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ADS4229IRGC25

ADS4229IRGC25

  • 厂商:

    ROCHESTER(罗切斯特)

  • 封装:

    64-VFQFN Exposed Pad

  • 描述:

    FLASH METHOD, 12-BIT ADC, 2-CHAN

  • 数据手册
  • 价格&库存
ADS4229IRGC25 数据手册
Sample & Buy Product Folder Support & Community Tools & Software Technical Documents ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 ADS4229 Dual-Channel, 12-Bit, 250-MSPS Ultralow-Power ADC 1 Features 3 Description • • The ADS4229 is a member of the ADS42xx ultralowpower family of dual-channel, 12-bit and 14-bit analog-to-digital converters (ADCs). Innovative design techniques are used to achieve high dynamic performance, while consuming extremely low power with a 1.8-V supply. This topology makes the ADS4229 well-suited for multi-carrier, wide-bandwidth communications applications. 1 • • • • • • • Maximum Sample Rate: 250 MSPS Ultralow Power with Single 1.8-V Supply: – 545-mW Total Power at 250 MSPS High Dynamic Performance: – 80.8-dBc SFDR at 170 MHz – 69.4-dBFS SNR at 170 MHz Crosstalk: > 90 dB at 185 MHz Programmable Gain Up to 6 dB for SNR and SFDR Trade-off DC Offset Correction Output Interface Options: – 1.8-V Parallel CMOS Interface – DDR LVDS With Programmable Swing: – Standard Swing: 350 mV – Low Swing: 200 mV Supports Low Input Clock Amplitude Down to 200 mVPP Package: 9-mm × 9-mm, 64-Pin Quad Flat No-Lead (QFN) Package The ADS4229 has gain options that can be used to improve spurious-free dynamic range (SFDR) performance at lower full-scale input ranges. This device also includes a dc offset correction loop that can be used to cancel the ADC offset. Both double data rate (DDR) low-voltage differential signaling (LVDS) and parallel complementary metal oxide semiconductor (CMOS) digital output interfaces are available in a compact QFN-64 PowerPAD™ package. The device includes internal references while the traditional reference pins and associated decoupling capacitors have been eliminated. The ADS4229 is specified over the industrial temperature range (–40°C to +85°C). Device Information(1) 2 Applications • • • Wireless Communications Infrastructure Software Defined Radio Power Amplifier Linearization PART NUMBER ADS4229 PACKAGE VQFN (64) BODY SIZE (NOM) 9.00 mm × 9.00 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. ADS4229 Block Diagram ADS4229 INP_A INM_A LVDS DA0P DA0M Sampling Circuit DA12P DA12M CLKP CLK Gen CLKM INP_B INM_B VCM 12-bit ADC CLKOUTP CLKOUTM DB0P DB0M Sampling Circuit 12-bit ADC DB12P DB12M Reference 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Device Comparison Table..................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 4 5 9 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 7.11 7.12 Absolute Maximum Ratings ...................................... 9 ESD Ratings.............................................................. 9 Recommended Operating Conditions....................... 9 Thermal Information ................................................ 10 Electrical Characteristics: ADS4229 (250 MSPS)... 10 Electrical Characteristics: General .......................... 12 Digital Characteristics ............................................. 13 LVDS and CMOS Modes Timing Requirements..... 14 LVDS Timings at Lower Sampling Frequencies ..... 15 CMOS Timings at Lower Sampling Frequencies .. 15 Serial Interface Timing Characteristics ................. 17 Reset Timing (Only when Serial Interface is Used)........................................................................ 18 7.13 Typical Characteristics .......................................... 19 8 Detailed Description ............................................ 26 8.1 Overview ................................................................. 26 8.2 8.3 8.4 8.5 8.6 9 Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ Programming........................................................... Register Maps ......................................................... 26 27 29 33 37 Application and Implementation ........................ 47 9.1 Application Information............................................ 47 9.2 Typical Application ................................................. 53 10 Power Supply Recommendations ..................... 55 10.1 Sharing DRVDD and AVDD Supplies ................... 55 10.2 Using DC/DC Power Supplies .............................. 55 10.3 Power Supply Bypassing ...................................... 55 11 Layout................................................................... 55 11.1 Layout Guidelines ................................................. 55 11.2 Layout Example .................................................... 56 12 Device and Documentation Support ................. 57 12.1 12.2 12.3 12.4 12.5 12.6 Device Support...................................................... Documentation Support ........................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 57 58 59 59 59 59 13 Mechanical, Packaging, and Orderable Information ........................................................... 59 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision B (August 2012) to Revision C • Page Added Pin Configuration and Functions section, ESD Rating table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1 Changes from Revision A (October 2011) to Revision B Page • Changed first sub-bullet of High Dynamic Performance Features bullet ............................................................................... 1 • Changed footnote 1 in CMOS Timings at Lower Sampling Frequencies............................................................................. 15 • Changed row D5 and consolidated the two DB rows in Table 10........................................................................................ 37 • Changed Register Address D5h........................................................................................................................................... 46 • Changed title of Register Address DBh, consolidated two DBh registers into one.............................................................. 46 Changes from Original (June 2011) to Revision A Page • Changed ADS4229 Input Common-Mode Voltage parameter in Table 1 .............................................................................. 4 • Changed AC power-supply rejection ratio parameter test condition in ADS4229 Electrical Characteristics table .............. 11 • Updated Figure 3.................................................................................................................................................................. 16 • Updated Figure 25................................................................................................................................................................ 22 • Updated Figure 31................................................................................................................................................................ 23 • Updated Figure 32................................................................................................................................................................ 23 • Changed Time Constant, TCCLK × 1/fS (ms) column and footnote 1 in Table 3 ................................................................... 28 2 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 • Changed Revised Channel Standby section ........................................................................................................................ 28 • Changed High-performance mode parameter description in High-Performance Modes table ............................................ 33 • Changed description of bits[7:2] in Register Address 40h ................................................................................................... 41 • Updated Register Address D7h and Register Address D8h tables...................................................................................... 46 • Updated first paragraph of Analog Input section .................................................................................................................. 48 • Updated first paragraph of Driving Circuit subsection .......................................................................................................... 49 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 3 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com 5 Device Comparison Table (1) 65 MSPS 125 MSPS 160 MSPS 250 MSPS ADS422x 12-bit family (1) ADS4222 ADS4225 ADS4226 ADS4229 ADS424x 14-bit family (1) ADS4242 ADS4245 ADS4246 ADS4249 See Table 1 for details on migrating from the ADS62P49 family. The ADS4229 is pin-compatible with the previous generation ADS62P49 data converter; this similar architecture enables easy migration. However, there are some important differences between the two device generations, summarized in Table 1. Table 1. Migrating from the ADS62P49 ADS62P49 FAMILY ADS4229 PINS Pin 22 is NC (not connected) Pin 22 is AVDD Pins 38 and 58 are DRVDD Pins 38 and 58 are NC (do not connect, must be floated) Pins 39 and 59 are DRGND Pins 39 and 59 are NC (do not connect, must be floated) SUPPLY AVDD is 3.3 V AVDD is 1.9 V DRVDD is 1.8 V No change INPUT COMMON-MODE VOLTAGE VCM is 1.5 V VCM is 0.95 V SERIAL INTERFACE Protocol: 8-bit register address and 8-bit register data No change in protocol New serial register map EXTERNAL REFERENCE Supported 4 Not supported Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 6 Pin Configuration and Functions DA0P 42 DA0M DB8M 8 41 NC 40 NC DB10M 10 39 NC DB10P 11 38 NC RESET 12 37 CTRL3 SCLK 13 36 CTRL2 SDATA 14 35 CTRL1 50 DA6 49 DRGND 52 DA8 51 DA7 54 DA10 53 DA9 56 UNUSED 55 DA11 58 NC 57 CLKOUT 60 NC 59 NC 62 DB0 6 43 DA1 DB7 7 42 DA0 DB8 8 41 NC DB9 9 40 NC DB10 10 39 NC DB11 11 38 NC RESET 12 37 CTRL3 SCLK 13 36 CTRL2 SDATA 14 35 CTRL1 SEN 15 34 AVDD AVDD 16 33 AVDD Thermal Pad (Connected to DRGND) AGND 17 AGND 31 DA2 DB6 AGND 32 INP_A 29 INM_A 30 AGND 27 AGND 28 CLKP 25 CLKM 26 VCM 23 AGND 24 AVDD 22 AGND 21 INP_B 19 AVDD 16 AVDD INM_B 20 AVDD 33 AGND 17 34 AGND 18 SEN 15 (1) 44 AGND 31 43 7 9 5 AGND 32 6 DB6P DB8P DA3 DB5 DA2M DB6M Thermal Pad (Connected to DRGND) 45 INP_A 29 44 5 4 INM_A 30 DB4P DA4 DB4 AGND 27 DA2P AGND 28 45 46 CLKP 25 4 3 CLKM 26 DB4M DA5 DB3 VCM 23 DA4M AGND 24 DA4P 46 DRVDD 47 AVDD 22 47 3 48 2 AGND 21 2 DB2P 1 DB2 INP_B 19 DB2M DRVDD INM_B 20 DRVDD 61 NC 64 SDOUT 48 1 63 DB1 50 DA6M 49 DRGND 52 DA8M 51 DA6P 54 DA10M 53 DA8P 56 CLKOUTM 55 DA10P 58 NC 57 CLKOUTP 60 NC 59 NC 62 DB0M 61 NC RGC Package (CMOS Mode) 64-Pin VQFN Top View AGND 18 DRVDD 63 DB0P 64 SDOUT RGC Package (LVDS Mode) 64-Pin VQFN Top View The PowerPAD is connected to DRGND. NOTE: NC = do not connect; must float. Pin Functions (LVDS Mode) PIN NAME NO. I/O DESCRIPTION 17 18 21 AGND 24 27 I Analog ground I Analog power supply 28 31 32 16 AVDD 22 23 34 CLKM 26 I Differential clock negative input CLKP 25 I Differential clock positive input CTRL1 35 I Digital control input pins. Together, they control the various power-down modes. CTRL2 36 I Digital control input pins. Together, they control the various power-down modes. CTRL3 37 I Digital control input pins. Together, they control the various power-down modes. CLKOUTP 57 O Differential output clock, true Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 5 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com Pin Functions (LVDS Mode) (continued) PIN NAME NO. CLKOUTM 56 DA0M 42 DA0P 43 DA2M 44 DA2P 45 DA4M 46 DA4P 47 DA6M 50 DA6P 51 DA8M 52 DA8P 53 DA10M 54 DA10P 55 DB0M 62 DB0P 63 DB2M 2 DB2P 3 DB4M 4 DB4P 5 DB6M 6 DB6P 7 DB8M 8 DB8P 9 DB10M 10 DB10P 11 DRGND DRVDD 49 PAD 1 48 I/O DESCRIPTION O Differential output clock, complement O Channel A differential output data pair, D0 and D1 multiplexed O Channel A differential output data D2 and D3 multiplexed O Channel A differential output data D4 and D5 multiplexed O Channel A differential output data D6 and D7 multiplexed O Channel A differential output data D8 and D9 multiplexed O Channel A differential output data D10 and D11 multiplexed O Channel B differential output data pair, D0 and D1 multiplexed O Channel B differential output data D2 and D3 multiplexed O Channel B differential output data D4 and D5 multiplexed O Channel B differential output data D6 and D7 multiplexed O Channel B differential output data D8 and D9 multiplexed O Channel B differential output data D10 and D11 multiplexed I Output buffer ground I Output buffer supply INP_A 29 I Differential analog positive input, channel A INM_A 30 I Differential analog negative input, channel A INP_B 19 I Differential analog positive input, channel B INM_B 20 I Differential analog negative input, channel B 38 39 40 NC 41 58 — Do not connect, must be floated 59 60 61 RESET 6 12 I Serial interface RESET input. When using the serial interface mode, the internal registers must be initialized through a hardware RESET by applying a high pulse on this pin or by using the software reset option; refer to the Serial Interface Configuration section. In parallel interface mode, the RESET pin must be permanently tied high. SCLK and SEN are used as parallel control pins in this mode. This pin has an internal 150-kΩ pull-down resistor. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 Pin Functions (LVDS Mode) (continued) PIN I/O DESCRIPTION NAME NO. SCLK 13 I This pin functions as a serial interface clock input when RESET is low. It controls the low-speed mode selection when RESET is tied high; see Table 7 for detailed information. This pin has an internal 150-kΩ pull-down resistor. SDATA 14 I Serial interface data input; this pin has an internal 150-kΩ pull-down resistor. SDOUT 64 O This pin functions as a serial interface register readout when the READOUT bit is enabled. When READOUT = 0, this pin is put into a high-impedance state. VCM 23 O This pin outputs the common-mode voltage (0.95 V) that can be used externally to bias the analog input pins Pin Functions (CMOS Mode) PIN NAME NO. I/O DESCRIPTION 17 18 21 AGND 24 27 I Analog ground I Analog power supply 28 31 32 16 AVDD 22 33 34 CLKM 26 I Differential clock negative input CLKOUT 57 O CMOS output clock CLKP 25 I Differential clock positive input CTRL1 35 I Digital control input pins. Together, they control various power-down modes. CTRL2 36 I Digital control input pins. Together, they control various power-down modes. CTRL3 37 I Digital control input pins. Together, they control various power-down modes. DA0 42 DA1 43 DA2 44 DA3 45 DA4 46 DA5 47 DA6 50 O Channel A ADC output data bits, CMOS levels DA7 51 DA8 52 DA9 53 DA10 54 DA11 55 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 7 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com Pin Functions (CMOS Mode) (continued) PIN NAME NO. DB0 62 DB1 63 DB2 2 DB3 3 DB4 4 DB5 5 DB6 6 DB7 7 DB8 8 DB9 9 DB10 10 DB11 11 DRGND DRVDD NC 49 PAD 1 48 — I/O DESCRIPTION O Channel B ADC output data bits, CMOS levels I Output buffer ground I Output buffer supply — Do not connect, must be floated RESET 12 I Serial interface RESET input. When using the serial interface mode, the internal registers must be initialized through a hardware RESET by applying a high pulse on this pin or by using the software reset option; refer to the Serial Interface Configuration section. In parallel interface mode, the RESET pin must be permanently tied high. SDATA and SEN are used as parallel control pins in this mode. This pin has an internal 150-kΩ pull-down resistor. INM_A 30 I Differential analog negative input, channel A INP_A 29 I Differential analog positive input, channel A INM_B 20 I Differential analog negative input, channel B INP_B 19 I Differential analog positive input, channel B SCLK 13 I This pin functions as a serial interface clock input when RESET is low. It controls the low-speed mode when RESET is tied high; see Table 7 for detailed information. This pin has an internal 150-kΩ pull-down resistor. SDATA 14 I Serial interface data input; this pin has an internal 150-kΩ pull-down resistor. SDOUT 64 O This pin functions as a serial interface register readout when the READOUT bit is enabled. When READOUT = 0, this pin is put into a high-impedance state. SEN 15 I This pin functions as a serial interface enable input when RESET is low. It controls the output interface and data format selection when RESET is tied high; see Table 8 for detailed information. This pin has an internal 150-kΩ pull-up resistor to AVDD. VCM 23 O This pin outputs the common-mode voltage (0.95 V) that can be used externally to bias the analog input pins UNUSED 56 — This pin is not used in the CMOS interface 8 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 7 Specifications 7.1 Absolute Maximum Ratings (1) MIN MAX UNIT Supply voltage, AVDD –0.3 2.1 V Supply voltage, DRVDD –0.3 2.1 V Voltage between AGND and DRGND –0.3 0.3 V Voltage between AVDD to DRVDD (when AVDD leads DRVDD) –2.4 2.4 V Voltage between DRVDD to AVDD (when DRVDD leads AVDD) –2.4 2.4 V INP_A, INM_A, INP_B, INM_B –0.3 Minimum (1.9, AVDD + 0.3) V CLKP, CLKM (2) –0.3 AVDD + 0.3 V RESET, SCLK, SDATA, SEN, CTRL1, CTRL2, CTRL3 –0.3 3.9 V Voltage applied to input pins Operating free-air temperature, TA –40 Operating junction temperature, TJ Storage temperature, Tstg (1) (2) –65 85 °C 125 °C 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. When AVDD is turned off, it is recommended to switch off the input clock (or ensure the voltage on CLKP, CLKM is less than |0.3 V|). This configuration prevents the ESD protection diodes at the clock input pins from turning on. 7.2 ESD Ratings V(ESD) (1) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) VALUE UNIT 2000 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions Over operating free-air temperature range, unless otherwise noted. MIN NOM MAX UNIT Analog supply voltage, AVDD 1.7 1.8 1.9 V Digital supply voltage, DRVDD 1.7 1.8 1.9 V SUPPLIES ANALOG INPUTS Differential input voltage range 2 Input common-mode voltage VPP VCM ± 0.05 V (1) 400 MHz Maximum analog input frequency with 1-VPP input amplitude (1) 600 MHz Maximum analog input frequency with 2-VPP input amplitude CLOCK INPUT Input clock sample rate Low-speed mode enabled (2) Low-speed mode disabled (2) (by default after reset) Sine wave, ac-coupled Input clock amplitude differential (VCLKP – VCLKM) 1 80 MSPS 80 250 MSPS 1.5 VPP LVPECL, ac-coupled 0.2 1.6 VPP LVDS, ac-coupled 0.7 VPP LVCMOS, single-ended, ac-coupled 1.5 V Input clock duty cycle Low-speed mode disabled 35% 50% 65% Low-speed mode enabled 40% 50% 60% (1) (2) See Theory of Operation See Serial Interface Configuration for details on programming the low-speed mode. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 9 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com Recommended Operating Conditions (continued) Over operating free-air temperature range, unless otherwise noted. MIN NOM MAX UNIT DIGITAL OUTPUTS Maximum external load capacitance from each output pin to DRGND, CLOAD Differential load resistance between the LVDS output pairs (LVDS mode), RLOAD Operating free-air temperature, TA 5 pF 100 Ω –40 +85 °C 7.4 Thermal Information ADS4229 THERMAL METRIC (1) RGC (VQFN) UNIT 64 PINS RθJA Junction-to-ambient thermal resistance 23.9 °C/W RθJC(top) Junction-to-case (top) thermal resistance 10.9 °C/W RθJB Junction-to-board thermal resistance 4.3 °C/W ψJT Junction-to-top characterization parameter 0.1 °C/W ψJB Junction-to-board characterization parameter 4.4 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 0.6 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.5 Electrical Characteristics: ADS4229 (250 MSPS) Typical values are at +25°C, AVDD = 1.8 V, DRVDD = 1.8 V, 50% clock duty cycle, –1 dBFS differential analog input, LVDS interface, and 0-dB gain, unless otherwise noted. Minimum and maximum values are across the full temperature range: TMIN = –40°C to TMAX = +85°C, AVDD = 1.8 V, and DRVDD = 1.8 V. PARAMETER TEST CONDITIONS MIN TYP Resolution Signal-to-noise ratio 12 SNR dBFS fIN = 70 MHz 70.3 dBFS fIN = 100 MHz 70.1 dBFS fIN = 170 MHz, 0-dB gain 69.8 dBFS 67.8 dBFS 65.5 68.2 dBFS fIN = 20 MHz 70 dBFS fIN = 70 MHz 69.7 dBFS fIN = 100 MHz 69.8 dBFS fIN = 170 MHz, 0-dB gain 68.1 dBFS 67.5 dBFS 67.6 dBFS fIN = 170 MHz, 3-dB gain 65 fIN = 300 MHz Spurious-free dynamic range SFDR fIN = 20 MHz 80 dBc fIN = 70 MHz 79 dBc fIN = 100 MHz 82 dBc fIN = 170 MHz, 0-dB gain 80 dBc 81 dBc fIN = 300 MHz 77 dBc fIN = 20 MHz 78 dBc fIN = 70 MHz 77 dBc fIN = 100 MHz 79 dBc fIN = 170 MHz, 0-dB gain 76 dBc 78 dBc 75 dBc fIN = 170 MHz, 3-dB gain Total harmonic distortion THD fIN = 170 MHz, 3-dB gain fIN = 300 MHz 10 Bits 70.5 fIN = 300 MHz SINAD UNIT fIN = 20 MHz fIN = 170 MHz, 3-dB gain Signal-to-noise and distortion ratio MAX Submit Documentation Feedback 71 69.5 Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 Electrical Characteristics: ADS4229 (250 MSPS) (continued) Typical values are at +25°C, AVDD = 1.8 V, DRVDD = 1.8 V, 50% clock duty cycle, –1 dBFS differential analog input, LVDS interface, and 0-dB gain, unless otherwise noted. Minimum and maximum values are across the full temperature range: TMIN = –40°C to TMAX = +85°C, AVDD = 1.8 V, and DRVDD = 1.8 V. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT fIN = 20 MHz 80 dBc fIN = 70 MHz 79 dBc fIN = 100 MHz 81 dBc fIN = 170 MHz, 0-dB gain 80 dBc 81 dBc fIN = 300 MHz 76 dBc fIN = 20 MHz 85 dBc fIN = 70 MHz 87 dBc fIN = 100 MHz 96 dBc fIN = 170 MHz, 0-dB gain 80 dBc 87 dBc fIN = 300 MHz 84 dBc fIN = 20 MHz 92 dBc fIN = 70 MHz 95 dBc fIN = 100 MHz 94 dBc fIN = 170 MHz, 0-dB gain 93 dBc 92 dBc fIN = 300 MHz 89 dBc f1 = 46 MHz, f2 = 50 MHz, each tone at –7 dBFS 98 dBFS f1 = 185 MHz, f2 = 190 MHz, each tone at –7 dBFS 84 dBFS Crosstalk 20-MHz full-scale signal on channel under observation; 170-MHz full-scale signal on other channel 95 dB Input overload recovery Recovery to within 1% (of full-scale) for 6 dB overload with sine-wave input 1 Clock cycle AC power-supply rejection ratio PSRR For 50-mVPP signal on AVDD supply, up to 10 MHz 30 dB Effective number of bits ENOB fIN = 170 MHz Second-harmonic distortion HD2 fIN = 170 MHz, 3-dB gain Third-harmonic distortion HD3 fIN = 170 MHz, 3-dB gain Worst spur (other than second and third harmonics) fIN = 170 MHz, 3-dB gain Two-tone intermodulation distortion IMD Differential nonlinearity DNL fIN = 170 MHz Integrated nonlinearity INL fIN = 170 MHz 71 71 77 11.15 –0.8 LSBs ±0.5 1.5 LSBs ±1.8 ±4 LSBs Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 11 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com 7.6 Electrical Characteristics: General Typical values are at +25°C, AVDD = 1.8 V, DRVDD = 1.8 V, 50% clock duty cycle, and –1 dBFS differential analog input, unless otherwise noted. Minimum and maximum values are across the full temperature range: TMIN = –40°C to TMAX = +85°C, AVDD = 1.8 V, and DRVDD = 1.8 V. PARAMETER MIN TYP MAX UNIT ANALOG INPUTS Differential input voltage range 2 VPP 0.75 kΩ Differential input capacitance (at 200 MHz) 3.7 pF Analog input bandwidth (with 50-Ω source impedance, and 50-Ω termination) 550 MHz Analog input common-mode current (per input pin of each channel) 1.5 µA/MSPS Differential input resistance (at 200 MHz) Common-mode output voltage VCM 0.95 VCM output current capability (1) V 4 mA DC ACCURACY Offset error –15 Temperature coefficient of offset error 2.5 15 0.003 Gain error as a result of internal reference inaccuracy alone EGREF Gain error of channel alone EGCHAN Temperature coefficient of EGCHAN –2 2 ±0.1 mV mV/°C 1 %FS %FS Δ%/°C 0.002 POWER SUPPLY IAVDD Analog supply current 167 190 mA IDRVDD Output buffer supply current LVDS interface, 350-mV swing with 100-Ω external termination, fIN = 2.5 MHz 136 160 mA IDRVDD Output buffer supply current CMOS interface, no load capacitance, fIN = 2.5 MHz (2) 94 mA Analog power 301 mW Digital power LVDS interface, 350-mV swing with 100-Ω external termination, fIN = 2.5 MHz 245 mW Digital power CMOS interface, 8-pF external load capacitance (2) fIN = 2.5 MHz 169 mW Global power-down (1) (2) 12 25 mW VCM changes to 0.87 V when the HIGH PERF MODE[7:2] serial register bits are set. In CMOS mode, the DRVDD current scales with the sampling frequency, the load capacitance on output pins, input frequency, and the supply voltage (see CMOS Interface Power Dissipation). Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 7.7 Digital Characteristics At AVDD = 1.8 V and DRVDD = 1.8 V, unless otherwise noted. DC specifications refer to the condition where the digital outputs do not switch, but are permanently at a valid logic level '0' or '1'. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT DIGITAL INPUTS (RESET, SCLK, SDATA, SEN, CTRL1, CTRL2, CTRL3) (1) High-level input voltage High-level input current Low-level input current 1.3 All digital inputs support 1.8-V and 3.3-V CMOS logic levels Low-level input voltage V 0.4 V SDATA, SCLK (2) VHIGH = 1.8 V 10 µA SEN (3) VHIGH = 1.8 V 0 µA SDATA, SCLK VLOW = 0 V 0 µA SEN VLOW = 0 V 10 µA DIGITAL OUTPUTS, CMOS INTERFACE (DA[13:0], DB[13:0], CLKOUT, SDOUT) High-level output voltage DRVDD – 0.1 DRVDD Low-level output voltage 0 V 0.1 V Output capacitance (internal to device) pF DIGITAL OUTPUTS, LVDS INTERFACE High-level output differential voltage VODH With an external 100-Ω termination 270 350 430 mV Low-level output differential voltage VODL With an external 100-Ω termination –430 –350 –270 mV Output common-mode voltage VOCM 0.9 1.05 1.25 V (1) (2) (3) SCLK, SDATA, and SEN function as digital input pins in serial configuration mode. SDATA, SCLK have internal 150-kΩ pull-down resistor. SEN has an internal 150-kΩ pull-up resistor to AVDD. Because the pull-up is weak, SEN can also be driven by 1.8 V or 3.3 V CMOS buffers. DAn_P DBn_P Logic 0 VODL = -350 mV Logic 1 (1) VODH = +350 mV (1) DAn_M DBn_M VOCM GND (1) With external 100-Ω termination. Figure 1. LVDS Output Voltage Levels Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 13 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com 7.8 LVDS and CMOS Modes Timing Requirements (1) Typical values are at +25°C, AVDD = 1.8 V, DRVDD = 1.8 V, sampling frequency = 250 MSPS, sine wave input clock, CLOAD = 5 pF, and RLOAD = 100 Ω, unless otherwise noted. Minimum and maximum values are across the full temperature range: TMIN = –40°C to TMAX = +85°C, AVDD = 1.8 V, and DRVDD = 1.7 V to 1.9 V. PARAMETER tA DESCRIPTION Aperture delay tJ Aperture delay matching Between the two channels of the same device Variation of aperture delay Between two devices at the same temperature and DRVDD supply MIN TYP MAX 0.5 0.8 1.1 Aperture jitter Wakeup time Time to valid data after coming out of STANDBY mode Time to valid data after coming out of GLOBAL power-down mode UNIT ns ±70 ps ±150 ps 140 fS rms 50 100 µs 100 500 µs Default latency after reset 16 Clock cycles Digital functions enabled (EN DIGITAL = 1) 24 Clock cycles ADC latency (2) DDR LVDS MODE (3) Data setup time Data valid (4) to zero-crossing of CLKOUTP tH Data hold time Zero-crossing of CLKOUTP to data becoming invalid (4) tPDI Clock propagation delay Input clock rising edge cross-over to output clock rising edge cross-over LVDS bit clock duty cycle Duty cycle of differential clock, (CLKOUTPCLKOUTM) 48% tRISE, tFALL Data rise time, Data fall time Rise time measured from –100 mV to +100 mV Fall time measured from +100 mV to –100 mV 1 MSPS ≤ Sampling frequency ≤ 250 MSPS 0.13 ns tCLKRISE, tCLKFALL Output clock rise time, Output clock fall time Rise time measured from –100 mV to +100 mV Fall time measured from +100 mV to –100 mV 1 MSPS ≤ Sampling frequency ≤ 250 MSPS 0.13 ns tSU 0.6 0.88 ns 0.33 0.55 ns 5 6 7.5 ns PARALLEL CMOS MODE Clock propagation delay Input clock rising edge cross-over to output clock rising edge cross-over Output clock duty cycle Duty cycle of output clock, CLKOUT 1 MSPS ≤ Sampling frequency ≤ 200 MSPS tRISE, tFALL Data rise time, Data fall time Rise time measured from 20% to 80% of DRVDD Fall time measured from 80% to 20% of DRVDD 1 MSPS ≤ Sampling frequency ≤ 200 MSPS 0.7 ns tCLKRISE, tCLKFALL Output clock rise time Output clock fall time Rise time measured from 20% to 80% of DRVDD Fall time measured from 80% to 20% of DRVDD 1 MSPS ≤ Sampling frequency ≤ 200 MSPS 0.7 ns tPDI (1) (2) (3) (4) 14 4.5 6.2 8.5 ns 50% Timing parameters are ensured by design and characterization and not tested in production. At higher frequencies, tPDI is greater than one clock period and overall latency = ADC latency + 1. Measurements are done with a transmission line of 100-Ω characteristic impedance between the device and the load. Setup and hold time specifications take into account the effect of jitter on the output data and clock. Data valid refers to a logic high of +100 mV and a logic low of –100 mV. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 7.9 LVDS Timings at Lower Sampling Frequencies Typical values are at +25°C, AVDD = 1.8 V, DRVDD = 1.8 V, sampling frequency = 250 MSPS, sine wave input clock, CLOAD = 5 pF, and RLOAD = 100 Ω, unless otherwise noted. Minimum and maximum values are across the full temperature range: TMIN = –40°C to TMAX = +85°C, AVDD = 1.8 V, and DRVDD = 1.7 V to 1.9 V. SAMPLING FREQUENCY (MSPS) MIN TYP 65 5.9 80 4.5 125 SETUP TIME (ns) tPDI, CLOCK PROPAGATION DELAY (ns) HOLD TIME (ns) MAX MIN TYP 6.6 0.35 5.2 0.35 2.3 2.9 160 1.5 185 200 230 MAX MIN TYP MAX 0.6 5 6 7.5 0.6 5 6 7.5 0.35 0.6 5 6 7.5 2 0.33 0.55 5 6 7.5 1.3 1.6 0.33 0.55 5 6 7.5 1.1 1.4 0.33 0.55 5 6 7.5 0.76 1.06 0.33 0.55 5 6 7.5 7.10 CMOS Timings at Lower Sampling Frequencies Typical values are at +25°C, AVDD = 1.8 V, DRVDD = 1.8 V, sampling frequency = 250 MSPS, sine wave input clock, CLOAD = 5 pF, and RLOAD = 100 Ω, unless otherwise noted. Minimum and maximum values are across the full temperature range: TMIN = –40°C to TMAX = +85°C, AVDD = 1.8 V, and DRVDD = 1.7 V to 1.9 V. TIMINGS SPECIFIED WITH RESPECT TO CLKOUT SAMPLING FREQUENCY (MSPS) (1) SETUP TIME (1) (ns) MIN TYP 65 6.1 80 4.7 125 tPDI, CLOCK PROPAGATION DELAY (ns) HOLD TIME (1) (ns) MAX MIN TYP 6.7 6.7 5.2 5.3 2.7 3.1 160 1.6 185 200 MAX MIN TYP MAX 7.5 4.5 6.2 8.5 6 4.5 6.2 8.5 3.1 3.6 4.5 6.2 8.5 2.1 2.3 2.8 4.5 6.2 8.5 1.1 1.6 1.9 2.4 4.5 6.2 8.5 1 1.4 1.7 2.2 4.5 6.2 8.5 In CMOS mode, setup time is measured from the beginning of data valid to 50% of the CLKOUT rising edge, whereas hold time is measured from 50% of the CLKOUT rising edge to data becoming invalid. Data valid refers to a logic high of 1.26 V and a logic low of 0.54 V. CLKM Input Clock CLKP tPDI Output Clock CLKOUT tSU Output Data (1) DAn, DBn tH Dn (1) Dn = bits D0, D1, D2, and so forth, of channels A and B. Figure 2. CMOS Interface Timing Diagram Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 15 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com N+4 N+3 N+2 N + 18 N + 17 N + 16 N+1 Sample N Input Signal tA Input Clock CLKP CLKM CLKOUTM CLKOUTP tPDI tH DDR LVDS 16 Clock Cycles tSU (1) (2) Output Data DAnP/M, DBnP/M E O E O N - 16 E O N - 15 E O N - 14 E O O E N - 13 E N - 12 O N-1 O E N O E E O E N+1 tPDI CLKOUT tSU Parallel CMOS 16 Clock Cycles Output Data DAn, DBn N - 16 N - 15 N - 14 tH (1) N - 13 N-1 N N+1 (1) ADC latency after reset. At higher sampling frequencies, tPDI is greater than one clock cycle, which then makes the overall latency = ADC latency + 1. (2) E = even bits (D0, D2, D4, and so forth); O = odd bits (D1, D3, D5, and so forth). Figure 3. Latency Timing Diagram 16 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 CLKOUTM CLKOUTP DA0, DB0 D0 D1 D0 D1 DA2, DB2 D2 D3 D2 D3 DA4, DB4 D4 D5 D4 D5 DA6, DB6 D6 D7 D6 D7 DA8, DB8 D8 D9 D8 D9 DA10, DB10 D10 D11 D10 D11 Sample N Sample N + 1 Figure 4. LVDS Interface Timing Diagram 7.11 Serial Interface Timing Characteristics See (1) . PARAMETER MIN TYP UNIT 20 MHz SCLK frequency (equal to 1/tSCLK) tSLOADS SEN to SCLK setup time 25 ns tSLOADH SCLK to SEN hold time 25 ns tDSU SDATA setup time 25 ns tDH SDATA hold time 25 ns (1) > DC MAX fSCLK Typical values at +25°C; minimum and maximum values across the full temperature range: TMIN = –40°C to TMAX = +85°C, AVDD = 1.8 V, and DRVDD = 1.8 V, unless otherwise noted. Register Address SDATA A7 A6 A5 A4 A3 Register Data A2 A1 A0 D7 D6 D5 tSCLK D4 tDSU D3 D2 D1 D0 tDH SCLK tSLOADS tSLOADH SEN RESET Figure 5. Serial Interface Timing Diagram Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 17 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com 7.12 Reset Timing (Only when Serial Interface is Used) See (1) . PARAMETER TEST CONDITIONS MIN t1 Power-on delay Delay from AVDD and DRVDD power-up to active RESET pulse t2 Reset pulse width Active RESET signal pulse width t3 Register write delay Delay from RESET disable to SEN active (1) TYP MAX 1 UNIT ms 10 ns 1 100 µs ns Typical values at +25°C; minimum and maximum values across the full temperature range: TMIN = –40°C to TMAX = +85°C, unless otherwise noted. Power Supply AVDD, DRVDD t1 RESET t3 t2 SEN NOTE: A high pulse on the RESET pin is required in the serial interface mode when initialized through a hardware reset. For parallel interface operation, RESET must be permanently tied high. Figure 6. Reset Timing Diagram 18 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 7.13 Typical Characteristics 7.13.1 Typical Characteristics: ADS4229 At TA = +25°C, AVDD = 1.8 V, DRVDD = 1.8 V, maximum rated sampling frequency, sine wave input clock, 1.5 VPP differential clock amplitude, 50% clock duty cycle, –1-dBFS differential analog input, High-Performance Mode enabled, 0-dB gain, DDR LVDS output interface, and 32k point FFT, unless otherwise noted. 0 0 SFDR = 85.9 dBc SNR = 70.6 dBFS SINAD = 70.3 dBFS THD = 82.1 dBc −20 −20 −40 Amplitude (dB) Amplitude (dB) −40 −60 −60 −80 −80 −100 −100 −120 SFDR = 80.9 dBc SNR = 69.7 dBFS SINAD = 69.3 dBFS THD = 78.8 dBc 0 25 50 75 Frequency (MHz) 100 −120 125 0 Figure 7. Input Signal (10 MHz) 100 125 0 SFDR = 78.3 dBc SNR = 68.2 dBFS SINAD = 67.8 dBFS THD = 77.2 dBc −20 Each Tone at −7 dBFS Amplitude fIN1 = 185.1 MHz fIN2 = 190.1 MHz Two−Tone IMD = 81 dBFS SFDR = 93.2 dBFS −20 −40 Amplitude (dB) −40 Amplitude (dB) 50 75 Frequency (MHz) Figure 8. Input Signal (150 MHz) 0 −60 −60 −80 −80 −100 −100 −120 25 0 25 50 75 Frequency (MHz) 100 −120 125 Figure 9. Input Signal (300 MHz) 0 25 50 75 Frequency (MHz) 100 125 Figure 10. Two-Tone Input Signal 86 Each Tone at −36 dBFS Amplitude fIN1 = 185.1 MHz fIN2 = 190.1 MHz Two−Tone IMD = 99.9 dBFS SFDR = 104.8 dBFS −20 0 84 82 80 SFDR (dBc) Amplitude (dB) −40 −60 78 76 −80 74 −100 72 −120 0 25 50 75 Frequency (MHz) 100 125 70 0 50 100 150 200 250 300 350 400 Input Frequency (MHz) Figure 11. Two-Tone Input Signal Figure 12. SFDR vs Input Frequency Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 19 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com Typical Characteristics: ADS4229 (continued) At TA = +25°C, AVDD = 1.8 V, DRVDD = 1.8 V, maximum rated sampling frequency, sine wave input clock, 1.5 VPP differential clock amplitude, 50% clock duty cycle, –1-dBFS differential analog input, High-Performance Mode enabled, 0-dB gain, DDR LVDS output interface, and 32k point FFT, unless otherwise noted. 73 88 72 86 71 84 70 82 SFDR (dBc) SNR (dBFS) 69 68 67 80 78 76 66 74 65 64 72 63 70 0 50 100 150 200 250 300 350 400 70 MHz 150 MHz 0 0.5 1 Input Frequency (MHz) Figure 13. SNR vs Input Frequency 1.5 2 2.5 3 3.5 4 Digital Gain (dB) 220 MHz 400 MHz 4.5 5 5.5 6 Figure 14. SFDR vs Gain and Input Frequency 70 73 110 Input Frequency = 40 MHz 72.5 100 69 90 72 80 71.5 70 71 60 70.5 50 70 67 66 SNR (dBFS) SFDR (dBc,dBFS) SINAD (dBFS) 68 65 64 63 SFDR (dBc) SFDR (dBFS) SNR 40 70 MHz 150 MHz 0 0.5 1 1.5 220 MHz 400 MHz 2 2.5 3 3.5 4 Digital Gain (dB) 4.5 5 5.5 30 −50 6 Figure 15. SINAD vs Gain and Input Frequency 0 69 71 Input Frequency = 40 MHz 72 80 71.5 70 71 60 70.5 50 70 82 70.5 81 70 80 69.5 79 69 SNR (dBFS) 90 SFDR (dBc) 72.5 SNR (dBFS) SFDR (dBc,dBFS) −10 83 Input Frequency = 150 MHz 100 69.5 40 20 −50 −40 −30 −20 Amplitude (dBFS) −10 68.5 78 SFDR (dBc) SFDR (dBFS) SNR 30 69 0 68.5 Figure 17. Performance vs Input Amplitude 20 −30 −20 Amplitude (dBFS) Figure 16. Performance vs Input Amplitude 73 110 −40 69.5 SFDR SNR 77 0.8 0.85 0.9 0.95 Input CommonMode Voltage (V) 1 68 Figure 18. Performance vs Input Common-Mode Voltage Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 Typical Characteristics: ADS4229 (continued) At TA = +25°C, AVDD = 1.8 V, DRVDD = 1.8 V, maximum rated sampling frequency, sine wave input clock, 1.5 VPP differential clock amplitude, 50% clock duty cycle, –1-dBFS differential analog input, High-Performance Mode enabled, 0-dB gain, DDR LVDS output interface, and 32k point FFT, unless otherwise noted. 72 89 83 71.5 87 82 71 81 70.5 80 70 79 69.5 78 69 84 Input Frequency = 40 MHz Input Frequency = 150 MHz 85 SFDR (dBc) SNR (dBFS) SFDR (dBc) 83 81 79 77 73 0.85 0.9 0.95 Input CommonMode Voltage (V) 1 68 71 −40 Figure 19. Performance vs Input Common-Mode Voltage −15 AVDD = 1.9 V AVDD = 1.95 V AVDD = 2 V 10 35 Temperature (°C) 71.5 82 Input Frequency = 40 MHz Input Frequency = 150 MHz 71.5 81 71 71 80 70.5 79 70 78 69.5 SFDR (dBc) SNR (dBFS) 85 Figure 20. SFDR vs Temperature and AVDD Supply 72 70.5 70 AVDD = 1.7 V AVDD = 1.75 V AVDD = 1.8 V AVDD = 1.85 V 69.5 69 −40 −15 AVDD = 1.9 V AVDD = 1.95 V AVDD = 2 V 10 35 Temperature (°C) 69 77 SFDR SNR 60 76 1.7 85 Figure 21. SNR vs Temperature and AVDD Supply 1.75 1.8 1.85 1.9 DRVDD Supply (V) 1.95 2 68.5 Figure 22. Performance vs DRVDD Supply Voltage 72.5 89 70.5 83 Input Frequency = 40 MHz Input Frequency = 150 MHz 72 82 70 85 71.5 81 69.5 83 71 80 69 81 70.5 79 68.5 79 70 78 68 77 69.5 77 67.5 69 76 75 SFDR (dBc) 87 SNR (dBFS) SFDR (dBc) 60 67 SFDR SNR 73 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 SNR (dBFS) 76 0.8 AVDD = 1.7 V AVDD = 1.75 V AVDD = 1.8 V AVDD = 1.85 V 68.5 SFDR SNR SNR (dBFS) 77 75 SFDR SNR 68.5 2.2 75 0.2 Differential Clock Amplitude (VPP) 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 66.5 2.2 Differential Clock Amplitudes (VPP) Figure 23. Performance vs Input Clock Amplitude Figure 24. Performance vs Input Clock Amplitude Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 21 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com Typical Characteristics: ADS4229 (continued) At TA = +25°C, AVDD = 1.8 V, DRVDD = 1.8 V, maximum rated sampling frequency, sine wave input clock, 1.5 VPP differential clock amplitude, 50% clock duty cycle, –1-dBFS differential analog input, High-Performance Mode enabled, 0-dB gain, DDR LVDS output interface, and 32k point FFT, unless otherwise noted. 0 72 88 Input Frequency = 40 MHz 50 mVPP Signal Superimposed on VCM −5 84 71 −10 82 70.5 −15 80 70 −20 78 69.5 76 69 74 68.5 72 68 −40 70 67.5 −45 68 67 −50 66.5 −55 66 −60 SNR THD 66 64 25 30 35 40 45 50 55 60 Input Clock Duty Cycle (%) 65 70 75 CMRR (dB) 71.5 SNR (dBFS) THD (dBc) Input Frequency = 10 MHz 86 Figure 25. Performance vs Input Clock Duty Cycle −25 −30 −35 −10 −15 -60 fIN - fCM = 30 MHz fCM = 10 MHz Input Frequency = 10 MHz 50 mVPP Signal Superimposed on AVDD Supply −5 PSRR (dB) Amplitude (dB) -40 300 0 fIN = 40 MHz fCM = 10 MHz, 50 mVPP SFDR = 81.7 dBc Amplitude (fIN) = -1 dBFS Amplitude (fCM) = -102.7 dBFS Amplitude (fIN + fCM) = -93.9 dBFS Amplitude (fIN - fCM) = 92.1 dBFS -20 50 100 150 200 250 Frequency of Input Common−Mode Signal (MHz) Figure 26. CMRR vs Test Signal Frequency 0 fIN = 40 MHz 0 fIN + fCM = 40 MHz -80 −20 −25 −30 −35 −40 -100 −45 −50 -120 0 25 75 50 125 100 0 50 Frequency (MHz) 0 350 fIN = 10 MHz fPSRR = 2 MHz, 50 mVPP Amplitude (fIN) = -1 dBFS Amplitude (fPSRR) = -95.1 dBFS Amplitude (fIN + fPSRR) = -96.4 dBFS Amplitude (fIN - fPSRR) = -96.8 dBFS -20 AVDD = 1.8 V Input Frequency = 2.5 MHz 310 270 Analog Power (mW) Amplitude (dB) -40 -60 fPSRR fIN - fPSRR 300 Figure 28. PSRR vs Test Signal Frequency Figure 27. CMRR Plot fIN 100 150 200 250 Frequency of Signal on Supply (MHz) fIN + fPSRR 230 190 -80 150 -100 110 70 -120 0 5 10 15 20 25 30 35 40 45 50 Frequency (MHz) Figure 29. PSRR Plot 22 0 25 50 75 100 125 150 175 Sampling Speed (MSPS) 200 225 250 Figure 30. Analog Power vs Sampling Frequency Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 Typical Characteristics: ADS4229 (continued) At TA = +25°C, AVDD = 1.8 V, DRVDD = 1.8 V, maximum rated sampling frequency, sine wave input clock, 1.5 VPP differential clock amplitude, 50% clock duty cycle, –1-dBFS differential analog input, High-Performance Mode enabled, 0-dB gain, DDR LVDS output interface, and 32k point FFT, unless otherwise noted. 260 320 Fin = 2.5 MHz 240 220 280 260 180 DRVDD Power (mW) DRVDD Power (mW) 200 160 140 120 100 80 240 220 200 180 160 140 60 40 120 LVDS, 350mV Swing LVDS, 200mV Swing CMOS 20 0 Default EN Digital = 1 EN Digital = 1, Offset Correction Enabled 300 0 25 50 75 100 125 150 175 Sampling Speed (MSPS) 200 225 100 250 G001 Figure 31. Digital Power LVDS CMOS 80 0 25 50 75 100 125 150 175 Sampling Speed (MSPS) 200 225 250 G001 Figure 32. Digital Power in Various Modes Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 23 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com 7.13.2 Typical Characteristics: Contour All graphs are at +25°C, AVDD = 1.8 V, DRVDD = 1.8 V, maximum rated sampling frequency, sine wave input clock. 1.5 VPP differential clock amplitude, 50% clock duty cycle, –1-dBFS differential analog input, High-Performance Mode enabled, 0-dB gain, DDR LVDS output interface, and 32k point FFT, unless otherwise noted. 250 240 82 Sampling Frequency (MSPS) 220 200 82 82 82 79 75 82 79 180 82 160 85 140 75 82 79 85 88 120 88 85 71 82 82 100 88 80 91 60 0 50 79 75 85 100 150 200 250 300 350 400 Input Frequency (MHz) 76 74 72 70 78 80 82 84 86 88 90 SFDR (dBc) Figure 33. Spurious-Free Dynamic Range (0-dB Gain) 250 240 82 85 76 76 85 220 Sampling Frequency (MSPS) 79 79 82 200 82 85 180 79 82 160 85 85 85 140 79 82 87 120 87 89 100 80 91 87 89 85 79 82 60 0 50 100 150 200 250 300 350 400 Input Frequency (MHz) 74 76 78 80 82 84 86 88 90 SFDR (dBc) Figure 34. Spurious-Free Dynamic Range (6-dB Gain) 24 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 Typical Characteristics: Contour (continued) All graphs are at +25°C, AVDD = 1.8 V, DRVDD = 1.8 V, maximum rated sampling frequency, sine wave input clock. 1.5 VPP differential clock amplitude, 50% clock duty cycle, –1-dBFS differential analog input, High-Performance Mode enabled, 0-dB gain, DDR LVDS output interface, and 32k point FFT, unless otherwise noted. 250 240 69.8 70.6 Sampling Frequency (MSPS) 220 68.6 69.8 70.2 67.7 68.2 69.4 200 69 180 160 69.8 70.2 140 67.7 68.6 68.2 69.4 70.6 67.2 69 120 100 70.2 80 69.8 69.4 70.6 68.2 68.6 67.2 67.7 60 0 50 100 150 200 250 300 350 400 Input Frequency (MHz) 67.5 67 68 68.5 69 69.5 70 70.5 SNR (dBFS) Figure 35. Signal-to-Noise Ratio (0-dB Gain) 250 240 220 Sampling Frequency (MSPS) 65.9 66.2 66.5 66.2 200 64.5 65.3 65.6 65 65.9 66.2 64.5 180 64 65.9 66.2 160 64.5 66.2 65.6 65.3 65 65.9 140 66.5 66.2 120 100 80 65.6 65.9 66.5 65.3 65 60 0 50 100 150 200 250 300 350 400 Input Frequency (MHz) 64.5 64 65 65.5 66 66.5 SNR (dBFS) Figure 36. Signal-to-Noise Ratio (6-dB Gain) Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 25 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com 8 Detailed Description 8.1 Overview The ADS4229 belongs to TI's ultra low-power family of dual-channel, 12-bit analog-to-digital converters (ADCs). High performance is maintained while reducing power for power sensitive applications. In addition to its low power and high performance, the ADS4229 has a number of digital features and operating modes to enable design flexibility. 8.2 Functional Block Diagram AVDD AGND DRVDD DRGND LVDS Interface DA0P DA0M DA2P DA2M DA4P INP_A Sampling Circuit INM_A Digital and DDR Serializer 12-Bit ADC DA4M DA6P DA6M DA8P DA8M DA10P DA10M CLKP Output Clock Buffer CLOCKGEN CLKM CLKOUTP CLKOUTM DB0P DB0M DB2P DB2M DB4P INP_B Sampling Circuit INM_B Digital and DDR Serializer 12-Bit ADC DB4M DB6P DB6M DB8P DB8M DB10P DB10M 26 Submit Documentation Feedback CTRL3 CTRL1 SDOUT CTRL2 SEN SCLK RESET ADS4229 SDATA Control Interface Reference VCM Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 8.3 Feature Description 8.3.1 Digital Functions The device has several useful digital functions (such as test patterns, gain, and offset correction). These functions require extra clock cycles for operation and increase the overall latency and power of the device. These digital functions are disabled by default after reset and the raw ADC output is routed to the output data pins with a latency of 16 clock cycles. Figure 37 shows more details of the processing after the ADC. In order to use any of the digital functions, the EN DIGITAL bit must be set to '1'. After this, the respective register bits must be programmed as described in the following sections and in the Serial Register Map section. Output Interface 12-Bit ADC 12-Bit Digital Functions (Gain, Offset Correction, Test Patterns) DDR LVDS or CMOS EN DIGITAL Bit Figure 37. Digital Processing Block 8.3.2 Gain for SFDR/SNR Trade-off The ADS4229 includes gain settings that can be used to get improved SFDR performance (compared to no gain). The gain is programmable from 0 dB to 6 dB (in 0.5-dB steps). For each gain setting, the analog input fullscale range scales proportionally, as shown in Table 2. The SFDR improvement is achieved at the expense of SNR; for each gain setting, the SNR degrades approximately between 0.5 dB and 1 dB. The SNR degradation is reduced at high input frequencies. As a result, the gain is very useful at high input frequencies because the SFDR improvement is significant with marginal degradation in SNR. Therefore, the gain can be used as a trade-off between SFDR and SNR. Note that the default gain after reset is 0 dB. Table 2. Full-Scale Range Across Gains GAIN (dB) TYPE FULL-SCALE (VPP) 0 Default after reset 2 1 Fine, programmable 1.78 2 Fine, programmable 1.59 3 Fine, programmable 1.42 4 Fine, programmable 1.26 5 Fine, programmable 1.12 6 Fine, programmable 1 8.3.3 Offset Correction The ADS4229 has an internal offset corretion algorithm that estimates and corrects dc offset up to ±10 mV. The correction can be enabled using the ENABLE OFFSET CORR serial register bit. Once enabled, the algorithm estimates the channel offset and applies the correction every clock cycle. The time constant of the correction loop is a function of the sampling clock frequency. The time constant can be controlled using the OFFSET CORR TIME CONSTANT register bits, as described in Table 3. After the offset is estimated, the correction can be frozen by setting FREEZE OFFSET CORR = 0. Once frozen, the last estimated value is used for the offset correction of every clock cycle. Note that offset correction is disabled by default after reset. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 27 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com Table 3. Time Constant of Offset Correction Algorithm (1) OFFSET CORR TIME CONSTANT TIME CONSTANT, TCCLK (Number of Clock Cycles) TIME CONSTANT, TCCLK × 1/fS (ms) (1) 0000 1M 4 0001 2M 8 0010 4M 16 0011 8M 32 0100 16 M 64 0101 32 M 128 0110 64 M 256 0111 128 M 512 1000 256 M 1024 1001 512 M 2048 1010 1G 4096 1011 2G 8192 1100 Reserved — 1101 Reserved — 1110 Reserved — 1111 Reserved — Sampling frequency, fS = 250 MSPS. 8.3.4 Power-Down The ADS4229 has two power-down modes: global power-down and channel standby. These modes can be set using either the serial register bits or using the control pins CTRL1 to CTRL3 (as shown in Table 4). Table 4. Power-Down Settings CTRL1 CTRL2 CTRL3 Low Low Low Default DESCRIPTION Low Low High Not available Low High Low Not available Low High High Not available High Low Low Global power-down High Low High Channel A powered down, channel B is active High High Low Not available High High High MUX mode of operation, channel A and B data is multiplexed and output on DB[10:0] pins 8.3.4.1 Global Power-Down In this mode, the entire chip (including ADCs, internal reference, and output buffers) are powered down, resulting in reduced total power dissipation of approximately 20 mW when the CTRL pins are used and 3mW when the PDN GLOBAL serial register bit is used. The output buffers are in high-impedance state. The wake-up time from global power-down to data becoming valid in normal mode is typically 100 µs. 8.3.4.2 Channel Standby In this mode, each ADC channel can be powered down. The internal references are active, resulting in a quick wake-up time of 50 µs. The total power dissipation in standby is approximately 250 mW at 250 MSPS. 8.3.4.3 Input Clock Stop In addition to the previous modes, the converter enters a low-power mode when the input clock frequency falls below 1 MSPS. The power dissipation is approximately 160 mW. 28 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 8.3.5 Output Data Format Two output data formats are supported: twos complement and offset binary. The format can be selected using the DATA FORMAT serial interface register bit or by controlling the DFS pin in parallel configuration mode. In the event of an input voltage overdrive, the digital outputs go to the appropriate full-scale level. For a positive overdrive, the output code is FFFh for the ADS4229 in offset binary output format; the output code is 7FFh for the ADS4229 in twos complement output format. For a negative input overdrive, the output code is 0000h in offset binary output format and 800h for the ADS4229 in twos complement output format. 8.4 Device Functional Modes 8.4.1 Output Interface Modes The ADS4229 provides 12-bit digital data for each channel and an output clock synchronized with the data. 8.4.1.1 Output Interface Two output interface options are available: double data rate (DDR) LVDS and parallel CMOS. They can be selected using the serial interface register bit or by setting the proper voltage on the SEN pin in parallel configuration mode. 8.4.1.2 DDR LVDS Outputs In this mode, the data bits and clock are output using low-voltage differential signal (LVDS) levels. Two data bits are multiplexed and output on each LVDS differential pair, as shown in Figure 38. Pins CLKOUTP CLKOUTM DB0_P LVDS Buffers DB0_M DB2_P DB2_M DB4_P 12-Bit ADC Data, Channel B DB4_M DB6_P DB6_M DB8_P DB8_M DB10_P DB10_M Output Clock Data Bits D0, D1 Data Bits D2, D3 Data Bits D4, D5 Data Bits D6, D7 Data Bits D8, D9 Data Bits D10, D11 Figure 38. LVDS Interface Even data bits (D0, D2, D4, and so forth) are output at the CLKOUTP rising edge and the odd data bits (D1, D3, D5, and so forth) are output at the CLKOUTP falling edge. Both the CLKOUTP rising and falling edges must be used to capture all the data bits, as shown in Figure 39. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 29 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com Device Functional Modes (continued) CLKOUTM CLKOUTP DA0, DB0 D0 D1 D0 D1 DA2, DB2 D2 D3 D2 D3 DA4, DB4 D4 D5 D4 D5 DA6, DB6 D6 D7 D6 D7 DA8, DB8 D8 D9 D8 D9 DA10, DB10 D10 D11 D10 D11 Sample N Sample N + 1 Figure 39. DDR LVDS Interface Timing 8.4.1.3 LVDS Buffer The equivalent circuit of each LVDS output buffer is shown in Figure 40. After reset, the buffer presents an output impedance of 100Ω to match with the external 100-Ω termination. VDIFF High Low OUTP External 100-W Load OUTM VOCM ROUT VDIFF Low High NOTE: Default swing across 100-Ω load is ±350 mV. Use the LVDS SWING bits to change the swing. Figure 40. LVDS Buffer Equivalent Circuit The VDIFF voltage is nominally 350 mV, resulting in an output swing of ±350 mV with 100-Ω external termination. The VDIFF voltage is programmable using the LVDS SWING register bits from ±125 mV to ±570 mV. Additionally, a mode exists to double the strength of the LVDS buffer to support 50-Ω differential termination, as shown in Figure 41. This mode can be used when the output LVDS signal is routed to two separate receiver chips, each using a 100-Ω termination. The mode can be enabled using the LVDS DATA STRENGTH and LVDS CLKOUT STRENGTH register bits for data and output clock buffers, respectively. The buffer output impedance behaves in the same way as a source-side series termination. By absorbing reflections from the receiver end, it helps to improve signal integrity. 30 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 Device Functional Modes (continued) Receiver Chip # 1 (for example, GC5330) DAnP/M CLKIN1 100 W CLKIN2 100 W CLKOUTP CLKOUTM DBnP/M Receiver Chip # 2 Device Make LVDS CLKOUT STRENGTH = 1 Figure 41. LVDS Buffer Differential Termination Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 31 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com Device Functional Modes (continued) 8.4.1.4 Parallel CMOS Interface In the CMOS mode, each data bit is output on separate pins as CMOS voltage level, every clock cycle, as Figure 42 shows. The rising edge of the output clock CLKOUT can be used to latch data in the receiver. It is recommended to minimize the load capacitance of the data and clock output pins by using short traces to the receiver. Furthermore, match the output data and clock traces to minimize the skew between them. DB0 ¼ ¼ DB1 12-Bit ADC Data, Channel B DB10 DB11 SDOUT CLKOUT DA0 ¼ ¼ DA1 12-Bit ADC Data, Channel A DA10 DA11 Figure 42. CMOS Outputs 8.4.1.5 CMOS Interface Power Dissipation With CMOS outputs, the DRVDD current scales with the sampling frequency and the load capacitance on every output pin. The maximum DRVDD current occurs when each output bit toggles between 0 and 1 every clock cycle. In actual applications, this condition is unlikely to occur. The actual DRVDD current would be determined by the average number of output bits switching, which is a function of the sampling frequency and the nature of the analog input signal. This relationship is shown by the formula: 32 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 Device Functional Modes (continued) Digital current as a result of CMOS output switching = CL × DRVDD × (N × FAVG) where • • CL = load capacitance, N × FAVG = average number of output bits switching. (1) 8.4.1.6 Multiplexed Mode of Operation In this mode, the digital outputs of both channels are multiplexed and output on a single bus (DB[11:0] pins), as shown in Figure 43. The channel A output pins (DA[11:0]) are in 3-state. Because the output data rate on the DB bus is effectively doubled, this mode is recommended only for low sampling frequencies (less than 80 MSPS). This mode can be enabled using the POWER-DOWN MODE register bits or using the CTRL[3:1] parallel pins. CLKM Input Clock CLKP tPDI Output Clock CLKOUT tSU Output Data DBn Channel A (1) DAn (2) tH Channel B DBn (2) (1) In multiplexed mode, both channels outputs come on the channel B output pins. (2) Dn = bits D0, D1, D2, and so forth. Channel A DAn (2) Figure 43. Multiplexed Mode Timing Diagram 8.5 Programming Table 5 shows all the high-performance modes for the ADS4229 device. Table 5. High-Performance Modes (1) (2) PARAMETER DESCRIPTION High-performance mode Set the HIGH PERF MODE[2:1] register bit to obtain best performance across sample clock and input signal frequencies. Register address = 03h, data = 03h High-frequency mode Set the HIGH FREQ MODE CH A and HIGH FREQ MODE CH B register bits for high input signal frequencies greater than 200 MHz. Register address = 4Ah, data = 01h Register address = 58h, data = 01h High-speed mode Set the HIGH PERF MODE[2:7] bits to obtain best performance across input signal frequencies for sampling rates greater than 160 MSPS. Note that this mode changes VCM to 0.87 V from its default value of 0.95 V. Register address = 2h, data = 40h Register address = D5h, data = 18h Register address = D7h, data = 0Ch Register address = DBh, data = 20h (1) (2) It is recommended to use these modes to obtain best performance. See the Serial Interface Configuration section for details on register programming. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 33 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com 8.5.1 Device Configuration The ADS4229 can be configured independently using either parallel interface control or serial interface programming. 8.5.2 Parallel Configuration Only To put the device into parallel configuration mode, keep RESET tied high (AVDD). Then, use the SEN, SCLK, CTRL1, CTRL2, and CTRL3 pins to directly control certain modes of the ADC. The device can be easily configured by connecting the parallel pins to the correct voltage levels (as described in Table 6 to Table 9). There is no need to apply a reset and SDATA can be connected to ground. In this mode, SEN and SCLK function as parallel interface control pins. Some frequently-used functions can be controlled using these pins. Table 6 describes the modes controlled by the parallel pins. Table 6. Parallel Pin Definition PIN CONTROL MODE SCLK Low-speed mode selection SEN Output data format and output interface selection CTRL1 CTRL2 Together, these pins control the power-down modes CTRL3 8.5.3 Serial Interface Configuration Only To enable this mode, the serial registers must first be reset to the default values and the RESET pin must be kept low. SEN, SDATA, and SCLK function as serial interface pins in this mode and can be used to access the internal registers of the ADC. The registers can be reset either by applying a pulse on the RESET pin or by setting the RESET bit high. The Serial Register Map section describes the register programming and the register reset process in more detail. 8.5.4 Using Both Serial Interface and Parallel Controls For increased flexibility, a combination of serial interface registers and parallel pin controls (CTRL1 to CTRL3) can also be used to configure the device. To enable this option, keep RESET low. The parallel interface control pins CTRL1 to CTRL3 are available. After power-up, the device is automatically configured according to the voltage settings on these pins (see Table 9). SEN, SDATA, and SCLK function as serial interface digital pins and are used to access the internal registers of the ADC. The registers must first be reset to the default values either by applying a pulse on the RESET pin or by setting the RESET bit to '1'. After reset, the RESET pin must be kept low. The Serial Register Map section describes register programming and the register reset process in more detail. 8.5.5 Parallel Configuration Details The functions controlled by each parallel pin are described in Table 7, Table 8, and Table 9. A simple way of configuring the parallel pins is shown in Figure 44. Table 7. SCLK Control Pin VOLTAGE APPLIED ON SCLK DESCRIPTION Low Low-speed mode is disabled High Low-speed mode is enabled Table 8. SEN Control Pin VOLTAGE APPLIED ON SEN 0 (+50mV/0mV) (3/8) AVDD (±50mV) 34 DESCRIPTION Twos complement and parallel CMOS output Offset binary and parallel CMOS output Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 Table 8. SEN Control Pin (continued) VOLTAGE APPLIED ON SEN DESCRIPTION (5/8) 2AVDD (±50mV) Offset binary and DDR LVDS output AVDD (0mV/–50mV) Twos complement and DDR LVDS output Table 9. CTRL1, CTRL2, and CTRL3 Pins CTRL1 CTRL2 CTRL3 Low Low Low Normal operation DESCRIPTION Low Low High Not available Low High Low Not available Low High High Not available High Low Low Global power-down High Low High Channel A standby, channel B is active High High Low Not available High High High MUX mode of operation, channel A and B data are multiplexed and output on the DB[11:0] pins. AVDD (5/8) AVDD 3R (5/8) AVDD GND AVDD 2R (3/8) AVDD 3R (3/8) AVDD To Parallel Pin Figure 44. Simple Scheme to Configure the Parallel Pins 8.5.6 Serial Interface Details The ADC has a set of internal registers that can be accessed by the serial interface formed by the SEN (serial interface enable), SCLK (serial interface clock), and SDATA (serial interface data) pins. Serial shift of bits into the device is enabled when SEN is low. Serial data SDATA are latched at every SCLK falling edge when SEN is active (low). The serial data are loaded into the register at every 16th SCLK falling edge when SEN is low. When the word length exceeds a multiple of 16 bits, the excess bits are ignored. Data can be loaded in multiples of 16bit words within a single active SEN pulse. The first eight bits form the register address and the remaining eight bits are the register data. The interface can work with SCLK frequencies from 20 MHz down to very low speeds (of a few hertz) and also with non-50% SCLK duty cycle. 8.5.6.1 Register Initialization After power-up, the internal registers must be initialized to the default values. Initialization can be accomplished in one of two ways: 1. Through a hardware reset by applying a high pulse on the RESET pin (of width greater than 10 ns), as shown in Figure 5 and Serial Interface Timing Characteristics; or 2. By applying a software reset. When using the serial interface, set the RESET bit high. This setting initializes the internal registers to the default values and then self-resets the RESET bit low. In this case, the RESET pin is kept low. See Reset Timing (Only when Serial Interface is Used) and Figure 6 for reset timing. 8.5.6.2 Serial Register Readout The device includes a mode where the contents of the internal registers can be read back. This readback mode may be useful as a diagnostic check to verify the serial interface communication between the external controller and the ADC. To use readback mode, follow this procedure: Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 35 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com 1. Set the READOUT register bit to '1'. This setting disables any further writes to the registers. 2. Initiate a serial interface cycle specifying the address of the register (A7 to A0) whose content has to be read. 3. The device outputs the contents (D7 to D0) of the selected register on the SDOUT pin (pin 64). 4. The external controller can latch the contents at the SCLK falling edge. 5. To enable register writes, reset the READOUT register bit to '0'. The serial register readout works with both CMOS and LVDS interfaces on pin 64. See Figure 45 for serial readout timing diagram. When READOUT is disabled, the SDOUT pin is in high-impedance state. Register Address A[7:0] = 00h SDATA 0 0 0 0 0 0 Register Data D[7:0] = 01h 0 0 0 0 0 0 0 0 0 1 SCLK SEN The SDOUT pin is in high-impedance state. SDOUT a) Enable serial readout (READOUT = 1) Register Address A[7:0] = 45h SDATA A7 A6 A5 A4 A3 A2 Register Data D[7:0] = XX (don’t care) A1 A0 D7 D6 D5 D4 D3 D2 D1 D0 0 0 0 0 0 1 0 0 SCLK SEN SDOUT The SDOUT pin functions as serial readout (READOUT = 1). b) Read contents of Register 45h. This register has been initialized with 04h (device is put into global power-down mode.) Figure 45. Serial Readout Timing Diagram 36 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 8.6 Register Maps 8.6.1 Serial Register Map Table 10 summarizes the functions supported by the serial interface. Table 10. Serial Interface Register Map (1) REGISTER ADDRESS REGISTER DATA A[7:0] (Hex) D7 D6 D5 D4 D3 D2 D1 D0 00 0 0 0 0 0 0 RESET READOUT 0 0 0 HIGH PERF MODE 2 HIGH PERF MODE 1 01 03 LVDS SWING 0 0 0 0 25 29 0 0 CH A GAIN 2B 0 0 DATA FORMAT CH B GAIN 3D 0 0 3F 0 0 40 (1) 0 CH A TEST PATTERNS 0 0 ENABLE OFFSET CORR 0 0 0 0 CH B TEST PATTERNS 0 0 0 CUSTOM PATTERN D[11:6] CUSTOM PATTERN D[5:0] 0 0 41 LVDS CMOS CMOS CLKOUT STRENGTH 0 0 DIS OBUF 42 CLKOUT FALL POSN CLKOUT RISE POSN EN DIGITAL 0 0 0 45 STBY LVDS CLKOUT STRENGTH 4A 0 0 0 0 0 0 0 HIGH FREQ MODE CH B 58 0 0 0 0 0 0 0 HIGH FREQ MODE CH A LVDS DATA STRENGTH 0 0 PDN GLOBAL 0 0 BF CH A OFFSET PEDESTAL 0 0 0 0 C1 CH B OFFSET PEDESTAL 0 0 0 0 0 0 0 CF FREEZE OFFSET CORR 0 EF 0 0 0 EN LOW SPEED MODE F1 0 0 0 OFFSET CORR TIME CONSTANT 0 0 0 0 0 0 EN LVDS SWING 0 0 0 F2 0 0 0 0 LOW SPEED MODE CH A 2 0 HIGH PERF MODE3 0 0 0 0 0 0 D5 0 0 0 HIGH PERF MODE4 HIGH PERF MODE5 0 0 0 D7 0 0 0 0 HIGH PERF MODE6 HIGH PERF MODE7 0 0 DB 0 0 HIGH PERF MODE8 0 0 0 0 LOW SPEED MODE CH B Multiple functions in a register can be programmed in a single write operation. All registers default to '0' after reset. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 37 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com 8.6.2 Description of Serial Registers 8.6.2.1 Register Address 00h (Default = 00h) Figure 46. Register Address 00h (Default = 00h) 7 6 5 4 3 2 1 0 0 0 0 0 0 0 RESET READOUT Bits[7:2] Always write '0' Bit 1 RESET: Software reset applied This bit resets all internal registers to the default values and self-clears to 0 (default = 1). Bit 0 READOUT: Serial readout This bit sets the serial readout of the registers. 0 = Serial readout of registers disabled; the SDOUT pin is placed in a high-impedance state. 1 = Serial readout enabled; the SDOUT pin functions as a serial data readout with CMOS logic levels running from the DRVDD supply. See the Serial Register Readout section. 8.6.2.2 Register Address 01h (Default = 00h) Figure 47. Register Address 01h (Default = 00h) 7 6 5 4 3 2 LVDS SWING Bits[7:2] 1 0 0 0 LVDS SWING: LVDS swing programmability These bits program the LVDS swing. Set the EN LVDS SWING bit to '1' before programming swing. 000000 = Default LVDS swing; ±350 mV with external 100-Ω termination 011011 = LVDS swing increases to ±410 mV 110010 = LVDS swing increases to ±465 mV 010100 = LVDS swing increases to ±570 mV 111110 = LVDS swing increases to ±200 mV 001111 = LVDS swing increases to ±125 mV Bits[1:0] Always write '0' 8.6.2.3 Register Address 03h (Default = 00h) Figure 48. Register Address 03h (Default = 00h) 7 6 5 4 3 2 1 0 0 0 0 0 0 0 HIGH PERF MODE 2 HIGH PERF MODE 1 Bits[7:2] Always write '0' Bits[1:0] HIGH PERF MODE[2:1]: High-performance mode 00 01 10 11 38 = = = = Default performance Do not use Do not use Obtain best performance across sample clock and input signal frequencies Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 8.6.2.4 Register Address 25h (Default = 00h) Figure 49. Register Address 25h (Default = 00h) 7 6 5 4 3 CH A GAIN Bits[7:4] 2 0 1 0 CH A TEST PATTERNS CH A GAIN: Channel A gain programmability These bits set the gain programmability in 0.5-dB steps for channel A. 0000 0001 0010 0011 0100 0101 0110 0111 1000 1001 1010 1011 1100 = = = = = = = = = = = = = 0-dB gain (default after reset) 0.5-dB gain 1-dB gain 1.5-dB gain 2-dB gain 2.5-dB gain 3-dB gain 3.5-dB gain 4-dB gain 4.5-dB gain 5-dB gain 5.5-dB gain 6-dB gain Bit 3 Always write '0' Bits[2:0] CH A TEST PATTERNS: Channel A data capture These bits verify data capture for channel A. 000 = Normal operation 001 = Outputs all 0s 010 = Outputs all 1s 011 = Outputs toggle pattern. For the ADS4229, the output data D[11:0] are an alternating sequence of 101010101010 and 010101010101. 100 = Outputs digital ramp. 101 = Outputs custom pattern; use registers 3Fh and 40h to set the custom pattern 110 = Unused 111 = Unused 8.6.2.5 Register Address 29h (Default = 00h) Figure 50. Register Address 29h (Default = 00h) 7 6 5 0 0 0 4 3 DATA FORMAT Bits[7:5] Always write '0' Bits[4:3] DATA FORMAT: Data format selection 00 01 10 11 Bits[2:0] = = = = 2 1 0 0 0 0 Twos complement Twos complement Twos complement Offset binary Always write '0' Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 39 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com 8.6.2.6 Register Address 2Bh (Default = 00h) Figure 51. Register Address 2Bh (Default = 00h) 7 6 5 4 3 CH B GAIN Bits[7:4] 2 0 1 0 CH B TEST PATTERNS CH B GAIN: Channel B gain programmability These bits set the gain programmability in 0.5-dB steps for channel B. 0000 0001 0010 0011 0100 0101 0110 0111 1000 1001 1010 1011 1100 = = = = = = = = = = = = = 0-dB gain (default after reset) 0.5-dB gain 1-dB gain 1.5-dB gain 2-dB gain 2.5-dB gain 3-dB gain 3.5-dB gain 4-dB gain 4.5-dB gain 5-dB gain 5.5-dB gain 6-dB gain Bit 3 Always write '0' Bits[2:0] CH B TEST PATTERNS: Channel B data capture These bits verify data capture for channel B. 000 = Normal operation 001 = Outputs all 0s 010 = Outputs all 1s 011 = Outputs toggle pattern. For the ADS4229, the output data D[11:0] are an alternating sequence of 101010101010 and 010101010101. 100 = Outputs digital ramp. 101 = Outputs custom pattern; use registers 3Fh and 40h to set the custom pattern 110 = Unused 111 = Unused 8.6.2.7 Register Address 3Dh (Default = 00h) Figure 52. Register Address 3Dh (Default = 00h) 7 6 5 4 3 2 1 0 0 0 ENABLE OFFSET CORR 0 0 0 0 0 Bits[7:6] Always write '0' Bit 5 ENABLE OFFSET CORR: Offset correction setting This bit enables the offset correction. 0 = Offset correction disabled 1 = Offset correction enabled Bits[4:0] 40 Always write '0' Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 8.6.2.8 Register Address 3Fh (Default = 00h) Figure 53. Register Address 3Fh (Default = 00h) 7 6 5 4 3 2 1 0 0 0 CUSTOM PATTERN D11 CUSTOM PATTERN D10 CUSTOM PATTERN D9 CUSTOM PATTERN D8 CUSTOM PATTERN D7 CUSTOM PATTERN D6 Bits[7:6] Always write '0' Bits[5:0] CUSTOM PATTERN D[11:6] These are the six upper bits of the custom pattern available at the output instead of ADC data. The ADS4229 custom pattern is 12-bit. 8.6.2.9 Register Address 40h (Default = 00h) Figure 54. Register Address 40h (Default = 00h) 7 6 5 4 3 2 1 0 CUSTOM PATTERN D5 CUSTOM PATTERN D4 CUSTOM PATTERN D3 CUSTOM PATTERN D2 CUSTOM PATTERN D1 CUSTOM PATTERN D0 0 0 Bits[7:2] CUSTOM PATTERN D[5:0] These are the six lower bits of the custom pattern available at the output instead of ADC data. The ADS4229 custom pattern is 12-bit; use the CUSTOM PATTERN D[11:0] register bits. Bits[1:0] Always write '0' 8.6.2.10 Register Address 41h (Default = 00h) Figure 55. Register Address 41h (Default = 00h) 7 6 LVDS CMOS Bits[7:6] 5 4 CMOS CLKOUT STRENGTH 3 2 0 0 1 0 DIS OBUF LVDS CMOS: Interface selection These bits select the interface. 00 = DDR LVDS interface 01 = DDR LVDS interface 10 = DDR LVDS interface 11 = Parallel CMOS interface Bits[5:4] CMOS CLKOUT STRENGTH These bits control the strength of the CMOS output clock. 00 = Maximum strength (recommended) 01 = Medium strength 10 = Low strength 11 = Very low strength Bits[3:2] Always write '0' Bits[1:0] DIS OBUF These bits power down data and clock output buffers for both the CMOS and LVDS output interface. When powered down, the output buffers are in 3-state. 00 = Default 01 = Power-down data output buffers for channel B 10 = Power-down data output buffers for channel A 11 = Power-down data output buffers for both channels as well as the clock output buffer Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 41 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com 8.6.2.11 Register Address 42h (Default = 00h) Figure 56. Register Address 42h (Default = 00h) 7 6 5 CLKOUT FALL POSN Bits[7:6] CLKOUT RISE POSN 2 1 0 EN DIGITAL 0 0 0 of the output clock advances by 450 ps of the output clock advances by 150 ps of the output clock is delayed by 550 ps of the output clock is delayed by 150 ps of the output clock advances by 100 ps CLKOUT RISE POSN In LVDS mode: 00 = Default 01 = The rising edge 10 = The rising edge 11 = The rising edge In CMOS mode: 00 = Default 01 = The rising edge 10 = Do not use 11 = The rising edge Bit 3 3 CLKOUT FALL POSN In LVDS mode: 00 = Default 01 = The falling edge 10 = The falling edge 11 = The falling edge In CMOS mode: 00 = Default 01 = The falling edge 10 = Do not use 11 = The falling edge Bits[5:6] 4 of the output clock advances by 450 ps of the output clock advances by 150 ps of the output clock is delayed by 250 ps of the output clock is delayed by 150 ps of the output clock advances by 100 ps EN DIGITAL: Digital function enable 0 = All digital functions disabled 1 = All digital functions (such as test patterns, gain, and offset correction) enabled Bits[2:0] Always write '0' 8.6.2.12 Register Address 45h (Default = 00h) Figure 57. Register Address 45h (Default = 00h) 7 6 5 4 3 2 1 0 STBY LVDS CLKOUT STRENGTH LVDS DATA STRENGTH 0 0 PDN GLOBAL 0 0 Bit 7 STBY: Standby setting 0 = Normal operation 1 = Both channels are put in standby; wakeup time from this mode is fast (typically 50 µs). Bit 6 LVDS CLKOUT STRENGTH: LVDS output clock buffer strength setting 0 = LVDS output clock buffer at default strength to be used with 100-Ω external termination 1 = LVDS output clock buffer has double strength to be used with 50-Ω external termination Bit 5 LVDS DATA STRENGTH 0 = All LVDS data buffers at default strength to be used with 100-Ω external termination 1 = All LVDS data buffers have double strength to be used with 50-Ω external termination Bits[4:3] Always write '0' Bit 2 PDN GLOBAL 42 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 0 = Normal operation 1 = Total power down; all ADC channels, internal references, and output buffers are powered down. Wakeup time from this mode is slow (typically 100 µs). Bits[1:0] Always write '0' 8.6.2.13 Register Address 4Ah (Default = 00h) Figure 58. Register Address 4Ah (Default = 00h) 7 6 5 4 3 2 1 0 0 0 0 0 0 0 0 HIGH FREQ MODE CH B Bits[7:1] Always write '0' Bit 0 HIGH FREQ MODE CH B: High-frequency mode for channel B 0 = Default 1 = Use this mode for high input frequencies greater than 200 MHz 8.6.2.14 Register Address 58h (Default = 00h) Figure 59. Register Address 58h (Default = 00h) 7 6 5 4 3 2 1 0 0 0 0 0 0 0 0 HIGH FREQ MODE CH A Bits[7:1] Always write '0' Bit 0 HIGH FREQ MODE CH A: High-frequency mode for channel A 0 = Default 1 = Use this mode for high input frequencies greater than 200 MHz 8.6.2.15 Register Address BFh (Default = 00h) Figure 60. Register Address BFh (Default = 00h) 7 6 5 4 CH A OFFSET PEDESTAL Bits[7:4] 3 2 1 0 0 0 0 0 CH A OFFSET PEDESTAL: Channel A offset pedestal selection When the offset correction is enabled, the final converged value after the offset is corrected is the ADC midcode value. A pedestal can be added to the final converged value by programming these bits. See the Offset Correction section. Channels can be independently programmed for different offset pedestals by choosing the relevant register address. For the ADS4229, the pedestal ranges from –8 to +7, so the output code can vary from midcode-8 to midcode+7 by adding pedestal D7-D4. Program bits D[7:4] 0111 = Midcode+7 0110 = Midcode+6 0101 = Midcode+5 … 0000 = Midcode 1111 = Midcode-1 1110 = Midcode-2 1101 = Midcode-3 … 1000 = Midcode-8 Bits[3:0] Always write '0' Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 43 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com 8.6.2.16 Register Address C1h (Default = 00h) Figure 61. Register Address C1h (Default = 00h) 7 6 5 4 CH B OFFSET PEDESTAL Bits[7:4] 3 2 1 0 0 0 0 0 CH B OFFSET PEDESTAL: Channel B offset pedestal selection When offset correction is enabled, the final converged value after the offset is corrected is the ADC midcode value. A pedestal can be added to the final converged value by programming these bits; see the Offset Correction section. Channels can be independently programmed for different offset pedestals by choosing the relevant register address. For the ADS4229, the pedestal ranges from –8 to +7, so the output code can vary from midcode-8 to midcode+7 by adding pedestal D[7:4]. Program Bits D[7:4] 0111 = Midcode+7 0110 = Midcode+6 0101 = Midcode+5 … 0000 = Midcode 1111 = Midcode-1 1110 = Midcode-2 1101 = Midcode-3 … 1000 = Midcode-8 Bits[3:0] Always write '0' 8.6.2.17 Register Address CFh (Default = 00h) Figure 62. Register Address CFh (Default = 00h) 7 6 FREEZE OFFSET CORR 0 Bit 7 5 4 3 2 OFFSET CORR TIME CONSTANT 1 0 0 0 FREEZE OFFSET CORR: Freeze offset correction setting This bit sets the freeze offset correction estimation. 0 = Estimation of offset correction is not frozen (the EN OFFSET CORR bit must be set) 1 = Estimation of offset correction is frozen (the EN OFFSET CORR bit must be set); when frozen, the last estimated value is used for offset correction of every clock cycle. See the Offset Correction section. Bit 6 Always write '0' Bits[5:2] OFFSET CORR TIME CONSTANT The offset correction loop time constant in number of clock cycles. Refer to the Offset Correction section. Bits[1:0] 44 Always write '0' Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 8.6.2.18 Register Address EFh (Default = 00h) Figure 63. Register Address EFh (Default = 00h) 7 6 5 4 3 2 1 0 0 0 0 EN LOW SPEED MODE 0 0 0 0 Bits[7:5] Always write '0' Bit 4 EN LOW SPEED MODE: Enable control of low-speed mode through serial register bits This bit enables the control of the low-speed mode using the LOW SPEED MODE CH B and LOW SPEED MODE CH A register bits. 0 = Low-speed mode is disabled 1 = Low-speed mode is controlled by serial register bits Bits[3:0] Always write '0' 8.6.2.19 Register Address F1h (Default = 00h) Figure 64. Register Address F1h (Default = 00h) 7 6 5 4 3 2 1 0 0 0 0 0 0 EN LVDS SWING Bits[7:2] Always write '0' Bits[1:0] EN LVDS SWING: LVDS swing enable 0 These bits enable LVDS swing control using the LVDS SWING register bits. 00 = LVDS swing control using the LVDS SWING register bits is disabled 01 = Do not use 10 = Do not use 11 = LVDS swing control using the LVDS SWING register bits is enabled 8.6.2.20 Register Address F2h (Default = 00h) Figure 65. Register Address F2h (Default = 00h) 7 6 5 4 3 2 1 0 0 0 0 0 LOW SPEED MODE CH A 0 0 0 Bits[7:4] Always write '0' Bit 3 LOW SPEED MODE CH A: Channel A low-speed mode enable This bit enables the low-speed mode for channel A. Set the EN LOW SPEED MODE bit to '1' before using this bit. 0 = Low-speed mode is disabled for channel A 1 = Low-speed mode is enabled for channel A Bits[2:0] Always write '0' 8.6.2.21 Register Address 2h (Default = 00h) Figure 66. Register Address 2h (Default = 00h) 7 6 5 4 3 2 1 0 0 HIGH PERF MODE3 0 0 0 0 0 0 Bit 7 Always write '0' Bit 6 HIGH PERF MODE3 HIGH PERF MODE3 to HIGH PERF MODE8 must be set to '1' to ensure best performance at high sampling speed (greater than 160 MSPS) Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 45 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 Bits[5:0] www.ti.com Always write '0' 8.6.2.22 Register Address D5h (Default = 00h) Figure 67. Register Address D5h (Default = 00h) 7 6 0 0 Bits[7:5] Always write '0' Bit 4 HIGH PERF MODE4 5 4 3 2 1 0 0 HIGH PERF MODE4 HIGH PERF MODE5 0 0 0 HIGH PERF MODE3 to HIGH PERF MODE8 must be set to '1' to ensure best performance at high sampling speed (greater than 160 MSPS) Bit 3 HIGH PERF MODE5 HIGH PERF MODE3 to HIGH PERF MODE8 must be set to '1' to ensure best performance at high sampling speed (greater than 160 MSPS) Bits[2:0] Always write '0' 8.6.2.23 Register Address D7h (Default = 00h) Figure 68. Register Address D7h (Default = 00h) 7 6 0 5 0 0 Bits[7:4] Always write '0' Bit 3 HIGH PERF MODE6 4 3 2 1 0 0 HIGH PERF MODE6 HIGH PERF MODE7 0 0 HIGH PERF MODE3 to HIGH PERF MODE8 must be set to '1' to ensure best performance at high sampling speed (greater than 160 MSPS) Bit 2 HIGH PERF MODE7 HIGH PERF MODE3 to HIGH PERF MODE8 must be set to '1' to ensure best performance at high sampling speed (greater than 160 MSPS) Bits[1:0] Always write '0' 8.6.2.24 Register Address DBh (Default = 00h) Figure 69. Register Address DBh (Default = 00h) 7 0 6 5 4 3 2 1 0 0 HIGH PERF MODE80 0 0 0 0 LOW SPEED MODE CH B Bits[7:6] Always write '0' Bit 5 HIGH PERF MODE8 HIGH PERF MODE3 to HIGH PERF MODE8 must be set to '1' to ensure best performance at high sampling speed (greater than 160 MSPS) Bits[4:1] Always write '0' Bit 0 LOW SPEED MODE CH B: Channel B low-speed mode enable This bit enables the low-speed mode for channel B. Set the EN LOW SPEED MODE bit to '1' before using this bit. 0 = Low-speed mode is disabled for channel B 1 = Low-speed mode is enabled for channel B 46 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The ADS4229 dual-channel 12-bit ADC is designed for use in communications receivers designed to receive modern communication signals such as LTE, WIMAX, W-CDMA, and high-order QAM signals. A typical diversity receiver example is shown in Figure 70, where the antennas are placed at some distance to optimize performance in the presence of multipath fading. The path includes a low noise amplifier (LNA), RF mixer, and a digital variable gain amplifier (DVGA). Filtering is used throughout the path to remove blocking signals and mixing products and to prevent aliasing during sampling. LNA RF Mixer DVGA ADS4229 Ch A LO Source Clock ADS4229 Ch B Figure 70. Diversity Communications Receiver 9.1.1 Theory of Operation At every rising edge of the input clock, the analog input signal of each channel is simultaneously sampled. The sampled signal in each channel is converted by a pipeline of low-resolution stages. In each stage, the sampled/held signal is converted by a high-speed, low-resolution, flash sub-ADC. The difference between the stage input and the quantized equivalent is gained and propagates to the next stage. At every clock, each succeeding stage resolves the sampled input with greater accuracy. The digital outputs from all stages are combined in a digital correction logic block and digitally processed to create the final code after a data latency of 16 clock cycles. The digital output is available as either DDR LVDS or parallel CMOS and coded in either straight offset binary or binary twos complement format. The dynamic offset of the first stage sub-ADC limits the maximum analog input frequency to approximately 400 MHz (with 2-VPP amplitude) or approximately 600 MHz (with 1-VPP amplitude). Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 47 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com Application Information (continued) 9.1.2 Analog Input The analog input consists of a switched-capacitor-based, differential sample-and-hold (S/H) architecture. This differential topology results in very good ac performance even for high input frequencies at high sampling rates. The INP and INM pins must be externally biased around a common-mode voltage of 0.95 V, available on the VCM pin. For a full-scale differential input, each input pin (INP and INM) must swing symmetrically between VCM + 0.5 V and VCM – 0.5 V, resulting in a 2-VPP differential input swing. The input sampling circuit has a high 3-dB bandwidth that extends up to 550 MHz (measured from the input pins to the sampled voltage). Figure 71 shows an equivalent circuit for the analog input. Sampling Switch LPKG 2 nH INP 10 W CBOND 1 pF 100 W RESR 200 W CPAR2 RON 1 pF 15 W CSAMP 2 pF 3 pF 3 pF LPKG 2 nH INM Sampling Capacitor RCR Filter 10 W CBOND 1 pF CPAR1 0.5 pF RON 10 W 100 W RON 15 W CPAR2 1 pF RESR 200 W CSAMP 2 pF Sampling Capacitor Sampling Switch Figure 71. Analog Input Equivalent Circuit 9.1.2.1 Drive Circuit Requirements For optimum performance, the analog inputs must be driven differentially. This operation improves the commonmode noise immunity and even-order harmonic rejection. A 5-Ω to 15-Ω resistor in series with each input pin is recommended to damp out ringing caused by package parasitics. SFDR performance can be limited as a result of several reasons, including the effects of sampling glitches; nonlinearity of the sampling circuit; and nonlinearity of the quantizer that follows the sampling circuit. Depending on the input frequency, sample rate, and input amplitude, one of these factors generally plays a dominant part in limiting performance. At very high input frequencies (greater than approximately 300 MHz), SFDR is determined largely by the device sampling circuit nonlinearity. At low input amplitudes, the quantizer nonlinearity usually limits performance. Glitches are caused by the opening and closing of the sampling switches. The driving circuit should present a low source impedance to absorb these glitches. Otherwise, glitches could limit performance, primarily at low input frequencies (up to approximately 200 MHz). It is also necessary to present low impedance (less than 50 Ω) for the common-mode switching currents. This configuration can be achieved by using two resistors from each input terminated to the common-mode voltage (VCM pin). The device includes an internal R-C filter from each input to ground. The purpose of this filter is to absorb the sampling glitches inside the device itself. The cutoff frequency of the R-C filter involves a trade-off. A lower cutoff frequency (larger C) absorbs glitches better, but it reduces the input bandwidth. On the other hand, with a higher cutoff frequency (smaller C), bandwidth support is maximized. However, the sampling glitches must then be supplied by the external drive circuit. This tradeoff has limitations as a result of the presence of the package bond-wire inductance. 48 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 Application Information (continued) In the ADS4229, the R-C component values have been optimized while supporting high input bandwidth (up to 550 MHz). However, in applications with input frequencies up to 200 MHz to 300 MHz, the filtering of the glitches can be improved further using an external R-C-R filter; see Figure 74 and Figure 75. In addition, the drive circuit may have to be designed to provide a low insertion loss over the desired frequency range and matched impedance to the source. Furthermore, the ADC input impedance must be considered. Figure 72 and Figure 73 show the impedance (ZIN = RIN || CIN) looking into the ADC input pins. 5 Differential Input Capacitance (pF) Differential Input Resistance (kW) 100 10 1 0.1 4.5 4 3.5 3 2.5 2 1.5 0.01 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Input Frequency (GHz) Input Frequency (GHz) Figure 72. ADC Analog Input Resistance (RIN) Across Frequency Figure 73. ADC Analog Input Capacitance (CIN) Across Frequency 9.1.2.2 Driving Circuit Figure 74, Figure 75, and Figure 76 show examples of driving circuit configurations optimized for low bandwidth (to support low input frequencies), high bandwidth (to support higher input frequencies), and very high bandwidth, respectively. Note that each of the drive circuits has been terminated by 50 Ω near the ADC side. The transformers (such as ADTL1-1WT or WBC1-1) can be used up to 270 MHz IF. For very high IF (> 270 MHz), transformer ADTL2-18 can be used. The termination is accomplished by a 25-Ω resistor from each input to the 0.95-V common-mode (VCM) from the device. This architecture allows the analog inputs to be biased around the required common-mode voltage. The mismatch in the transformer parasitic capacitance (between the windings) results in degraded even-order harmonic performance. Connecting two identical RF transformers back-to-back helps minimize this mismatch; good performance is obtained for high-frequency input signals. An optional termination resistor pair may be required between the two transformers, as shown in Figure 74, Figure 75, and Figure 76. The center point of this termination is connected to ground to improve the balance between the P and M sides. The values of the terminations between the transformers and on the secondary side must be chosen to obtain an effective 50 Ω (in the case of 50-Ω source impedance). 0.1 mF T1 5W INx_P T2 0.1 mF 0.1 mF 25 W 25 W 3.3 pF 25 W RIN CIN 25 W INx_M 1:1 1:1 0.1 mF 5W VCM Device Figure 74. Drive Circuit With Low Bandwidth (for Low Input Frequencies Less Than 150 MHz) Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 49 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com Application Information (continued) 0.1 mF T1 5W INx_P T2 0.1 mF 0.1 mF 25 W 50 W 3.3 pF 25 W RIN CIN 50 W INx_M 1:1 1:1 5W 0.1 mF VCM Device Figure 75. Drive Circuit With High Bandwidth (for High Input Frequencies Greater Than 150 MHz and Less Than 270 MHz) 0.1 mF T1 5W INx_P T2 0.1 mF 0.1 mF 25 W RIN CIN 25 W INx_M 1:1 1:1 5W 0.1 mF VCM Device Figure 76. Drive Circuit With Very High Bandwidth (Greater Than 270 MHz) All of these examples show 1:1 transformers being used with a 50-Ω source. As explained in the Drive Circuit Requirements section, this configuration helps to present a low source impedance to absorb the sampling glitches. With a 1:4 transformer, the source impedance is 200 Ω. The higher source impedance is unable to absorb the sampling glitches effectively and can lead to degradation in performance (compared to using 1:1 transformers). In almost all cases, either a band-pass or low-pass filter is required to obtain the desired dynamic performance, as shown in Figure 77. Such filters present low source impedance at the high frequencies corresponding to the sampling glitch and help avoid performance losses associated with the high source impedance. 5W T1 0.1 mF Differential Input Signal Band-Pass or Low-Pass Filter 0.1 mF INx_P 100 W RIN CIN 100 W INx_M 1:4 5W VCM Device Figure 77. Drive Circuit With a 1:4 Transformer 50 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 Application Information (continued) 9.1.3 Clock Input The ADS4229 clock inputs can be driven differentially (sine, LVPECL, or LVDS) or single-ended (LVCMOS), with little or no difference in performance between them. The common-mode voltage of the clock inputs is set to VCM using internal 5-kΩ resistors. This setting allows the use of transformer-coupled drive circuits for sine-wave clock or ac-coupling for LVPECL and LVDS clock sources are shown in Figure 78, Figure 79, and Figure 80. The internal clock buffer is shown in Figure 81. 0.1 mF CLKP Differential Sine-Wave Clock Input RT 0.1 mF CLKM Device (1) RT = termination resister, if necessary. Figure 78. Differential Sine-Wave Clock Driving Circuit 0.1 mF Zo CLKP Typical LVDS Clock Input 100 W 0.1 mF Zo CLKM Device Figure 79. LVDS Clock Driving Circuit Zo 0.1 mF CLKP 150 W Typical LVPECL Clock Input 100 W Zo 0.1 mF CLKM Device 150 W Figure 80. LVPECL Clock Driving Circuit Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 51 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com Application Information (continued) Clock Buffer LPKG 2 nH 20 W CLKP CBOND 1 pF RESR 100 W LPKG 2 nH 5 kW CEQ 2 pF 20 W CEQ VCM 5 kW CLKM CBOND 1 pF RESR 100 W NOTE: CEQ is 1 pF to 3 pF and is the equivalent input capacitance of the clock buffer. Figure 81. Internal Clock Buffer A single-ended CMOS clock can be ac-coupled to the CLKP input, with CLKM connected to ground with a 0.1-μF capacitor, as shown in Figure 82. For best performance, the clock inputs must be driven differentially, thereby reducing susceptibility to common-mode noise. For high input frequency sampling, it is recommended to use a clock source with very low jitter. Band-pass filtering of the clock source can help reduce the effects of jitter. There is no change in performance with a non-50% duty cycle clock input. 0.1 mF CMOS Clock Input CLKP VCM 0.1 mF CLKM Device Figure 82. Single-Ended Clock Driving Circuit 52 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 9.2 Typical Application An example schematic for a typical application of the ADS4229 is shown in Figure 83. 22 O 22 O 22 O AVDD SPI Controller 22 O 0.1 …F 0.1 …F 22 O DRVDD To FPGA ADC Driver 50 O 5O 0.1 …F 0.1 …F 50 O 5O 50 O 50 O 0.1 …F AVDD 0.1 …F LVPECL Clock Driver FPGA 0.1 …F 240 O 240 O 100 O 0.1 …F 50 O 50 O 5O 50 O 0.1 …F ADC Driver 50 O 0.1 …F 5O To FPGA 0.1 …F 0.1 …F AVDD DRVDD Figure 83. Example Schematic for ADS4229 9.2.1 Design Requirements Example design requirements are listed in Table 11 for the ADC portion of the signal chain. These do not necessary reflect the requirements of an actual system, but rather demonstrate why the ADS4229 may be chosen for a system based on a set of requirements. Table 11. Example Design Requirements for ADS4229 DESIGN PARAMETER Sampling rate Input frequency SNR SFDR Input full scale voltage Channel-to-channel isolation Overload recovery time Digital interface Power consumption EXAMPLE DESIGN REQUIREMENT ADS4229 CAPABILITY ≥ 245.76 Msps to allow 80 MHz of unaliased bandwidth Max sampling rate: 250 Msps > 250 MHz to accommodate full 2nd nyquist zone operation Large signal –3 dB bandwidth: 400 MHz > 65 dBFS at –1 dFBS, 170 MHz 69.8 dBFS at –1 dBFS, 170 MHz > 75 dBc at –1 dFBS, 170 MHz 80 dBc at –1 dBFS, 170 MHz 2 Vpp 2 Vpp < 80 dB 95 dB < 3 clock cycles 1 clock cycle Parallel LVDS Parallel LVDS < 300 mW per channel 273 mW per channel Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 53 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com 9.2.2 Detailed Design Procedure 9.2.2.1 Analog Input The analog inputs of the ADS4229 are typically driven by a fully differential amplifier. The amplifier must have sufficient bandwidth for the frequencies of interest. The noise and distortion performance of the amplifier will affect the combined performance of the ADC and amplifier. The amplifier is often AC coupled to the ADC to allow both the amplifier and ADC to operate at the optimal common mode voltages. It is possible to DC couple the amplifier to the ADC if required. An alternate approach is to drive the ADC using transformers. DC coupling cannot be used with the transformer approach. 9.2.2.2 Common Mode Voltage Output (VCM) The common mode voltage output is shared between both ADC channels. To maintain optimal isolation, an LC filter may need to be placed on the VCM node between the channels (not shown in schematic). At a minimum, a bypass capacitor should be placed on the node that has sufficiently low impedance at the desired operating frequencies. Note the VCM pin maximum output current in the electrical tables when using VCM in alternate ways. 9.2.2.3 Clock Driver The ADS4229 supports both LVDS and CMOS interfaces. The LVDS interface should be used for best performance when operating at maximum sampling rate. The LVDS outputs can be connected directly to the FPGA without any additional components. When using CMOS outputs resistors should be placed in series with the outputs to reduce the output current spikes to limit the performance degradation. The resistors should be large enough to limit current spikes but not so large as to significantly distort the digital output waveform. An external CMOS buffer should be used when driving distances greater than a few inches to reduce ground bounce within the ADC. 9.2.2.4 Digital Interface The ADS4229 supports both LVDS and CMOS interfaces. The LVDS interface should be used for best performance when operating at maximum sampling rate. The LVDS outputs can be connected directly to the FPGA without any additional components. When using CMOS outputs resistors should be placed in series with the outputs to reduce the output current spikes to limit the performance degradation. The resistors should be large enough to limit current spikes but not so large as to significantly distort the digital output waveform. An external CMOS buffer should be used when driving distances greater than a few inches to reduce ground bounce within the ADC. 9.2.3 Application Curve Power (dBFS) Figure 83 shows the results of a 10-MHz LTE signal centered at 184.32 MHz captured by the ADS4229. 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 0 Ref. Power = –11.98 dFBS 24.576 49.152 73.728 Frequency (MHz) 98.304 122.88 D001 Lower Adj. = 69.92 dBc Lower Alt. = 70.28 dBc Upper Adj. = 69.92 dBc Upper Alt. = 70.17 dBc Figure 84. 10-MHz LTE Signal Captured by ADS4229 54 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 10 Power Supply Recommendations The ADS4229 has two power supplies, one analog (AVDD) and one digital (DRVDD) supply. Both supplies have a nominal voltage of 1.8 V. The AVDD supply is noise sensitive and the digital supply is not. 10.1 Sharing DRVDD and AVDD Supplies For best performance the AVDD supply should be driven by a low noise linear regulator (LDO) and separated from the DRVDD supply. It is possible to have AVDD and DRVDD share a single supply but they should be isolated by a ferrite bead and bypass capacitors, in a PI-filter configuration, at a minimum. The digital noise will be concentrated at the sampling frequency and harmonics of the sampling frequency and could contain noise related to the sampled signal. While developing schematics, it is a good idea to leave extra placeholders for additional supply filtering. 10.2 Using DC/DC Power Supplies For best performance the AVDD supply should be driven by a low noise linear regulator (LDO) and separated from the DRVDD supply. It is possible to have AVDD and DRVDD share a single supply but they should be isolated by a ferrite bead and bypass capacitors, in a PI-filter configuration, at a minimum. The digital noise will be concentrated at the sampling frequency and harmonics of the sampling frequency and could contain noise related to the sampled signal. While developing schematics, it is a good idea to leave extra placeholders for additional supply filtering. 10.3 Power Supply Bypassing Because the ADS4229 already includes internal decoupling, minimal external decoupling can be used without loss in performance. Note that decoupling capacitors can help filter external power-supply noise; thus, the optimum number of capacitors depends on the actual application. A 0.1-uF capacitor is recommended near each supply pin. The decoupling capacitors should be placed very close to the converter supply pins. 11 Layout 11.1 Layout Guidelines 11.1.1 Grounding A single ground plane is sufficient to give good performance, provided the analog, digital, and clock sections of the board are cleanly partitioned. See the ADS4226 Evaluation Module (SLAU333) for details on layout and grounding. 11.1.2 Exposed Pad In addition to providing a path for heat dissipation, the PowerPAD is also electrically connected internally to the digital ground. Therefore, it is necessary to solder the exposed pad to the ground plane for best thermal and electrical performance. For detailed information, see application notes QFN Layout Guidelines (SLOA122) and QFN/SON PCB Attachment (SLUA271). 11.1.3 Routing Analog Inputs It is advisable to route differential analog input pairs (INP_x and INM_x) close to each other. To minimize the possibility of coupling from a channel analog input to the sampling clock, the analog input pairs of both channels should be routed perpendicular to the sampling clock; see the ADS4226 Evaluation Module (SLAU333) for reference routing. Figure 85 shows a snapshot of the PCB layout from the ADS42xxEVM. 11.1.4 Routing Digital Outputs The digital outputs should be routed away from the analog inputs and any noise sensitive circuits. Avoid routing the digital outputs in parallel to any analog trace. The digital outputs should be routed over a solid ground plane all the way to the FPGA. Keep the digital traces as short as possible to reduce EMI emissions. The traces should be matched length to maintain timing, however mismatches in the trace lengths can be taken into account by including the delay differences in the FPGA timing constraints. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 55 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com 11.2 Layout Example INP_A INM_A CLKP CLKM INP_B INM_B ADS42xx Channel B Channel A Clock Figure 85. ADS42xxEVM PCB Layout 56 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 12 Device and Documentation Support 12.1 Device Support 12.1.1 Development Support 12.1.1.1 Definition of Specifications Analog Bandwidth – The analog input frequency at which the power of the fundamental is reduced by 3 dB with respect to the low-frequency value. Aperture Delay – The delay in time between the rising edge of the input sampling clock and the actual time at which the sampling occurs. This delay is different across channels. The maximum variation is specified as aperture delay variation (channel-to-channel). Aperture Uncertainty (Jitter) – The sample-to-sample variation in aperture delay. Clock Pulse Width/Duty Cycle – The duty cycle of a clock signal is the ratio of the time the clock signal remains at a logic high (clock pulse width) to the period of the clock signal. Duty cycle is typically expressed as a percentage. A perfect differential sine-wave clock results in a 50% duty cycle. Maximum Conversion Rate – The maximum sampling rate at which specified operation is given. All parametric testing is performed at this sampling rate unless otherwise noted. Minimum Conversion Rate – The minimum sampling rate at which the ADC functions. Differential Nonlinearity (DNL) – An ideal ADC exhibits code transitions at analog input values spaced exactly 1LSB apart. The DNL is the deviation of any single step from this ideal value, measured in units of LSBs. Integral Nonlinearity (INL) – The INL is the deviation of the ADC transfer function from a best fit line determined by a least squares curve fit of that transfer function, measured in units of LSBs. Gain Error – Gain error is the deviation of the ADC actual input full-scale range from its ideal value. The gain error is given as a percentage of the ideal input full-scale range. Gain error has two components: error as a result of reference inaccuracy (EGREF) and error as a result of the channel (EGCHAN). Both errors are specified independently as EGREF and EGCHAN. To a first-order approximation, the total gain error is ETOTAL ~ EGREF + EGCHAN. For example, if ETOTAL = ±0.5%, the full-scale input varies from (1 – 0.5/100) x FSideal to (1 + 0.5/100) x FSideal. Offset Error – The offset error is the difference, given in number of LSBs, between the ADC actual average idle channel output code and the ideal average idle channel output code. This quantity is often mapped into millivolts. Temperature Drift – The temperature drift coefficient (with respect to gain error and offset error) specifies the change per degree Celsius of the parameter from TMIN to TMAX. It is calculated by dividing the maximum deviation of the parameter across the TMIN to TMAX range by the difference TMAX – TMIN. Signal-to-Noise Ratio – SNR is the ratio of the power of the fundamental (PS) to the noise floor power (PN), excluding the power at dc and the first nine harmonics. SNR = 10Log10 PS PN (2) SNR is either given in units of dBc (dB to carrier) when the absolute power of the fundamental is used as the reference, or dBFS (dB to full-scale) when the power of the fundamental is extrapolated to the converter fullscale range. Signal-to-Noise and Distortion (SINAD) – SINAD is the ratio of the power of the fundamental (PS) to the power of all the other spectral components including noise (PN) and distortion (PD), but excluding dc. SINAD = 10Log10 PS PN + PD (3) Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 57 ADS4229 SBAS550C – JUNE 2011 – REVISED MAY 2015 www.ti.com Device Support (continued) SINAD is either given in units of dBc (dB to carrier) when the absolute power of the fundamental is used as the reference, or dBFS (dB to full-scale) when the power of the fundamental is extrapolated to the converter fullscale range. Effective Number of Bits (ENOB) – ENOB is a measure of the converter performance as compared to the theoretical limit based on quantization noise. ENOB = SINAD - 1.76 6.02 (4) Total Harmonic Distortion (THD) – THD is the ratio of the power of the fundamental (PS) to the power of the first nine harmonics (PD). THD = 10Log10 PS PN (5) THD is typically given in units of dBc (dB to carrier). Spurious-Free Dynamic Range (SFDR) – The ratio of the power of the fundamental to the highest other spectral component (either spur or harmonic). SFDR is typically given in units of dBc (dB to carrier). Two-Tone Intermodulation Distortion – IMD3 is the ratio of the power of the fundamental (at frequencies f1 and f2) to the power of the worst spectral component at either frequency 2f1 – f2 or 2f2 – f1. IMD3 is either given in units of dBc (dB to carrier) when the absolute power of the fundamental is used as the reference, or dBFS (dB to full-scale) when the power of the fundamental is extrapolated to the converter full-scale range. DC Power-Supply Rejection Ratio (DC PSRR) – DC PSSR is the ratio of the change in offset error to a change in analog supply voltage. The dc PSRR is typically given in units of mV/V. AC Power-Supply Rejection Ratio (AC PSRR) – AC PSRR is the measure of rejection of variations in the supply voltage by the ADC. If ΔVSUP is the change in supply voltage and ΔVOUT is the resultant change of the ADC output code (referred to the input), then: DVOUT PSRR = 20Log 10 (Expressed in dBc) DVSUP (6) Voltage Overload Recovery – The number of clock cycles taken to recover to less than 1% error after an overload on the analog inputs. This is tested by separately applying a sine wave signal with 6 dB positive and negative overload. The deviation of the first few samples after the overload (from the expected values) is noted. Common-Mode Rejection Ratio (CMRR) – CMRR is the measure of rejection of variation in the analog input common-mode by the ADC. If ΔVCM_IN is the change in the common-mode voltage of the input pins and ΔVOUT is the resulting change of the ADC output code (referred to the input), then: DVOUT CMRR = 20Log10 (Expressed in dBc) DVCM (7) Crosstalk (only for multi-channel ADCs) – This is a measure of the internal coupling of a signal from an adjacent channel into the channel of interest. It is specified separately for coupling from the immediate neighboring channel (near-channel) and for coupling from channel across the package (far-channel). It is usually measured by applying a full-scale signal in the adjacent channel. Crosstalk is the ratio of the power of the coupling signal (as measured at the output of the channel of interest) to the power of the signal applied at the adjacent channel input. It is typically expressed in dBc. 12.2 Documentation Support 12.2.1 Related Documentation For related documentation see the following: • QFN Layout Guidelines (SLOA122) • QFN/SON PCB Attachment (SLUA271) • ADS4226 Evaluation Module (SLAU333) 58 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 ADS4229 www.ti.com SBAS550C – JUNE 2011 – REVISED MAY 2015 12.3 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 12.4 Trademarks PowerPAD, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 12.5 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.6 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: ADS4229 59 PACKAGE OPTION ADDENDUM www.ti.com 3-Oct-2023 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) ADS4229IRGCR ACTIVE VQFN RGC 64 2000 RoHS & Green NIPDAUAG Level-3-260C-168 HR -40 to 85 AZ4229 Samples ADS4229IRGCT ACTIVE VQFN RGC 64 250 RoHS & Green NIPDAUAG Level-3-260C-168 HR -40 to 85 AZ4229 Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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