PNT523T503E0-2

PNT523T503E0-2 High EB High DC gain Ultra-Small package switch transistor Feature 3-Collector This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant.  Package: SOT-523  Emitter -Base Breakdown Voltage 11V  High DC current gain typical  Low Saturation Voltage 80mv  0.15 continuous collector current  NPN switch transistor 380 2-Emitter 1-Base Top View Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Value Units Collector-Emitter Breakdown Voltage V (BR)CEO 50 V Collector-Base Breakdown Voltage V (BR)CBO 80 V Emitter -Base Breakdown Voltage V (BR)EBO 11 V Collector Current IC 0.15 A Total Dissipation @25°C Ptot 0.15 W Storage Temperature Tstg -65~150 °C Tj 150 °C Max. Operating Junction Temperature Rev.06.4 1 www.prisemi.com High EB High DC gain Ultra-Small package switch transistor PNT523T503E0-2 Absolute maximum rating@25℃ Parameter Symbol Conditions Min. Collector-Base Breakdown Voltage BVCBO IC=50uA 80 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA 50 V Emitter-Base Breakdown Voltage BVEBO IE=50uA Collector Cut-off Current (IE=0) ICBO VCB=60V 0.1 μA Emitter Cut-off Current(IC=0) IEBO VEB=7V 0.1 μA DC Current Gain hFE IC=1mA,VCE=6V 200 350 - VCE(sat) IC=50mA,IB=5mA - Transition frequency fT Output Capacitance Cob Collector-Emitter Saturation Voltage Typ. Max. Units 11 V 0.08 V VCE=12V,IE=-2mA,f=100MHz 200 MHz VCE=12V,IE=0mA,f=1MHz 2 3.5 pF Typical Characteristics h FE 60 160μA IC, Collector Current (mA) T A =25℃ 140μA 40 120μA 100 100μA 80μA 20 60μA 40μA 0 IB =20μA 0 2 4 6 10 8 0.01 0.1 1 10 VCE=1V Fig 2.DC Current Gain V CE ，Collector Voltage(V) Figure 1. IC-VCE V CE(SAT ) % Of Rated Power 100 80 60 0.1 40 20 0 0 25 50 75 100 125 0.01 0.01 150 Ambient Temperature - T A (°C) 1 10 hFE=100 Fig3. Power Derating Curve Rev.06.4 0.1 IC(A) Fig 4.Collector-Emitter Saturation Voltage 2 www.prisemi.com High EB High DC gain Ultra-Small package switch transistor V BE(SAT) PNT523T503E0-2 T(ns) 0.9 h FE =50 500 td Tp=40us 400 0.8 300 0.7 tr 200 100 0.6 0 0 0.01 0.1 1 10 IC(A) hFE=100 0 0.5 1.0 1.5 2.0 2.5 h FE =100 Fig 5. Base-Emitter Saturation Voltage 3.0 IC(A) Fig 6.Switching Times Resistive Load T(ns) h FE =50 500 Tp=40us 400 ts 300 200 tf 100 0 0 0.5 1.0 1.5 2.0 2.5 h FE =100 3.0 IC(A) Fig 7. Switching Times Resistive Load Solder Reflow Recommendation Peak Temp=257℃, Ramp Rate=0.802deg. ℃/sec 280 240 200 160 120 80 40 0 0 30 60 90 120 150 180 240 210 270 300 330 360 390 420 450 480 Time (sec) Rev.06.4 3 www.prisemi.com High EB High DC gain Ultra-Small package switch transistor PNT523T503E0-2 Product dimension（SOT-523） θ D b2 C (3) A1 E E1 A2 (2) (1) L L1 e b1 A e1 Millimeters Inches Dim MIN MAX MIN MAX A 0.700 0.900 0.028 0.035 A1 0.000 0.100 0.000 0.004 A2 0.700 0.800 0.028 0.031 b1 0.150 0.250 0.006 0.010 b2 0.250 0.350 0.010 0.014 c 0.100 0.200 0.004 0.008 D 1.500 1.700 0.059 0.067 E 0.700 0.900 0.028 0.035 E1 1.450 1.750 0.057 0.069 e e1 0.500TYP 0.900 L Rev.06.4 0.020TYP 1.100 0.035 0.400REF 0.043 0.016REF L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 4 www.prisemi.com High EB High DC gain Ultra-Small package switch transistor PNT523T503E0-2 a Millimeters Dim b e d b MIN MAX a -- 0.5 b -- 0.6 c -- 1.0 d -- 1.24 e -- 0.4 c Marking information 1F Ordering information Device Package Reel Shipping PNT523T503E0-2 SOT-523 (Pb-Free) 7'' 3000 / Tape & Reel Rev.06.4 5 www.prisemi.com High EB High DC gain Ultra-Small package switch transistor PNT523T503E0-2 IMPORTANT NOTICE and are registered trademarks of Pri semi Electronics Co., Ltd (Prisemi) ,Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does P risemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for eac h customer application by customer’s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed t o be used wit h ordinary electronic equipment or devices , Should you intend to use thes e products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospac e machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: http://www.prisemi.com For additional information, please contact your local Sales Representative. ©Copyright 2009, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.06.4 6 www.prisemi.com