TSF40H200C

TSF40H100C – TSF40H200C Taiwan Semiconductor 40A, 100V - 200V Trench Schottky Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ high efficiency High forward surge capability Compliant RoHS Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● PARAMETER VALUE UNIT IF 40 A VRRM 100 - 200 V IFSM 250 A TJ MAX 150 °C Package ITO-220AB Configuration Dual dies Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Mounting torque: 0.56 N⋅m maximum Polarity: As marked Weight: 1.70g (approximately) ITO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device Repetitive peak reverse voltage VRRM Reverse voltage, total rms value VR(RMS) TSF40H TSF40H TSF40H TSF40H UNIT 100C 120C 150C 200C TSF40H TSF40H TSF40H TSF40H 100C 120C 150C 200C 100 120 150 200 V 70 84 105 140 V IF 40 A IFSM 250 A dv/dt 10,000 V/µs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C Forward current Surge peak forward current, 8.3ms single half sine-wave superimposed on rated load Critical rate of rise of off-state voltage 1 Version: C2105 TSF40H100C – TSF40H200C Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-case thermal resistance SYMBOL TYP UNIT RӨJC 3 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT 0.56 - V 0.60 - V 0.71 - V TSF40H200C 0.75 - V TSF40H100C 0.66 0.72 V 0.74 0.84 V 0.79 0.89 V 0.83 0.93 V 0.48 - V 0.53 - V 0.59 - V TSF40H200C 0.62 - V TSF40H100C 0.59 0.65 V 0.63 0.71 V 0.67 0.77 V 0.70 0.80 V - 500 µA - 150 µA - 45 mA - 15 mA TSF40H100C TSF40H120C TSF40H150C IF = 10A, TJ = 25°C TSF40H120C TSF40H150C Forward voltage per diode (1) IF = 20A, TJ = 25°C TSF40H200C VF TSF40H100C TSF40H120C TSF40H150C IF = 10A, TJ = 125°C TSF40H120C TSF40H150C IF = 20A, TJ = 125°C TSF40H200C TSF40H100C TSF40H120C TSF40H150C Reverse current @ rated VR per TSF40H200C (2) diode TSF40H100C TSF40H120C TSF40H150C TSF40H200C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms TJ = 25°C IR TJ = 125°C ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING TSF40HxC ITO-220AB 50 / Tube Notes: 1. “x” defines voltage from 100V(TSF40H100C) to 200V(TSF40H200C) 2 Version: C2105 TSF40H100C – TSF40H200C Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 TSF40H100C TSF40H120C TSF40H100C-120C 30 TSF40H150C-200C TSF40H150C TSF40H200C 100 10 f=1.0MHz Vsig=50mVp-p 10 0 25 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C TJ=100°C 0.1 0.01 TJ=25°C 0.001 20 30 40 50 60 70 80 90 100 100 10 TSF40H100C UF1DLW 1 10 TJ=150°C TJ=125°C TJ=125°C TJ=25°C 0.1 1 TJ=25°C TJ=100°C 0.01 0.1 0.001 0.1 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.4 0.3 0.5 0.6 0.5 0.7 0.8 0.7 0.9 0.9 1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics Fig.6 Typical Forward Characteristics 100 TSF40H120C INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TJ=150°C 10 10 INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 1 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics TSF40H100C 10 TJ=150°C 10 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 3 (A) 20 1000 1.1 1.2 1.1 1.2 100 10 TSF40H120C 10 UF1DLW 1 TJ=150°C TJ=125°C TJ=125°C TJ=25°C 0.1 TJ=25°C 1 0.01 0.1 0.001 0.1 (A) 40 CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) 50 TJ=100°C 0.3 0.3 0.4 0.5 0.5 0.6 0.7 Pulse width 300μs 1% duty cycle Pulse width 0.7 0.8 0.9 FORWARD VOLTAGE (V) 1 0.9 Version: C2105 TSF40H100C – TSF40H200C Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) 10 TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 TJ=25°C 0.001 0.0001 20 30 40 50 60 70 80 90 100 100 10 TSF40H150C 10 UF1DLW 1 TJ=150°C TJ=125°C TJ=125°C TJ=25°C 0.1 TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.1 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.3 0.4 0.5 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1 1.1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.9 Typical Reverse Characteristics Fig.10 Typical Forward Characteristics 100 TSF40H200C 10 TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) (A) TSF40H150C 1.1 1.2 1.1 1.2 100 10 TSF40H200C 10 UF1DLW 1 TJ=150°C TJ=125°C TJ=125°C 0.1 TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.1 TJ=25°C (A) INSTANTANEOUS FORWARD CURRENT (A) 100 10 INSTANTANEOUS REVERSE CURRENT (mA) Fig.8 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.7 Typical Reverse Characteristics Pulse width 300μs 1% duty cycle Pulse width 0.3 0.3 0.4 0.5 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1 1.1 FORWARD VOLTAGE (V) 4 Version: C2105 TSF40H100C – TSF40H200C Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AB MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: C2105 TSF40H100C – TSF40H200C Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: C2105