TSF20L100C

TSF20L100C – TSF20L200C Taiwan Semiconductor 20A, 100V - 200V Trench Schottky Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ high efficiency High forward surge capability Compliant RoHS Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● PARAMETER VALUE UNIT IF 20 A VRRM 100 - 200 V IFSM 100 A TJ MAX 150 °C Package ITO-220AB Configuration Dual dies Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Mounting torque: 0.56 N⋅m maximum Polarity: As marked Weight: 1.70g (approximately) ITO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Repetitive peak reverse voltage VRRM TSF20L 100C TSF20L 100C 100 Reverse voltage, total rms value VR(RMS) 70 PARAMETER SYMBOL Marking code on the device TSF20L 120C TSF20L 120C 120 TSF20L 150C TSF20L 150C 150 84 105 TSF20L UNIT 200C TSF20L 200C 200 V 140 V IF 20 A IFSM 100 A dv/dt 10,000 V/µs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C Forward current Surge peak forward current, 8.3ms single half sine-wave superimposed on rated load Critical rate of rise of off-state voltage 1 Version: C2105 TSF20L100C – TSF20L200C Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 4 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT 0.62 - V 0.68 - V 0.78 - V TSF20L200C 0.81 - V TSF20L100C - 0.86 V - 0.92 V - 0.95 V - 0.98 V 0.55 - V 0.58 - V 0.64 - V TSF20L200C 0.67 - V TSF20L100C 0.64 0.72 V 0.67 0.76 V 0.71 0.80 V 0.74 0.83 V - 100 µA - 15 mA - 10 mA TSF20L100C TSF20L120C TSF20L150C IF = 5A, TJ = 25°C TSF20L120C TSF20L150C Forward voltage per diode (1) IF = 10A, TJ = 25°C TSF20L200C VF TSF20L100C TSF20L120C TSF20L150C IF = 5A, TJ = 125°C TSF20L120C TSF20L150C IF = 10A, TJ = 125°C TSF20L200C Reverse current @ rated VR per (2) diode TSF20L100C TSF20L120C T = 25°C TSF20L150C J TSF20L200C TSF20L100C TSF20L120C T = 125°C TSF20L150C J TSF20L200C IR Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING TSF20LxC ITO-220AB 50 / Tube Notes: 1. “x” defines voltage from 100V(TSF20L100C) to 200V(TSF20L200C) 2 Version: C2105 TSF20L100C – TSF20L200C Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 TSF20L100C 20 CAPACITANCE (pF) 16 12 8 100 TSF20L120C TSF20L150C 10 TSF20L200C 4 0 f=1.0MHz Vsig=50mVp-p 1 50 75 100 125 150 0.1 1 CASE TEMPERATURE (°C) 100 10 TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 100 10 TSF20L100C 10 UF1DLW 1 TJ=150°C TJ=125°C T =125°C J TJ=25°C 0.1 TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.1 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.3 0.4 0.5 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TSF20L120C TJ=150°C 1 TJ=125°C TJ=100°C 0.01 TJ=25°C 0.001 0.0001 10 20 30 40 50 60 70 80 0.7 0.7 0.8 0.9 0.9 1 1.1 1.1 1.2 1.1 1.2 Fig.6 Typical Forward Characteristics 100 0.1 0.5 0.6 FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics 10 100 Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.3 Typical Reverse Characteristics TSF20L100C 10 REVERSE VOLTAGE (V) (A) 25 90 100 100 10 TSF20L120C 10 UF1DLW 1 TJ=150°C TJ=125°C TJ=125°C TJ=25°C 1 TJ=100°C 0.01 Pulse width 300μs 0.1 0.001 0.1 Pulse width 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 3 TJ=25°C 0.1 (A) AVERAGE FORWARD CURRENT (A) 24 0.3 0.4 0.5 0.7 0.9 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) 1.1 1 Version: C2105 TSF20L100C – TSF20L200C Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 20 30 40 50 60 70 80 90 100 TSF20L150C UF1DLW 1 TJ=150°C 10 TJ=125°C TJ=125°C 0.1 TJ=25°C TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.2 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.4 0.4 0.5 0.6 0.6 0.7 0.8 0.8 0.9 1.0 1 1.1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.9 Typical Reverse Characteristics Fig.10 Typical Forward Characteristics 10 TSF20L200C 1 TJ=150°C 0.1 TJ=125°C 0.01 TJ=100°C 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) (A) TJ=150°C 100 10 100 10 TSF20L200C 10 UF1DLW T =150°C 1 J TJ=125°C TJ=125°C 0.1 TJ=25°C TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.2 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.4 0.4 0.5 0.6 0.6 0.8 1.0 0.7 0.8 0.9 1 1.2 1.1 FORWARD VOLTAGE (V) 4 1.2 (A) TSF20L150C INSTANTANEOUS FORWARD CURRENT (A) 10 10 INSTANTANEOUS REVERSE CURRENT (mA) Fig.8 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.7 Typical Reverse Characteristics Version: C2105 1.2 TSF20L100C – TSF20L200C Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AB MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: C2105 TSF20L100C – TSF20L200C Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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