TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
1.5-A 42-V STEP-DOWN SWIFT™ DC/DC CONVERTER
WITH Eco-mode™ CONTROL
Check for Samples: TPS54140-Q1
FEATURES
•
•
•
•
•
•
•
1
2
•
•
•
•
•
•
Qualified for Automotive Applications
3.5-V to 42-V Input Voltage Range
200-mΩ High-Side MOSFET
High Efficiency at Light Loads With PulseSkipping Eco-mode™ Control Scheme
116-μA Operating Quiescent Current
1.3-μA Shutdown Current
100-kHz to 2.5-MHz Switching Frequency
Synchronizes to External Clock
Adjustable Slow Start/Sequencing
Undervoltage and Overvoltage Power-good
Output
•
Adjustable Undervoltage Lockout Voltage and
Hysteresis
0.8-V Internal Voltage Reference
Supported by SwitcherPro™ Software Tool
(http://focus.ti.com/docs/toolsw/folders/print/s
witcherpro.html)
For SWIFT™ Documentation, See the TI
Website at http://www.ti.com/swift
APPLICATIONS
•
•
12-V and 24-V Industrial and Commercial Low
Power Systems
Aftermarket Automotive Accessories: Video,
GPS, Entertainment
DESCRIPTION
The TPS54140-Q1 device is a 42-V 1.5-A step-down regulator with an integrated high-side MOSFET. Currentmode control provides simple external compensation and flexible component selection. A low-ripple pulse-skip
mode reduces the no load, input supply current to 116 μA. Using the enable pin, shutdown supply current is
reduced to 1.3 μA.
Undervoltage lockout is internally set at 2.5 V, but can be increased using the enable pin. The output voltage
startup ramp is controlled by the slow start pin that can also be configured for sequencing or tracking. An opendrain power good signal indicates the output is within 92% to 109% of its nominal voltage.
A wide switching frequency range allows efficiency and external component size to be optimized. Frequency fold
back and thermal shutdown protects the part during an overload condition.
The TPS54140-Q1 is available in a 10-pin thermally enhanced MSOP PowerPAD™ package (DGQ) and a 10pin SON package (DRC).
SIMPLIFIED SCHEMATIC
VIN
EFFICIENCY
vs
LOAD CURRENT
PWRGD
90
TPS54140
85
BOOT
PH
SS /TR
RT /CLK
COMP
Efficiency - %
80
EN
75
70
65
VI = 12 V,
VO = 3.3 V,
fsw = 1200 kHz
60
VSENSE
55
50
0
GND
0.25
0.50
0.75
1
1.25
Load Current - A
1.50
1.75
2
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Eco-mode, SwitcherPro, SWIFT, PowerPAD are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION (1) (2)
TJ
PACKAGE
–40°C to 150°C
(1)
(2)
ORDERABLE PART NUMBER
TOP-SIDE MARKING
MSOP – DGQ
Reel of 2500
TPS54140QDGQRQ1
5414Q
SON – DRC
Reel of 3000
TPS54140QDRCRQ1
5414Q
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
ABSOLUTE MAXIMUM RATINGS (1)
over operating temperature range (unless otherwise noted)
VIN
Input voltage
VIN
–0.3 V to 47 V
EN (2)
–0.3 V to 5 V
BOOT
55 V
VSENSE
–0.3 V to 3 V
COMP
–0.3 V to 3 V
PWRGD
–0.3 V to 6 V
SS/TR
–0.3 V to 3 V
RT/CLK
–0.3 V to 3.6 V
PH to BOOT
8V
–0.6 V to 47 V
VOUT
Output voltage
PH
200 ns
–1 V to 47 V
30 ns
–2 V to 47 V
Maximum dc voltage, TJ = -40°C
VDIFF
ISOURCE
Differential voltage
Source current
PAD to GND
±200 mV
EN
100 μA
BOOT
100 mA
10 μA
VSENSE
PH
Current Limit
100 μA
RT/CLK
VIN
ISINK
ESD
Sink current
Electrostatic discharge protection
-0.85 V
Current Limit
100 μA
COMP
PWRGD
10 mA
SS/TR
200 μA
Human-Body Model (HBM) QSS 009-105 (JESD22-A114A)
500 V
Machine Model (MM) QSS 009-105 (JESD22-A115A)
Charged-Device Model (CDM) QSS 009-147 (JESD22-C101B.01)
50 V
1000 V
TJ
Operating junction temperature range
–40°C to 150°C
TSTG
Storage temperature range
–65°C to 150°C
(1)
(2)
2
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure beyond
absolute maximum rated conditions for extended periods may affect device reliability.
See Enable and Adjusting Undervoltage Lockout for details.
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
THERMAL INFORMATION
TPS54140-Q1
THERMAL METRIC (1) (2)
θJA
DGQ
DRC
10 PINS
10 PINS
62.5
56.5
Junction-to-ambient thermal resistance (standard board)
(3)
θJA
Junction-to-ambient thermal resistance (custom board)
57
61.5
θJCtop
Junction-to-case (top) thermal resistance
83
52.1
θJB
Junction-to-board thermal resistance
28
20.6
ψJT
Junction-to-top characterization parameter
1.7
0.9
ψJB
Junction-to-board characterization parameter
20.1
20.8
θJCbot
Junction-to-case (bottom) thermal resistance
21
5.2
(1)
(2)
(3)
UNITS
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where
distortion starts to substantially increase. See power dissipation estimate in application section of this data sheet for more information.
Test boards conditions:
(a) 3 inches x 3 inches, 2 layers, thickness: 0.062 inch
(b) 2 oz. copper traces located on the top of the PCB
(c) 2 oz. copper ground plane, bottom layer
(d) 6 thermal vias (13mil) located under the device package
ELECTRICAL CHARACTERISTICS
TJ = –40°C to 150°C, VIN = 3.5 V to 42 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY VOLTAGE (VIN PIN)
Operating input voltage
Internal undervoltage lockout
threshold
Shutdown supply current
Operating : nonswitching supply
current
3.5
42
No voltage hysteresis, rising and falling
2.5
EN = 0 V, 25°C, 3.5 V ≤ VIN ≤ 42 V
1.3
4
EN = 0 V, 125°C, 3.5 V ≤ VIN ≤ 42 V
1.9
6.5
VSENSE = 0.83 V, VIN = 12 V, 25°C
116
136
1.25
1.55
V
V
μA
ENABLE AND UVLO (EN PIN)
Enable threshold voltage
Input current
No voltage hysteresis, rising and falling, 25°C
0.9
Enable threshold +50 mV
–3.8
Enable threshold –50 mV
–0.9
Hysteresis current
V
μA
μA
–2.9
VOLTAGE REFERENCE
Voltage reference
TJ = 25°C
0.792
0.8
0.808
0.784
0.8
0.816
V
HIGH-SIDE MOSFET
On-resistance
VIN = 3.5 V, BOOT-PH = 3 V
300
VIN = 12 V, BOOT-PH = 6 V
200
410
mΩ
ERROR AMPLIFIER
Input current
50
nA
Error amplifier transconductance (gm) –2 μA < ICOMP < 2 μA, VCOMP = 1 V
97
μMhos
Error amplifier transconductance (gm) –2 μA < ICOMP < 2 μA, VCOMP = 1 V,
during slow start
VVSENSE = 0.4 V
26
μMhos
Error amplifier dc gain
VVSENSE = 0.8 V
Error amplifier bandwidth
Error amplifier source/sink
COMP to switch current
transconductance
Copyright © 2009–2012, Texas Instruments Incorporated
V(COMP) = 1 V, 100 mV overdrive
10 000
V/V
2700
kHz
±7
μA
6
A/V
3
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
TJ = –40°C to 150°C, VIN = 3.5 V to 42 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
1.8
2.7
A
182
°C
CURRENT LIMIT
Current limit threshold
VIN = 12 V, TJ = 25°C
THERMAL SHUTDOWN
Thermal shutdown
TIMING RESISTOR AND EXTERNAL CLOCK (RT/CLK PIN)
fSW
Switching frequency range using RT
mode
VIN = 12 V
100
Switching frequency
VIN = 12 V, RT = 200 kΩ
450
Switching frequency range using
CLK mode
VIN = 12 V
300
Minimum CLK pulse width
581
2500
kHz
720
kHz
2200
kHz
40
RT/CLK high threshold
VIN = 12 V
RT/CLK low threshold
VIN = 12 V
1.9
RT/CLK falling edge to PH rising
edge delay
Measured at 500 kHz with RT resistor in series
PLL lock in time
Measured at 500 kHz
0.45
ns
2.2
V
0.7
V
60
ns
100
μs
SLOW START AND TRACKING (SS/TR)
Charge current
VSS/TR = 0.4 V
2
μA
SS/TR-to-VSENSE matching
VSS/TR = 0.4 V
45
mV
SS/TR-to-reference crossover
98% nominal
SS/TR discharge current (overload)
VSENSE = 0 V, V(SS/TR) = 0.4 V
SS/TR discharge voltage
1
V
112
μA
VSENSE = 0 V
54
mV
VSENSE falling (Fault)
92
POWER-GOOD (PWRGD PIN)
VVSENSE
4
VSENSE threshold
VSENSE rising (Good)
94
VSENSE rising (Fault)
109
VSENSE falling (Good)
107
Hysteresis
VSENSE falling
Output high leakage
VSENSE = VREF, V(PWRGD) = 5.5 V, 25°C
10
On resistance
I(PWRGD) = 3 mA, VSENSE < 0.79 V
50
Minimum VIN for defined output
V(PWRGD) < 0.5 V, II(PWRGD) = 100 μA
%
2
0.95
nA
Ω
1.5
V
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
DEVICE INFORMATION
PIN FUNCTIONS
PIN
I/O
DESCRIPTION
NAME
NO.
BOOT
1
O
A bootstrap capacitor is required between BOOT and PH. If the voltage on this capacitor is below the
minimum required by the output device, the output is forced to switch off until the capacitor is refreshed.
COMP
8
O
Error amplifier output, and input to the output switch current comparator. Connect frequency compensation
components to this pin.
EN
3
I
Enable pin, internal pullup current source. Pull below 1.2 V to disable. Float to enable. Adjust the input
undervoltage lockout with two resistors.
GND
9
–
Ground
PH
10
I
The source of the internal high-side power MOSFET.
PWRGD
6
O
An open drain output, asserts low if output voltage is low due to thermal shutdown, dropout, over-voltage or
EN shut down.
RT/CLK
5
I
Resistor Timing and External Clock. An internal amplifier holds this pin at a fixed voltage when using an
external resistor to ground to set the switching frequency. If the pin is pulled above the PLL upper threshold,
a mode change occurs and the pin becomes a synchronization input. The internal amplifier is disabled and
the pin is a high impedance clock input to the internal PLL. If clocking edges stop, the internal amplifier is reenabled and the mode returns to a resistor set function.
SS/TR
4
I
Slow-start and Tracking. An external capacitor connected to this pin sets the output rise time. Since the
voltage on this pin overrides the internal reference, it can be used for tracking and sequencing.
VIN
2
I
Input supply voltage, 3.5 V to 42 V.
VSENSE
7
I
Inverting node of the transconductance ( gm) error amplifier.
–
GND pin must be electrically connected to the exposed pad on the printed circuit board for proper operation.
Thermal Pad
Copyright © 2009–2012, Texas Instruments Incorporated
5
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
FUNCTIONAL BLOCK DIAGRAM
PWRGD
6
EN
3
VIN
2
Shutdown
UO
Thermal
Shutdown
Enable
Comparator
Logic
UVLO
Shutdown
Shutdown
Logic
OV
Enable
Threshold
Boot
Charge
Voltage
Reference
Boot
UVLO
Minimum
Clamp
Pulse
Skip
ERROR
AMPLIFIER
PWM
Comparator
VSENSE 7
Current
Sense
1 BOOT
Logic
And
PWM Latch
SS/TR 4
Shutdown
Slope
Compensation
10 PH
COMP 8
11 POWERPAD
Frequency
Shift
Overload
Recovery
Maximum
Clamp
Oscillator
with PLL
TPS54140 Block Diagram
9 GND
5
RT/CLK
6
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
TYPICAL CHARACTERISTICS
VOLTAGE REFERENCE vs JUNCTION TEMPERATURE
0.816
VI = 12 V
VI = 12 V
375
BOOT-PH = 3 V
250
BOOT-PH = 6 V
125
0
-50
0.808
Vref - Voltage Reference - V
RDSON - Static Drain-Source On-State Resistance - mW
ON RESISTANCE vs JUNCTION TEMPERATURE
500
0.800
0.792
0.784
-50
-25
0
25
50
75
100
TJ - Junction Temperature - °C
125
-25
0
150
25
50
75
100
TJ - Junction Temperature - °C
125
150
Figure 1.
Figure 2.
SWITCH CURRENT LIMIT vs JUNCTION TEMPERATURE
SWITCHING FREQUENCY vs JUNCTION TEMPERATURE
3.5
610
VI = 12 V,
RT = 200 kW
VI = 12 V
fs - Switching Frequency - kHz
Switch Current - A
600
3
2.5
590
580
570
560
2
-50
-25
0
25
50
75
100
125
550
-50
150
-25
0
TJ - Junction Temperature - °C
25
50
75
100
TJ - Junction Temperature - °C
150
Figure 3.
Figure 4.
SWITCHING FREQUENCY vs RT/CLK RESISTANCE HIGH
FREQUENCY RANGE
SWITCHING FREQUENCY vs RT/CLK RESISTANCE LOW
FREQUENCY RANGE
2500
1000
VI = 12 V,
TJ = 25°C
VI = 12 V,
TJ = 25°C
2000
fs - Switching Frequency - kHz
fs - Switching Frequency - kHz
125
1500
1000
500
0
0
25
50
75
100
125
RT/CLK - Resistance - kW
Figure 5.
Copyright © 2009–2012, Texas Instruments Incorporated
150
175
200
800
600
400
200
0
100
200
300
400
500
600
700
RT/CLK - Resistance - kW
800
900
1000
Figure 6.
7
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
TYPICAL CHARACTERISTICS (continued)
EA TRANSCONDUCTANCE DURING SLOW START vs
JUNCTION TEMPERATURE
EA TRANSCONDUCTANCE vs JUNCTION TEMPERATURE
150
40
VI = 12 V
VI = 12 V
130
110
gm - mA/V
gm - mA/V
30
90
20
70
10
-50
-25
0
25
50
75
100
TJ - Junction Temperature - °C
125
50
-50
150
-25
0
25
50
75
100
125
150
TJ - Junction Temperature - °C
Figure 7.
Figure 8.
EN PIN VOLTAGE vs JUNCTION TEMPERATURE
EN PIN CURRENT vs JUNCTION TEMPERATURE
1.40
-3.25
VI = 12 V,
VI(EN) = Threshold +50 mV
VI = 12 V
-3.5
I(EN) - mA
EN - Threshold - V
1.30
-3.75
1.20
-4
1.10
-50
-25
0
25
50
75
100
125
150
-4.25
-50
25
50
75
100
125
150
Figure 9.
Figure 10.
EN PIN CURRENT vs JUNCTION TEMPERATURE
SS/TR CHARGE CURRENT vs JUNCTION TEMPERATURE
-1
VI = 12 V,
VI(EN) = Threshold -50 mV
VI = 12 V
-0.85
-1.5
I(SS/TR) - mA
I(EN) - mA
0
TJ - Junction Temperature - °C
-0.8
-0.9
-0.95
-1
-50
-2
-2.5
-25
0
25
50
75
100
TJ - Junction Temperature - °C
Figure 11.
8
-25
TJ - Junction Temperature - °C
125
150
-3
-50
-25
0
25
50
75
100
TJ - Junction Temperature - °C
125
150
Figure 12.
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
TYPICAL CHARACTERISTICS (continued)
SS/TR DISCHARGE CURRENT vs JUNCTION
TEMPERATURE
SWITCHING FREQUENCY vs VSENSE
120
100
VI = 12 V
VI = 12 V,
TJ = 25°C
80
% of Nominal fsw
II(SS/TR) - mA
115
110
60
40
105
20
100
-50
0
-25
0
25
50
75
100
TJ - Junction Temperature - °C
125
150
0
SHUTDOWN SUPPLY CURRENT vs INPUT VOLTAGE (Vin)
2
TJ = 25°C
I(VIN) - mA
1.5
1
0.5
1
0.5
0
-25
0
25
50
75
100
TJ - Junction Temperature - °C
125
150
0
10
20
VI - Input Voltage - V
Figure 15.
30
40
Figure 16.
VIN SUPPLY CURRENT vs JUNCTION TEMPERATURE
VIN SUPPLY CURRENT vs INPUT VOLTAGE
140
140
o
TJ = 25 C,
VI(VSENSE) = 0.83 V
VI = 12 V,
VI(VSENSE) = 0.83 V
130
130
120
120
I(VIN) - mA
I(VIN) - mA
0.8
SHUTDOWN SUPPLY CURRENT vs JUNCTION
TEMPERATURE
1.5
110
100
90
-50
0.6
Figure 14.
VI = 12 V
I(VIN) - mA
0.4
VSENSE - V
Figure 13.
2
0
-50
0.2
110
100
90
-25
0
25
50
75
100
TJ - Junction Temperature - °C
Figure 17.
Copyright © 2009–2012, Texas Instruments Incorporated
125
150
0
20
VI - Input Voltage - V
40
Figure 18.
9
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
TYPICAL CHARACTERISTICS (continued)
PWRGD ON RESISTANCE vs JUNCTION TEMPERATURE
PWRGD THRESHOLD vs JUNCTION TEMPERATURE
115
100
VI = 12 V
PWRGD Threshold - % of Vref
VI = 12 V
RDSON - W
80
60
40
20
VSENSE Rising
110
VSENSE Falling
105
100
VSENSE Rising
95
VSENSE Falling
90
0
-50
-25
0
25
50
75
100
125
85
-50
150
-25
0
TJ - Junction Temperature - °C
25
50
75
100
TJ - Junction Temperature - °C
125
150
Figure 19.
Figure 20.
BOOT-PH UVLO vs JUNCTION TEMPERATURE
INPUT VOLTAGE (UVLO) vs JUNCTION TEMPERATURE
3
2.3
2.1
VI(VIN) - V
VI(BOOT-PH) - V
2.75
2.50
1.9
2.25
1.7
-50
-25
0
25
50
75
100
TJ - Junction Temperature - °C
125
2
-50
150
-25
0
25
50
75
100
TJ - Junction Temperature - °C
Figure 21.
SS/TR TO VSENSE OFFSET vs VSENSE
SS/TR TO VSENSE OFFSET vs TEMPERATURE
60
V(SS/TR) = 0.2 V
VI = 12 V
VIN = 12 V
TJ = 25°C
500
55
50
400
Offset - mV
Offset Voltage Threshold (mV)
150
Figure 22.
600
300
45
40
200
35
100
30
-50
0
0
200
400
600
Voltage Sense (mV)
Figure 23.
10
125
800
-25
0
25
50
75
100
125
150
TJ - Junction Temperature - °C
Figure 24.
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
OVERVIEW
The TPS54140-Q1 device is a 42-V, 1.5-A, step-down (buck) regulator with an integrated high side n-channel
MOSFET. To improve performance during line and load transients the device implements a constant frequency,
current mode control which reduces output capacitance and simplifies external frequency compensation design.
The wide switching frequency of 100 kHz to 2500 kHz allows for efficiency and size optimization when selecting
the output filter components. The switching frequency is adjusted using a resistor to ground on the RT/CLK pin.
The device has an internal phase lock loop (PLL) on the RT/CLK pin that is used to synchronize the power
switch turn on to a falling edge of an external system clock.
The TPS54140-Q1 has a default start up voltage of approximately 2.5 V. The EN pin has an internal pull-up
current source that can be used to adjust the input voltage undervoltage lockout (UVLO) threshold with two
external resistors. In addition, the pull up current provides a default condition. When the EN pin is floating the
device will operate. The operating current is 116 μA when not switching and under no load. When the device is
disabled, the supply current is 1.3 μA.
The integrated 200 mΩ high side MOSFET allows for high efficiency power supply designs capable of delivering
1.5 amperes of continuous current to a load. The TPS54140-Q1 reduces the external component count by
integrating the boot recharge diode. The bias voltage for the integrated high side MOSFET is supplied by a
capacitor on the BOOT to PH pin. The boot capacitor voltage is monitored by an UVLO circuit and will turn the
high side MOSFET off when the boot voltage falls below a preset threshold. The TPS54140-Q1 can operate at
high duty cycles because of the boot UVLO. The output voltage can be stepped down to as low as the 0.8 V
reference.
The TPS54140-Q1 has a power-good comparator (PWRGD) which asserts when the regulated output voltage is
less than 92% or greater than 109% of the nominal output voltage. The PWRGD pin is an open drain output
which de-asserts when the VSENSE pin voltage is between 94% and 107% of the nominal output voltage
allowing the pin to transition high when a pull-up resistor is used.
The TPS54140-Q1 minimizes excessive output overvoltage (OV) transients by taking advantage of the OV
power-good comparator. When the OV comparator is activated, the high side MOSFET is turned off and masked
from turning on until the output voltage is lower than 107%.
The SS/TR (slow start/tracking) pin is used to minimize inrush currents or provide power supply sequencing
during power up. A small value capacitor should be coupled to the pin to adjust the slow start time. A resistor
divider can be coupled to the pin for critical power supply sequencing requirements. The SS/TR pin is discharged
before the output powers up. This discharging ensures a repeatable restart after an over-temperature fault,
UVLO fault or a disabled condition.
The TPS54140-Q1, also, discharges the slow start capacitor during overload conditions with an overload
recovery circuit. The overload recovery circuit will slow start the output from the fault voltage to the nominal
regulation voltage once a fault condition is removed. A frequency foldback circuit reduces the switching
frequency during startup and overcurrent fault conditions to help control the inductor current.
Copyright © 2009–2012, Texas Instruments Incorporated
11
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
DETAILED DESCRIPTION
Fixed Frequency PWM Control
The TPS54140-Q1 uses an adjustable fixed frequency, peak current mode control. The output voltage is
compared through external resistors on the VSENSE pin to an internal voltage reference by an error amplifier
which drives the COMP pin. An internal oscillator initiates the turn on of the high side power switch. The error
amplifier output is compared to the high side power switch current. When the power switch current reaches the
COMP voltage level the power switch is turned off. The COMP pin voltage will increase and decrease as the
output current increases and decreases. The device implements a current limit by clamping the COMP pin
voltage to a maximum level. The Eco-Mode™ is implemented with a minimum clamp on the COMP pin.
Slope Compensation Output Current
The TPS54140-Q1 adds a compensating ramp to the switch current signal. This slope compensation prevents
sub-harmonic oscillations. The available peak inductor current remains constant over the full duty cycle range.
Pulse Skip Eco-Mode
The TPS54140-Q1 enters the pulse skip mode when the voltage on the COMP pin is the minimum clamp value.
The TPS54140-Q1 operates in a pulse skip mode at light load currents to improve efficiency. The peak switch
current during the pulse skip mode will be the greater value of 50 mA or the peak inductor current that is a
function of the minimum on time, input voltage, output voltage and inductance value. When the load current is
low and the output voltage is within regulation the device will enter a sleep mode and draw only 116 μA input
quiescent current. While the device is in sleep mode the output power is delivered by the output capacitor. As the
load current decreases, the time the output capacitor supplies the load current increases and the switching
frequency decreases reducing gate drive and switching losses. As the output voltage drops, the TPS54140-Q1
wakes up from the sleep mode and the power switch turns on to recharge the output capacitor, see Figure 25.
The internal PLL remains operating when in sleep mode. When operating at light load currents in the pulse skip
mode the switching transitions occur synchronously with the external clock signal.
VOUT(ac)
IL
PH
Figure 25. Pulse Skip Mode Operation
12
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
DETAILED DESCRIPTION (continued)
Bootstrap Voltage (BOOT)
The TPS54140-Q1 has an integrated boot regulator and requires a small ceramic capacitor between the BOOT
and PH pin to provide the gate drive voltage for the high side MOSFET. The value of the ceramic capacitor
should be 0.1 μF. A ceramic capacitor with an X7R or X5R grade dielectric is recommended because of the
stable characteristics over temperature and voltage. To improve drop out, the TPS54140-Q1 is designed to
operate at 100% duty cycle as long as the BOOT to PH pin voltage is greater than 2.1 V. When the voltage from
BOOT to PH drops below 2.1 V, the high side MOSFET is turned off using an UVLO circuit allowing for the low
side diode to conduct which allows refreshing of the BOOT capacitor. Since the supply current sourced from the
BOOT capacitor is low, the high side MOSFET can remain on for more switching cycles than it refreshes, thus,
the effective duty cycle limitation that is attributed to the boot regulator system is high.
Low Dropout Operation
The duty cycle during dropout of the regulator will be mainly determined by the voltage drops across the power
MOSFET, inductor, low side diode and printed circuit board resistance. During operating conditions in which the
input voltage drops, the high side MOSFET can remain on for 100% of the duty cycle to maintain output
regulation or until the BOOT to PH voltage falls below 2.1 V.
Once the high side is off, the low side diode will conduct and the BOOT capacitor will be recharged. During this
boot capacitor recharge time, the inductor current will ramp down until the high side MOSFET turns on. The
recharge time is longer than the typical high side off time of previous switching cycles, and thus, the inductor
current ripple is larger resulting in more ripple voltage on the output. The recharge time is a function of the input
voltage, boot capacitor value, and the impedance of the internal boot recharge diode.
Attention needs to be taken in maximum duty cycle applications which experience extended time periods without
a load current. When the voltage across the BOOT capacitors falls below the 2.1 V threshold in applications that
have a difference in the input voltage and output voltage that is less than 3 V, the high side MOSFET will be
turned off but there is not enough current in the inductor to pull the PH pin down to recharge the boot capacitor.
The regulator will not switch because the boot capacitor is less than 2.1 V and the output capacitor will decay
until the difference in the input voltage and output voltage is 2.1 V. At this time the boot undervoltage lockout is
exceeded and the device will switch until the desired output voltage is reached.
The start and stop voltages are shown in Figure 26 and Figure 27 for 3.3-V and 5-V applications. The voltages
are plotted versus the load current. The start voltage is defined as the input voltage needed to regulate within
1%. The stop voltage is defined as the input voltage at which the output drops by 5% or stops switching.
4
5.6
VO = 3.3 V
VO = 5 V
5.4
VI - Input Voltage - V
VI - Input Voltage - V
3.8
3.6
Start
3.4
Stop
3.2
5.2
Start
5
Stop
4.8
3
4.6
0
0.05
0.10
IO - Output Current - A
0.15
Figure 26. 3.3-V Start/Stop Voltage
Copyright © 2009–2012, Texas Instruments Incorporated
0.20
0
0.05
0.10
IO - Output Current - A
0.15
0.20
Figure 27. 5-V Start/Stop Voltage
13
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
DETAILED DESCRIPTION (continued)
Error Amplifier
The TPS54140-Q1 has a transconductance amplifier for the error amplifier. The error amplifier compares the
VSENSE voltage to the lower of the SS/TR pin voltage or the internal 0.8-V voltage reference. The
transconductance (gm) of the error amplifier is 97 μA/V during normal operation. During the slow start operation,
the transconductance is a fraction of the normal operating gm. When the voltage of the VSENSE pin is below 0.8
V and the device is regulating using the SS/TR voltage, the gm is 25 μA/V.
The frequency compensation components (capacitor, series resistor and capacitor) are added from the COMP
pin to ground.
Voltage Reference
The voltage reference system produces a precise ±2% voltage reference over temperature by scaling the output
of a temperature stable bandgap circuit.
Adjusting the Output Voltage
The output voltage is set with a resistor divider from the output node to the VSENSE pin. It is recommended to
use 1% tolerance or better divider resistors. Start with a 10 kΩ for the R2 resistor and use the Equation 1 to
calculate R1. To improve efficiency at very light loads consider using larger value resistors. If the values are too
high the regulator will be more susceptible to noise and voltage errors from the VSENSE input current will be
noticeable
æ Vout - 0.8V ö
R1 = R2 ´ ç
÷
0.8 V
è
ø
(1)
Enable and Adjusting Undervoltage Lockout
The TPS54140-Q1 is disabled when the VIN pin voltage falls below 2.5 V. If an application requires a higher
undervoltage lockout (UVLO), use the EN pin as shown in Figure 28 to adjust the input voltage UVLO by using
the two external resistors. Though it is not necessary to use the UVLO adjust resistors, for operation it is highly
recommended to provide consistent power up behavior. The EN pin has an internal pull-up current source, I1, of
0.9 μA that provides the default condition of the TPS54140-Q1 operating when the EN pin floats. Once the EN
pin voltage exceeds 1.25 V, an additional 2.9 μA of hysteresis, IHYS, is added. This additional current facilitates
input voltage hysteresis. Use Equation 2 to set the external hysteresis for the input voltage. Use Equation 3 to
set the input start voltage.
TPS54140
VIN
Ihys
I1
0.9 mA
R1
2.9 mA
+
R2
EN
1.25 V
-
Figure 28. Adjustable Undervoltage Lockout (UVLO)
V
- VSTOP
R1 = START
IHYS
R2 =
14
VENA
VSTART - VENA
+ I1
R1
(2)
(3)
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
DETAILED DESCRIPTION (continued)
Another technique to add input voltage hysteresis is shown in Figure 29. This method may be used, if the
resistance values are high from the previous method and a wider voltage hysteresis is needed. The resistor R3
sources additional hysteresis current into the EN pin.
TPS54140
VIN
Ihys
R1
I1
0.9 mA
2.9 mA
+
EN
R2
1.25 V
-
VOUT
R3
Figure 29. Adding Additional Hysteresis
R1 =
R2 =
VSTART - VSTOP
V
IHYS + OUT
R3
(4)
VENA
VSTART - VENA
V
+ I1 - ENA
R1
R3
(5)
Do not place a low-impedance voltage source with greater than 5 V directly on the EN pin. Do not place a
capacitor directly on the EN pin if VEN > 5 V when using a voltage divider to adjust the start and stop voltage.
The node voltage, (see Figure 30) must remain equal to or less than 5.8 V. The zener diode can sink up to 100
μA. The EN pin voltage can be greater than 5 V if the VIN voltage source has a high impedance and does not
source more than 100 μA into the EN pin.
VIN
IA
RUVLO1
EN
10 kW
Node
3
IB
RUVLO2
IC
5.8 V
UDG-10065
Figure 30. Node Voltage
Copyright © 2009–2012, Texas Instruments Incorporated
15
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
DETAILED DESCRIPTION (continued)
Slow Start/Tracking Pin (SS/TR)
The TPS54140-Q1 effectively uses the lower voltage of the internal voltage reference or the SS/TR pin voltage
as the reference voltage of the power-supply and regulates the output accordingly. A capacitor on the SS/TR pin
to ground implements a slow start time. The TPS54140-Q1 has an internal pull-up current source of 2 μA that
charges the external slow start capacitor. The calculations for the slow start time (10% to 90%) are shown in
Equation 6. The voltage reference (VREF) is 0.8 V and the slow start current (ISS) is 2 μA. The slow start capacitor
should remain lower than 0.47 μF and greater than 0.47 nF.
Tss(ms) ´ Iss(m A)
Css(nF) =
Vref (V) ´ 0.8
(6)
At power up, the TPS54140-Q1 will not start switching until the slow start pin is discharged to less than 40 mV to
ensure a proper power up, see Figure 31.
Also, during normal operation, the TPS54140-Q1 will stop switching and the SS/TR must be discharged to 40
mV, when the VIN UVLO is exceeded, EN pin pulled below 1.25 V, or a thermal shutdown event occurs.
The VSENSE voltage will follow the SS/TR pin voltage with a 45-mV offset up to 85% of the internal voltage
reference. When the SS/TR voltage is greater than 85% on the internal reference voltage the offset increases as
the effective system reference transitions from the SS/TR voltage to the internal voltage reference (see
Figure 23). The SS/TR voltage will ramp linearly until clamped at 1.7 V.
EN
SS/TR
VSENSE
VOUT
Figure 31. Operation of SS/TR Pin When Starting
Overload Recovery Circuit
The TPS54140-Q1 has an overload recovery (OLR) circuit. The OLR circuit will slow start the output from the
overload voltage to the nominal regulation voltage once the fault condition is removed. The OLR circuit will
discharge the SS/TR pin to a voltage slightly greater than the VSENSE pin voltage using an internal pull down of
100 μA when the error amplifier is changed to a high voltage from a fault condition. When the fault condition is
removed, the output will slow start from the fault voltage to nominal output voltage.
16
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
DETAILED DESCRIPTION (continued)
Sequencing
Many of the common power supply sequencing methods can be implemented using the SS/TR, EN and PWRGD
pins. The sequential method can be implemented using an open drain output of a power-on reset pin of another
device. The sequential method is illustrated in Figure 32 using two TPS54140-Q1 devices. The power good is
coupled to the EN pin on the TPS54140-Q1 which will enable the second power supply once the primary supply
reaches regulation. If needed, a 1-nF ceramic capacitor on the EN pin of the second power supply will provide a
1-ms start up delay. Figure 33 shows the results of Figure 32.
TPS54140
EN
PWRGD
EN
EN1
SS /TR
SS /TR
PWRGD1
PWRGD
VOUT1
VOUT2
Figure 32. Schematic for Sequential Start-Up
Sequence
Figure 33. Sequential Startup using EN and
PWRGD
TPS54140
TPS54160
3
EN
4
SS/TR
6
PWRGD
EN1, EN2
VOUT1
TPS54160
TPS54140
VOUT2
3
EN
4
SS/TR
6
PWRGD
Figure 34. Schematic for Ratiometric Start-Up
Using Coupled SS/TR Pins
Copyright © 2009–2012, Texas Instruments Incorporated
Figure 35. Ratiometric Startup Using Coupled
SS/TR Pins
17
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
DETAILED DESCRIPTION (continued)
Figure 34 shows a method for ratiometric start up sequence by connecting the SS/TR pins together. The
regulator outputs will ramp up and reach regulation at the same time. When calculating the slow start time the
pullup current source must be doubled in Equation 6. Figure 35 shows the results of Figure 34.
TPS54140
EN
VOUT 1
SS/TR
PWRGD
TPS54140
VOUT 2
EN
R1
SS/ TR
R2
PWRGD
R3
R4
Figure 36. Schematic for Ratiometric and Simultaneous Start-Up Sequence
Ratiometric and simultaneous power supply sequencing can be implemented by connecting the resistor network
of R1 and R2 shown in Figure 36 to the output of the power supply that needs to be tracked or another voltage
reference source. Using Equation 7 and Equation 8, the tracking resistors can be calculated to initiate the VOUT2
slightly before, after or at the same time as VOUT1. Equation 9 is the voltage difference between VOUT1 and VOUT2
at the 95% of nominal output regulation.
The ΔV variable is zero volts for simultaneous sequencing. To minimize the effect of the inherent SS/TR to
VSENSE offset (VSSOFFSET) in the slow start circuit and the offset created by the pullup current source (ISS) and
tracking resistors, the VSSOFFSET and LSS are included as variables in the equations.
To design a ratio-metric start up in which the VOUT2 voltage is slightly greater than the VOUT1 voltage when VOUT2
reaches regulation, use a negative number in Equation 7 through Equation 9 for ΔV. Equation 9 will result in a
positive number for applications which the VOUT2 is slightly lower than VOUT1 when VOUT2 regulation is achieved.
Since the SS/TR pin must be pulled below 40 mV before starting after an EN, UVLO or thermal shutdown fault,
careful selection of the tracking resistors is needed to ensure the device will restart after a fault. Make sure the
calculated R1 value from Equation 7 is greater than the value calculated in Equation 10 to ensure the device can
recover from a fault.
As the SS/TR voltage becomes more than 85% of the nominal reference voltage the VSSOFFSET becomes larger
as the slow start circuits gradually handoff the regulation reference to the internal voltage reference. The SS/TR
pin voltage needs to be greater than 1.3 V for a complete handoff to the internal voltage reference as shown in
Figure 23.
Vout2 + deltaV
Vssoffset
R1 =
´
VREF
Iss
(7)
VREF ´ R1
R2 =
Vout2 + deltaV - VREF
(8)
18
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
DETAILED DESCRIPTION (continued)
deltaV = Vout1 - Vout2
R1 > 2800 ´ Vout1 - 180 ´ deltaV
(9)
(10)
EN
EN
VOUT1
VOUT1
VOUT2
Figure 37. Ratiometric Startup with VOUT2 Leading
VOUT1
VOUT2
Figure 38. Ratiometric Startup with VOUT1 Leading
VOUT2
EN
VOUT1
VOUT2
Figure 39. Simultaneous Startup With Tracking Resistor
Copyright © 2009–2012, Texas Instruments Incorporated
19
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
DETAILED DESCRIPTION (continued)
Constant Switching Frequency and Timing Resistor (RT/CLK Pin)
The switching frequency of the TPS54140-Q1 is adjustable over a wide range from approximately 100 kHz to
2500 kHz by placing a resistor on the RT/CLK pin. The RT/CLK pin voltage is typically 0.5 V and must have a
resistor to ground to set the switching frequency. To determine the timing resistance for a given switching
frequency, use Equation 11 or the curves in Figure 40 or Figure 41. To reduce the solution size one would
typically set the switching frequency as high as possible, but tradeoffs of the supply efficiency, maximum input
voltage and minimum controllable on time should be considered.
The minimum controllable on time is typically 130 ns and limits the maximum operating input voltage.
The maximum switching frequency is also limited by the frequency shift circuit. More discussion on the details of
the maximum switching frequency is located below.
206033
RT (kOhm ) =
¦ sw (kHz )1.0888
(11)
SWITCHING FREQUENCY
vs
RT/CLK RESISTANCE HIGH FREQUENCY RANGE
SWITCHING FREQUENCY
vs
RT/CLK RESISTANCE LOW FREQUENCY RANGE
2500
500
2000
fs - Switching Frequency - kHz
fs - Switching Frequency - kHz
VI = 12 V,
TJ = 25°C
1500
1000
500
0
0
25
50
75
100
125
150
RT/CLK - Clock Resistance - kW
175
200
Figure 40. High Range RT
VI = 12 V,
TJ = 25°C
400
300
200
100
0
200
300
400
500
600 700
800
900
RT/CLK - Resistance - kW
1000 1100
1200
Figure 41. Low Range RT
Overcurrent Protection and Frequency Shift
The TPS54140-Q1 implements current mode control which uses the COMP pin voltage to turn off the high side
MOSFET on a cycle by cycle basis. During each cycle the switch current and COMP pin voltage are compared,
when the peak switch current intersects the COMP voltage, the high side switch is turned off. During overcurrent
conditions that pull the output voltage low, the error amplifier will respond by driving the COMP pin high,
increasing the switch current. The error amplifier output is clamped internally, which functions as a switch current
limit.
To increase the maximum operating switching frequency at high input voltages the TPS54140-Q1 implements a
frequency shift. The switching frequency is divided by 8, 4, 2, and 1 as the voltage ramps from 0 to 0.8 volts on
VSENSE pin.
The device implements a digital frequency shift to enable synchronizing to an external clock during normal
startup and fault conditions. Since the device can only divide the switching frequency by 8, there is a maximum
input voltage limit in which the device operates and still have frequency shift protection.
During short-circuit events (particularly with high input voltage applications), the control loop has a finite minimum
controllable on time and the output has a very low voltage. During the switch on time, the inductor current ramps
to the peak current limit because of the high input voltage and minimum on time. During the switch off time, the
inductor would normally not have enough off time and output voltage for the inductor to ramp down by the ramp
up amount. The frequency shift effectively increases the off time allowing the current to ramp down.
20
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
DETAILED DESCRIPTION (continued)
Selecting the Switching Frequency
The switching frequency that is selected should be the lower value of the two equations, Equation 12 and
Equation 13. Equation 12 is the maximum switching frequency limitation set by the minimum controllable on time.
Setting the switching frequency above this value will cause the regulator to skip switching pulses.
Equation 13 is the maximum switching frequency limit set by the frequency shift protection. To have adequate
output short circuit protection at high input voltages, the switching frequency should be set to be less than the
ƒSW(maxshift) frequency. In Equation 13, to calculate the maximum switching frequency one must take into account
that the output voltage decreases from the nominal voltage to 0 volts, the ƒDIV integer increases from 1 to 8
corresponding to the frequency shift.
In Figure 42, the solid line illustrates a typical safe operating area regarding frequency shift and assumes the
output voltage is zero volts, and the resistance of the inductor is 0.1 Ω, FET on resistance of 0.2 Ω and the diode
voltage drop is 0.5 V. The dashed line is the maximum switching frequency to avoid pulse skipping. Enter these
equations in a spreadsheet or other software or use the SwitcherPro design software to determine the switching
frequency.
fSW (max skip ) =
fSWshift =
fDIV
tON
1
tON
æ I ´R + V
dc
OUT + Vd
´ç L
ç VIN - IL ´ RDS(on ) + Vd
è
æ IL ´ Rdc + VOUT(sc ) + Vd
´ç
ç VIN - IL ´ RDS(on ) + Vd
è
ö
÷
÷
ø
(12)
ö
÷
÷
ø
(13)
IL
inductor current
Rdc
inductor resistance
VIN
maximum input voltage
VOUT
output voltage
VOUTSC
output voltage during short
Vd
diode voltage drop
RDS(ON)
switch on resistance
tON
controllable on time
ƒDIV
frequency divide equals (1, 2, 4, or 8)
2500
fs - Switching Frequency - kHz
VO = 3.3 V
2000
Shift
1500
Skip
1000
500
0
10
20
30
VI - Input Voltage - V
40
Figure 42. Maximum Switching Frequency vs. Input Voltage
Copyright © 2009–2012, Texas Instruments Incorporated
21
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
DETAILED DESCRIPTION (continued)
How to Interface to RT/CLK Pin
The RT/CLK pin can be used to synchronize the regulator to an external system clock. To implement the
synchronization feature connect a square wave to the RT/CLK pin through the circuit network shown in
Figure 43. The square wave amplitude must transition lower than 0.5 V and higher than 2.2 V on the RT/CLK pin
and have an on time greater than 40 ns and an off time greater than 40 ns. The synchronization frequency range
is 300 kHz to 2200 kHz. The rising edge of the PH will be synchronized to the falling edge of RT/CLK pin signal.
The external synchronization circuit should be designed in such a way that the device will have the default
frequency set resistor connected from the RT/CLK pin to ground should the synchronization signal turn off. It is
recommended to use a frequency set resistor connected as shown in Figure 43 through a 50-Ω resistor to
ground. The resistor should set the switching frequency close to the external CLK frequency. It is recommended
to ac couple the synchronization signal through a 10-pF ceramic capacitor to RT/CLK pin and a 4-kΩ series
resistor. The series resistor reduces PH jitter in heavy load applications when synchronizing to an external clock
and in applications which transition from synchronizing to RT mode. The first time the CLK is pulled above the
CLK threshold the device switches from the RT resistor frequency to PLL mode. The internal 0.5-V voltage
source is removed and the CLK pin becomes high impedance as the PLL starts to lock onto the external signal.
Since there is a PLL on the regulator the switching frequency can be higher or lower than the frequency set with
the external resistor. The device transitions from the resistor mode to the PLL mode and then will increase or
decrease the switching frequency until the PLL locks onto the CLK frequency within 100 microseconds.
When the device transitions from the PLL to resistor mode the switching frequency will slow down from the CLK
frequency to 150 kHz, then reapply the 0.5-V voltage and the resistor will then set the switching frequency. The
switching frequency is divided by 8, 4, 2, and 1 as the voltage ramps from 0- to 0.8-volts on VSENSE pin. The
device implements a digital frequency shift to enable synchronizing to an external clock during normal startup
and fault conditions. Figure 44, Figure 45 and Figure 46 show the device synchronized to an external system
clock in continuous conduction mode (CCM) discontinuous conduction (DCM) and pulse skip mode (PSM).
TPS54140
10 pF
4 kW
PLL
Rfset
EXT
Clock
Source
50 W
RT/CLK
Figure 43. Synchronizing to a System Clock
22
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
DETAILED DESCRIPTION (continued)
EXT
EXT
VOUT
IL
PH
PH
IL
Figure 44. Plot of Synchronizing in CCM
Figure 45. Plot of Synchronizing in DCM
EXT
IL
PH
Figure 46. Plot of Synchronizing in PSM
Power-good (PWRGD Pin)
The PWRGD pin is an open drain output. Once the VSENSE pin is between 94% and 107% of the internal
voltage reference the PWRGD pin is de-asserted and the pin floats. It is recommended to use a pull-up resistor
between the values of 1 kΩ and 100 kΩ to a voltage source that is 5.5 V or less. The PWRGD is in a defined
state once the VIN input voltage is greater than 1.5 V but with reduced current sinking capability. The PWRGD
will achieve full current sinking capability as VIN input voltage approaches 3 V.
Copyright © 2009–2012, Texas Instruments Incorporated
23
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
DETAILED DESCRIPTION (continued)
The PWRGD pin is pulled low when the VSENSE is lower than 92% or greater than 109% of the nominal internal
reference voltage. Also, the PWRGD is pulled low, if the UVLO or thermal shutdown are asserted or the EN pin
pulled low.
Overvoltage Transient Protection
The TPS54140-Q1 incorporates an overvoltage transient protection (OVTP) circuit to minimize voltage overshoot
when recovering from output fault conditions or strong unload transients on power supply designs with low value
output capacitance. For example, when the power supply output is overloaded the error amplifier compares the
actual output voltage to the internal reference voltage. If the VSENSE pin voltage is lower than the internal
reference voltage for a considerable time, the output of the error amplifier will respond by clamping the error
amplifier output to a high voltage, thus requesting the maximum output current. Once the condition is removed,
the regulator output rises and the error amplifier output transitions to the steady state duty cycle. In some
applications, the power supply output voltage can respond faster than the error amplifier output can respond, this
actuality leads to the possibility of an output overshoot. The OVTP feature minimizes the output overshoot, when
using a low value output capacitor, by implementing a circuit to compare the VSENSE pin voltage to OVTP
threshold which is 109% of the internal voltage reference. If the VSENSE pin voltage is greater than the OVTP
threshold, the high side MOSFET is disabled preventing current from flowing to the output and minimizing output
overshoot. When the VSENSE voltage drops lower than the OVTP threshold, the high side MOSFET is allowed
to turn on at the next clock cycle.
Thermal Shutdown
The device implements an internal thermal shutdown to protect itself if the junction temperature exceeds 182°C.
The thermal shutdown forces the device to stop switching when the junction temperature exceeds the thermal
trip threshold. Once the die temperature decreases below 182°C, the device reinitiates the power up sequence
by discharging the SS/TR pin.
Small Signal Model for Loop Response
Figure 47 shows an equivalent model for the TPS54140-Q1 control loop which can be modeled in a circuit
simulation program to check frequency response and dynamic load response. The error amplifier is a
transconductance amplifier with a gmEA of 97 μA/V. The error amplifier can be modeled using an ideal voltage
controlled current source. The resistor Ro and capacitor Co model the open loop gain and frequency response of
the amplifier. The 1-mV ac voltage source between the nodes a and b effectively breaks the control loop for the
frequency response measurements. Plotting c/a shows the small signal response of the frequency compensation.
Plotting a/b shows the small signal response of the overall loop. The dynamic loop response can be checked by
replacing RL with a current source with the appropriate load step amplitude and step rate in a time domain
analysis. This equivalent model is only valid for continuous conduction mode designs.
24
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
DETAILED DESCRIPTION (continued)
PH
VO
Power Stage
gmps 6 A/V
a
b
R1
RESR
RL
COMP
c
0.8 V
R3
CO
C2
RO
VSENSE
COUT
gmea
97 mA/V
R2
C1
Figure 47. Small Signal Model for Loop Response
Simple Small Signal Model for Peak Current Mode Control
Figure 48 describes a simple small signal model that can be used to understand how to design the frequency
compensation. The TPS54140-Q1 power stage can be approximated to a voltage-controlled current source (duty
cycle modulator) supplying current to the output capacitor and load resistor. The control to output transfer
function is shown in Equation 14 and consists of a dc gain, one dominant pole, and one ESR zero. The quotient
of the change in switch current and the change in COMP pin voltage (node c in Figure 47) is the power stage
transconductance. The gmPS for the TPS54140-Q1 is 6 A/V. The low-frequency gain of the power stage
frequency response is the product of the transconductance and the load resistance as shown in Equation 15.
As the load current increases and decreases, the low-frequency gain decreases and increases, respectively. This
variation with the load may seem problematic at first glance, but fortunately the dominant pole moves with the
load current (see Equation 16). The combined effect is highlighted by the dashed line in the right half of
Figure 48. As the load current decreases, the gain increases and the pole frequency lowers, keeping the 0-dB
crossover frequency the same for the varying load conditions which makes it easier to design the frequency
compensation. The type of output capacitor chosen determines whether the ESR zero has a profound effect on
the frequency compensation design. Using high ESR aluminum electrolytic capacitors may reduce the number
frequency compensation components needed to stabilize the overall loop because the phase margin increases
from the ESR zero at the lower frequencies (see Equation 17).
Copyright © 2009–2012, Texas Instruments Incorporated
25
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
DETAILED DESCRIPTION (continued)
VO
Adc
VC
RESR
fp
RL
gmps
COUT
fz
Figure 48. Simple Small Signal Model and Frequency Response for Peak Current Mode Control
æ
s ö
ç1 +
÷
2p ´ fZ ø
VOUT
è
= Adc ´
VC
æ
s ö
ç1 +
÷
2
p
´ fP ø
è
(14)
Adc = gmps ´ RL
(15)
1
fP =
COUT ´ RL ´ 2p
(16)
1
fZ =
COUT ´ RESR ´ 2p
(17)
Small Signal Model for Frequency Compensation
The TPS54140-Q1 uses a transconductance amplifier for the error amplifier and readily supports three of the
commonly-used frequency compensation circuits. Compensation circuits Type 2A, Type 2B, and Type 1 are
shown in Figure 49. Type 2 circuits most likely implemented in high bandwidth power-supply designs using low
ESR output capacitors. The Type 1 circuit is used with power-supply designs with high-ESR aluminum
electrolytic or tantalum capacitors. Equation 18 and Equation 19 show how to relate the frequency response of
the amplifier to the small signal model in Figure 49. The open-loop gain and bandwidth are modeled using the RO
and CO shown in Figure 49. See the application section for a design example using a Type 2A network with a
low ESR output capacitor.
Equation 18 through Equation 27 are provided as a reference for those who prefer to compensate using the
preferred methods. Those who prefer to use prescribed method use the method outlined in the application
section or use switched information.
26
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TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
DETAILED DESCRIPTION (continued)
VO
R1
VSENSE
gmea
Type 2A
COMP
Type 2B
Type 1
Vref
R2
RO
R3
CO
C1
C2
R3
C2
C1
Figure 49. Types of Frequency Compensation
Aol
A0
P1
Z1
P2
A1
BW
Figure 50. Frequency Response of the Type 2A and Type 2B Frequency Compensation
Ro =
COUT
Aol(V/V)
gmea
gmea
=
2p ´ BW (Hz)
æ
ö
s
ç1 +
÷
2p ´ fZ1 ø
è
EA = A0 ´
æ
ö æ
ö
s
s
ç1 +
÷ ´ ç1 +
÷
2
2
p
´
p
´
f
f
P1 ø è
P2 ø
è
A0 = gmea
A1 = gmea
P1 =
R2
´ Ro ´
R1 + R2
R2
´ Ro| | R3 ´
R1 + R2
1
2p ´ Ro ´ C1
Copyright © 2009–2012, Texas Instruments Incorporated
(18)
(19)
(20)
(21)
(22)
(23)
27
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
DETAILED DESCRIPTION (continued)
Z1 =
(24)
1
P2 =
type 2a
2p ´ R3 | | R ´ (C2 + COUT )
(25)
1
P2 =
type 2b
2p ´ R3 | | R ´ COUT
(26)
P2 =
28
1
2p ´ R3 ´ C1
1
type 1
2p ´ R ´ (C2 + COUT )
(27)
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
APPLICATION INFORMATION
Design Guide — Step-By-Step Design Procedure
This example details the design of a high frequency switching regulator design using ceramic output capacitors.
A few parameters must be known in order to start the design process. These parameters are typically determined
at the system level. For this example, we will start with the following known parameters:
Output Voltage
3.3 V
Transient Response 0- to 1.5-A load step
ΔVOUT = 4%
Maximum Output Current
1.5 A
Input Voltage
12 V nom. 8 V to 18 V
Output Voltage Ripple
< 33 mVpp
Start Input Voltage (rising VIN)
7.25 V
Stop Input Voltage (falling VIN)
6.25 V
Selecting the Switching Frequency
The first step is to decide on a switching frequency for the regulator. Typically, the user will want to choose the
highest switching frequency possible since this will produce the smallest solution size. The high switching
frequency allows for lower valued inductors and smaller output capacitors compared to a power supply that
switches at a lower frequency. The switching frequency that can be selected is limited by the minimum on-time of
the internal power switch, the input voltage and the output voltage and the frequency shift limitation.
Equation 12 and Equation 13 must be used to find the maximum switching frequency for the regulator, choose
the lower value of the two equations. Switching frequencies higher than these values will result in pulse skipping
or the lack of overcurrent protection during a short circuit.
The typical minimum on time, tonmin, is 130 ns for the TPS54140-Q1. For this example, the output voltage is 3.3 V
and the maximum input voltage is 18 V, which allows for a maximum switch frequency up to 1600 kHz when
including the inductor resistance, on resistance and diode voltage in Equation 12. To ensure overcurrent
runaway is not a concern during short circuits in your design use Equation 13 or the solid curve in Figure 42 to
determine the maximum switching frequency. With an maximum input voltage of 20 V, assuming a diode voltage
of 0.5 V, inductor resistance of 100 mΩ, switch resistance of 200 mΩ, an output current of 2.8 A, the maximum
switching frequency is approximately 1600 kHz.
Choosing the lower of the two values and adding some margin a switching frequency of 1200 kHz is used. To
determine the timing resistance for a given switching frequency, use Equation 11 or the curve in Figure 40.
The switching frequency is set by resistor Rt shown in Figure 51.
L1
10 mH
U1
TPS54140DGQ
BOOT
VIN
C2
C3
C4
2.2 mF 2.2 mF 0.1 mF
R3
EN
SS/TR
RT/CLK
332 kW
CSS
RT
0.01 mF
90.9 kW
R4
61.9 kW
D1
B220A
COMP
VSNS
PWRGD
CF
6.8 pF
COUT
+
47 mF/6.3 V
PH
GND
PwPd
8 - 18 V
3.3 V at 1.5 A
0.1 mF
C1
RC
76.8 kW
CC
2700 pF
R1
31.6 kW
R2
10 kW
Figure 51. High Frequency, 3.3-V Output Power Supply Design with Adjusted UVLO.
Copyright © 2009–2012, Texas Instruments Incorporated
29
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
Output Inductor Selection (LO)
To calculate the minimum value of the output inductor, use Equation 28.
KIND is a coefficient that represents the amount of inductor ripple current relative to the maximum output current.
The inductor ripple current will be filtered by the output capacitor. Therefore, choosing high inductor ripple
currents will impact the selection of the output capacitor since the output capacitor must have a ripple current
rating equal to or greater than the inductor ripple current. In general, the inductor ripple value is at the discretion
of the designer; however, the following guidelines may be used.
For designs using low ESR output capacitors such as ceramics, a value as high as KIND = 0.3 may be used.
When using higher ESR output capacitors, KIND = 0.2 yields better results. Since the inductor ripple current is
part of the PWM control system, the inductor ripple current should always be greater than 100 mA for
dependable operation. In a wide input voltage regulator, it is best to choose an inductor ripple current on the
larger side. This allows the inductor to still have a measurable ripple current with the input voltage at its
minimum.
For this design example, use KIND = 0.2 and the minimum inductor value is calculated to be 7.6 μH. For this
design, a nearest standard value was chosen: 10 μH. For the output filter inductor, it is important that the RMS
current and saturation current ratings not be exceeded. The RMS and peak inductor current can be found from
Equation 30 and Equation 31.
For this design, the RMS inductor current is 1.506 A and the peak inductor current is 1.62 A. The chosen
inductor is a MSS6132-103. It has a saturation current rating of 1.64 A and an RMS current rating of 1.9 A.
As the equation set demonstrates, lower ripple currents will reduce the output voltage ripple of the regulator but
will require a larger value of inductance. Selecting higher ripple currents will increase the output voltage ripple of
the regulator but allow for a lower inductance value.
The current flowing through the inductor is the inductor ripple current plus the output current. During power up,
faults or transient load conditions, the inductor current can increase above the calculated peak inductor current
level calculated above. In transient conditions, the inductor current can increase up to the switch current limit of
the device. For this reason, the most conservative approach is to specify an inductor with a saturation current
rating equal to or greater than the switch current limit rather than the peak inductor current.
Vinmax - Vout
Vout
Lo min =
´
Io ´ KIND
Vinmax ´ ƒsw
(28)
IRIPPLE £ IO ´ KIND
IL(rms) =
(IO )
2
1 æ VOUT ´ (Vinmax - VOUT ) ö
+
´ç
÷
÷
12 çè
Vinmax ´ LO ´ fSW
ø
ILpeak = Iout +
Iripple
2
(29)
2
(30)
(31)
Output Capacitor
There are three primary considerations for selecting the value of the output capacitor. The output capacitor will
determine the modulator pole, the output voltage ripple, and how the regulators responds to a large change in
load current. The output capacitance needs to be selected based on the more stringent of these three criteria.
The desired response to a large change in the load current is the first criteria. The output capacitor needs to
supply the load with current when the regulator can not. This situation would occur if there are desired hold-up
times for the regulator where the output capacitor must hold the output voltage above a certain level for a
specified amount of time after the input power is removed. The regulator also will temporarily not be able to
supply sufficient output current if there is a large, fast increase in the current needs of the load such as
transitioning from no load to a full load. The regulator usually needs two or more clock cycles for the control loop
30
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TPS54140-Q1
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SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
to see the change in load current and output voltage and adjust the duty cycle to react to the change. The output
capacitor must be sized to supply the extra current to the load until the control loop responds to the load change.
The output capacitance must be large enough to supply the difference in current for two clock cycles while only
allowing a tolerable amount of droop in the output voltage. Calculate the minimum output capacitance necessary
to accomplish this using Equation 32.
Where ΔIOUT is the change in output current, ƒsw is the regulators switching frequency and ΔVOUT is the allowable
change in the output voltage. For this example, the transient load response is specified as a 4% change in VOUT
for a load step from 0 A (no load) to 1.5 A (full load). For this example, ΔIOUT = 1.5-0 = 1.5 A and ΔVOUT = 0.04 ×
3.3 = 0.132 V. Using these numbers gives a minimum capacitance of 18.9 μF. This value does not take the ESR
of the output capacitor into account in the output voltage change. For ceramic capacitors, the ESR is usually
small enough to ignore in this calculation. Aluminum electrolytic and tantalum capacitors have higher ESR that
should be taken into account.
The catch diode of the regulator can not sink current so any stored energy in the inductor will produce an output
voltage overshoot when the load current rapidly decreases, see Figure 52. The output capacitor must also be
sized to absorb energy stored in the inductor when transitioning from a high load current to a lower load current.
The excess energy that gets stored in the output capacitor will increase the voltage on the capacitor. The
capacitor must be sized to maintain the desired output voltage during these transient periods. Use Equation 33 to
calculate the minimum capacitance to keep the output voltage overshoot to a desired value. Where L is the value
of the inductor, IOH is the output current under heavy load, IOL is the output under light load, VF is the final peak
output voltage, and Vi is the initial capacitor voltage. For this example, the worst case load step will be from 1.5
A to 0 A. The output voltage will increase during this load transition and the stated maximum in our specification
is 4% of the output voltage. This will make VF = 1.04 × 3.3 = 3.432. Vi is the initial capacitor voltage which is the
nominal output voltage of 3.3 V. Using these numbers in Equation 33 yields a minimum capacitance of 25.3 μF.
Use Equation 34 to calculate the minimum output capacitance needed to meet the output voltage ripple
specification. Where ƒsw is the switching frequency, Voripple is the maximum allowable output voltage ripple, and
Iripple is the inductor ripple current. Equation 34 yields 0.7 μF.
Equation 35 calculates the maximum ESR an output capacitor can have to meet the output voltage ripple
specification. Equation 35 indicates the ESR should be less than 147 mΩ.
The most stringent criteria for the output capacitor is 25.3 μF of capacitance to keep the output voltage in
regulation during an unload transient.
Additional capacitance de-ratings for aging, temperature and dc bias should be factored in which will increase
this minimum value. For this example, a 47-μF 6.3-V X7R ceramic capacitor with 5 mΩ of ESR will be used.
Capacitors generally have limits to the amount of ripple current they can handle without failing or producing
excess heat. An output capacitor that can support the inductor ripple current must be specified. Some capacitor
data sheets specify the Root Mean Square (RMS) value of the maximum ripple current. Equation 36 can be used
to calculate the RMS ripple current the output capacitor needs to support. For this application, Equation 36 yields
64.8 mA.
2 ´ DIOUT
COUT >
fSW ´ DVOUT
(32)
((I ) - (I ) )
´
((V ) - (V ) )
(33)
1
1
´
8 ´ fSW æ VOUT(ripple ) ö
ç
÷
ç IRIPPLE ÷
è
ø
(34)
2
OH
COUT > LO
2
f
COUT >
2
OL
2
i
Copyright © 2009–2012, Texas Instruments Incorporated
31
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
VOUT(ripple )
RESR =
IRIPPLE
ICOUT(rms) =
(35)
(
VOUT ´ VIN(max ) - VOUT
)
12 ´ VIN(max ) ´ LO ´ fSW
(36)
Catch Diode
The TPS54140-Q1 requires an external catch diode between the PH pin and GND. The selected diode must
have a reverse voltage rating equal to or greater than VIN(max). The peak current rating of the diode must be
greater than the maximum inductor current. The diode should also have a low forward voltage. Schottky diodes
are typically a good choice for the catch diode due to their low forward voltage. The lower the forward voltage of
the diode, the higher the efficiency of the regulator will be.
Typically, the higher the voltage and current ratings the diode has, the higher the forward voltage will be. Since
the design example has an input voltage up to 18 V, a diode with a minimum of 20 V reverse voltage will be
selected.
For the example design, the B220A Schottky diode is selected for its lower forward voltage and it comes in a
larger package size which has good thermal characteristics over small devices. The typical forward voltage of the
B220A is 0.50 volts.
The diode must also be selected with an appropriate power rating. The diode conducts the output current during
the off-time of the internal power switch. The off-time of the internal switch is a function of the maximum input
voltage, the output voltage, and the switching frequency. The output current during the off-time is multiplied by
the forward voltage of the diode which equals the conduction losses of the diode. At higher switch frequencies,
the ac losses of the diode need to be taken into account. The ac losses of the diode are due to the charging and
discharging of the junction capacitance and reverse recovery. Equation 37 is used to calculate the total power
dissipation, conduction losses plus ac losses, of the diode.
The B220A has a junction capacitance of 120 pF. Using Equation 37, the selected diode will dissipate 0.632
Watts. This power dissipation, depending on mounting techniques, should produce a 16°C temperature rise in
the diode when the input voltage is 18 V and the load current is 1.5 A.
If the power supply spends a significant amount of time at light load currents or in sleep mode consider using a
diode which has a low leakage current and slightly higher forward voltage drop.
PD =
(V
IN(max ) - VOUT
)´ I
VIN(max )
OUT
2
´ Vf d
+
C j ´ fSW ´ (VIN + Vf d)
2
(37)
Input Capacitor
The TPS54140-Q1 requires a high quality ceramic, type X5R or X7R, input decoupling capacitor of at least 3 μF
of effective capacitance and in some applications a bulk capacitance. The effective capacitance includes any dc
bias effects. The voltage rating of the input capacitor must be greater than the maximum input voltage. The
capacitor must also have a ripple current rating greater than the maximum input current ripple of the TPS54140Q1. The input ripple current can be calculated using Equation 38.
The value of a ceramic capacitor varies significantly over temperature and the amount of dc bias applied to the
capacitor. The capacitance variations due to temperature can be minimized by selecting a dielectric material that
is stable over temperature. X5R and X7R ceramic dielectrics are usually selected for power regulator capacitors
because they have a high capacitance to volume ratio and are fairly stable over temperature. The output
capacitor must also be selected with the dc bias taken into account. The capacitance value of a capacitor
decreases as the dc bias across a capacitor increases.
32
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
For this example design, a ceramic capacitor with at least a 20-V voltage rating is required to support the
maximum input voltage. Common standard ceramic capacitor voltage ratings include 4 V, 6.3 V, 10 V, 16 V, 25
V, 50 V or 100 V so a 25-V capacitor should be selected. For this example, two 2.2-μF, 25-V capacitors in
parallel have been selected. Table 1 shows a selection of high voltage capacitors. The input capacitance value
determines the input ripple voltage of the regulator. The input ripple voltage can be calculated using Equation 39.
Using the design example values, Ioutmax = 1.5 A, CIN = 4.4 μF, ƒSW = 1200 kHz, yields an input voltage ripple of
71 mV and an RMS input ripple current of 0.701 A.
Icirms = Iout ´
Vout
´
Vin min
(Vin min
- Vout )
Vin min
(38)
Iout max ´ 0.25
ΔVin =
Cin ´ ¦ sw
(39)
Table 1. Capacitor Types
VENDOR
VALUE (μF)
1 to 2.2
Murata
1 to 4.7
1
1 to 2.2
1 10 1.8
Vishay
1 to 1.2
1 to 3.9
1 to 1.8
1 to 2.2
TDK
1.5 to 6.8
1. to 2.2
1 to 3.3
1 to 4.7
AVX
1
1 to 4.7
1 to 2.2
EIA Size
1210
1206
2220
2225
1812
1210
1210
1812
VOLTAGE
DIALECTRIC
100 V
COMMENTS
GRM32 series
50 V
100 V
GRM31 series
50 V
50 V
100 V
VJ X7R series
50 V
100 V
100 V
50 V
100 V
50 V
X7R
C series C4532
C series C3225
50 V
100 V
50 V
X7R dielectric series
100 V
Slow Start Capacitor
The slow start capacitor determines the minimum amount of time it will take for the output voltage to reach its
nominal programmed value during power up. This is useful if a load requires a controlled voltage slew rate. This
is also used if the output capacitance is very large and would require large amounts of current to quickly charge
the capacitor to the output voltage level. The large currents necessary to charge the capacitor may make the
TPS54140-Q1 reach the current limit or excessive current draw from the input power supply may cause the input
voltage rail to sag. Limiting the output voltage slew rate solves both of these problems.
The slow start time must be long enough to allow the regulator to charge the output capacitor up to the output
voltage without drawing excessive current. Equation 40 can be used to find the minimum slow start time, TSS,
necessary to charge the output capacitor, COUT, from 10% to 90% of the output voltage, VOUT, with an average
slow start current of ISSAVG. In the example, to charge the 47 μF output capacitor up to 3.3 V while only allowing
the average input current to be 0.125 A would require a 1-ms slow start time.
Once the slow start time is known, the slow start capacitor value can be calculated using Equation 6. For the
example circuit, the slow start time is not too critical since the output capacitor value is 47 μF which does not
require much current to charge to 3.3 V. The example circuit has the slow start time set to an arbitrary value of 1ms which requires a 3.3-nF capacitor.
Cout ´ Vout ´ 0.8
Tss >
Issavg
(40)
Copyright © 2009–2012, Texas Instruments Incorporated
33
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
Bootstrap Capacitor Selection
A 0.1-μF ceramic capacitor must be connected between the BOOT and PH pins for proper operation. It is
recommended to use a ceramic capacitor with X5R or better grade dielectric. The capacitor should have a 10-V
or higher voltage rating.
Under Voltage Lock Out Set Point
The Under Voltage Lock Out (UVLO) can be adjusted using an external voltage divider on the EN pin of the
TPS54140-Q1. The UVLO has two thresholds, one for power up when the input voltage is rising and one for
power down or brown outs when the input voltage is falling. For the example design, the supply should turn on
and start switching once the input voltage increases above 7.25 V (enabled). After the regulator starts switching,
it should continue to do so until the input voltage falls below 6.25 V (UVLO stop).
The programmable UVLO and enable voltages are set using a resistor divider between VIN and ground to the
EN pin. Equation 2 through Equation 3 can be used to calculate the resistance values necessary. For the
example application, a 332 kΩ between VIN and EN and a 61.9 kΩ between EN and ground are required to
produce the 7.25- and 6.25-V start and stop voltages.
Output Voltage and Feedback Resistors Selection
For the example design, 10.0 kΩ was selected for R2. Using Equation 1, R1 is calculated as 31.25 kΩ. The
nearest standard 1% resistor is 31.6 kΩ. Due to current leakage of the VSENSE pin, the current flowing through
the feedback network should be greater than 1 μA in order to maintain the output voltage accuracy. This
requirement makes the maximum value of R2 equal to 800 kΩ. Choosing higher resistor values will decrease
quiescent current and improve efficiency at low output currents but may introduce noise immunity problems.
Compensation
There are several industry techniques used to compensate DC/DC regulators. The method presented here yields
high phase margins. For most conditions, the regulator will have a phase margin between 60 and 90 degrees.
The method presented here ignores the effects of the slope compensation that is internal to the TPS54140-Q1.
Since the slope compensation is ignored, the actual cross over frequency is usually lower than the cross over
frequency used in the calculations.
Use SwitcherPro software for a more accurate design.
The uncompensated regulator will have a dominant pole, typically located between 300 Hz and 3 kHz, due to the
output capacitor and load resistance and a pole due to the error amplifier. One zero exists due to the output
capacitor and the ESR. The zero frequency is higher than either of the two poles.
If left uncompensated, the double pole created by the error amplifier and the modulator would lead to an unstable
regulator. To stabilize the regulator, one pole must be canceled out. One design approach is to locate a
compensating zero at the modulator pole. Then select a cross over frequency that is higher than the modulator
pole. The gain of the error amplifier can be calculated to achieve the desired cross over frequency. The capacitor
used to create the compensation zero along with the output impedance of the error amplifier form a low
frequency pole to provide a minus one slope through the cross over frequency. Then a compensating pole is
added to cancel the zero due to the output capacitors ESR. If the ESR zero resides at a frequency higher than
the switching frequency then it can be ignored.
34
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
To compensate the TPS54140-Q1 using this method, first calculate the modulator pole and zero using the
following equations:
Ioutmax
¦p mod =
2 × p × Vout × Cout
(41)
Where IOUTMAX is the maximum output current, COUT is the output capacitance and VOUT is the nominal output
voltage.
1
¦ z mod =
2 ´ p ´ Resr × Cout
(42)
For the example design, the modulator pole is located at 1.5 kHz and the ESR zero is located at 338 kHz.
Next, the designer needs to select a crossover frequency which will determine the bandwidth of the control loop.
The cross over frequency must be located at a frequency at least five times higher than the modulator pole. The
cross over frequency must also be selected so that the available gain of the error amplifier at the cross over
frequency is high enough to allow for proper compensation.
Equation 47 is used to calculate the maximum cross over frequency when the ESR zero is located at a frequency
that is higher than the desired cross over frequency. This will usually be the case for ceramic or low ESR
tantalum capacitors. Aluminum electrolytic and tantalum capacitors will typically produce a modulator zero at a
low frequency due to their high ESR.
The example application is using a low ESR ceramic capacitor with 10 mΩ of ESR making the zero at 338 kHz.
This value is much higher than typical crossover frequencies so the maximum crossover frequency is calculated
using both Equation 43 and Equation 46.
Using Equation 46 gives a minimum crossover frequency of 7.6 kHz and Equation 43 gives a maximum
crossover frequency of 45.3 kHz.
A crossover frequency of 45 kHz is arbitrarily selected from this range.
Fc max £ 2100
Fc max £
Fc max £
Fc min
51442
Vout
Fpmod
Vout
for ceramic capacitors.
(43)
for Tantalum or Aluminum capacitors.
(44)
Fsw
for all cases.
5
³ 5 ´ Fpmod for all cases.
(45)
(46)
Once a cross over frequency, Fc, has been selected, the gain of the modulator at the cross over frequency is
calculated. The gain of the modulator at the cross over frequency is calculated using Equation 47 .
gm(PS ) ´ RLOAD ´ (2p ´ fC ´ COUT ´ RESR + 1)
GMOD( f c ) =
2p ´ fC ´ COUT ´ (RLOAD + RESR ) + 1
(47)
For the example problem, the gain of the modulator at the cross over frequency is 0.542. Next, the compensation
components are calculated. A resistor in series with a capacitor is used to create a compensating zero. A
capacitor in parallel to these two components forms the compensating pole. However, calculating the values of
these components varies depending on if the ESR zero is located above or below the cross over frequency. For
ceramic or low ESR tantalum output capacitors, the zero will usually be located above the cross over frequency.
For aluminum electrolytic and tantalum capacitors, the modulator zero is usually located lower in frequency than
the cross over frequency. For cases where the modulator zero is higher than the cross over frequency (ceramic
capacitors).
VOUT
RC =
GMOD( f c ) ´ gm(EA ) ´ VREF
(48)
1
Cc =
p × Rc × ¦p mod
Copyright © 2009–2012, Texas Instruments Incorporated
(49)
35
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
C¦ =
www.ti.com
Co × Resr
Rc
(50)
For cases where the modulator zero is less than the cross over frequency (aluminum or tantalum capacitors), the
equations are:
VOUT
RC =
GMOD( f c ) ´ f Z(mod) ´ gm(EA ) ´ VREF
(51)
1
p × Rc × ¦p mod
(52)
1
C¦ =
2 ´ p ´ Rc ´ ¦ z mod
(53)
Cc =
For the example problem, the ESR zero is located at a higher frequency compared to the cross over frequency
so Equation 50 through Equation 53 are used to calculate the compensation components. For the example
problem, the components are calculated to be: Rc= 76.2 kΩ, Cc= 2710 pF, and Cƒ =6.17 pF.
The calculated value of the Cƒ capacitor is not a standard value so a value of 2700 pF will be used, 6.8 pF is
used for Cc, and the Rc resistor sets the gain of the error amplifier which determines the cross over frequency.
The calculated Rc resistor is not a standard value, so 76.8 kΩ will be used.
APPLICATION CURVES
VIN
VO
VOUT
EN
IO
IL
Figure 52. Load Transmit
Figure 53. Startup With EN
VOUT
VOUT
IL
PH
VIN
IL
Figure 54. VIN Power Up
36
Figure 55. Output Ripple CCM
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
VOUT
VOUT
IL
IL
PH
PH
Figure 56. Output Ripple, DCM
Figure 57. Output Ripple, PSM
VIN
VIN
IL
IL
PH
PH
Figure 58. Input Ripple CCM
Figure 59. Input Ripple DCM
95
VI = 8 V
90
VO = 3.3 V,
fsw = 1200 kHz
85
VIN
Efficiency - %
80
IL
VI = 12 V
75
VI = 16 V
70
65
PH
60
55
50
0
Figure 60. Input Ripple PSM
Copyright © 2009–2012, Texas Instruments Incorporated
0.25
0.50
0.75
1
1.25
IL - Load Current - A
1.5
1.75
2
Figure 61. Efficiency vs Load Current
37
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
1.015
60
150
VI = 12 V
1.010
40
100
1.005
Phase - o
Gain - dB
50
20
0
Gain
0
-50
Regulation (%)
Phase
1.000
0.995
-100
-20
0.990
-150
-40
100
1-103
1-104
f - Frequency - Hz
1-105
0.985
0.00
1-106
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Load Current - A
Figure 62. Overall Loop Frequency Response
Figure 63. Regulation vs Load Current
1.015
IO = 0.5 A
1.010
Regulation (%)
1.005
1.000
0.995
0.990
0.985
5
10
15
20
VI - Input Voltage - V
Figure 64. Regulation vs Input Voltage
38
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
Power Dissipation Estimate
The following formulas show how to estimate the IC power dissipation under continuous conduction mode (CCM)
operation. These equations should not be used if the device is working in discontinuous conduction mode (DCM).
The power dissipation of the IC includes conduction loss (Pcon), switching loss (Psw), gate drive loss (Pgd) and
supply current (Pq).
Vout
Pcon = Io2 ´ RDS(on) ´
Vin
(54)
2
–9
PSW = VIN × fSW × IO × 0.25×10 sec/V
(55)
–9
Pgd = VIN × 3×10 Asec × fSW
(56)
Pq = 116µA × VIN
(57)
Where:
IOUT is the output current (A).
RDS(ON) is the on-resistance of the high-side MOSFET (Ω).
VOUT is the output voltage (V).
VIN is the input voltage (V).
ƒSW is the switching frequency (Hz).
So
Ptot = Pcon + Psw + Pgd + Pq
(58)
For given TA,
TJ = TA + Rth ´ Ptot
(59)
For given TJMAX = 150°C
TAmax = TJmax - Rth ´ Ptot
(60)
Where:
Ptot is the total device power dissipation (W).
TA is the ambient temperature (°C).
TJ is the junction temperature (°C).
Rth is the thermal resistance of the package (°C/W).
TJMAX is maximum junction temperature (°C).
TAMAX is maximum ambient temperature (°C).
There will be additional power losses in the regulator circuit due to the inductor ac and dc losses, the catch diode
and trace resistance that will impact the overall efficiency of the regulator.
Copyright © 2009–2012, Texas Instruments Incorporated
39
TPS54140-Q1
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
www.ti.com
Layout
Layout is a critical portion of good power supply design. There are several signals paths that conduct quickly
changing currents or voltages that can interact with stray inductance or parasitic capacitance to generate noise
or degrade the power supply performance. To reduce these problems, the VIN pin should be bypassed to ground
with a low-ESR ceramic bypass capacitor with X5R or X7R dielectric. Care should be taken to minimize the loop
area formed by the bypass capacitor connections, the VIN pin, and the anode of the catch diode. See Figure 65
for a PCB layout example. The GND pin should be tied directly to the thermal pad under the IC and the exposed
thermal pad.
The thermal pad should be connected to any internal PCB ground planes using multiple vias directly under the
IC. The PH pin should be routed to the cathode of the catch diode and to the output inductor. Because the PH
connection is the switching node, the catch diode and output inductor should be located very close to the PH
pins, and the area of the PCB conductor minimized to prevent excessive capacitive coupling. For operation at full
rated load, the top side ground area must provide adequate heat dissipating area. The RT/CLK pin is sensitive to
noise so the RT resistor should be located as close as possible to the IC and routed with minimal lengths of
trace. The additional external components can be placed approximately as shown. It may be possible to obtain
acceptable performance with alternate PCB layouts; however, this layout has been shown to produce good
results and is meant as a guideline.
Vout
Output
Capacitor
Topside
Ground
Area
Input
Bypass
Capacitor
Vin
UVLO
Adjust
Resistors
Slow Start
Capacitor
Output
Inductor
Route Boot Capacitor
Trace on another layer to
provide wide path for
topside ground
BOOT
Catch
Diode
PH
VIN
GND
EN
COMP
SS/TR
VSENSE
RT/CLK
PWRGD
Frequency
Set Resistor
Compensation
Network
Resistor
Divider
Thermal VIA
Signal VIA
Figure 65. PCB Layout Example
40
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54140-Q1
www.ti.com
SLVSA24C – OCTOBER 2009 – REVISED AUGUST 2012
REVISION HISTORY
Changes from Revision B (March 2011) to Revision C
Page
•
Changed regulated output to input ....................................................................................................................................... 1
•
Changed 92 to 93% and 107 to 109% in description. .......................................................................................................... 1
•
Updated Abs Max footnote ................................................................................................................................................... 2
•
Changed enable threshold to –50 mV for Input current and changed typ values for input current and hysteresis
current ................................................................................................................................................................................... 3
•
Removed input current max value; changed typ value from ±0.9 to –0.9 ............................................................................ 3
•
Changed error amplifier test condition from ±2 µA to –2 µA; changed gM to gmin the parameter description ..................... 3
•
Changed enable threshold to –50 mV for Input current and changed typ values for input current and hysteresis
current ................................................................................................................................................................................... 4
•
Inserted page break in front of current limit section ............................................................................................................. 4
•
Changed RT/CLK low threshold min value from 0.5 to 0.45 ................................................................................................ 4
•
Added (Fault) and (Good) to VSENSE falling and rising ...................................................................................................... 4
•
Changed Figure 21 to match 57060-Q1 ............................................................................................................................. 10
•
Changed "are added to the COMP pin to ground" to "are added from the COMP pin to ground" ..................................... 14
•
Changed "use the UVLO adjust registers" to "use the UVLO adjust resistors" .................................................................. 14
•
Changed "Each cycle the switch current" to "During each cycle the switch current" ......................................................... 20
•
Changed "high voltage. Thus, requesting the" to "high voltage, thus requesting the" ....................................................... 24
•
Changed "Equation 32 shows the minimum output capacitance necessary to accomplish this" to "Calculate the
minimum output capacitance necessary to accomplish this using Equation 32." .............................................................. 31
•
Changed "Equation 33 is used to calculate the" to "Use Equation 33 to calculate the minimum" ..................................... 31
•
Changed "Equation 34 calculates" to "Use equation 34 to"; changed "Equation 35 yields 0.7 µF" to "Equation 34
yields 0.7 µF" ...................................................................................................................................................................... 31
•
Changed "input voltage ripple" to "input ripple voltage" ..................................................................................................... 33
Copyright © 2009–2012, Texas Instruments Incorporated
41
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