BTA16-800BW

BTA16 FSSeries 16A 3Quadrants TRIACs Product Summary Symbol Value Unit IT(RMS) 16 A VDRM VRRM 600 / 800 V VTM 1.55 V Feature Application With high ability to withstand the shock loading of large current,With high commutation performances, 3 quadrants products especially recommended for use on inductive load. Washing machine, vacuums, massager, solid state relay, AC Motor speed regulation and so on. Package Circuit diagram TO-220A Insulated Marking BTA16 600BW XXXX www.fuxinsemi.com Page 1 Ver2.1 BTA16 FSSeries 16A 3Quadrants TRIACs Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Repetitive peak off-state voltage VDRM 600 / 800 V Repetitive peak reverse voltage VRRM 600 / 800 V RMS on-state current IT(RMS) 16 A ITSM 160 A I2t 140 A2s Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG =2×IGT) dIT/dt Peak gate current 50 Ⅰ-Ⅱ-Ⅲ A/μs IGM 4 A PG(AV) 1 W Junction Temperature TJ -40 ~ +125 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Average gate power dissipation Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Value Test Condition Gate trigger current IGT VD =12V RL = 33Ω Ⅰ-Ⅱ-Ⅲ Gate trigger voltage VGT Tj =25℃ Ⅰ-Ⅱ-Ⅲ Gate non-trigger voltage VGD VD =VDRM Tj =125℃ latching current IL IG =1.2IGT Holding current IH IT =500mA Critical-rate of rise of commutation voltage dVD/dt CW BW ≤35 ≤50 Unit mA ≤1.3 V ≥0.2 V Ⅰ-Ⅲ ≤50 ≤70 Ⅱ ≤60 ≤80 ≤30 ≤50 mA ≥1000 V/μs VD=2/3VDRM ≥500 Gate Open Tj =125℃ mA STATIC CHARACTERISTICS Forward "on" voltage VTM Repetitive Peak Off-State Current IDRM Repetitive Peak Reverse Current IRRM ITM =23A tp=380μs VD =VDRM VR =VRRM ≤1.55 V Tj=25℃ ≤5 μA Tj=125℃ ≤1 mA THERMAL RESISTANCES Thermal resistance www.fuxinsemi.com Rth(j-c) Junction to case(AC) 2.1 ℃/W Rth(j-a) Junction to ambient 60 ℃/W Page 2 Ver2.1 BTA16 FSSeries 16A 3Quadrants TRIACs Typical Characteristics FIG.2: RMS on-state current versus case temperature (full cycle) 20 I T(RMS) (A) P(W) FIG.1: Maximum power dissipation versus RMS on-state current (full cycle) 18 16 14 15 12 10 10 8 6 5 4 2 0 0 2 4 6 8 10 12 0 14 16 I T(RMS) (A) 0 50 FIG.3: Surge peak on-state current versus number of cycles 100 150 Tc ) FIG.4: On-state characteristics (maximum values) I TMS (A) I TM (A) 200 180 100 160 Tj=125ºC 140 120 100 10 80 60 Tj=25ºC 40 20 0 1 1 10 100 1000 Number of cycles 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V TM (V) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature (typical values) ) 1000 I TMS (A) 3000 I GT,I H,I L(T) / I GT,I H,I L(T=25 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms 2.5 2.0 IGT 1.5 IH&IL 1.0 0.5 100 0.01 www.fuxinsemi.com 0.1 1 10 tp(ms) 0.0 -40 -20 0 20 40 60 80 100 120 140 Tj Page 3 ) Ver2.1 BTA16 FSSeries 16A 3Quadrants TRIACs Ordering Information BT A 16 _ 600 B W W: 3Q Triacs B:I GT1-3 ≤50mA C:IGT1-3 ≤35mA A: TO-220A Insulated 600:VDRM /VRRM≥ 600V 800:VDRM /VRRM≥800V IT(RMS): 16A TO-220A Insulated Package Information Dimensions In Millimeters www.fuxinsemi.com Dimensions In Inches Symbol Min Max Min Max A 9.8 10.4 0.385 0.409 B 2.65 3.1 0.104 0.122 C 2.8 4.2 0.110 0.165 D 0.7 0.92 0.027 0.036 E 3.75 3.95 0.147 0.155 0.633 F 14.8 16.1 0.582 G 13.05 13.6 0.513 0.535 H 2.4 2.7 0.094 0.106 I 4.38 4.61 0.172 0.181 J 1.15 1.36 0.045 0.053 K 5.85 6.82 0.230 0.268 L 2.35 2.75 0.092 0.108 M 0.35 0.65 0.013 0.025 N 1.18 1.42 0.046 0.055 Page 4 Ver2.1