SLVU2.8-4TR

SLVU2.8-4 Technical Data Data Sheet Draft, Rev. - SLVU2.8-4 Low Voltage TVS Diode Array Description The SLVU2.8-4 TVS diode is a low capacitance TVS(Transient Voltage Suppressor) device designed to protect low voltage components such as Ethernet transceivers, laser diodes, ASICs, and high-speed RAM from transients caused by electrostatic discharge(ESD), cable discharge events(CDE), lightning and other induced voltage surges. The SLVU2.8-4 is in an SO-8 package and can be used to protect two high-speed line pair. The “flowthru”design minimizes trace inductance and reduces voltage overshoot associated with ESD events. The low clamping voltage of the SLVU2.8-4 minimizes the stress on the protected IC. SO-8 Circuit Diagram Mechanical Characteristics     Applications Features       SO-8 package Marking: Part number, date code Packaging: Tape and Reel Molding compound flammability rating: UL 94V-0 600 Watts peak pulse power(tp=8/20us) Transient protection for high speed data lines IEC 61000-4-2(ESD)±15KV(air),±8KV(contact) IEC 61000-4-4(EFT) 40A (5/50ns) IEC 61000-4-5(Lightning) 30A (8/20us) Low capacitance Low leakage current Low operating and clamping voltages Protects two line pairs(four lines)        10/100 Ethernet WAN/LAN Equipment Switching Systems Desktops,Servers and Notebooks Instrumentation Analog Inputs Base Stations Ordering Information: Device Package Shipping SLVU2.8-4 SO-8(Pb-Free) 3000pcs/ reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification.  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SLVU2.8-4 Technical Data Data Sheet Draft, Rev. - Maximum Ratings Characteristics Symbol Max. Units Peak Pulse Power (tp=8/20us) PPK 600 Watts Peak Pulse Current (tp=8/20us) IPP 30 A ESD per IEC61000-4-2 (air) ESD per IEC61000-4-2 (contact) 25 VESD KV 15 Lead Soldering Temperature TL 260(10 seconds) ℃ Operating Temperature TJ -55 to +125 ℃ TSTG -55 to +150 ℃ Storage Temperature Electrical Characteristics Characteristics Reverse Stand-Off Voltage Symbol Condition Min. Typ. VRWM Max. 2.8 Units V Punch-Through Voltage VPT IPT=2uA 3.0 V Snap-Back Voltage VSB ISB=50mA 2.8 V Reverse Leakage Current IR VRWM=2.8V,T=25℃ (Each Line) Clamping Voltage VC Clamping Voltage 0.01 1 uA IPP=5A, tp=8/20us (Each Line) 8.5 V VC IPP=10A, tp=8/20us (Each Line) 12 V Clamping Voltage VC IPP=30A, tp=8/20us (Each Line) 20 V Junction Capacitance Cj VR=0V, f=1MHz (Each Line) 5  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  pF SLVU2.8-4 Technical Data Data Sheet Draft, Rev. - Ratings and Characteristics Curves  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SLVU2.8-4 Technical Data Data Sheet Draft, Rev. - Circuit Diagram The SLVU2.8-4 is designed to protect four data lines of sensitive components from damage and latch-up which may result from transients.Data line I/Os are connected at pin 1 and 2, 3 and 4, 5and 6, 7 and 8. The SLVU2.8-4 is also designed to protect two high-speed line pair. The line pairs enter at pins 1 and 2, pin 3 and 4, and exit at pin 8 and 7, pin 6 and 5. Mechanical Dimensions Carrier Tape Specification Marking Diagram Where XXXXX is YYWWL SLVU2.8-4 YY WW L = Part Number = Year = Week = Lot Number  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SLVU2.8-4 Technical Data Data Sheet Draft, Rev. DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 