TST10L200CW

TST10H100CW – TST10H200CW Taiwan Semiconductor 10A, 100V - 200V Trench Schottky Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ High efficiency High forward surge capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 10 A VRRM 100 - 200 V IFSM 100 A TJ MAX 150 °C Package TO-220AB Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.88g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device Repetitive peak reverse voltage VRRM Reverse voltage, total rms value VR(RMS) Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Critical rate of rise of off-state voltage TST10H TST10H TST10H TST10H UNIT 100CW 120CW 150CW 200CW TST10H TST10H TST10H TST10H 100CW 120CW 150CW 200CW 100 120 150 200 V 70 84 105 140 V IF 10 A IFSM 100 A dv/dt 10,000 V/μs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: B2104 TST10H100CW – TST10H200CW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 3.2 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TST10H100CW TST10H120CW TST10H150CW Forward voltage per (1) diode TST10H200CW VF TST10H100CW TST10H120CW TST10H150CW Reverse current @ rated (2) VR per diode IF = 5A, TJ = 25°C IF = 5A, TJ = 125°C TST10H200CW TST10H100CW TST10H120CW TJ = 25°C TST10H150CW TST10H200CW TST10H100CW TST10H120CW TJ = 125°C TST10H150CW TST10H200CW TYP MAX UNIT 0.62 0.70 V 0.69 0.79 V 0.78 0.88 V 0.81 0.91 V 0.55 0.63 V 0.58 0.66 V 0.64 0.72 V 0.67 0.75 V - 100 µA - 15 mA - 10 mA IR Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING TST10HxCW TO-220AB 50 / Tube Notes: 1. “x” defines voltage from 100V(TST10H100CW) to 200V(TST10H200CW) 2 Version: B2104 TST10H100CW – TST10H200CW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 CAPACITANCE (pF) 10 5 0 50 75 100 125 TST10H120CW 100 TST10H150CW f=1.0MHz Vsig=50mVp-p 10 150 0.1 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TST10H100CW TJ=150°C TJ=125°C TJ=100°C 0.1 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 100 10 10 1 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TJ=150°C 1 TJ=125°C TJ=100°C 0.01 0.001 TJ=25°C 20 30 40 50 60 70 80 90 TJ=25°C TJ=100°C 1 TJ=25°C 0.01 Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.1 1.2 Fig.6 Typical Forward Characteristics TST10H120CW 10 TJ=150°C FORWARD VOLTAGE (V) 100 0.0001 UF1DLW 0.1 Fig.5 Typical Reverse Characteristics 0.1 TST10H100CW TJ=125°C TJ=125°C PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 100 Fig.4 Typical Forward Characteristics 100 1 10 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 TST10H200CW (A) 25 TST10H100CW 1000 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 10 TST10H120CW 10 1 0.1 1 0.01 UF1DLW TJ=150°C TJ=125°C TJ=125°C TJ=25°C (A) AVERAGE FORWARD CURRENT (A) 15 TJ=100°C TJ=25°C Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FORWARD VOLTAGE (V) 3 Version: B2104 TST10H100CW – TST10H200CW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.8 Typical Forward Characteristics TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 100 10 TST10H150CW 10 1 0.1 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TJ=150°C 0.1 TJ=100°C 0.001 TJ=25°C 0.00001 10 20 30 40 50 60 70 80 Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0.1 0.001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Fig.10 Typical Forward Characteristics TJ=125°C 0.0001 TJ=25°C FORWARD VOLTAGE (V) 10 0.01 TJ=25°C TJ=100°C 0.01 Fig.9 Typical Reverse Characteristics 1 TJ=150°C TJ=125°C TJ=125°C 1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TST10H200CW UF1DLW 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 10 TST10H200CW 10 1 0.1 1 0.01 UF1DLW TJ=150°C TJ=125°C TJ=125°C TJ=25°C TJ=100°C TJ=25°C Pulse width 300μs 1% duty cycle Pulse width FORWARD VOLTAGE (V) 4 (A) TST10H150CW (A) 10 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.7 Typical Reverse Characteristics Version: B2104 TST10H100CW – TST10H200CW Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-220AB MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: B2104 TST10H100CW – TST10H200CW Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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