0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
AO3409A

AO3409A

  • 厂商:

    UMW(友台)

  • 封装:

    SOT23-3

  • 描述:

    表面贴装型 P 通道 30 V 2.6A(Ta) 1.4W(Ta) SOT-23

  • 数据手册
  • 价格&库存
AO3409A 数据手册
UMW R UMW AO3409A Features SOT–23 VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1. GATE 2. SOURCE 3. DRAIN D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS -30 V Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS TA=25 ID TA=70 Pulsed Drain Current Power Dissipation IDM TA=25 PD TA=70 Junction and Storage Temperature Range www.umw-ic.com V -2.2 A -20 1.4 1 W 125 /W RthJC 80 /W TJ, TSTG -55 to 150 Themal Resistance. Junction-to-Ambient Themal Resistance. Junction-to-Case 20 -2.6 RthJA 1 友台半导体有限公司 UMW R UMW AO3409A Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Symbol VDSS Testconditions Min VDS=-24V, VGS=0V ,TJ=55 -5 100 nA -1.9 -3 V IGSS VDS=0V, VGS= 20V Gate Threshold Voltage VGS(th) VDS=VGS ID=-250 A Static Drain-Source On-Resistance rDS(ON) -1 VGS=-10V, ID=-2.6A VGS=-10V, ID=-2.6A TJ=125 VGS=-4.5V, ID=-2A gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Total Gate Charge (10V) Total Gate Charge (4.5V) Gate Source Charge Rg VGS=-4.5V, VDS=-5V -5 VDS=-5V, ID=-5A 3 97 130 135 150 166 200 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-2.6A A m m A 3.8 302 Qg Qgs V -1 Gate-Body leakage current ID(ON) Unit VDS=-24V, VGS=0V IDSS On state drain current Max -30 ID=250 A, VGS=0V Zero Gate Voltage Drain Current Forward Transconductance Typ S 370 pF 50.3 pF 37.8 pF 12 18 6.8 9 nC 2.4 nC 1.6 nC Gate Drain Charge Qgd 0.95 nC Turn-On DelayTime tD(on) 7.5 ns Turn-On Rise Time tr 3.2 ns Turn-Off DelayTime tD(off) VGS=-10V, VDS=-15V, RL=5.8 ,RGEN=3 17 ns 6.8 ns Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr IF=-2.6A, dI/dt=100A/ s 16.8 Body Diode Reverse Recovery Charge Qrr IF=-2.6A, dI/dt=100A/ s 10 Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD IS=-1A,VGS=0V -0.82 22 ns nC -2 A -1 V * Repetitive rating, pulse width limited by junction temperature. www.umw-ic.com 2 友台半导体有限公司 R UMW UMW AO3409A ■ Typical Characterisitics 10 20 -8V VDS=-5V 8 15 -6V 10 -5.5V -5V 25°C -ID(A) -ID (A) -10V VGS=-4.5V -4V -3.5V 5 0 1 2 3 4 125°C 4 2 -3.0V 0 6 0 5 1 2 250 Normalized On-Resistance RDS(ON) (mΩ) 4 5 6 1.6 200 150 VGS=-4.5V 100 VGS=-10V 50 VGS=-10V 1.4 VGS=-4.5V 1.2 ID=-2A 1 0.8 0 1 2 3 4 5 6 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 300 1.0E+00 250 ID=-2A 200 1.0E-01 125°C -IS (A) RDS(ON) (mΩ) 3 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 150 100 25°C 1.0E-02 125°C 1.0E-03 25°C 1.0E-04 50 1.0E-05 1.0E-06 0 3 4 5 6 7 8 9 10 www.umw-ic.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3 友台半导体有限公司 UMW R UMW AO3409A ■ Typical Characterisitics 10 500 VDS=-15V ID=-2.6A 9 8 400 Capacitance (pF) -VGS (Volts) 7 6 5 4 3 2 Ciss 300 200 Coss 100 1 0 0 1 2 3 4 5 6 Crss 0 7 0 -Qg (nC) Figure 7: Gate-Charge Characteristics TJ(Max)=150°C TA=25°C 100µs 10ms 10s DC 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) ZθJA Normalized Transient Thermal Resistance 30 10 0 0.001 0.1 10 25 5 1s 0.1 20 TJ(Max)=150°C 18 TA=25°C 15 10µs 1ms 0.1s 1.0 15 20 RDS(ON) limited 10.0 10 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100.0 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.umw-ic.com 4 友台半导体有限公司 UMW R UMW AO3409A Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° A96X 19 Marking U Ordering information Order code Package Baseqty Deliverymode UMW AO3409A SOT-23 3000 Tape and reel www.umw-ic.com 5 友台半导体有限公司
AO3409A 价格&库存

很抱歉,暂时无法提供与“AO3409A”相匹配的价格&库存,您可以联系我们找货

免费人工找货
AO3409A
    •  国内价格
    • 1+0.17470

    库存:2480

    AO3409A
      •  国内价格
      • 10+0.37412
      • 100+0.30219
      • 300+0.26622
      • 3000+0.23922
      • 6000+0.21762
      • 9000+0.20682

      库存:6023