AO4486

UMW R AO4486 N-Channel MOSFET General Description D The AO4486 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. G Product Summary S VDS (V) = 100V ID = 4.2A RDS(ON) < 79mΩ (VGS = 10V) RDS(ON) < 94mΩ (VGS = 4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Units V ±20 V 4.2 ID TA=70°C Maximum 100 3.4 A Pulsed Drain Current C IDM 31 Avalanche Current C IAS, IAR 14 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 10 mJ Power Dissipation B TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead www.umw-ic.com 3.1 PD -55 to 150 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 Typ 31 59 16 RθJA RθJL 1 °C Max 40 75 24 Units °C/W °C/W °C/W UTD Semiconductor Co.,Limited UMW R AO4486 N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.6 ID(ON) On state drain current VGS=10V, VDS=5V 31 RDS(ON) Static Drain-Source On-Resistance Min 100 Typ VDS=100V, VGS=0V TJ=55°C Max Units V 1 µA 5 2.2 ±100 nA 2.7 V A VGS=10V, ID=5A 69 79 mΩ VGS=4.5V, ID=3A 82 94 mΩ V gFS Forward Transconductance VDS=5V, ID=3A 20 VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 3.5 A 620 778 942 pF VGS=0V, VDS=50V, f=1MHz 38 55 81 pF 13 24 35 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.45 2.2 Ω S IS Maximum Body-Diode Continuous Current Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qg(10V) Total Gate Charge 13 16.3 20 nC Qg(4.5V) Total Gate Charge 6.4 8.1 10 nC 2.2 2.8 3.4 nC 2.4 4.1 5.8 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=10V, VDS=50V, ID=3.0A 6 =16.7Ω, VGS=10V, VDS=50V, RL=16.7Ω , RGEN=3Ω ns 2.5 ns ns 21 2.4 IF=3A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3A, dI/dt=500A/µs ns ns 14 21 28 65 94 123 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using