2SA1661 DY

KTA1661 BIPOLAR TRANSISTOR (PNP) FEATURES  Complementary to KTC4373  High Transition Frequency  High Current Application  High Voltage  Surface Mount device SOT-89 MECHANICAL DATA     Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.055 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Base Current Collector Power Dissipation IB -160 mA PC 500 mW Thermal Resistance From Junction To Ambient RθJA 250 °C/W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~+150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Conditions V(BR)CBO Collector-base breakdown voltage IC=-1mA，IE=0 -120 V Collector-emitter breakdown voltage V(BR)CEO -120 V IC=-10mA，IB=0 Emitter-base breakdown voltage V(BR)EBO -5 V IE=-1mA，IC=0 Collector cut-off current ICBO -0.1 µA VCB=-120V, IE=0 Emitter cut-off current IEBO -0.1 µA VEB=-5V, IC=0 DC current gain hFE 80 VCE=-5V, IC=-100mA 240 VCE(sat) -1 V IC=-500mA，IB=-50mA Base-emitter voltage VBE -1 V VCE=-5V, IC=-500mA Transition frequency fT Collector-emitter saturation voltage Collector output capacitance CLASSIFICATION OF hFE 120 Cob MHz 30 pF VCE=-5V, IC=-0.1A VCB=-10V, IE=0, f=1MHz Rank O Y Range 80-160 120-240 Marking DO DY © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 1/4 KTA1661 BIPOLAR TRANSISTOR (PNP) Typical Characteristics h FE - I C I C - V CE 1k COMMON EMITTER COMMON EMITTER Ta=25 C -5mA DC CURRENT GAIN h FE -10m A -7 m A COLLECTOR CURRENT I C (mA) -800 -600 -4mA -3mA -400 -2mA I B=-1mA -200 VCE =-5V 500 300 Ta=100 C Ta=25 C 100 Ta=-25 C 50 30 0mA 10 0 -12 -16 -3 -20 -10 COLLECTOR-EMITTER VOLTAGE V CE (V) -30 -0.1 C =1 Ta Ta=25 C Ta=-25 C -0.02 -3 -10 -30 -100 -300 COMMON EMITTER VCE =-5V -0.8 -0.6 -0.4 -0.2 0 -1k 0 DC m s OP ER AT -100 s 0m IO N -30 -10 -3 SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE V CE (V) © SHENZHEN HOTTECH ELECTRONICS CO.,LTD COLLECTOR POWER DISSIPATION PC (W) COLLECTOR CURRENT I C (mA) -300 10 10 -0.8 -1.0 -1.2 Pc - Ta s 1m -1k -0.6 BASE-EMITTER VOLTAGE V BE (V) SAFE OPERATING AREA I C MAX(PULSE) I C MAX (CONTINUOUS) -0.4 -0.2 COLLECTOR CURRENT I C (mA) -3k Ta=-25 C I C /I B =10 -1.0 Ta=100 C COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COMMON EMITTER 00 -1k I C - V BE -0.5 -0.05 -300 COLLECTOR CURRENT I C (mA) VCE(sat) - I C -0.3 -100 Ta=25 C -8 -4 0 1.2 1 MOUNTED ON CERAMIC SUBSTRATE(250mm 2 x0.8t) 2 Ta=25 C 1 1.0 0.8 0.6 2 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) E-mail:hkt@heketai.com 2/4 KTA1661 BIPOLAR TRANSISTOR (PNP) SOT-89 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.550REF 0.061REF E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e 1.500TYP 0.060TYP e1 3.000TYP 0.118TYP L 0.900 1.200 0.035 0.047 SOT-89 Suggested Pad Layout Note: 1.Controlling dimension: in millimeters 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 3/4 KTA1661 BIPOLAR TRANSISTOR (PNP) SOT-89 Tape and Reel SOT-89 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-89 4.85 4.45 1.85 Ø1.50 1.75 5.50 4.00 8.00 2.00 12.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-89 Tape Leader and Trailer SOT-89 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø178 54.40 13.00 R78 R25.60 R6.50 13.20 16.50 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 4/4