35N06

UMW R UMW 35N06 60V N-Channel Power Mosfet General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 60V,ID =35A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Switching Low ON Resistance(Rdson≤29mΩ) Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switch circuit of adaptor and charger; LED backlight driver; Synchronousrectification Package Marking and Ordering Information Device Marking UMW 35N06 Device Device Package Reel Size Tape width Quantity UMW 35N06 TO-252 330mm 12mm 2500 Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V 35 A 24.5 A IDM 100 A EAS 56.2 mJ PD 36.2 W TSTG -55 to +150 ℃ TJ -55 to +150 ℃ TC=25℃ Continuous Drain Current TC=100℃ Pulsed Drain Current 1) Single Puise Avalanche Energy 2) Maximum Power Dissipation TC=25℃ Storage Temperature Range Operating Junction Temperature Range ID Thermal Resistance Parameter Symbol Min. Typ. Max Unit Thermal Resistance,Junction-to-Case RθJC - - 3.45 ℃/W Thermal Resistance,Junction to Ambient RθJA - - 111.5 ℃/W www.umw-ic.com 1 友台半导体有限公司 UMW R UMW 35N06 60V N-Channel Power Mosfet Electrical Characteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions VGS=0V,IDS=250uA Min. Typ. Max. Unit 60 - - V Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 uA Gate-Body Leakage IGSS VGS=±20V,VDS=0V - - ±100 nA ON CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Gate Threshold Voltage VGS(TH) VDS=VGS,IDS=250uA 1 1.5 2 V Drain-Source On-State Resistance RDS(ON) VGS=10V,IDS=19A - 23 29 mΩ VGS=4.5V,IDS=19A - 30 38 mΩ Conditions Min. Typ. Max. Unit - 939 - - 73.5 - - 52.7 - - 1.9 - Ω Min. Typ. Max. Unit - 8.4 - - 8.5 - - 35.4 - - 4.8 - - 21.2 - - 3.6 - - 5.5 - DYNAMIC CHARACTERISTICS Parameter Symbol Input Capacitance CiSS Output Capacitance COSS Reverse Transfer Capacitance Crss Gate Resisitance Rg VDS =30V, VGS = 0V, f=1MHz VDD=0V,VGS=0V, F=1MHz pF SWITCHING CHARACTERISTICS Parameter Turn-On Delay Time Rise Time Symbol Td(on) tr Turn-Off Delay Time Fall Time Conditions VGS=10V,VDs=30V, RGEN=3Ω Td(off) ID=20A tf Total Gate Charge Qg Gate to Source Gate Charge Qgs Gate to Drain“Miller”Charge Qgd VDS=30V,IDS=20A, VGS=10V ns nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Parameter Symbol Conditions Min. Typ. Max. Unit VSD VGS=0V,IDS=20A - - 1.2 V Reverse Recovery Time trr TJ=25℃,IF=20A - 18.8 - nS Reverse Recovery Charge Qrr di/dt=100A/us - 13.4 - nC Drain-Source Diode Forward Voltage Notes: 1) Repetitive rating; pulse width limited by maximum junction temperature . 2) L=0.5mH,VDD=30V,Ias=15A Start TJ=25℃ 3) Recommend soldering temperature defined by IPC/JEDEC J-STD 020 www.umw-ic.com 2 友台半导体有限公司 UMW R www.umw-ic.com UMW 35N06 60V N-Channel Power Mosfet 3 友台半导体有限公司 UMW R www.umw-ic.com UMW 35N06 60V N-Channel Power Mosfet 4 友台半导体有限公司 UMW R www.umw-ic.com UMW 35N06 60V N-Channel Power Mosfet 5 友台半导体有限公司 UMW R www.umw-ic.com UMW 35N06 60V N-Channel Power Mosfet 6 友台半导体有限公司 UMW R www.umw-ic.com UMW 35N06 60V N-Channel Power Mosfet 7 友台半导体有限公司 UMW R www.umw-ic.com UMW 35N06 60V N-Channel Power Mosfet 8 友台半导体有限公司