LSGN10R080

LSGN10R080 Lonten N-channel 100V, 83A, 8.0mΩ Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 100V effect transistors are using split gate trench DMOS RDS(on),max@ VGS=10V technology. This advanced technology has been ID 8.0mΩ 83A especially tailored to minimize on-state resistance, provide superior switching performance, and with Pin Configuration stand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features  100V,83A, RDS(on),max =8.0mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green device available DFN5×6 D G Applications  Motor Drives  UPS  DC-DC Converter Pb S Absolute Maximum Ratings N-Channel MOSFET TC = 25°C unless otherwise noted Parameter Symbol Value Unit 100 V 83 A 52 A IDM 332 A Gate-Source voltage VGSS ±20 V Avalanche energy2) EAS 132 mJ Power Dissipation ( TC = 25°C ) PD 100 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Value Unit Drain-Source Voltage VDSS Continuous drain current ( TC = 25°C ) ID Continuous drain current ( TC = 100°C ) Pulsed drain current 1) Thermal Characteristics Parameter Symbol Thermal Resistance, Junction-to-Case RθJC 1.25 °C/W Thermal Resistance, Junction-to-Ambient RθJA 55 °C/W Package Marking and Ordering Information Device Device Package Marking LSGN10R080 DFN5X6 LSGN10R080 Version 1.0, Jun-2020 1 www.lonten.cc Electrical Characteristics Parameter LSGN10R080 TJ = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=250uA 100 --- --- V Gate threshold voltage VGS(th) VDS=VGS, ID=250uA 2 3 4 V Drain-source leakage current IDSS VDS=100 V, VGS=0V, TJ = 25°C --- --- 1 μA Gate leakage current, Forward IGSSF VGS=20 V, VDS=0 V --- --- 100 nA Gate leakage current, Reverse IGSSR VGS=-20 V, VDS=0 V --- --- -100 nA Drain-source on-state resistance RDS(on) VGS=10 V, ID=30 A --- 7.1 8.0 mΩ Forward transconductance gfs VDS =5V , ID=30A --- 65 --- S --- 1895 --- --- 572.5 --- --- 11.8 --- --- 16.6 --- --- 20 --- Dynamic characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) --- 68 --- Fall time tf --- 20.8 --- Gate resistance Rg --- 1.7 --- 10 --- --- 4.2 --- --- 28.3 --- VDS = 50 V, VGS = 0 V, F = 1MHz VDD = 50V,VGS=10V, ID = 30A VGS=0V, VDS=0V, F=1MHz pF ns Ω Gate charge characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDS=50 V, ID=50A, VGS= 10 V --- nC Drain-Source diode characteristics and Maximum Ratings Continuous Source Current IS --- --- 83 A Pulsed Source Current ISM --- --- 332 A 3) Diode Forward Voltage VSD VGS=0V, IS=30A, TJ=25℃ --- 0.9 --- V Reverse Recovery Time trr IS=30A, di/dt=100A/us, --- 50 --- ns Reverse Recovery Charge Qrr TJ=25℃ --- 72 --- nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature. 2: VDD=50V, VGS=10V, L=0.5mH, IAS=23A, RG=25Ω, Starting TJ=25℃. 3: Pulse Test：Pulse Width ≤300µs, Duty Cycle≤2％. Version 1.0, Jun-2020 2 www.lonten.cc LSGN10R080 Electrical Characteristics Diagrams Figure 1.On-Region Characteristics Figure 2.Transfer Characteristics 50 250 VGS = 10 V VGS = 8 V VGS = 7 V Drain current ID(A) 200 40 150 Drain current I D(A) VGS = 6 V VGS = 5.5 V VGS = 5 V 100 VGS = 4.5 V 30 T=150°C 20 T=25°C 10 50 0 0 2 4 6 0 8 0 1 2 3 4 5 6 7 8 Gate-source voltage V GS(V) Drain-source voltage VDS(V) Figure 3.Body-Diode Characteristics Figure 4.On-Resistance Variation vs.Drain Current 1000 10 VGS=10V 9 T=150°C 10 RDS( ON) ( m) Diode current IS(A) 100 T=25°C 1 8 7 6 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 5 1.6 0 5 10 Diode forward voltage VSD(V) Figure 5.Rds(on) vs. Gate Voltage 20 25 30 35 40 Figure 6.On-Resistance vs.Temperature 2.0 100 ID=30A 1.8 80 Drain-source on-resistance RDS(ON)(normalized) On-resistance RDS(ON)(m) 15 Drain current ID(A) 1.6 1.4 60 1.2 40 1.0 0.8 T=150°C 20 VGS=10V, ID=30A, 0.6 T=25°C 0 3 4 5 Pulse test 6 7 8 9 10 Gate-source voltage VGS(V) Version 1.0, Jun-2020 0.4 -50 -25 0 25 50 75 Junction temperature Tj 3 100 125 150 (℃) www.lonten.cc LSGN10R080 Figure 7.Threshold Voltage vs.Temperature 1.4 Figure 8.Breakdown Voltage vs.Temperature 1.20 Drain-source voltage BVDSS(normalized) Gate threshold voltage Vth(normalized) ID=250A 1.15 1.2 1.10 1.05 1.0 1.00 0.8 0.95 0.90 0.6 VGS=0V, 0.85 0.4 -50 -25 0 25 50 75 100 125 0.80 150 ID=250A -50 -25 0 25 50 75 100 125 150 Junction Temperature Tj (℃) Junction temperature Tj (℃) Figure 9.Capacitance Characteristics Figure 10.Gate Charge Characteristics 10000 10 Gate-source voltage V GS(V) Ciss Capacitance(pF) 1000 Coss 100 Crss 10 1 f=1MHZ, VGS=0V 0 8 6 4 2 0 20 40 60 80 100 VDD=50V, ID=50A 0 5 10 Drain-source voltage VDS(V) Figure 11.Drain Current Derating 15 20 25 30 35 Total gate charge QG(nC) Figure 12.Power Dissipation vs.Temperature 120 100 Drain power dissipation PD(W) 100 80 ID(A) 60 40 20 0 80 60 40 20 0 25 50 75 100 125 0 150 Case temperature T C (℃) Version 1.0, Jun-2020 0 25 50 75 100 Case temperature TC 4 125 150 (℃) www.lonten.cc LSGN10R080 Figure 13.Maximum Safe Operating Area 1000 100µS 1ms 100 10ms 100ms ID(A) Limited by RDS(on) 10 DC 1 Notes: Tc = 25°C Tj = 150°C Single Pulse 0.1 0.1 1 10 100 Drain-Source voltage VDS(V) Figure 14. Normalized Maximum Transient Thermal Impedance (RthJC) Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM T ON SINGLE T D = TON/T TJpeak = TC+P DMXRθJC Single Pulse 0.001 0.00001 0.0001 R 0.001 0.01 0.1 θJC =1.25℃/W 1 10 t , Pulse Width (s) Version 1.0, Jun-2020 5 www.lonten.cc LSGN10R080 Test Circuit & Waveform Figure 15. Gate Charge Test Circuit & Waveform Figure 16. Resistive Switching Test Circuit & Waveform Figure 17. Unclamped Inductive Switching (UIS) Test Circuit & Waveform Figure 18. Diode Recovery Circuit & Waveform Version 1.0, Jun-2020 6 www.lonten.cc LSGN10R080 Mechanical Dimensions for DFN5×6 COMMON DIMENSIONS MILLIMETERS INCHS SYMBOL MIN NOM MAX MIN NOM MAX A 1 1.1 1.2 0.039 0.043 0.047 b 0.3 0.4 0.5 0.012 0.016 0.020 C 0.154 0.254 0.354 0.006 0.010 0.014 D1 5 5.2 5.4 0.197 0.205 0.213 D2 3.8 4.1 4.25 0.150 0.161 0.167 E1 5.95 6.15 6.35 0.234 0.242 0.250 E2 5.66 5.86 6.06 0.223 0.231 0.239 E4 3.52 3.72 3.92 0.139 0.146 0.154 e 1.27 BSC 0.050 BSC H 0.4 0.5 0.6 0.016 0.020 0.024 L 0.5 0.6 0.7 0.020 0.024 0.028 L1 - - 0.12 - - 0.005 K 1.14 1.29 1.44 0.045 0.051 0.057 DFN5×6 Part Marking Information Lonten Logo Lonten Part Number LSGN10R080 “XX” Foundry & Assembly code XXYWWLL “LL” Manufacturing code “YWW” Date Code Version 1.0, Jun-2020 7 www.lonten.cc LSGN10R080 Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. 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The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Version 1.0, Jun-2020 8 www.lonten.cc