TST30H200CW

TST30H100CW – TST30H200CW Taiwan Semiconductor 30A, 100V - 200V Trench Schottky Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ High efficiency High forward surge capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 30 A VRRM 100 - 200 V IFSM 200 A TJ MAX 150 °C Package TO-220AB Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.88g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device Repetitive peak reverse voltage VRRM Reverse voltage, total rms value VR(RMS) Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Critical rate of rise of off-state voltage TST30H TST30H TST30H TST30H UNIT 100CW 120CW 150CW 200CW TST30H TST30H TST30H TST30H 100CW 120CW 150CW 200CW 100 120 150 200 V 70 84 105 140 V IF 30 A IFSM 200 A dv/dt 10,000 V/μs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: F2104 TST30H100CW – TST30H200CW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-case thermal resistance Junction-to-case thermal resistance SYMBOL TYP UNIT RӨJC 2.2 °C/W RӨJC 3.0 °C/W TST30H100CW TST30H120CW TST30H150CW TST30H200CW ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TST30H100CW TST30H120CW TST30H150CW Forward voltage per (1) diode TST30H200CW VF TST30H100CW TST30H120CW TST30H150CW Reverse current @ rated (2) VR per diode IF = 15A, TJ = 25°C IF = 15A, TJ = 125°C TST30H200CW TST30H100CW TST30H120CW TJ = 25°C TST30H150CW TST30H200CW TST30H100CW TST30H120CW TJ = 125°C TST30H150CW TST30H200CW TYP MAX UNIT 0.69 0.78 V 0.75 0.88 V 0.81 0.90 V 0.84 0.92 V 0.61 0.68 V 0.64 0.75 V 0.68 0.77 V 0.70 0.79 V - 250 µA - 150 µA - 35 mA - 20 mA IR Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING TST30HxCW TO-220AB 50 / Tube Notes: 1. “x” defines voltage from 100V(TST30H100CW) to 200V(TST30H200CW) 2 Version: F2104 TST30H100CW – TST30H200CW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 TST30H100CW TST30H120CW 35 TST30H100CW 30 CAPACITANCE (pF) 25 20 TST30H150CW TST30H200CW 15 10 1000 TST30H120CW TST30H150CW 100 TST30H200CW 5 f=1.0MHz Vsig=50mVp-p 10 0 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 TST30H100CW T =150°C J 10 TJ=125°C TJ=100°C 0.1 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 100 10 10 1 TST30H100CW UF1DLW TJ=150°C TJ=125°C TJ=125°C 0.1 1 TJ=25°C 0.01 Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TST30H120CW TJ=150°C TJ=125°C TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 1.2 1.1 1.2 Fig.6 Typical Forward Characteristics 100 0.1 1.1 FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics 1 TJ=25°C TJ=100°C PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 1 10 (A) 25 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 10 TST30H120CW 10 1 UF1DLW TJ=150°C TJ=125°C T =125°C J 0.1 1 0.01 TJ=100°C TJ=25°C (A) AVERAGE FORWARD CURRENT (A) 40 TJ=25°C Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FORWARD VOLTAGE (V) 3 Version: F2104 TST30H100CW – TST30H200CW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.8 Typical Forward Characteristics TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 100 10 TST30H150CW 10 1 0.1 UF1DLW TJ=150°C TJ=125°C TJ=125°C 1 TJ=25°C 0.01 Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TJ=150°C 0.1 TJ=125°C 0.01 TJ=100°C 0.001 0.0001 TJ=25°C 0.00001 10 20 30 40 50 60 70 80 1.2 1.1 1.2 Fig.10 Typical Forward Characteristics 10 1 1.1 FORWARD VOLTAGE (V) Fig.9 Typical Reverse Characteristics TST30H200CW TJ=25°C TJ=100°C 90 100 100 10 TST30H200CW 1 10 0.1 UF1DLW TJ=150°C TJ=125°C TJ=125°C 1 TJ=100°C TJ=25°C (A) TST30H150CW (A) 10 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.7 Typical Reverse Characteristics TJ=25°C 0.01 Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.2 0.30.3 0.4 0.4 0.5 0.5 0.6 0.6 0.7 0.7 0.80.80.9 0.91.0 11.1 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 4 Version: F2104 TST30H100CW – TST30H200CW Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-220AB MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: F2104 TST30H100CW – TST30H200CW Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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