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PGSMAJ20A F3G

PGSMAJ20A F3G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    SMA

  • 描述:

    DIODE TVS 400W SMA

  • 详情介绍
  • 数据手册
  • 价格&库存
PGSMAJ20A F3G 数据手册
PGSMAJ5.0A - PGSMAJ100A Taiwan Semiconductor 400W, 5V - 100V Surface Mount Transient Voltage Suppressor FEATURES KEY PARAMETERS ● ● ● ● ● ● Low profile package Ideal for automated placement Photo Glass passivated junction Excellent clamping capability Typical IR less than 1μA above 10V 400 watts peak pulse power capability with a 10 / 1000 μs waveform (300W above 78V) ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 5 - 100 V VBR 6.8 - 117 V TJ MAX 175 °C Package DO-214AC (SMA) Configuration Single die APPLICATIONS ● ● ● ● Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA ● ● ● ● ● ● ● ● ● DO-214AC (SMA) Case: DO-214AC (SMA) Molding compound meets UL 94V-0 flammability rating Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.06 g (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Peak power dissipation at TA=25°C, td=1ms (Note 1) Steady state power dissipation Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load Maximum instantaneous forward voltage at 25 A for unidirectional only Operating junction temperature range Storage temperature range SYMBOL VALUE UNIT PPPM 400 W PD 1 W IFSM 40 A VF 3.5 V TJ -55 to +175 °C TSTG -55 to +175 °C Notes: 1. Non-repetitive Current Pulse Per Fig.3 and derated above TA=25°C Per Fig.2. Rating is 300 W for VWM > 78 V Devices for Bi-directional Applications 1. For Bi-directional use CA suffix (e.g. PGSMAJ10CA). 2. Electrical Characteristics Apply in Both Directions 1 Version:A1707 PGSMAJ5.0A - PGSMAJ100A Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT RӨJL RӨJA RӨJC 29 120 31 °C/W °C/W °C/W Junction-to-lead thermal resistance per diode Junction-to-ambient thermal resistance per diode Junction-to-case thermal resistance per diode Thermal Performance Note: Units mounted on recommended PCB (5.0mm x 5.0mm Cu pad test board) ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Part number Marking code PGSMAJ5.0A PGSMAJ6.0A PGSMAJ6.5A PGSMAJ7.0A PGSMAJ7.5A PGSMAJ8.0A PGSMAJ8.5A PGSMAJ9.0A PGSMAJ10A PGSMAJ11A PGSMAJ12A PGSMAJ13A PGSMAJ14A PGSMAJ15A PGSMAJ16A PGSMAJ17A PGSMAJ18A PGSMAJ20A PGSMAJ22A PGSMAJ24A PGSMAJ26A PGSMAJ28A PGSMAJ30A PGSMAJ33A PGSMAJ36A PGSMAJ40A PGSMAJ43A PGSMAJ45A PGSMAJ48A PGSMAJ51A PGSMAJ54A PGSMAJ58A PGSMAJ60A PGSMAJ64A PGSMAJ70A PGSMAJ75A PGSMAJ78A PGSMAJ85A PGSMAJ90A PGSMAJ100A PAE PAG PAK PAM PAP PAR PAT PAV PAX PAZ PBE PBG PBK PBM PBP PBR PBT PBV PBX PBZ PCE PCG PCK PCM PCP PCR PCT PCV PCX PCZ PRE PRG PRK PRM PRP PRR PRT PRV PRX PRZ Breakdown voltage VBR@IT (V) (Note 1) Min. 6.4 6.67 7.22 7.78 8.33 8.89 9.44 10.0 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 47.8 50.0 53.3 56.7 60.0 64.4 66.7 71.1 77.8 83.3 86.7 94.4 100 111 Max. 7.00 7.37 7.98 8.60 9.21 9.83 10.40 11.10 12.30 13.50 14.70 15.90 17.20 18.50 19.70 20.90 22.10 24.50 26.90 29.50 31.90 34.40 36.8 40.6 44.2 49.1 52.8 55.3 58.9 62.7 66.3 71.2 73.7 78.6 86 92.1 95.8 104 111 123 Test current IT (mA) Working stand-off voltage VWM (V) Maximum reverse leakage current IR@VWM (µA) (Note 1) Maximum peak impulse current IPPM (A) tp =10/1000 μs Maximum clamping voltage VC@IPPM (V) tp =10/1000 μs 10 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 5 6 6.5 7 7.5 8 8.5 9 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 800 800 500 200 100 50 10 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 43.5 38.8 35.7 33.3 31.0 29.4 27.8 26.0 23.5 22.0 20.1 18.6 17.2 16.4 15.4 14.5 13.7 12.3 11.3 10.3 9.5 8.8 8.3 7.5 6.9 6.2 5.8 5.5 5.2 4.9 4.6 4.3 4.1 3.9 3.5 3.3 3.2 2.2 2.1 1.9 9.2 10.3 11.2 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103 113 121 126 137 146 162 Notes: 1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2 2. Mounted on 5 x 5mm copper pads to each terminal 3. Lead temperature at TL=75°C 4. Measure on 8.3ms single half sine-wave duty cycle=4 pulses per minutes maximum 5. Peak pulse power waveform is 10/1000 μs 6. For Bi-directional devices having VR of 10 volts and under, the IR limit is double 2 Version:A1707 PGSMAJ5.0A - PGSMAJ100A Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. SUFFIX(*) PGSMAJxxxx (Note 1) PACKING PACKING CODE CODE SUFFIX H PACKAGE PACKING R3 SMA 1,800 / 7" Plastic reel R2 SMA 7,500 / 13" Paper reel M2 SMA 7,500 / 13" Plastic reel Folded SMA 1,800 / 7" Plastic reel Folded SMA 7,500 / 13" Paper reel F4 Folded SMA 7,500 / 13" Plastic reel E3 Clip SMA 1,800 / 7" Plastic reel E2 Clip SMA 7,500 / 13" Plastic reel F3 G F2 Note : 1. "xxxx" defines voltage from 5.0V (PGSMAJ5.0A) to 100V (PGSMAJ100A) *: Optional available. EXAMPLE EXAMPLE P/N PART NO. PGSMAJ26AHR3G PGSMAJ26A PART NO. PACKING PACKING CODE SUFFIX CODE SUFFIX H R3 G 3 DESCRIPTION AEC-Q101 qualified Green compound Version:A1707 PGSMAJ5.0A - PGSMAJ100A Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Peak Pulse Power Rating Curve Fig.2 Pulse Derating Curve 100 PEAK PULSE POWER (PPPM) OR CURRENT(IPP) DERATING IN PERCENTAGE (%) PPPM, PEAK PULSE POWER (KW) 100 Non-Repetitive Pulse Waveform Shown in Fig.3 TA=25°C 10 PGSMAJ5.0A - PGSMAJ78A 1 PGSMAJ85A - PGSMAJ100A Heat sink 5mm x 5mm Cu pad test board 0.1 0 1 10 100 1000 75 50 25 0 10000 0 25 50 75 100 125 150 175 TJ - INITIAL JUNCTION TEMPERATURE (°C) td - PULSE WIDTH (μs) Fig.3 Clamping Power Pulse Waveform Fig.4 Typical Junction Capacitance 1000 Peak value IPPM PEAK PULSE CURRENT (%) 120 Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM CAPACITANCE (pF) 140 100 Rise time tr=10μs to 100% 80 Half value-IPPM/2 10/1000μs, waveform as defined by R.E.A. 60 PGSMAJ10A 100 PGSMAJ40A 10 40 20 td f=1.0MHz Vsig=50mVp-p 1 0 0 0.5 1 1.5 2 2.5 1 3 10 100 REVERSE VOLTAGE (V) t, TIME (ms) 4 Version:A1707 PGSMAJ5.0A - PGSMAJ100A Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AC (SMA) DIM Unit (mm) Unit (inch) Min Max Min Max A 1.27 1.58 0.050 0.062 B 4.06 4.60 0.160 0.181 C 2.29 2.83 0.090 0.111 D 1.99 2.50 0.078 0.098 E 0.90 1.41 0.035 0.056 F 4.95 5.33 0.195 0.210 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 1.68 0.066 B 1.52 0.060 C 3.93 0.155 D 2.41 0.095 E 5.45 0.215 MARKING DIAGRAM P/N G YW F 5 = Marking Code = Green Compound = Date Code = Factory Code Version:A1707 PGSMAJ5.0A - PGSMAJ100A Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version:A1707
PGSMAJ20A F3G
物料型号:PGSMAJ5.0A - PGSMAJ100A,由台湾半导体生产。

器件简介:这些是表面安装型瞬态电压抑制二极管,具有低轮廓封装,适合自动化放置,光玻璃钝化结,优秀的钳位能力,典型IR小于1μA(10V以上),具有400瓦的峰值脉冲功率能力(10/1000μs波形,78V以上300W)。

引脚分配:文档中未明确指出具体的引脚分配,但根据封装类型DO-214AC (SMA),可以推断出其为单极性二极管。

参数特性:包括工作电压范围5V至100V,最大结温175°C,封装类型为DO-214AC (SMA),单芯片配置。

功能详解:适用于开关电源、适配器、照明应用和板载DC/DC转换器。符合RoHS指令2011/65/EU和WEEE 2002/96/EC,无卤素,符合IEC 61249-2-21标准。

应用信息:适用于开关模式电源供应(SMPS)、适配器、照明应用和板载DC/DC转换器。

封装信息:封装类型为DO-214AC (SMA),符合UL 94V-0阻燃等级,带有后缀"H"的型号表示符合AEC-Q101标准,带有后缀"G"的包装代码表示绿色化合物(无卤素),潮湿敏感度等级为1级,符合J-STD-020标准。

电气规格和热性能参数详细列出了不同型号的VBR、VWM、IR@Vw、IppM和Vc@lppM等参数,以及它们的测试条件和限制。

订购信息提供了不同型号、后缀、包装代码和包装代码后缀的详细说明,以及如何根据这些信息进行订购。

特性曲线图提供了峰值脉冲功率和钳位功率脉冲波形的详细信息。

封装尺寸图提供了DO-214AC (SMA)封装的详细尺寸。
PGSMAJ20A F3G 价格&库存

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