IRF540NSTRPBF

IRF540N/NS 100V N-Channel MOSFET FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS) to r TO-263  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Marking IRF540N TO-220 IRF540N IRF540NS TO-263 IRF540NS nd Package mi co Device uc Device Marking and Package Information Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Value Symbol Drain-Source Voltage (VGS = 0V) Se Parameter O Continuous Drain Current (note1) TO-263 VDSS 100 V ID 33 A IDM 120 A VGSS ±20 V (note2) EAS 335 mJ Single Pulse Avalanche Current (note1) IAS 22 A Repetitive Avalanche Energy (note1) EAR 201 mJ PD 110 W TJ, Tstg -55~+150 ºC JS Single Pulse Avalanche Energy MI Gate-Source Voltage CR Pulsed Drain Current Unit TO-220 Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range Thermal Resistance Value Parameter Symbol Unit TO-220 TO-263 Thermal Resistance, Junction-to-Case RthJC 1.14 Thermal Resistance, Junction-to-Ambient RthJA 60 K/W www.jsmsemi.com 第１页，共５页 IRF540N/NS 100V N-Channel MOSFET Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 100 -- -- VDS = 100V, VGS = 0V, TJ = 25ºC -- -- 1 Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS IGSS VGS = ±20V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 15A Gate-Source Leakage Input Capacitance nd Dynamic Ciss Reverse Transfer Capacitance Crss Total Gate Charge Qg Qgs Gate-Drain Charge Qgd VDD 80V, ID = 30A, VGS = 10V Se Gate-Source Charge co Coss mi Output Capacitance VGS = 0V, VDS = 25V, f = 1.0MHz Turn-on Delay Time td(on) tr Turn-on Rise Time Turn-off Delay Time VDD = 50V, ID =10A, RG = 25 Ω O td(off) tf CR Turn-off Fall Time V μA -- -- 100 -- -- ±100 nA 2.0 -- 4.0 V -- 30 38 mΩ -- 1331 -- -- 276 -- -- 88 -- -- 53 -- -- 6 -- -- 29 -- -- 39 -- -- 45 -- -- 207 -- -- 64 -- -- -- 33 -- -- 120 -- -- 2 V -- 102 -- ns -- 0.46 -- μC uc VDS = 80V, VGS = 0V, TJ = 125ºC to r Static pF nC ns Drain-Source Body Diode Characteristics MI Continuous Body Diode Current IS TC = 25 ºC ISM Body Diode Voltage VSD JS Pulsed Diode Forward Current Reverse Recovery Time trr Reverse Recovery Charge Qrr TJ = 25ºC, ISD = 15A, VGS = 0V VGS = 0V,IS = 10A, diF/dt =100A /μs A Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=1mH, VDD = 50V, RG = 25 Ω, Starting TJ = 25ºC 3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% www.jsmsemi.com 第２页，共５页 IRF540N/NS 100V N-Channel MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics (T J = 25ºC) 103 60 40 20 102 TJ = 150ºC 101 TJ = 25ºC to r 15V 10V 8V 7V 6V 5V IS, Source Current (A) 100 10-1 0 0 2 4 6 8 10 uc ID, Drain Current (A) 80 Figure 2. Body Diode Forward Voltage 0.2 12 0.4 0.6 0.8 1 1.2 1.4 VSD, Source-to-Drain Voltage (V) nd VDS, Drain-to-Source Voltage (V) Figure 3. Drain Current vs. Temperature Figure 4. BVDSS Variation vs. Temperature 1.15 co 35 mi BVDSS (Normalized) 25 20 Se ID, Drain Current (A) VGS = 0V ID = 250uA 30 15 10 1.1 1.05 1 0.95 5 30 60 90 CR 0 0.9 O 0 120 -50 150 TC, Case Temperature (A) RDS(on), On-Resistance (Normalized) MI JS ID, Drain Current (A) TJ = 25ºC 45 TJ = 150ºC 15 0 0 2 4 6 100 150 Figure 6. On-Resistance vs. Temperature 60 30 50 TJ, Junction Temperature (ºC) Figure 5. Transfer Characteristics 75 0 8 10 3 VGS = 10V ID = 15A 2.5 2 1.5 1 0.5 0 VGS, Gate-to-Source Voltage (V) www.jsmsemi.com -50 0 50 100 150 TJ, Junction Temperature (ºC) 第３页，共５页 IRF540N/NS 100V N-Channel MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. Capacitance Figure 8. Gate Charge 10 103 Coss Crss 102 VGS = 0V f = 1MHz 101 10 20 30 8 VDD = 50V VDD = 80V 6 4 2 0 0 40 10 20 30 40 50 60 nd 0 VDD = 20V to r Capacitance (pF) Ciss uc VGS, Gate-to-Source Voltage (V) 104 VDS, Drain-to-Source Voltage (V) Figure 10. Transient Thermal Impedance TO-220,TO-263,TO-252 mi 101 co Qg, Total Gate Charge (nC) Se 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse O 10-1 CR 10-2 MI 10-3 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 JS Tp, Pulse Width (s) www.jsmsemi.com 第４页，共５页 IRF540N/NS 100V N-Channel MOSFET nd uc to r Figure A：Gate Charge Test Circuit and Waveform MI CR O Se mi co Figure B：Resistive Switching Test Circuit and Waveform JS Figure C：Unclamped Inductive Switching Test Circuit and Waveform www.jsmsemi.com 第５页，共５页