise/Fall Time DC 45 – 55 % Tr, Tf – 1.3 2.5 ns – – 2 ns Vdd =1.8V, 20% - 80%, default derive strength Vdd = 2.25V - 3.63V, 20% - 80%, default derive strength Output High Voltage VOH 90% – – Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V) IOH = -2 mA (Vdd = 1.8V) Output Low Voltage VOL – – 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V) IOL = 2 mA (Vdd = 1.8V) Input High Voltage VIH 70% – – Vdd Pin 1, OE or ST Input Low Voltage VIL – – 30% Vdd Pin 1, OE or ST Input Pull-up Impedance Z_in – 87 – kΩ Pin 1, OE logic high or logic low, or ST logic high – 8 – MΩ Pin 1, ST logic low T_start – – 5 ms Measured from the time Vdd reaches its rated minimum value T_oe – – 215 ns f = 148.5 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles Input Characteristics Startup and Resume Timing Startup Time Enable/Disable Time Resume Time T_resume – – 5 ms Measured from the time ST pin crosses 50% threshold Spread Enable Time T_sde – – 4 µs Measured from the time SD pin crosses 50% threshold Spread Disable Time T_sdde – – 50 µs Measured from the time SD pin crosses 50% threshold Jitter Cycle-to-cycle jitter T_ccj – 10.5 – ps f = 148.5 MHz, Vdd = 2.5 to 3.3V, Spread = ON( or OFF) – 12.5 – ps f = 148.5 MHz, Vdd = 1.8V, Spread = ON( or OFF) Table 2. Spread Spectrum %[1] Table 3. Spread Profile[2] Ordering Code Center Spread (%) Down Spread (%) Spread Profile A ±0.125 -0.25 Hershey-kiss B ±0.250 -0.50 Random C ±0.390 -0.78 D ±0.515 -1.04 E ±0.640 -1.29 F ±0.765 -1.55 G ±0.905 -1.84 H ±1.030 -2.10 I ±1.155 -2.36 J ±1.280 -2.62 K ±1.420 -2.91 L ±1.545 -3.18 M ±1.670 -3.45 N ±1.795 -3.71 O ±1.935 -4.01 P ±2.060 -4.28 Triangular Notes: 1. Contact SiTime for availability of these spread options at -40 to 105°C, -40 to 125°C or -55 to 125°C temperature ranges. 2. In both Triangular and Hershey-kiss profiles, modulation rate is employed with a frequency of ~31.25 kHz. In random profile, modulation rate is ~ 8.6 kHz Rev. 0.3 Page 2 of 7 www.sitime.com SiT9025 1 to 141 MHz EMI Reduction Oscillator Table 4. Pin Description Pin 1 Symbol Output Enable OE / ST / NC / SD Top View Functionality [3] H : specified frequency output L: output is high impedance. Only output driver is disabled. OE / / NC / SD 1 4 VDD 2 3 OUT [3] Standby H : specified frequency output L: output is low (week pull down). Device goes to sleep mode. Supply current reduced to I_std. No Connect Pin1 has no function (Any voltage between 0 and Vdd or Open) Spread Disable H: Spread = ON L: Spread = OFF 2 GND Power Electrical ground 3 OUT Output Oscillator output 4 VDD Power Power supply voltage[4] GND Figure 1. Pin Assignments Notes: 3. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option. 4. A capacitor of value 0.1 µF or higher between Vdd and GND is required. Table 5. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameter Min. Max. Unit Storage Temperature -65 150 °C Vdd -0.5 4 V Electrostatic Discharge – 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C Junction Temperature[5] – 150 °C Note: 5. Exceeding this temperature for extended period of time may damage the device. Table 6. Maximum Operating Junction Temperature[6] Max Operating Temperature (ambient) Maximum Operating Junction Temperature 70°C 80°C 85°C 95°C Note: 6. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. Table 7. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle Solderability Moisture Sensitivity Level Rev. 0.3 JESD22, Method A104 MIL-STD-883F, Method 2003 MSL1 @ 260°C Page 3 of 7 www.sitime.com SiT9025 1 to 141 MHz EMI Reduction Oscillator Timing Diagrams 90% Vdd Vdd Vdd 50% Vdd T_start Pin 4 Voltage [7] No Glitch during start up T_resume ST Voltage CLK Output CLK Output HZ HZ T_start: Time to start from power-off T_resume: Time to resume from ST Figure 1. Startup Timing Figure 2. Standby Resume Timing (ST Mode Only) Vdd Vdd 50% Vdd OE Voltage 50% Vdd T_oe OE Voltage T_oe CLK Output CLK Output HZ HZ T_oe: Time to re-enable the clock output Figure 3. OE Enable Timing (OE Mode Only) T_oe: Time to put the output in High Z mode Figure 4. OE Disable Timing (OE Mode Only) Vdd SD Voltage 50% Vdd 50% Vdd T_sde Modulation period = 32µs (31.25kHz) Frequency Deviation (%) T_sdde Frequency Deviation (%) SD Voltage Vdd Time (s) Time (s) Figure 5. SD Enable Timing (SD Mode Only) Figure 6. SD Diable Timing (SD Mode Only) Note: 7. SiT9025 has “no runt” pulses and “no glitch” output during startup or resume. Rev. 0.3 Page 4 of 7 www.sitime.com SiT9025 1 to 141 MHz EMI Reduction Oscillator Rise/Fall Time (20% to 80%) vs CLOAD Tables Table 8. Vdd = 1.8V Rise/Fall Times for Specific CLOAD Table 9. Vdd = 2.5V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R B T E U F or "‐": default 6.16 3.19 2.11 1.65 0.93 0.78 0.70 0.65 11.61 6.35 4.31 3.23 1.91 1.66 1.48 1.30 22.00 11.00 7.65 5.79 3.32 2.94 2.64 2.40 31.27 16.01 10.77 8.18 4.66 4.09 3.68 3.35 39.91 21.52 14.47 11.08 6.48 5.74 5.09 4.56 L A R B T E or "‐": default U F 4.13 2.11 1.45 1.09 0.62 0.54 0.43 0.34 8.25 4.27 2.81 2.20 1.28 1.00 0.96 0.88 12.82 7.64 5.16 3.88 2.27 2.01 1.81 1.64 21.45 11.20 7.65 5.86 3.51 3.10 2.79 2.54 27.79 14.49 9.88 7.57 4.45 4.01 3.65 3.32 Table 10. Vdd = 2.8V Rise/Fall Times for Specific CLOAD Table 11. Vdd = 3.0V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ Rise/Fall Time Typ (ns) Drive Strength \ CLOAD L A R B T 5 pF 3.77 1.94 1.29 0.97 0.55 15 pF 7.54 3.90 2.57 2.00 1.12 30 pF 12.28 7.03 4.72 3.54 2.08 45 pF 19.57 10.24 7.01 5.43 3.22 60 pF 25.27 13.34 9.06 6.93 4.08 E or "‐": d efault U F 0.44 0.34 0.29 1.00 0.88 0.81 1.83 1.64 1.48 2.82 2.52 2.29 3.67 3.30 2.99 Drive Strength \ CLOAD L A R B T or "‐": d efau lt E U F 5 pF 3.60 1.84 1.22 0.89 0.51 0.38 0.30 0.27 15 pF 7.21 3.71 2.46 1.92 1.00 0.92 0.83 0.76 30 pF 11.97 6.72 4.54 3.39 1.97 1.72 1.55 1.39 45 pF 18.74 9.86 6.76 5.20 3.07 2.71 2.40 2.16 60 pF 24.30 12.68 8.62 6.64 3.90 3.51 3.13 2.85 Table 12. Vdd = 3.3V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Drive Strength \ CLOAD L A R B 5 pF 3.39 1.74 1.16 0.81 15 pF 6.88 3.50 2.33 1.82 30 pF 11.63 6.38 4.29 3.22 45 pF 17.56 8.98 6.04 4.52 60 pF 23.59 12.19 8.34 6.33 T or "‐": d efau lt E U F 0.46 0.33 0.28 0.25 1.00 0.87 0.79 0.72 1.86 1.64 1.46 1.31 2.60 2.30 2.05 1.83 3.84 3.35 2.93 2.61 Rev. 0.3 Page 5 of 7 www.sitime.com SiT9025 1 to 141 MHz EMI Reduction Oscillator Dimensions and Patterns Package Size – Dimensions (Unit: mm)[8] Recommended Land Pattern (Unit: mm)[9] 2.0 x 1.6 x 0.75 mm 2.5 x 2.0 x 0.75 mm 2.5 ± 0.05 #4 1.5 1.1 #3 0.5 #2 #2 #1 1.0 YXXXX #1 1.9 1.00 #3 2.0 ± 0.05 #4 0.75 ± 0.05 0.75 1.1 3.2 x 2.5 x 0.75 mm 3.2 ± 0.05 1.9 #1 1.2 #2 0.75 ± 0.05 #2 #4 0.9 #3 0.7 YXXXX #1 2.2 2.1 #3 2.5 ± 0.05 #4 0.9 1.4 Notes: 8. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device. 9. A capacitor of value 0.1 µF or higher between Vdd and GND is required. Rev. 0.3 Page 6 of 7 www.sitime.com SiT9025 1 to 141 MHz EMI Reduction Oscillator Ordering Information The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number Generator. SiT9025AA -71-18EA2 5 .000625D Part Family “SiT9025” Packing Method “D”: 8 mm Tape & Reel, 3ku reel “E”: 8 mm Tape & Reel, 1ku reel Blank for Bulk Revision Letter “A” is the revision Frequency Temperature Range “I” Industrial -40ºC to 85ºC “E” Ext. Industrial -40ºC to 105ºC “A” Automotive -40ºC to 125ºC “M” Ext. Automotive -55ºC to 125ºC 1.000000 to 150.000000 MHz [10] Spread Percentage “-” no spread ”A” “B” “C” “D” “E” “F” “G” “H” “I” “J” “K” “L” “M” “N” “O” “P” Output Drive Strength “–” Default (datasheet limits) See Tables 7 to 11 for rise/fall times “L” “T” “A” “E” “R” “U” “B” “F” Package Size “7” 2.0 x 1.6 mm “1” 2.5 x 2.0 mm “2” 3.2 x 2.5 mm Frequency Stability “1” for ±20 ppm “2” for ±25 ppm “3” for ±50 ppm Rev. 0.3 Center: ±0.125, ±0.250, ±0.390, ±0.515, ±0.640, ±0.765, ±0.905, ±1.030, ±1.155, ±1.280, ±1.420, ±1.545, ±1.670, ±1.795, ±1.935, ±2.060, Down: -0.25 -0.50 -0.78 -1.04 -1.29 -1.55 -1.84 -2.10 -2.36 -2.62 -2.91 -3.18 -3.45 -3.71 -4.01 -4.28 Feature Pin “E” for Output Enable “S” for Standby “N” for No Connect “D” for Spread Disablel Spread Type and Profile “-” Center spread & Triangular (Default) “H” Center spread & Hershey Kiss “R” Center spread & Random “D” Down spread & Triangular “G” Down spread & Hershey Kiss “Q” Down spread & Random Notes: 10. for for for for for for for for for for for for for for for for Supply Voltage “18” for 1.8V ±10% “25” for 2.5V ±10% “28” for 2.8V ±10% “30” for 3.0V ±10% “33” for 3.3V ±10% “XX” for 2.5V -10% to 3.3V +10% Contact SiTime for availability of these spread options at -40 to 105°C, -40 to 125°C or -55 to 125°C temperature ranges Page 7 of 7 www.sitime.com