www.msksemi.com
DTCXXXXX-MS
Semiconductor
Compiance
Features:
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
RoHS Compliant
Green EMC
Matte Tin(Sn) Lead Finish
Weight: approx. 0.002g
SOT-523
Electrical Symbol:
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
IC
Collector Current
100
mA
PD
Power Dissipation
150
mW
Thermal Resistance from Junction to Ambient
600
°C /W
-55 to +150
°C
RθJA
TJ TSTG
Junction & Storage Temperature Range
These ratings are limiting values above which the serviceability of the device may be impaired.
www.msksemi.com
DTCXXXXX-MS
Semiconductor
Compiance
Device Marking & Resistor Values:
P/N
Mark
R1 (KΩ)
R2 (KΩ)
DTC114EE-MS
24
10
10
DTC124EE-MS
25
22
22
DTC144EE-MS
26
47
47
DTC114YE-MS
64
10
47
DTC114TE-MS
04
10
∞
DTC143TE-MS
03
4.7
DTC123EE-MS
22
2.2
2.2
DTC143EE-MS
23
4.7
4.7
DTC143ZE-MS
E23
4.7
47
DTC124XE-MS
45
22
47
DTC123JE-MS
E42
2.2
47
Electrical Characteristics
∞
(T A = 25°C unless otherwise noted)
Off Characteristics
Symbol
Parameter
Test Condition
Limits
Min
Typ
Max
Unit
ICBO
Collector-Base Cutoff Current
VCB =50V, IE =0A
-
-
100
nA
ICEO
Collector-Emitter Cutoff Current
VCE =50V, IB =0A
-
-
500
nA
IEBO
Emitter-Base Cutoff Current
VEB =6.0V, IC =0A
DTC114EE-MS
-
-
0.50
DTC124EE-MS
-
-
0.20
DTC144EE-MS
-
-
0.10
DTC114YE-MS
-
-
0.20
DTC114TE-MS
-
-
0.90
DTC143TE-MS
-
-
1.90
DTC123EE-MS
-
-
2.30
DTC143EE-MS
-
-
1.50
DTC143ZE-MS
-
-
0.18
DTC124XE-MS
-
-
0.13
DTC123JE-MS
-
-
0.20
V(BR)CBO
Collector-Base Breakdown Voltage
IC =10uA, IE =0A
50
-
-
V(BR)CEO
Collector-Emitter Breakdown Voltage
(Note 1)
IC =2.0mA, IB =0A
50
-
-
mA
Volts
Volts
Note 1: Pulse Test. Pulse width
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