DTC143ZE

DTC114EE to DTC123JE DTC114EE to DTC123JE NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network General description SOT-523 Bias Resistor Transistor. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network. This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The device is 3 designed for low power surface mount applications. FEATURES • • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.002g SOT-523 (SC-75A) Electrical Symbol: Absolute Maximum Ratings （TA = 25°C unless otherwise noted） Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V IC Collector Current 100 mA PD Power Dissipation 150 mW Thermal Resistance from Junction to Ambient 600 °C /W -55 to +150 °C RθJA TJ TSTG Junction & Storage Temperature Range www.doeshare.net DTC114EE to DTC123JE Device Marking & Resistor Values: Device Marking R1 (KΩ) R2 (KΩ) DTC114EE 24 10 10 DTC124EE 25 22 22 DTC144EE 26 47 47 DTC114YE 64 10 47 DTC114TE 04 10 ∞ DTC143TE 03 4.7 ∞ DTC123EE 22 2.2 2.2 DTC143EE 23 4.7 4.7 DTC143ZE E23 4.7 47 DTC124XE 45 22 47 DTC123JE E42 2.2 47 Electrical Characteristics (TA = 25°C unless otherwise noted) Off Characteristics Limits Symbol Parameter Test Condition Unit Min Typ Max ICBO Collector-Base Cutoff Current VCB =50V, IE =0A - - 100 nA ICEO Collector-Emitter Cutoff Current VCE =50V, IB =0A - - 500 nA Emitter-Base Cutoff Current DTC114EE 0.50 DTC124EE 0.20 DTC144EE IEBO DTC114YE - - DTC114TE - - - - - - - - DTC123EE - - - - DTC143EE - - - - DTC143ZE - - - - DTC143TE VEB =6.0V, IC =0A 0.10 0.20 0.90 1.90 mA 2.30 1.50 0.18 DTC124XE 0.13 DTC123JE 0.20 V(BR)CBO Collector-Base Breakdown Voltage IC =10uA, IE =0A 50 - - Volts V(BR)CEO Collector-Emitter Breakdown Voltage (Note 1) IC =2.0mAA, IB =0A 50 - - Volts Note 1: Pulse Test. Pulse width