TA9410E

TA9410E Preliminary TA9410E – 25W CW, 50V, 20 - 3000MHz GaN Power Transistor 1.0 Features ● Small signal gain @ 1000MHz: 20dB ● Gain at P3dB @ 1000MHz: 17dB ● P3dB @ 1000MHz: 44dBm ● PAE @ P3dB @ 1000MHz: 57% ● 50V Typical operation ● Operating frequency: 20MHz to 3.0GHz Figure 1.1 Device Image (8 Pin 6×5×0.8mm QFN Package) 2.0 Applications ● Private mobile radio handsets ● Public safety radios ● Cellular infrastructure ● Military radios RoHS/REACH/Halogen Free Compliance 3.0 Description The TA9410E is a broadband GaN power transistor capable of delivering 25W CW from 20MHz to 3.0GHz frequency band. The input and output can be matched for best power and efficiency for the desired band. The TA9410E is packaged in a compact, low cost Quad Flat No lead (QFN) 5x6x0.8mm, 8 leads plastic package. Figure 3.1 Function Block Diagram (Top View) 4.0 Ordering Information Table 4.1 Ordering Information Base Part Number TA9410E Package Type Form Qty Reel Diameter 8 Pin 5×6×0.8mm Tape and Reel 1000 13” (330mm) QFN Tuned Evaluation Board, 20 - 525MHz Tuned Evaluation Board, 20 - 1000MHz Revision 1.1 - 2021-03-18 http://www.tagoretech.com Reel Width Orderable Part Number 18mm TA9410EMTRPBF TA9410E-EVB-A TA9410E-EVB-B Page 1 of 19 TA9410E Preliminary 5.0 Pin Description Table 5.1 Pin Definition Pin Number 1, 4, 5, 8 2, 3 6, 7 9[1] Pin Name NC VGG & RFIN VDD & RFOUT Paddle/Slug Description No internal connection, Can be grounded Gate voltage and RF input Drain voltage and RF output Ground Note: [1] The backside ground slug of the device must be grounded directly to the ground plane through multiple vias to ensure proper operation. Adequate heatsinking required. 6.0 Absolute Maximum Ratings Table 6.1 Absolute Maximum Ratings @TA=+25°C Unless Otherwise Specified Parameter Symbol Value Unit Breakdown voltage VDS +150 V Gate voltage VGS -10 to +2.0 V Drain current IDS 3.0 A Gate current IGS 5.2 mA Power dissipation CW Pdiss 28 W RF input power CW, 20-1000MHz RFIN 29 dBm Storage Temperature Range Tst -55 to +150 °C Operating Temperature Range Top -40 to +85 °C Maximum Junction Temperature TJ +225 °C Thermal Resistance (junction-to-case) – Bottom side RθJC 5.0 °C/W Soldering Temperature TSOLD 260 °C Human Body Model (HBM) Level 1A 250 to