AO4410

UMW R UMW AO4410 N-Channel MOSFET D ■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON) ＜ 5.5mΩ (VGS = 10V) G S ● RDS(ON) ＜ 6.2mΩ (VGS = 4.5V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25℃ ID TA=70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient IDM TA=25℃ PD TA=70℃ t ≤ 10s RthJA Steady-State Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range www.umw-ic.com 1 Unit V 18 15 A 80 3.1 2 W 40 75 RthJL 24 TJ 150 Tstg -55 to 150 ℃/W ℃ UTD Semiconductor Co.,Limited UMW R UMW AO4410 N-Channel MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage VGS(th) Test Conditions ID=250 uA, VGS=0V Min Typ 30 1 VDS=24V, VGS=0V, TJ=55℃ 5 VDS=0V, VGS=±12V VDS=VGS , ID=250uA RDS(On) VGS=10V, ID=18A 0.8 ID(ON) VGS=4.5V, VDS=5V Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge Qg Gate Source Charge Qgs ±100 nA 1.5 V 7.4 TJ=125℃ VDS=5V, ID=18A A 102 S 9130 10500 VGS=0V, VDS=15V, f=1MHz pF 625 387 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=18A 0.4 0.5 72.4 85 Qgd 16.8 td(on) 11 15 Turn-On Rise Time tr 7 11 Turn-Off DelayTime td(off) Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω IF= 18A, dI/dt= 100A/us 99 135 13 19.5 33 40 22.2 IS=1A,VGS=0V Ω nC 13.4 Turn-On DelayTime tf mΩ 6.2 80 Gate Drain Charge Turn-Off Fall Time uA 5.5 VGS=4.5V, ID=15A On State Drain Current Unit V VDS=24V, VGS=0V VGS=10V, ID=18A Static Drain-Source On-Resistance Max ns 30 nC 4.5 A 1 V Note : The static characteristics in Figures 1 to 6 are obtained using