HX6383KUA

HX6383 Specifications Micropower CMOS Output Hall Effect Switch HX6383 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity micro-power switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. HX6383 is special made for low operation voltage, 1.65V, to active the chip which is includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low inputoffset errors, and small component geometries. This device requires the presence of omni-polar magnetic fields for operation. The package type is in a Halogen Free version has been verified by third party Lab. Features and Benefits  CMOS Hall IC Technology  Strong RF noise protection  1.65 to 3.5V for battery-powered applications  Omni polar, output switches with absolute value of North or South pole from magnet  Operation down to 1.65V, Micro power consumption  High Sensitivity for reed switch replacement applications  Multi Small Size option  Low sensitivity drift in crossing of Temp. range  Ultra Low power consumption at 5uA (Avg)  High ESD Protection, HMB > ±4KV( min )  Totem-pole output Applications  Solid state switch  Handheld Wireless Handset Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip Video Set)  Lid close sensor for battery powered devices  Magnet proximity sensor for reed switch replacement in low duty cycle applications  Water Meter  Floating Meter  PDVD  NB 1 HX6383 Specifications Micropower CMOS Output Hall Effect Switch Part No. HX6383EST Temperature Suffix E (-40℃ to + 85℃) Package Type ST (SOT-23) HX6383ESN E (-40℃ to + 85℃) SN (SOT-553) HX6383ESQ E (-40℃ to + 85℃) SQ (QFN2020-3) HX6383KUA E (-40℃ to + 125℃) UA (TO-92S) Custom sensitivity selection is available by HX sorting technology Functional Diagram VDD Awake/Sleep VDD Timing Control Offset Cancellation Control Amp Logic Out Hall Sensor GND Note: Static sensitive device; please observe ESD precautions. Reverse VDD protection is not included. For reverse voltage protection, a 100Ω resistor in series with VDD is recommended. HX 6383, HBM > ±4KV which is verified by third party lab. 2 HX6383 Specifications Micropower CMOS Output Hall Effect Switch Absolute Maximum Ratings At(Ta=25℃) Characteristics Supply voltage,(VDD) Output Voltage,(Vout) Reverse Voltage , (VDD) (VOUT) Magnetic flux density Values 6 6 -0.3 Unlimited Unit V V V Gauss 1 mA Operating temperature range, (Ta) -40 to +85 ℃ Storage temperature range, (Ts) -65 to +150 ℃ Maximum Junction Temp,(Tj) 150 ℃ (θJA) ST / SN / UA / SQ 310 / 540 / 206 / 543 ℃/W (θJC) ST / SN / UA / SQ Package Power Dissipation, (PD) ST / SN / UA / SQ 223 / 390 / 148 / 410 400 / 230 / 606 / 230 ℃/W mW Output current,(IOUT) Thermal Resistance Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability. Electrical Specifications DC Operating Parameters：Ta=25℃, VDD=1.8V Parameters Test Conditions Supply Voltage,(VDD) Output Leakage Current,(Ioff) Operating Awake State Sleep State Average Output off Output High Voltage,(VOH) IOUT=0.5mA(Source) Output Low Voltage,(VOL) IOUT=0.5mA(Sink) Awake mode time,(Taw) Operating Sleep mode time,(TSL) Duty Cycle,(D,C) Electro-Static Discharge (BOPS) Operating Supply Current,(IDD) Operate Point, Release Point Hysteresis,(BHYS) Min 1.65 Typ 1.4 3.6 5 Max 6 3 7 10 1 4 S pole to branded side, B > BOP, Vout On 0.2 V 40 80 uS 40 0.1 80 30 55 mS % KV (BOPN) (BRPS) N pole to branded side, B > BOP, Vout On (BRPN) N pole to branded side, B < BRP, Vout Off -20 |BOPx - BRPx| 10 S pole to branded side, B < BRP, Vout Off 3 -55 10 V mA μA μA uA V VDD-0.2 HBM Units -30 20 -10 Gauss Gauss Gauss HX6383 Specifications Micropower CMOS Output Hall Effect Switch Typical Application circuit C1：10nF C2：100pF Sensor Location, package dimension and marking HX6383 Package ST Package(TSOT-23) (Top View) Hall Plate Chip Location (Bottom view) 3 3 0.80 6383XX 1 2 2 Hall Sensor Location NOTES: 1. PINOUT (See Top View at left:) Pin 1 VDD Pin 2 Output Pin 3 GND 2. Controlling dimension: mm; 4 1 1.45 HX6383 Specifications Micropower CMOS Output Hall Effect Switch SN Package (SOT-553) (Top View) Hall Plate Chip Location (Top View) 0.80 5 4 5 4 6383XX 1 2 0.60 3 1 2 3 Hall Sensor Location NOTES: 1. 2. PINOUT (See Top View at left:) Pin 1 NC Pin 2 GND Pin 3 NC Pin 4 VDD Pin 5 Out Controlling dimension: mm; SQ Package Hall Plate Chip Location 6383 XX (Top view) NOTES: 3. 1 PINOUT (See 3 Top View at left) 1 2 4. Pin 1 VDD Pin 2 Output Pin 3 GND 1 Location Controlling dimension: mm; 3 5. Chip rubbing will be 10mil maximum; 6. Hall Sensor Chip must be in PKG. center. 5 1 2 HX6383 Specifications Micropower CMOS Output Hall Effect Switch UA Package Hall Chip location 6383 XXX NOTES: 1).Controlling dimension: mm 2).Leads must be free of flash and plating voids 3).Do not bend leads within 1 mm of lead to package interface. 4).PINOUT: Pin 1 VDD Pin 2 GND Pin 3 Output 6 HX6383 Specifications Micropower CMOS Output Hall Effect Switch TSOT- 23 package Tape On Reel Dimension NOTES:    Material: Conductive polystyrene;   Camber not to exceed 1mm in 100mm;  (S.R. OHM/SQ) Means surface electric resistivity of the carrier tape. DIM in mm; 10 sprocket hole pitch cumulative tolerance ±0.2; Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole; 7 HX6383 Specifications Micropower CMOS Output Hall Effect Switch QFN2020-3 Tape On Reel Dimension NOTES: • • • • • • 8 Material: Conductive polystyrene; DIM in mm; 10 sprocket hole pitch cumulative tolerance ±0.2; Camber not to exceed 1mm in 100mm; Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole; (S.R. OHM/SQ) Means surface electric resistivity of the carrier tape. HX6383 Specifications Micropower CMOS Output Hall Effect Switch PSOT-23 package Tape On Reel Dimension NOTES: 7. Material: Conductive polystyrene; 8. DIM in mm; 9. 10 sprocket hole pitch cumulative tolerance ±0.2; 10. Camber not to exceed 1mm in 100mm; 11. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole; 12. (S.R.OHM/SQ) Means surface electric resistivity of the carrier tape. 9 HX6383 Specifications Micropower CMOS Output Hall Effect Switch IR reflow curve ST/SQ/SP Soldering Condition UA Soldering Condition 10 HX6383 Specifications Carton Carton Carton Micropower CMOS Output Hall Effect Switch Packing specification: Package Bag TO-92S 1,000pcs/bag 10 bags/box 10 boxes/carton 5 boxes/carton 4 boxes/carton PSOT-23-3L 3,000pcs/reel 10 reels/box 4 boxes/carton 4boxes/carton 4 boxes/carton TSOT-23-3L 3,000pcs/reel 5 reels/box 6 boxes/carton 6 boxes/carton 6 boxes/carton QFN2020-3 3,000pcs/reel 5 reels/box 6 boxes/carton 6 boxes/carton 6 boxes/carton TO-92S Box Weight PSOT-23-3L Weight TSOT-23-3L Weight QFN2020-3 Weight 1000pcs/bag 0.11kg 3000pcs/reel 0.13kg 3000pcs/reel 0.12kg 3000pcs/reel 0.10kg 10 bags/box 1.26kg 10 reels/box 1.44kg 5 reels/box 0.72kg 5 reels/box 0.64kg 10 boxes/carton 13.38kg 4 boxes/carton 6.50kg 6 boxes/carton 4.79kg 6 boxes/carton 4.34kg 5 boxes/carton 6.82kg 4 boxes/carton 6.50kg 6 boxes/carton 4.79kg 6 boxes/carton 4.34kg 5.54kg 4 boxes/carton 6.50kg 6 boxes/carton 4.79kg 6 boxes/carton 4.34kg 4 boxes/carton 11