TPC816D C9G

TPC816 SERIES Taiwan Semiconductor 200mW, 4 PIN DIP Phototransistor Photocoupler FEATURES KEY PARAMETERS ● Current transfer ratio (CTR: MIN.80% at IF=5mA, VCE=5V) ● High isolation voltage between input and output (Viso=5000V rms) ● High collector-emitter voltage (VCEO:70V) ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT CTR 80-600 % VCEO 70 V Ptot 200 mW IC 50 mA Viso Package APPLICATIONS ● Programmable controllers ● System appliances, measuring instruments ● Signal transmission between circuits of different potentials and impedances Configuration 5000 Vrms DIP-4 DIP-4M SOP-4 Single Dice MECHANICAL DATA ● Case: DIP-4 , DIP-4M , SOP-4 ● Molding compound: UL flammability classification rating 94V-0 ● Moisture sensitivity level: level 1, per J-STD-020 ● Packing code with suffix "G" means green compound (halogen-free) ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Polarity: Indicated by cathode band 1 Version:B1612 TPC816 SERIES Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL IF PART NUMBER 50 UNIT Peak forward current (Note 1) IFM 1 A Reverse voltage VR 6 V Power dissipation P 70 mW Collector-emitter voltage VCEO 70 V Emitter-collector voltage VECO 6 V Collector current IC 50 mA Collector power dissipation PC 150 mW Total power dissipation Ptot 200 mW Isolation voltage (Note 2) Viso 5000 Vrms Operating temperature Topr -30 to +100 °C Storage temperature Tstg -55 to +125 °C Soldering temperature (Note 3) Tsol 260 °C Forward current Input Output mA Notes: 1. Pulse width≦100ms，Duty ratio：0.001 2. 40 to 60% RH，AC for 1 minute 3. For 10s ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Input Output CONDITIONS TYP MAX UNIT 1.2 1.4 V IF=20mA VF Peak forward voltage IFM=0.5A VFM 3.0 V Reverse current VR=4V IR 10 μA Terminal capacitance V=0, f=1kHz Ct 250 pF Collector dark current saturation voltage Characteristics MIN Forward voltage Current transfer ration (Note 1) Collector-emitter Transfer SYMBOL Isolation resistance Floating capacitance Cut-off frequency VCE=20V,IF=0 ICEO IF=5mA, VCE=5V CTR IF=20mA, IC=1mA VCE(sat) DC500V, 40 to 60%RH V=0, f=1MHz VCE=5V, IC=2mA, RL=100Ω, -3dB RISO 30 80 0.1 10 5x10 -7 10 A 600 % 0.2 V 11 Ω 10 Cf 0.6 fc 80 1.0 pF KHz Response Rise time VCE=2V, IC=2mA, tr 4 18 μs time Fall time RL=100Ω tf 3 18 μs Notes: 1. Classification table of current transfer ratio is shown below 2 Version:B1612 TPC816 SERIES Taiwan Semiconductor RANK TABLE OF CURRENT TRANSFER RATIO, CTR RANK MARK MIN (%) MAX (%) A 80 160 B 130 260 C 200 400 D 300 600 ORDERING INFORMATION PART NO. (Note 1&2) PACKING PACKING CODE CODE SUFFIX TPC816x C9 TPC816Mx C9 TPC816S1x RA PACKAGE PACKING DIP-4 100 / TUBE DIP-4M G (Leads with 0.4" spacing) SOP-4 100 / TUBE 2K / 13" Reel Notes: 1. “x” defines CTR rank from “A” to “D” 2. Whole series with green compound EXAMPLE EXAMPLE P/N PART NO. PACKING CODE TPC816A C9G TPC816A C9 PACKING CODE SUFFIX G 3 DESCRIPTION Green compound Version:B1612 TPC816 SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig. 1 Forward Current vs. Fig.2 Collector Power Dissipation vs. Ambient Temperature Ambient Temperature 200 Collector Power Dissipation, Pc (mW) 60 IF, Instantaneous Forward Current (mA) 50 40 30 20 10 0 150 100 50 0 -30 -15 0 15 30 45 60 75 90 105 120 -30 -15 0 45 60 75 Fig.3 Peak Forward Current vs. Fig.4 Forward Current vs. Duty Ratio Forward Voltage 90 105 120 1000 10000 100 1000 Forward Current IF(mA) Peak Forward Current IFM (mA) 30 Ambient Temperature, Ta (°C) Ambient Temperature, Ta (°C) 100 10 1 0.0001 15 75°C 25°C 50°C 10 0°C 1 -25°C 0.1 0.01 0.001 0.01 0.1 1 0 Duty Ratio 0.5 1 1.5 2 2.5 3 3.5 Forward Voltage VF (V) 4 Version:B1612 TPC816 SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig. 5 Current Transfer Ratio vs. Fig.6 Collector Current vs. Forward Current Collector-Emitter Voltage 200 60 50 160 Collector Current Ic(mA) Current Transfer Ratio (%) 180 140 120 100 80 60 40 20 0 10 25mA 20mA 30 15mA 20 10mA 10 VCE=5V 1 IF=30mA 40 5mA 0 100 0 Forward Current IF(mA) 2 3 4 5 6 7 8 9 Collector-Emitter Voltage VCE(V) Fig.7 Relative Current Transfer Ratio vs. Fig.8 Collector-emitter Saturation Voltage vs Ambient Temperature Ambient Temperature 0.16 150 0.14 IF=5mA VCE=5V Collector-Emitter Saturation Voltage VCE(sat) (A) Relative Current Transfer Ratio (%) 1 100 50 IF=20mA IC=1mA 0.12 0.1 0.08 0.06 0.04 0.02 0 0 -30 0 30 60 90 -30 120 0 30 60 90 120 Ambient Temperature Ta(°C) Ambient Temperature Ta(°C) 5 Version:B1612 TPC816 SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig. 9 Collector Dark Current vs. Ambient Temperature 1.E-04 1.E-05 Load Resistance 1000 VCE=20V Response Time (μs) Collector Dark Current ICEO(A) Fig.10 Response Time vs. 1.E-06 1.E-07 1.E-08 IC=2mA VCE=2V 100 tr tf 10 td 1 ts 1.E-09 1.E-10 0.1 -30 0 30 60 90 0.01 0.1 1 Ambient Temperature Ta(°C) 10 100 Load Resistance RL(kΩ) Fig.11 Frequency Response Fig.12 Collector-Emitter Saturation Voltage vs 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 Collector-Emitter Saturation Voltage VCE(sat) Voltage Gain Av(dB) Forward Current IC=2mA VCE=5V 100Ω 1kΩ RL=10kΩ 0.1 1 10 100 1000 6 5 IF=20mA IC=1mA 4 7mA 3 5mA 2 3mA 1mA 1 IC=0.5mA 0 0 Frequency f(kHz) 2 4 6 8 10 12 14 16 18 20 Forward Current IF(mA) 6 Version:B1612 TPC816 SERIES Taiwan Semiconductor TEST CIRCUIT RESPONSE TIME TEST CIRCUIT FOR FREQUENCY RESPONSE 7 Version:B1612 TPC816 SERIES Taiwan Semiconductor PACKAGE OUTLINE DIMENSION DIP-4 DIM. Min Max A 6.40 6.60 B 4.50 4.70 C 7.90 8.30 D 3.28 3.68 E 2∘ 8∘ F 2.70 2.90 J 0.23 0.26 K 8.86 9.31 L N DIM. 0.50 typ. 2.44 2.64 0.40 typ. Unit(mm) Min Max A 6.40 6.60 B 4.50 4.70 C 7.90 8.30 D 3.28 3.68 F 1.25 typ. G 0.40 typ. J 0.23 0.26 K 9.86 10.46 L 8 1.25 typ. H M DIP-4M (Leads with 0.4" spacing) Unit(mm) 0.50 typ. M 2.44 2.64 N 2.40 2.90 Version:B1612 TPC816 SERIES Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOP-4 DIM. Unit(mm) Min Max A 6.40 6.60 B 4.50 4.70 C 7.90 8.30 D 3.28 3.68 F G 1.25 typ. 0.40 typ. H 0.00 0.20 J 0.90 1.20 K 9.80 10.30 L M 1.25 typ. 2.49 2.69 MARKING Notes： 816: Product type B: CTR rank mark YWW: Date code 9 Version:B1612 TPC816 SERIES Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 10 Version:B1612