BCX56-16 BL HD

Plastic-Encapsulate Transistors BCX54/BCX55/BCX56 FEATURES (NPN) z For AF driver and output stages z High collector current z Low collector-emitter saturation voltage z Complementary types:BCX51…BCX53(PNP) ORDERING INFORMATION Type No. Marking BCX54 BCX54-10 BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56 BCX56-10 BCX56-16 BA BC BD BE BG BM BH BK BL MAXIMUM RATING Symbol Package Code 1. BASE SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 2. COLLECTO 3. EMITTER @ Ta=25℃ unless otherwise specified Parameter Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Value Unit BCX54 BCX55 BCX56 45 60 100 V BCX54 BCX55 BCX56 45 60 80 V VEBO Emitter-Base Voltage 5 V IC DC Collector Current 1 A ICM Peak Collector Current 1.5 A IB Base current 100 mA IBM Peak base current 200 mA Ptot Total power dissipation,TS=130℃ 1 W Tj,Tstg Junction and Storage Temperature -65 to+150 ℃ GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4 -P1 Plastic-Encapsulate Transistors BCX54/BCX55/BCX56 TRANSISTOR (NPN) ELECTRICAL CHARACTERISTICS Parameter Symbol @ Ta=25℃ unless otherwise specified Test conditions IC=100μA IB=0 Collector-base breakdown voltage V(BR)CBO IC=10mA IB=0 MIN MAX UNIT BCX54 BCX55 BCX56 45 60 100 V BCX54 BCX55 BCX56 45 60 80 V Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current ICBO DC current gain hFE VCE=2V IC=5mA VCE=2V IC=150mA VCE=2V IC=500mA Collector-emitter saturation voltage VCE(sat) IC=500mA IB=50mA 0.5 V Base-emitter voltage VBE IC=500mA ,VCE=2V 1 V Transition frequency fT VCE=10V, IC=50mA, f=20MHz Typical Characteristics GUANGDONG HOTTECH IE=100 μA IC =0 5 V VCB=30V IE=0 100 nA VCB=30V IE=0,TA=150℃ 20 μA 40 63 25 250 100 MHz BCX54/BCX55/BCX56 INDUSTRIAL CO., LTD Page:P4 -P2 Plastic-Encapsulate Transistors Typical Characteristics GUANGDONG HOTTECH BCX54/BCX55/BCX56 INDUSTRIAL CO., LTD Page:P4 -P3 Plastic-Encapsulate Transistors Typical Characteristics GUANGDONG HOTTECH BCX54/BCX55/BCX56 INDUSTRIAL CO., LTD Page:P4 -P4