DTC143ZE

DTCxxxxx SOT-523 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter 2 Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V IC Collector Current 100 mA PD Power Dissipation 150 mW Thermal Resistance from Junction to Ambient 600 °C /W -55 to +150 °C RθJA TJ TSTG Junction & Storage Temperature Range 1 SOT-523 These ratings are limiting values above which the serviceability of the device may be impaired. Specification Features: ƒ Simplifies Circuit Design ƒ Reduces Board Space ƒ Reduces Component Count ƒ RoHS Compliant ƒ Green EMC ƒ Matte Tin(Sn) Lead Finish ƒ Weight: approx. 0.002g www.yongyutai.com Electrical Symbol: PAGE 1 DTCxxxxx Device Marking & Resistor Values: Device Marking R1 (KΩ) R2 (KΩ) DTC114EE 24 10 10 DTC124EE 25 22 22 DTC144EE 26 47 47 DTC114YE 64 10 47 DTC114TE 04 10 ∞ DTC143TE 03 4.7 ∞ DTC123EE 22 2.2 2.2 DTC143EE 23 4.7 4.7 DTC143ZE E23 4.7 47 DTC124XE 45 22 47 DTC123JE E42 2.2 47 Electrical Characteristics (TA = 25°C unless otherwise noted) Off Characteristics Symbol Parameter Test Condition Limits Min Typ Max Unit ICBO Collector-Base Cutoff Current VCB =50V, IE =0A - - 100 nA ICEO Collector-Emitter Cutoff Current VCE =50V, IB =0A - - 500 nA IEBO Emitter-Base Cutoff Current VEB =6.0V, IC =0A DTC114EE - - 0.50 DTC124EE - - 0.20 DTC144EE - - 0.10 DTC114YE - - 0.20 DTC114TE - - 0.90 DTC143TE - - 1.90 DTC123EE - - 2.30 DTC143EE - - 1.50 DTC143ZE - - 0.18 DTC124XE - - 0.13 DTC123JE - - 0.20 V(BR)CBO Collector-Base Breakdown Voltage IC =10uA, IE =0A 50 - - V(BR)CEO Collector-Emitter Breakdown Voltage (Note 1) IC =2.0mAA, IB =0A 50 - - mA Volts Volts Note 1: Pulse Test. Pulse width