TS13005CK C0G

TS13005CK Taiwan Semiconductor High Voltage NPN Transistor FEATURES KEY PERFORMANCE PARAMETERS ● Low spread of dynamic parameters ● High switching speed ● ● Low base drive requirement Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC. Halogen-free according to IEC 61249-2-21 ● PARAMETER VALUE UNIT BVCEO 400 V BVCBO 700 V IC 3 A 0.17 V VCE(SAT) IC=1A, IB=0.2A APPLICATION ● Ballast Lighting ● Charger TO-126 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage @ VBE=0V VCES 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 3 A Collector Peak Current (tp